Fairchild/ON Semiconductor FDS6375

Name: FDS6375
Brand: Fairchild/ON Semiconductor
SKU: 3554111-FDS6375
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FDS6375

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 3554111-FDS6375

Description:: MOSFET P-CH 20V 8A 8-SOIC

ECAD Model:

Datasheet:: FDS6375

Specifications

Fairchild/ON Semiconductor FDS6375 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDS6375.

Lifecycle Status
ACTIVE (Last Updated: 1 day ago)
Factory Lead Time
18 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Number of Pins
8
Weight
130mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Series
PowerTrench®
Published
2001
JESD-609 Code
e4
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
8
ECCN Code
EAR99
Resistance
24MOhm
Terminal Finish
Nickel/Palladium/Gold (Ni/Pd/Au)
Subcategory
Other Transistors
Voltage - Rated DC
-20V
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Current Rating
-8A
Number of Elements
1
Power Dissipation-Max
2.5W Ta
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
2.5W
Turn On Delay Time
12 ns
FET Type
P-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
24m Ω @ 8A, 4.5V
Vgs(th) (Max) @ Id
1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
2694pF @ 10V
Current - Continuous Drain (Id) @ 25°C
8A Ta
Gate Charge (Qg) (Max) @ Vgs
36nC @ 4.5V
Rise Time
9ns
Drain to Source Voltage (Vdss)
20V
Drive Voltage (Max Rds On,Min Rds On)
2.5V 4.5V
Vgs (Max)
±8V
Fall Time (Typ)
57 ns
Turn-Off Delay Time
124 ns
Continuous Drain Current (ID)
8A
Threshold Voltage
-700mV
Gate to Source Voltage (Vgs)
8V
Drain Current-Max (Abs) (ID)
8A
Drain to Source Breakdown Voltage
-20V
Dual Supply Voltage
-20V
Nominal Vgs
-700 mV
Height
1.5mm
Length
5mm
Width
4mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

FDS6375 Description This P-channel 2.5V MOSFET FDS6375 is a rugged gate version of advanced PowerTritch technology. It has been optimized for power management applications with a wide range of gate drive voltages (2.5V-8V).
FDS6375 Features -8.0 A, -20 V RDS(on) = 24 mΩ @ VGS = -4.5 V RDS(on) = 32 mΩ @ VGS = -2.5 V Low gate charge (26nC typical) Fast switching speed High performance trench technology for extremely low RDS(ON) High power and current handling capability
FDS6375 Applications
This product is general usage and suitable for many different applications. Power Management Load Switch Battery Protection

FDS6375 More Descriptions

P-Channel 20 V 24 mOhm 2.5V Specified PowerTrench Mosfet SOIC-8
Transistor: P-MOSFET; unipolar; 20V; 8A; 2.5W; SO8; PowerTrench®
P-Channel PowerTrench® MOSFFET, 2.5V Specified, -20V, -8A, 24mΩ
This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor's advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 8V)
MOSFET, P, SO-8; Transistor Polarity:P Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:20V; On Resistance Rds(on):24mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-700mV; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:8A; Current Temperature:25°C; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:SOIC; Power Dissipation Pd:2.5W; Power Dissipation Pd:2.5W; Pulse Current Idm:50A; SMD Marking:FDS6375; Termination Type:SMD; Voltage Vds:20V; Voltage Vds Typ:-20V; Voltage Vgs Max:-700mV; Voltage Vgs Rds on Measurement:-4.5V; Voltage Vgs th Max:-1.5V

Product Comparison

The three parts on the right have similar specifications to FDS6375.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Terminal Finish

Subcategory

Voltage - Rated DC

Technology

Terminal Position

Terminal Form

Current Rating

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain Current-Max (Abs) (ID)

Drain to Source Breakdown Voltage

Dual Supply Voltage

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Surface Mount

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Configuration

Drain-source On Resistance-Max

DS Breakdown Voltage-Min

Case Connection

Pulsed Drain Current-Max (IDM)

View Compare
FDS6375

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 1 day ago)

18 Weeks

Tin

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

130mg

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

PowerTrench®

2001

e4

yes

Active

1 (Unlimited)

8

EAR99

24MOhm

Nickel/Palladium/Gold (Ni/Pd/Au)

Other Transistors

-20V

MOSFET (Metal Oxide)

DUAL

GULL WING

-8A

1

2.5W Ta

Single

ENHANCEMENT MODE

2.5W

12 ns

P-Channel

SWITCHING

24m Ω @ 8A, 4.5V

1.5V @ 250μA

2694pF @ 10V

8A Ta

36nC @ 4.5V

9ns

20V

2.5V 4.5V

±8V

57 ns

124 ns

8A

-700mV

8V

8A

-20V

-20V

-700 mV

1.5mm

5mm

4mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-
FDS6688

Fairchild/ON Semiconductor

-

-

-

-

Surface Mount

8-SOIC (0.154, 3.90mm Width)

-

-

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

PowerTrench®

-

e3

yes

Obsolete

1 (Unlimited)

8

-

-

MATTE TIN

-

-

MOSFET (Metal Oxide)

DUAL

GULL WING

-

1

2.5W Ta

-

ENHANCEMENT MODE

-

-

N-Channel

SWITCHING

6m Ω @ 16A, 10V

3V @ 250μA

3.888pF @ 15V

16A Ta

56nC @ 5V

-

30V

4.5V 10V

±20V

-

-

-

-

-

16A

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

YES

260

unknown

NOT SPECIFIED

8

R-PDSO-G8

COMMERCIAL

SINGLE WITH BUILT-IN DIODE

0.006Ohm

30V

-

-

FDS6375 vs FDS6688
FDS6064N7

Fairchild/ON Semiconductor

-

-

-

-

Surface Mount

8-SOIC (0.154, 3.90mm Width)

-

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®

-

e4

yes

Obsolete

1 (Unlimited)

8

-

-

NICKEL PALLADIUM GOLD

-

-

MOSFET (Metal Oxide)

DUAL

GULL WING

-

1

3W Ta

-

ENHANCEMENT MODE

-

-

N-Channel

SWITCHING

3.5m Ω @ 23A, 4.5V

1.5V @ 250μA

7.191pF @ 10V

23A Ta

98nC @ 4.5V

-

20V

1.8V 4.5V

±8V

-

-

-

-

-

23A

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

YES

260

-

NOT SPECIFIED

8

R-PDSO-G8

COMMERCIAL

SINGLE WITH BUILT-IN DIODE

0.0035Ohm

20V

DRAIN

60A

FDS6375 vs FDS6064N7
FDS6690AS

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 1 day ago)

18 Weeks

-

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

130mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®, SyncFET™

2004

e4

yes

Active

1 (Unlimited)

8

EAR99

12MOhm

Nickel/Palladium/Gold (Ni/Pd/Au)

FET General Purpose Power

30V

MOSFET (Metal Oxide)

DUAL

GULL WING

10A

1

2.5W Ta

Single

ENHANCEMENT MODE

2.5W

8 ns

N-Channel

SWITCHING

12m Ω @ 10A, 10V

3V @ 1mA

910pF @ 15V

10A Ta

23nC @ 10V

5ns

-

4.5V 10V

±20V

6 ns

25 ns

10A

1.6V

20V

-

30V

-

1.6 V

1.5mm

5mm

4mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

FDS6375 vs FDS6690AS