Fairchild/ON Semiconductor FDS6670AS

Name: FDS6670AS
Brand: Fairchild/ON Semiconductor
SKU: 2848804-FDS6670AS
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FDS6670AS

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2848804-FDS6670AS

Description:: MOSFET N-CH 30V 13.5A 8SOIC

ECAD Model:

Datasheet:: FDS6670AS

Specifications

Fairchild/ON Semiconductor FDS6670AS technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDS6670AS.

Lifecycle Status
ACTIVE (Last Updated: 1 day ago)
Factory Lead Time
18 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Number of Pins
8
Weight
130mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
PowerTrench®, SyncFET™
Published
2005
JESD-609 Code
e4
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
8
ECCN Code
EAR99
Resistance
9MOhm
Terminal Finish
Nickel/Palladium/Gold (Ni/Pd/Au)
Voltage - Rated DC
30V
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Current Rating
13.5A
Number of Elements
1
Power Dissipation-Max
2.5W Ta
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
2.5W
Turn On Delay Time
10 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
9m Ω @ 13.5A, 10V
Vgs(th) (Max) @ Id
3V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds
1540pF @ 15V
Current - Continuous Drain (Id) @ 25°C
13.5A Ta
Gate Charge (Qg) (Max) @ Vgs
38nC @ 10V
Rise Time
5ns
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
18 ns
Turn-Off Delay Time
27 ns
Continuous Drain Current (ID)
13.5A
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
30V
Height
1.5mm
Length
5mm
Width
4mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

FDS6670AS Description
The FDS6670AS from ON Semiconductor is intended to replace a single SO-8 MOSFET and Schottky diode in a synchronous DC: DC power supply. This 30V MOSFET is intended to maximize power conversion efficiency by having a low RDS(ON) and gate charge. Using ON Semiconductor's monolithic SyncFET technology, the FDS6670AS has an inbuilt Schottky diode.

FDS6670AS Features
Includes SyncFET Schottky body diode
Low gate charge (27nC typical)
High-performance trench technology for extremely low RDS(ON) and fast switching
High power and current handling capability
13.5A, 30V
RDS(on) = 9.0mΩ @ VGS = 10V
RDS(on) = 11.5mΩ @ VGS = 4.5V
RoHS Compliant

FDS6670AS Applications
DC/DC Converters Low Side Notebook

FDS6670AS More Descriptions

N-Channel 30 V 9 mOhm Surface Mount PowerTrench Mosfet - SOIC-8
Trans MOSFET N-CH 30V 13.5A 8-Pin SOIC N T/R - Tape and Reel
N-Channel PowerTrench® SyncFET™, 30V, 13.5A, 9.0mΩ
MOSFET, N-CH, 30V, 13.5A, SOIC-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 13.5A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0075ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.7V;
The FDS6670AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6670AS includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology.

Product Comparison

The three parts on the right have similar specifications to FDS6670AS.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Terminal Finish

Voltage - Rated DC

Technology

Terminal Position

Terminal Form

Current Rating

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Height

Length

Width

Radiation Hardening

RoHS Status

Lead Free

Subcategory

Drain to Source Voltage (Vdss)

Threshold Voltage

Drain Current-Max (Abs) (ID)

Dual Supply Voltage

Nominal Vgs

REACH SVHC

Surface Mount

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Configuration

Drain-source On Resistance-Max

DS Breakdown Voltage-Min

Case Connection

Pulsed Drain Current-Max (IDM)

View Compare
FDS6670AS

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 1 day ago)

18 Weeks

Tin

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

130mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®, SyncFET™

2005

e4

yes

Active

1 (Unlimited)

8

EAR99

9MOhm

Nickel/Palladium/Gold (Ni/Pd/Au)

30V

MOSFET (Metal Oxide)

DUAL

GULL WING

13.5A

1

2.5W Ta

Single

ENHANCEMENT MODE

2.5W

10 ns

N-Channel

SWITCHING

9m Ω @ 13.5A, 10V

3V @ 1mA

1540pF @ 15V

13.5A Ta

38nC @ 10V

5ns

4.5V 10V

±20V

18 ns

27 ns

13.5A

20V

30V

1.5mm

5mm

4mm

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
FDS6375

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 1 day ago)

18 Weeks

Tin

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

130mg

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

PowerTrench®

2001

e4

yes

Active

1 (Unlimited)

8

EAR99

24MOhm

Nickel/Palladium/Gold (Ni/Pd/Au)

-20V

MOSFET (Metal Oxide)

DUAL

GULL WING

-8A

1

2.5W Ta

Single

ENHANCEMENT MODE

2.5W

12 ns

P-Channel

SWITCHING

24m Ω @ 8A, 4.5V

1.5V @ 250μA

2694pF @ 10V

8A Ta

36nC @ 4.5V

9ns

2.5V 4.5V

±8V

57 ns

124 ns

8A

8V

-20V

1.5mm

5mm

4mm

No

ROHS3 Compliant

Lead Free

Other Transistors

20V

-700mV

8A

-20V

-700 mV

No SVHC

-

-

-

-

-

-

-

-

-

-

-

FDS6670AS vs FDS6375
FDS6688S

Fairchild/ON Semiconductor

-

-

-

-

Surface Mount

8-SOIC (0.154, 3.90mm Width)

-

-

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

PowerTrench®

-

e3

yes

Obsolete

1 (Unlimited)

8

-

-

MATTE TIN

-

MOSFET (Metal Oxide)

DUAL

GULL WING

-

1

2.5W Ta

-

ENHANCEMENT MODE

-

-

N-Channel

SWITCHING

6m Ω @ 16A, 10V

3V @ 1mA

3.29pF @ 15V

16A Ta

78nC @ 10V

-

4.5V 10V

±20V

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

-

30V

-

16A

-

-

-

YES

260

NOT SPECIFIED

8

R-PDSO-G8

COMMERCIAL

SINGLE WITH BUILT-IN DIODE

0.006Ohm

30V

-

-

FDS6670AS vs FDS6688S
FDS6064N7

Fairchild/ON Semiconductor

-

-

-

-

Surface Mount

8-SOIC (0.154, 3.90mm Width)

-

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®

-

e4

yes

Obsolete

1 (Unlimited)

8

-

-

NICKEL PALLADIUM GOLD

-

MOSFET (Metal Oxide)

DUAL

GULL WING

-

1

3W Ta

-

ENHANCEMENT MODE

-

-

N-Channel

SWITCHING

3.5m Ω @ 23A, 4.5V

1.5V @ 250μA

7.191pF @ 10V

23A Ta

98nC @ 4.5V

-

1.8V 4.5V

±8V

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

-

20V

-

23A

-

-

-

YES

260

NOT SPECIFIED

8

R-PDSO-G8

COMMERCIAL

SINGLE WITH BUILT-IN DIODE

0.0035Ohm

20V

DRAIN

60A

FDS6670AS vs FDS6064N7