Infineon Technologies IPB108N15N3 G

Name: IPB108N15N3 G
Brand: Infineon Technologies
SKU: 2479981-IPB108N15N3 G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IPB108N15N3 G

Manufacturer:: Infineon Technologies

Ventron No:: 2479981-IPB108N15N3 G

Description:: MOSFET N-CH 150V 83A TO263-3

ECAD Model:

Datasheet:: IPB108N15N3 G

Specifications

Infineon Technologies IPB108N15N3 G technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPB108N15N3 G.

Package / Case
PG-TO263-3
Packaging
Tape & Reel (TR)
RoHS Status
RoHS Compliant

Description

IPB108N15N3 G Overview
This product is manufactured by Infineon Technologies and belongs to the category of Transistors - FETs, MOSFETs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IPB108N15N3 G or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IPB108N15N3 G. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

Product Comparison

The three parts on the right have similar specifications to IPB108N15N3 G.

Image

Part Number

Manufacturer

Package / Case

Packaging

RoHS Status

Mount

Mounting Type

Transistor Element Material

Published

Series

Operating Temperature

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

Subcategory

Voltage - Rated DC

Technology

Terminal Form

Peak Reflow Temperature (Cel)

Current Rating

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain-source On Resistance-Max

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Avalanche Energy Rating (Eas)

Lead Free

Supplier Device Package

Drain to Source Voltage (Vdss)

View Compare
IPB108N15N3 G

Infineon Technologies

PG-TO263-3

Tape & Reel (TR)

RoHS Compliant

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IPB100N06S3-03

Infineon Technologies

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

Tape & Reel (TR)

RoHS Compliant

Surface Mount

Surface Mount

SILICON

2007

OptiMOS™

-55°C~175°C TJ

e3

Obsolete

1 (Unlimited)

2

EAR99

MATTE TIN

AVALANCHE RATED

FET General Purpose Power

55V

MOSFET (Metal Oxide)

GULL WING

260

100A

40

4

R-PSSO-G2

Not Qualified

1

300W Tc

Single

ENHANCEMENT MODE

300W

DRAIN

N-Channel

3m Ω @ 80A, 10V

4V @ 230μA

21620pF @ 25V

100A Tc

480nC @ 10V

67ns

10V

±20V

60 ns

77 ns

100A

20V

0.003Ohm

55V

400A

2390 mJ

Lead Free

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IPB108N15N3 G vs IPB100N06S3-03
IPB100N10S3-05

Infineon Technologies

PG-TO263-3

Tape & Reel (TR)

RoHS Compliant

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IPB108N15N3 G vs IPB100N10S3-05
IPB180N06S4H1ATMA1

Infineon Technologies

TO-263-7, D2Pak (6 Leads Tab)

Tape & Reel (TR)

ROHS3 Compliant

-

Surface Mount

-

-

OptiMOS™

-55°C~175°C TJ

-

Obsolete

1 (Unlimited)

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MOSFET (Metal Oxide)

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250W Tc

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N-Channel

1.7mOhm @ 100A, 10V

4V @ 200μA

21.9pF @ 25V

180A Tc

270nC @ 10V

-

10V

±20V

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PG-TO263-7-3

60V

IPB108N15N3 G vs IPB180N06S4H1ATMA1

Certification

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Infineon Technologies

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IPB100N10S305ATMA1

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IPB100N06S3-04

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IPB100N06S3-03

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IPB100N08S207ATMA1

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MOSFET N-CH 75V 100A TO263-3
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MOSFET N-CH 100V 100A TO263-3
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IPB108N15N3 G Specification

