Fairchild/ON Semiconductor FDS6690AS
- Part Number:
- FDS6690AS
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2848847-FDS6690AS
- Description:
- MOSFET N-CH 30V 10A 8SOIC
- Datasheet:
- FDS6690AS
Fairchild/ON Semiconductor FDS6690AS technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDS6690AS.
- Lifecycle StatusACTIVE (Last Updated: 1 day ago)
- Factory Lead Time18 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Number of Pins8
- Weight130mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesPowerTrench®, SyncFET™
- Published2004
- JESD-609 Codee4
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations8
- ECCN CodeEAR99
- Resistance12MOhm
- Terminal FinishNickel/Palladium/Gold (Ni/Pd/Au)
- SubcategoryFET General Purpose Power
- Voltage - Rated DC30V
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Current Rating10A
- Number of Elements1
- Power Dissipation-Max2.5W Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation2.5W
- Turn On Delay Time8 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs12m Ω @ 10A, 10V
- Vgs(th) (Max) @ Id3V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds910pF @ 15V
- Current - Continuous Drain (Id) @ 25°C10A Ta
- Gate Charge (Qg) (Max) @ Vgs23nC @ 10V
- Rise Time5ns
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)6 ns
- Turn-Off Delay Time25 ns
- Continuous Drain Current (ID)10A
- Threshold Voltage1.6V
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage30V
- Nominal Vgs1.6 V
- Height1.5mm
- Length5mm
- Width4mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
FDS6690AS Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 910pF @ 15V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 10A amps.In this device, the drain-source breakdown voltage is 30V and VGS=30V, so the drain-source breakdown voltage is 30V in this case.It is [25 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 8 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 1.6V.A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).
FDS6690AS Features
a continuous drain current (ID) of 10A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 25 ns
a threshold voltage of 1.6V
FDS6690AS Applications
There are a lot of ON Semiconductor
FDS6690AS applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 910pF @ 15V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 10A amps.In this device, the drain-source breakdown voltage is 30V and VGS=30V, so the drain-source breakdown voltage is 30V in this case.It is [25 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 8 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 1.6V.A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).
FDS6690AS Features
a continuous drain current (ID) of 10A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 25 ns
a threshold voltage of 1.6V
FDS6690AS Applications
There are a lot of ON Semiconductor
FDS6690AS applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
FDS6690AS More Descriptions
N-Channel 30 V 19 mOhm Surface Mount PowerTrench Mosfet - SOIC-8
Trans MOSFET N-CH 30V 10A 8-Pin SOIC N T/R - Tape and Reel
MOSFET, N CH, 30V, 0.01OHM, 10A, SOIC-8; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.01ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.6V; Power Dissipation Pd:2.5W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:-; SVHC:No SVHC (20-Jun-2013)
The FDS6690AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6690AS includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology. The performance of the FDS6690AS as the low-side switch in a synchronous rectifier is close to the performance of the FDS6690A in parallel with a Schottky diode.
Trans MOSFET N-CH 30V 10A 8-Pin SOIC N T/R - Tape and Reel
MOSFET, N CH, 30V, 0.01OHM, 10A, SOIC-8; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.01ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.6V; Power Dissipation Pd:2.5W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:-; SVHC:No SVHC (20-Jun-2013)
The FDS6690AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6690AS includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology. The performance of the FDS6690AS as the low-side switch in a synchronous rectifier is close to the performance of the FDS6690A in parallel with a Schottky diode.
The three parts on the right have similar specifications to FDS6690AS.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceTerminal FinishSubcategoryVoltage - Rated DCTechnologyTerminal PositionTerminal FormCurrent RatingNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageNominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSurface MountPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusConfigurationDrain to Source Voltage (Vdss)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxDS Breakdown Voltage-MinCase ConnectionPulsed Drain Current-Max (IDM)View Compare
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FDS6690ASACTIVE (Last Updated: 1 day ago)18 WeeksSurface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8130mgSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®, SyncFET™2004e4yesActive1 (Unlimited)8EAR9912MOhmNickel/Palladium/Gold (Ni/Pd/Au)FET General Purpose Power30VMOSFET (Metal Oxide)DUALGULL WING10A12.5W TaSingleENHANCEMENT MODE2.5W8 nsN-ChannelSWITCHING12m Ω @ 10A, 10V3V @ 1mA910pF @ 15V10A Ta23nC @ 10V5ns4.5V 10V±20V6 ns25 ns10A1.6V20V30V1.6 V1.5mm5mm4mmNo SVHCNoROHS3 CompliantLead Free---------------
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---Surface Mount8-SOIC (0.154, 3.90mm Width)--SILICON-55°C~175°C TJTape & Reel (TR)PowerTrench®-e3yesObsolete1 (Unlimited)8--MATTE TIN--MOSFET (Metal Oxide)DUALGULL WING-12.5W Ta-ENHANCEMENT MODE--N-ChannelSWITCHING6m Ω @ 16A, 10V3V @ 250μA3.888pF @ 15V16A Ta56nC @ 5V-4.5V 10V±20V------------ROHS3 Compliant-YES260unknownNOT SPECIFIED8R-PDSO-G8COMMERCIALSINGLE WITH BUILT-IN DIODE30V16A0.006Ohm30V--
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---Surface Mount8-SOIC (0.154, 3.90mm Width)--SILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®-e4yesObsolete1 (Unlimited)8--NICKEL PALLADIUM GOLD--MOSFET (Metal Oxide)DUALGULL WING-13W Ta-ENHANCEMENT MODE--N-ChannelSWITCHING3.5m Ω @ 23A, 4.5V1.5V @ 250μA5.521pF @ 10V23A Ta73nC @ 4.5V-2.5V 4.5V±12V------------ROHS3 Compliant-YES260-NOT SPECIFIED8R-PDSO-G8COMMERCIALSINGLE WITH BUILT-IN DIODE20V23A0.0035Ohm20VDRAIN60A
-
---Surface Mount8-SOIC (0.154, 3.90mm Width)--SILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®-e4yesObsolete1 (Unlimited)8--NICKEL PALLADIUM GOLD--MOSFET (Metal Oxide)DUALGULL WING-13W Ta-ENHANCEMENT MODE--N-ChannelSWITCHING3.5m Ω @ 23A, 4.5V1.5V @ 250μA7.191pF @ 10V23A Ta98nC @ 4.5V-1.8V 4.5V±8V------------ROHS3 Compliant-YES260-NOT SPECIFIED8R-PDSO-G8COMMERCIALSINGLE WITH BUILT-IN DIODE20V23A0.0035Ohm20VDRAIN60A
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