Fairchild/ON Semiconductor FDS6688S

Name: FDS6688S
Brand: Fairchild/ON Semiconductor
SKU: 2851613-FDS6688S
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FDS6688S

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2851613-FDS6688S

Description:: MOSFET N-CH 30V 16A 8SOIC

ECAD Model:

Datasheet:: FDS6688S

Specifications

Fairchild/ON Semiconductor FDS6688S technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDS6688S.

Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Series
PowerTrench®
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
8
Terminal Finish
MATTE TIN
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
8
JESD-30 Code
R-PDSO-G8
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
2.5W Ta
Operating Mode
ENHANCEMENT MODE
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
6m Ω @ 16A, 10V
Vgs(th) (Max) @ Id
3V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds
3.29pF @ 15V
Current - Continuous Drain (Id) @ 25°C
16A Ta
Gate Charge (Qg) (Max) @ Vgs
78nC @ 10V
Drain to Source Voltage (Vdss)
30V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Drain Current-Max (Abs) (ID)
16A
Drain-source On Resistance-Max
0.006Ohm
DS Breakdown Voltage-Min
30V
RoHS Status
ROHS3 Compliant

Description

FDS6688S Overview
A device's maximal input capacitance is 3.29pF @ 15V, which is defined as the capacitance between its input terminals with either input grounded.In this device, the drain current is 16A, which is the maximum continuous current the device can conduct.To maintain normal operation, it is recommended that the DS breakdown voltage be above 30V.This transistor requires a 30V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (4.5V 10V).

FDS6688S Features
a 30V drain to source voltage (Vdss)

FDS6688S Applications
There are a lot of Rochester Electronics, LLC
FDS6688S applications of single MOSFETs transistors.

Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples

FDS6688S More Descriptions

TRANS MOSFET N-CH 30V 16A 8SOIC
MOSFETs 30V N-Channel PT SyncFET
MISCELLANEOUS MOSFETS;

Product Comparison

The three parts on the right have similar specifications to FDS6688S.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Surface Mount

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Terminal Finish

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

DS Breakdown Voltage-Min

RoHS Status

Reach Compliance Code

Case Connection

Pulsed Drain Current-Max (IDM)

Lifecycle Status

Factory Lead Time

Mount

Number of Pins

Weight

Published

ECCN Code

Resistance

Subcategory

Voltage - Rated DC

Current Rating

Element Configuration

Power Dissipation

Turn On Delay Time

Rise Time

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

Lead Free

View Compare
FDS6688S

Fairchild/ON Semiconductor

Surface Mount

8-SOIC (0.154, 3.90mm Width)

YES

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

PowerTrench®

e3

yes

Obsolete

1 (Unlimited)

8

MATTE TIN

MOSFET (Metal Oxide)

DUAL

GULL WING

260

NOT SPECIFIED

8

R-PDSO-G8

COMMERCIAL

1

SINGLE WITH BUILT-IN DIODE

2.5W Ta

ENHANCEMENT MODE

N-Channel

SWITCHING

6m Ω @ 16A, 10V

3V @ 1mA

3.29pF @ 15V

16A Ta

78nC @ 10V

30V

4.5V 10V

±20V

16A

0.006Ohm

30V

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
FDS6688

Fairchild/ON Semiconductor

Surface Mount

8-SOIC (0.154, 3.90mm Width)

YES

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

PowerTrench®

e3

yes

Obsolete

1 (Unlimited)

8

MATTE TIN

MOSFET (Metal Oxide)

DUAL

GULL WING

260

NOT SPECIFIED

8

R-PDSO-G8

COMMERCIAL

1

SINGLE WITH BUILT-IN DIODE

2.5W Ta

ENHANCEMENT MODE

N-Channel

SWITCHING

6m Ω @ 16A, 10V

3V @ 250μA

3.888pF @ 15V

16A Ta

56nC @ 5V

30V

4.5V 10V

±20V

16A

0.006Ohm

30V

ROHS3 Compliant

unknown

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

FDS6688S vs FDS6688
FDS6162N7

Fairchild/ON Semiconductor

Surface Mount

8-SOIC (0.154, 3.90mm Width)

YES

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®

e4

yes

Obsolete

1 (Unlimited)

8

NICKEL PALLADIUM GOLD

MOSFET (Metal Oxide)

DUAL

GULL WING

260

NOT SPECIFIED

8

R-PDSO-G8

COMMERCIAL

1

SINGLE WITH BUILT-IN DIODE

3W Ta

ENHANCEMENT MODE

N-Channel

SWITCHING

3.5m Ω @ 23A, 4.5V

1.5V @ 250μA

5.521pF @ 10V

23A Ta

73nC @ 4.5V

20V

2.5V 4.5V

±12V

23A

0.0035Ohm

20V

ROHS3 Compliant

-

DRAIN

60A

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

FDS6688S vs FDS6162N7
FDS6690AS

Fairchild/ON Semiconductor

Surface Mount

8-SOIC (0.154, 3.90mm Width)

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®, SyncFET™

e4

yes

Active

1 (Unlimited)

8

Nickel/Palladium/Gold (Ni/Pd/Au)

MOSFET (Metal Oxide)

DUAL

GULL WING

-

-

-

-

-

1

-

2.5W Ta

ENHANCEMENT MODE

N-Channel

SWITCHING

12m Ω @ 10A, 10V

3V @ 1mA

910pF @ 15V

10A Ta

23nC @ 10V

-

4.5V 10V

±20V

-

-

-

ROHS3 Compliant

-

-

-

ACTIVE (Last Updated: 1 day ago)

18 Weeks

Surface Mount

8

130mg

2004

EAR99

12MOhm

FET General Purpose Power

30V

10A

Single

2.5W

8 ns

5ns

6 ns

25 ns

10A

1.6V

20V

30V

1.6 V

1.5mm

5mm

4mm

No SVHC

No

Lead Free

FDS6688S vs FDS6690AS