Fairchild/ON Semiconductor FDS6064N3

Name: FDS6064N3
Brand: Fairchild/ON Semiconductor
SKU: 3071049-FDS6064N3
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FDS6064N3

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 3071049-FDS6064N3

Description:: MOSFET N-CH 20V 23A 8-SOIC

ECAD Model:

Datasheet:: FDS6064N3

Specifications

Fairchild/ON Semiconductor FDS6064N3 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDS6064N3.

Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
PowerTrench®
JESD-609 Code
e4
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
8
Terminal Finish
NICKEL PALLADIUM GOLD
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Reach Compliance Code
unknown
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
8
JESD-30 Code
R-PDSO-G8
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
3W Ta
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
4m Ω @ 23A, 4.5V
Vgs(th) (Max) @ Id
1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
7.191pF @ 10V
Current - Continuous Drain (Id) @ 25°C
23A Ta
Gate Charge (Qg) (Max) @ Vgs
98nC @ 4.5V
Drain to Source Voltage (Vdss)
20V
Drive Voltage (Max Rds On,Min Rds On)
1.8V 4.5V
Vgs (Max)
±8V
Drain Current-Max (Abs) (ID)
23A
Drain-source On Resistance-Max
0.004Ohm
DS Breakdown Voltage-Min
20V
RoHS Status
ROHS3 Compliant

Description

FDS6064N3 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 7.191pF @ 10V.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 23A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 20V in order to maintain normal operation.Operating this transistor requires a 20V drain to source voltage (Vdss).By using drive voltage (1.8V 4.5V), this device helps reduce its overall power consumption.

FDS6064N3 Features
a 20V drain to source voltage (Vdss)

FDS6064N3 Applications
There are a lot of Rochester Electronics, LLC
FDS6064N3 applications of single MOSFETs transistors.

LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools

FDS6064N3 More Descriptions

MOSFET N-CH 20V 23A 8-SOIC
MOSFET, N, SMD, FLMP, SO-8; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:20V; Current, Id Cont:23A; Resistance, Rds On:0.0034ohm; Voltage, Vgs Rds on Measurement:4.5V; Voltage, Vgs th Typ:0.6V; Case Style:SOIC; ;RoHS Compliant: Yes
MOSFET, N, SMD, FLMP, SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 23A; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.0034ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 600mV; Power Dissipation Pd: 3mW; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Current Id Max: 23A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Pulse Current Idm: 60A; Termination Type: Surface Mount Device; Voltage Vds Typ: 20V; Voltage Vgs Max: 8V; Voltage Vgs Rds on Measurement: 4.5V

Product Comparison

The three parts on the right have similar specifications to FDS6064N3.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Surface Mount

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Terminal Finish

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Case Connection

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

DS Breakdown Voltage-Min

RoHS Status

Lifecycle Status

Factory Lead Time

Contact Plating

Mount

Number of Pins

Weight

Published

ECCN Code

Resistance

Subcategory

Voltage - Rated DC

Current Rating

Element Configuration

Power Dissipation

Turn On Delay Time

Rise Time

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Dual Supply Voltage

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

Lead Free

View Compare
FDS6064N3

Fairchild/ON Semiconductor

Surface Mount

8-SOIC (0.154, 3.90mm Width)

YES

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®

e4

yes

Obsolete

1 (Unlimited)

8

NICKEL PALLADIUM GOLD

MOSFET (Metal Oxide)

DUAL

GULL WING

260

unknown

NOT SPECIFIED

8

R-PDSO-G8

COMMERCIAL

1

SINGLE WITH BUILT-IN DIODE

3W Ta

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

4m Ω @ 23A, 4.5V

1.5V @ 250μA

7.191pF @ 10V

23A Ta

98nC @ 4.5V

20V

1.8V 4.5V

±8V

23A

0.004Ohm

20V

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
FDS6375

Fairchild/ON Semiconductor

Surface Mount

8-SOIC (0.154, 3.90mm Width)

-

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

PowerTrench®

e4

yes

Active

1 (Unlimited)

8

Nickel/Palladium/Gold (Ni/Pd/Au)

MOSFET (Metal Oxide)

DUAL

GULL WING

-

-

-

-

-

-

1

-

2.5W Ta

ENHANCEMENT MODE

-

P-Channel

SWITCHING

24m Ω @ 8A, 4.5V

1.5V @ 250μA

2694pF @ 10V

8A Ta

36nC @ 4.5V

20V

2.5V 4.5V

±8V

8A

-

-

ROHS3 Compliant

ACTIVE (Last Updated: 1 day ago)

18 Weeks

Tin

Surface Mount

8

130mg

2001

EAR99

24MOhm

Other Transistors

-20V

-8A

Single

2.5W

12 ns

9ns

57 ns

124 ns

8A

-700mV

8V

-20V

-20V

-700 mV

1.5mm

5mm

4mm

No SVHC

No

Lead Free

FDS6064N3 vs FDS6375
FDS6688S

Fairchild/ON Semiconductor

Surface Mount

8-SOIC (0.154, 3.90mm Width)

YES

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

PowerTrench®

e3

yes

Obsolete

1 (Unlimited)

8

MATTE TIN

MOSFET (Metal Oxide)

DUAL

GULL WING

260

-

NOT SPECIFIED

8

R-PDSO-G8

COMMERCIAL

1

SINGLE WITH BUILT-IN DIODE

2.5W Ta

ENHANCEMENT MODE

-

N-Channel

SWITCHING

6m Ω @ 16A, 10V

3V @ 1mA

3.29pF @ 15V

16A Ta

78nC @ 10V

30V

4.5V 10V

±20V

16A

0.006Ohm

30V

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

FDS6064N3 vs FDS6688S
FDS6670AS

Fairchild/ON Semiconductor

Surface Mount

8-SOIC (0.154, 3.90mm Width)

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®, SyncFET™

e4

yes

Active

1 (Unlimited)

8

Nickel/Palladium/Gold (Ni/Pd/Au)

MOSFET (Metal Oxide)

DUAL

GULL WING

-

-

-

-

-

-

1

-

2.5W Ta

ENHANCEMENT MODE

-

N-Channel

SWITCHING

9m Ω @ 13.5A, 10V

3V @ 1mA

1540pF @ 15V

13.5A Ta

38nC @ 10V

-

4.5V 10V

±20V

-

-

-

ROHS3 Compliant

ACTIVE (Last Updated: 1 day ago)

18 Weeks

Tin

Surface Mount

8

130mg

2005

EAR99

9MOhm

-

30V

13.5A

Single

2.5W

10 ns

5ns

18 ns

27 ns

13.5A

-

20V

30V

-

-

1.5mm

5mm

4mm

-

No

Lead Free

FDS6064N3 vs FDS6670AS