FDS6680S

Fairchild/ON Semiconductor FDS6680S

Part Number:
FDS6680S
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2490775-FDS6680S
Description:
MOSFET N-CH 30V 11.5A 8-SOIC
ECAD Model:
Datasheet:
FDS6680

Quick Request Quote

Please send RFQ , We will respond immediately.

Part Number
Quantity
Company
E-mail
Phone
Comments
Specifications
Fairchild/ON Semiconductor FDS6680S technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDS6680S.
  • Mounting Type
    Surface Mount
  • Package / Case
    8-SOIC (0.154, 3.90mm Width)
  • Supplier Device Package
    8-SOIC
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    PowerTrench®
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Technology
    MOSFET (Metal Oxide)
  • Power Dissipation-Max
    2.5W Ta
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    11mOhm @ 11.5A, 10V
  • Vgs(th) (Max) @ Id
    3V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    2.01pF @ 15V
  • Current - Continuous Drain (Id) @ 25°C
    11.5A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    24nC @ 5V
  • Drain to Source Voltage (Vdss)
    30V
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • RoHS Status
    ROHS3 Compliant
Description
FDS6680S Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 2.01pF @ 15V.Operating this transistor requires a 30V drain to source voltage (Vdss).By using drive voltage (4.5V 10V), this device helps reduce its overall power consumption.

FDS6680S Features
a 30V drain to source voltage (Vdss)


FDS6680S Applications
There are a lot of Rochester Electronics, LLC
FDS6680S applications of single MOSFETs transistors.


LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
FDS6680S More Descriptions
Trans MOSFET N-CH 30V 11.5A 8-Pin SOIC N T/R
Small Signal Field-Effect Transistor
French Electronic Distributor since 1988
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:11.5A; On Resistance, Rds(on):0.017ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:8-SOIC ;RoHS Compliant: Yes
Product Comparison
The three parts on the right have similar specifications to FDS6680S.
  • Image
    Part Number
    Manufacturer
    Mounting Type
    Package / Case
    Supplier Device Package
    Operating Temperature
    Packaging
    Series
    Part Status
    Moisture Sensitivity Level (MSL)
    Technology
    Power Dissipation-Max
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    RoHS Status
    Surface Mount
    Transistor Element Material
    JESD-609 Code
    Pbfree Code
    Number of Terminations
    Terminal Finish
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    JESD-30 Code
    Qualification Status
    Number of Elements
    Configuration
    Operating Mode
    Transistor Application
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    DS Breakdown Voltage-Min
    Lifecycle Status
    Factory Lead Time
    Mount
    Number of Pins
    Weight
    Published
    ECCN Code
    Resistance
    Subcategory
    Voltage - Rated DC
    Current Rating
    Element Configuration
    Power Dissipation
    Turn On Delay Time
    Rise Time
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    Lead Free
    Contact Plating
    View Compare
  • FDS6680S
    FDS6680S
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8-SOIC
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    Obsolete
    1 (Unlimited)
    MOSFET (Metal Oxide)
    2.5W Ta
    N-Channel
    11mOhm @ 11.5A, 10V
    3V @ 250μA
    2.01pF @ 15V
    11.5A Ta
    24nC @ 5V
    30V
    4.5V 10V
    ±20V
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • FDS6688S
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    -
    -55°C~175°C TJ
    Tape & Reel (TR)
    PowerTrench®
    Obsolete
    1 (Unlimited)
    MOSFET (Metal Oxide)
    2.5W Ta
    N-Channel
    6m Ω @ 16A, 10V
    3V @ 1mA
    3.29pF @ 15V
    16A Ta
    78nC @ 10V
    30V
    4.5V 10V
    ±20V
    ROHS3 Compliant
    YES
    SILICON
    e3
    yes
    8
    MATTE TIN
    DUAL
    GULL WING
    260
    NOT SPECIFIED
    8
    R-PDSO-G8
    COMMERCIAL
    1
    SINGLE WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    SWITCHING
    16A
    0.006Ohm
    30V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • FDS6690AS
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®, SyncFET™
    Active
    1 (Unlimited)
    MOSFET (Metal Oxide)
    2.5W Ta
    N-Channel
    12m Ω @ 10A, 10V
    3V @ 1mA
    910pF @ 15V
    10A Ta
    23nC @ 10V
    -
    4.5V 10V
    ±20V
    ROHS3 Compliant
    -
    SILICON
    e4
    yes
    8
    Nickel/Palladium/Gold (Ni/Pd/Au)
    DUAL
    GULL WING
    -
    -
    -
    -
    -
    1
    -
    ENHANCEMENT MODE
    SWITCHING
    -
    -
    -
    ACTIVE (Last Updated: 1 day ago)
    18 Weeks
    Surface Mount
    8
    130mg
    2004
    EAR99
    12MOhm
    FET General Purpose Power
    30V
    10A
    Single
    2.5W
    8 ns
    5ns
    6 ns
    25 ns
    10A
    1.6V
    20V
    30V
    1.6 V
    1.5mm
    5mm
    4mm
    No SVHC
    No
    Lead Free
    -
  • FDS6670AS
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®, SyncFET™
    Active
    1 (Unlimited)
    MOSFET (Metal Oxide)
    2.5W Ta
    N-Channel
    9m Ω @ 13.5A, 10V
    3V @ 1mA
    1540pF @ 15V
    13.5A Ta
    38nC @ 10V
    -
    4.5V 10V
    ±20V
    ROHS3 Compliant
    -
    SILICON
    e4
    yes
    8
    Nickel/Palladium/Gold (Ni/Pd/Au)
    DUAL
    GULL WING
    -
    -
    -
    -
    -
    1
    -
    ENHANCEMENT MODE
    SWITCHING
    -
    -
    -
    ACTIVE (Last Updated: 1 day ago)
    18 Weeks
    Surface Mount
    8
    130mg
    2005
    EAR99
    9MOhm
    -
    30V
    13.5A
    Single
    2.5W
    10 ns
    5ns
    18 ns
    27 ns
    13.5A
    -
    20V
    30V
    -
    1.5mm
    5mm
    4mm
    -
    No
    Lead Free
    Tin
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

Latest News

  • cost

    Help you to save your cost and time.

  • package

    Reliable package for your goods.

  • fast

    Fast Reliable Delivery to save time.

  • service

    Quality premium after-sale service.