Part Number	Manufacturers	Description	Stock	Price
IPB108N15N3GATMA1 DISTI #V72:2272_06378661	Infineon Technologies AG	Trans MOSFET N-CH 150V 83A Automotive 3-Pin(2 Tab) RoHS: Compliant	0
IPB108N15N3GATMA1 DISTI #V36:1790_06378661	Infineon Technologies AG	Trans MOSFET N-CH 150V 83A Automotive 3-Pin(2 Tab) RoHS: Compliant	0	1000 $2.711 10000 $2.659 100000 $2.342 500000 $2.151 1000000 $2.148
IPB108N15N3GATMA1 DISTI #IPB108N15N3GATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 150V 83A TO263-3 RoHS: Compliant	7116	1 $4.4 10 $3.955 100 $3.2408 500 $2.75882
IPB108N15N3GATMA1 DISTI #IPB108N15N3GATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 150V 83A TO263-3 RoHS: Compliant	7116	1 $4.4 10 $3.955 100 $3.2408 500 $2.75882
IPB108N15N3GATMA1 DISTI #IPB108N15N3GATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 150V 83A TO263-3 RoHS: Compliant	7000	1000 $2.25895 2000 $2.146
IPB108N15N3 G DISTI #IPB108N15N3 G	Infineon Technologies AG	Trans MOSFET N-CH 150V 83A 3-Pin TO-263 T/R (Alt: RoHS: Compliant	0
IPB108N15N3 G DISTI #IPB108N15N3G	Infineon Technologies AG	Trans MOSFET N-CH 150V 83A 3-Pin TO-263 T/R - Bulk RoHS: Compliant	0	178 $2.19 356 $2.09 534 $1.99 890 $1.89 1780 $1.89
IPB108N15N3 G DISTI #SP000677862	Infineon Technologies AG	Trans MOSFET N-CH 150V 83A 3-Pin TO-263 T/R (Alt: RoHS: Compliant	0	1000 $1.99 2000 $1.99 4000 $1.89 6000 $1.69 10000 $1.59
IPB108N15N3GXT DISTI #IPB108N15N3GATMA1	Infineon Technologies AG	Trans MOSFET N-CH 150V 83A 3-Pin(2 Tab) TO-263 - T RoHS: Compliant	0	1000 $2.19 2000 $2.09 4000 $1.99 6000 $1.89 10000 $1.89
IPB108N15N3GATMA1 DISTI #85X6017	Infineon Technologies AG	MOSFET Transistor, N Channel, 83 A, 150 V, 0.0091	862	1 $4.1 10 $3.48 25 $3.33 50 $3.17 100 $3.02 250 $2.87 500 $2.58
IPB108N15N3 G DISTI #726-IP726-B108N15N3G	Infineon Technologies AG	MOSFET N-Ch 150V 83A D2PAK-2 OptiMOS 3 RoHS: Compliant	1489	1 $4.06 10 $3.45 100 $2.99 250 $2.84 500 $2.55 1000 $2.15 2000 $2.04
IPB108N15N3G DISTI #	Infineon Technologies AG	Power Field-Effect Transistor, 83A I(D), 150V, 0.0 RoHS: Compliant	511	1 $2.49 25 $2.32 100 $2.22 500 $2.13 1000 $2.03
IPB108N15N3GATMA1 DISTI #	Infineon Technologies AG	Power Field-Effect Transistor, 83A I(D), 150V, 0.0 RoHS: Compliant	625	1 $2.24 25 $2.08 100 $1.99 500 $1.91 1000 $1.82
IPB108N15N3GATMA1 DISTI #2443383	Infineon Technologies AG	MOSFET, N CH, 150V, 83A, TO-263-3	892	1 $3.5 10 $2.66 100 $2.3 250 $2.19 500 $1.97
IPB108N15N3GATMA1 DISTI #2443383	Infineon Technologies AG	MOSFET, N CH, 150V, 83A, TO-263-3 RoHS: Compliant	862	1 $6.12 10 $5.2 100 $4.51 250 $4.28 500 $3.84 1000 $3.24
IPB108N15N3GATMA1 DISTI #2443383RL	Infineon Technologies AG	MOSFET, N CH, 150V, 83A, TO-263-3 RoHS: Compliant	0	1 $6.12 10 $5.2 100 $4.51 250 $4.28 500 $3.84 1000 $3.24
IPB108N15N3G DISTI #	Infineon Technologies AG	150V,83A,N Channel Power MOSFET	30	1 $3.27 100 $2.72 500 $2.4 1000 $2.34

IPB108N~~(3)~~
IPB108~~(3)~~
IPB10~~(42)~~
IPB1~~(71)~~
IPB~~(73)~~

Infineon Technologies IPB108N15N3 G

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