Fairchild/ON Semiconductor FDS6064N7

Name: FDS6064N7
Brand: Fairchild/ON Semiconductor
SKU: 2851523-FDS6064N7
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FDS6064N7

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2851523-FDS6064N7

Description:: MOSFET N-CH 20V 23A 8-SOIC

ECAD Model:

Datasheet:: FDS6064N7

Specifications

Fairchild/ON Semiconductor FDS6064N7 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDS6064N7.

Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
PowerTrench®
JESD-609 Code
e4
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
8
Terminal Finish
NICKEL PALLADIUM GOLD
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
8
JESD-30 Code
R-PDSO-G8
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
3W Ta
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
3.5m Ω @ 23A, 4.5V
Vgs(th) (Max) @ Id
1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
7.191pF @ 10V
Current - Continuous Drain (Id) @ 25°C
23A Ta
Gate Charge (Qg) (Max) @ Vgs
98nC @ 4.5V
Drain to Source Voltage (Vdss)
20V
Drive Voltage (Max Rds On,Min Rds On)
1.8V 4.5V
Vgs (Max)
±8V
Drain Current-Max (Abs) (ID)
23A
Drain-source On Resistance-Max
0.0035Ohm
Pulsed Drain Current-Max (IDM)
60A
DS Breakdown Voltage-Min
20V
RoHS Status
ROHS3 Compliant

Description

FDS6064N7 Overview
The maximum input capacitance of this device is 7.191pF @ 10V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.As shown in the table below, the drain current of this device is 23A.There is no pulsed drain current maximum for this device based on its rated peak drain current 60A.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 20V.The drain-to-source voltage (Vdss) of this transistor needs to be at 20V in order to operate.Using drive voltage (1.8V 4.5V), this device helps reduce its power consumption.

FDS6064N7 Features
based on its rated peak drain current 60A.
a 20V drain to source voltage (Vdss)

FDS6064N7 Applications
There are a lot of Rochester Electronics, LLC
FDS6064N7 applications of single MOSFETs transistors.

Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,

FDS6064N7 More Descriptions

MOSFET N-CH 20V 23A 8-SOIC
OEMs, CMs ONLY (NO BROKERS)
MOSFET, N, SMD, FLMP, SO-8; Transistor Type:PowerTrench; Transistor Polarity:N; Voltage, Vds Typ:20V; Current, Id Cont:23A; Resistance, Rds On:0.0035ohm; Voltage, Vgs Rds on Measurement:4.5V; Voltage, Vgs th Typ:0.6V; Case Style:SOIC; Termination Type:SMD; Current, Idm Pulse:60A; Pins, No. of:8; Power Dissipation:3mW; Voltage, Vds Max:20V

Product Comparison

The three parts on the right have similar specifications to FDS6064N7.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Surface Mount

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Terminal Finish

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Case Connection

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

RoHS Status

Lifecycle Status

Factory Lead Time

Mount

Number of Pins

Weight

Published

ECCN Code

Resistance

Subcategory

Voltage - Rated DC

Current Rating

Element Configuration

Power Dissipation

Turn On Delay Time

Rise Time

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

Lead Free

Contact Plating

View Compare
FDS6064N7

Fairchild/ON Semiconductor

Surface Mount

8-SOIC (0.154, 3.90mm Width)

YES

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®

e4

yes

Obsolete

1 (Unlimited)

8

NICKEL PALLADIUM GOLD

MOSFET (Metal Oxide)

DUAL

GULL WING

260

NOT SPECIFIED

8

R-PDSO-G8

COMMERCIAL

1

SINGLE WITH BUILT-IN DIODE

3W Ta

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

3.5m Ω @ 23A, 4.5V

1.5V @ 250μA

7.191pF @ 10V

23A Ta

98nC @ 4.5V

20V

1.8V 4.5V

±8V

23A

0.0035Ohm

60A

20V

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
FDS6681Z

Fairchild/ON Semiconductor

-

SO-8

-

-

-

Tape & Reel (TR)

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

FDS6064N7 vs FDS6681Z
FDS6690AS

Fairchild/ON Semiconductor

Surface Mount

8-SOIC (0.154, 3.90mm Width)

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®, SyncFET™

e4

yes

Active

1 (Unlimited)

8

Nickel/Palladium/Gold (Ni/Pd/Au)

MOSFET (Metal Oxide)

DUAL

GULL WING

-

-

-

-

-

1

-

2.5W Ta

ENHANCEMENT MODE

-

N-Channel

SWITCHING

12m Ω @ 10A, 10V

3V @ 1mA

910pF @ 15V

10A Ta

23nC @ 10V

-

4.5V 10V

±20V

-

-

-

-

ROHS3 Compliant

ACTIVE (Last Updated: 1 day ago)

18 Weeks

Surface Mount

8

130mg

2004

EAR99

12MOhm

FET General Purpose Power

30V

10A

Single

2.5W

8 ns

5ns

6 ns

25 ns

10A

1.6V

20V

30V

1.6 V

1.5mm

5mm

4mm

No SVHC

No

Lead Free

-

FDS6064N7 vs FDS6690AS
FDS6670AS

Fairchild/ON Semiconductor

Surface Mount

8-SOIC (0.154, 3.90mm Width)

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®, SyncFET™

e4

yes

Active

1 (Unlimited)

8

Nickel/Palladium/Gold (Ni/Pd/Au)

MOSFET (Metal Oxide)

DUAL

GULL WING

-

-

-

-

-

1

-

2.5W Ta

ENHANCEMENT MODE

-

N-Channel

SWITCHING

9m Ω @ 13.5A, 10V

3V @ 1mA

1540pF @ 15V

13.5A Ta

38nC @ 10V

-

4.5V 10V

±20V

-

-

-

-

ROHS3 Compliant

ACTIVE (Last Updated: 1 day ago)

18 Weeks

Surface Mount

8

130mg

2005

EAR99

9MOhm

-

30V

13.5A

Single

2.5W

10 ns

5ns

18 ns

27 ns

13.5A

-

20V

30V

-

1.5mm

5mm

4mm

-

No

Lead Free

Tin

FDS6064N7 vs FDS6670AS

Certification

Related parts for FDS6064N7

FDS6609A

Fairchild/ON Semiconductor

MOSFET P-CH 30V 6.3A 8SOIC
FDS6375

Fairchild/ON Semiconductor

MOSFET P-CH 20V 8A 8-SOIC
FDS6064N3

Fairchild/ON Semiconductor

MOSFET N-CH 20V 23A 8-SOIC
FDS6688

Fairchild/ON Semiconductor

MOSFET N-CH 30V 16A 8SOIC
FDS6162N7

Fairchild/ON Semiconductor

MOSFET N-CH 20V 23A 8-SOIC
FDS6688S

Fairchild/ON Semiconductor

MOSFET N-CH 30V 16A 8SOIC
FDS6064N7

Fairchild/ON Semiconductor

MOSFET N-CH 20V 23A 8-SOIC
FDS6681Z

Fairchild/ON Semiconductor

MOSFET P-CH 30V 20A 8-SO
FDS6690AS

Fairchild/ON Semiconductor

MOSFET N-CH 30V 10A 8SOIC
FDS6670AS

Fairchild/ON Semiconductor

MOSFET N-CH 30V 13.5A 8SOIC

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FDS6064~~(5)~~
FDS606~~(5)~~
FDS60~~(5)~~
FDS6~~(170)~~
FDS~~(153)~~

Part Number	Manufacturers	Description	Stock	Price
FDS6064N7 DISTI #FDS6064N7TR-ND	ON Semiconductor	MOSFET N-CH 20V 23A 8-SOIC RoHS: Compliant	0
FDS6064N7 DISTI #FDS6064N7CT-ND	ON Semiconductor	MOSFET N-CH 20V 23A 8-SOIC RoHS: Compliant	0
FDS6064N7 DISTI #FDS6064N7DKR-ND	ON Semiconductor	MOSFET N-CH 20V 23A 8-SOIC RoHS: Compliant	0
FDS6064N7 DISTI #FDS6064N7	ON Semiconductor	- Bulk (Alt: FDS6064N7) RoHS: Compliant	0	410 $0.7969 820 $0.7919 1230 $0.7819 2050 $0.7719 4100 $0.7529
FDS6064N7 DISTI #512-FDS6064N7	ON Semiconductor	MOSFET SO-8 N-CH 20V 23A RoHS: Compliant	0
FDS6064N7 DISTI #	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 23A I(D), 20V, 0.00 RoHS: Compliant	310	1 $0.99 25 $0.92 100 $0.88 500 $0.85 1000 $0.8

Fairchild/ON Semiconductor FDS6064N7

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