FDS6690AS

Fairchild/ON Semiconductor FDS6690AS

Part Number:
FDS6690AS
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2848847-FDS6690AS
Description:
MOSFET N-CH 30V 10A 8SOIC
ECAD Model:
Datasheet:
FDS6690AS

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Specifications
Fairchild/ON Semiconductor FDS6690AS technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDS6690AS.
  • Lifecycle Status
    ACTIVE (Last Updated: 1 day ago)
  • Factory Lead Time
    18 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-SOIC (0.154, 3.90mm Width)
  • Number of Pins
    8
  • Weight
    130mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    PowerTrench®, SyncFET™
  • Published
    2004
  • JESD-609 Code
    e4
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    8
  • ECCN Code
    EAR99
  • Resistance
    12MOhm
  • Terminal Finish
    Nickel/Palladium/Gold (Ni/Pd/Au)
  • Subcategory
    FET General Purpose Power
  • Voltage - Rated DC
    30V
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Current Rating
    10A
  • Number of Elements
    1
  • Power Dissipation-Max
    2.5W Ta
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    2.5W
  • Turn On Delay Time
    8 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    12m Ω @ 10A, 10V
  • Vgs(th) (Max) @ Id
    3V @ 1mA
  • Input Capacitance (Ciss) (Max) @ Vds
    910pF @ 15V
  • Current - Continuous Drain (Id) @ 25°C
    10A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    23nC @ 10V
  • Rise Time
    5ns
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    6 ns
  • Turn-Off Delay Time
    25 ns
  • Continuous Drain Current (ID)
    10A
  • Threshold Voltage
    1.6V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    30V
  • Nominal Vgs
    1.6 V
  • Height
    1.5mm
  • Length
    5mm
  • Width
    4mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
FDS6690AS Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 910pF @ 15V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 10A amps.In this device, the drain-source breakdown voltage is 30V and VGS=30V, so the drain-source breakdown voltage is 30V in this case.It is [25 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 8 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 1.6V.A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).

FDS6690AS Features
a continuous drain current (ID) of 10A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 25 ns
a threshold voltage of 1.6V


FDS6690AS Applications
There are a lot of ON Semiconductor
FDS6690AS applications of single MOSFETs transistors.


Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
FDS6690AS More Descriptions
N-Channel 30 V 19 mOhm Surface Mount PowerTrench Mosfet - SOIC-8
Trans MOSFET N-CH 30V 10A 8-Pin SOIC N T/R - Tape and Reel
MOSFET, N CH, 30V, 0.01OHM, 10A, SOIC-8; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.01ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.6V; Power Dissipation Pd:2.5W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:-; SVHC:No SVHC (20-Jun-2013)
The FDS6690AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6690AS includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology. The performance of the FDS6690AS as the low-side switch in a synchronous rectifier is close to the performance of the FDS6690A in parallel with a Schottky diode.
Product Comparison
The three parts on the right have similar specifications to FDS6690AS.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Terminal Finish
    Subcategory
    Voltage - Rated DC
    Technology
    Terminal Position
    Terminal Form
    Current Rating
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Surface Mount
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    JESD-30 Code
    Qualification Status
    Configuration
    Drain to Source Voltage (Vdss)
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    DS Breakdown Voltage-Min
    Case Connection
    Pulsed Drain Current-Max (IDM)
    View Compare
  • FDS6690AS
    FDS6690AS
    ACTIVE (Last Updated: 1 day ago)
    18 Weeks
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    130mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®, SyncFET™
    2004
    e4
    yes
    Active
    1 (Unlimited)
    8
    EAR99
    12MOhm
    Nickel/Palladium/Gold (Ni/Pd/Au)
    FET General Purpose Power
    30V
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    10A
    1
    2.5W Ta
    Single
    ENHANCEMENT MODE
    2.5W
    8 ns
    N-Channel
    SWITCHING
    12m Ω @ 10A, 10V
    3V @ 1mA
    910pF @ 15V
    10A Ta
    23nC @ 10V
    5ns
    4.5V 10V
    ±20V
    6 ns
    25 ns
    10A
    1.6V
    20V
    30V
    1.6 V
    1.5mm
    5mm
    4mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • FDS6688
    -
    -
    -
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    -
    -
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    PowerTrench®
    -
    e3
    yes
    Obsolete
    1 (Unlimited)
    8
    -
    -
    MATTE TIN
    -
    -
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    -
    1
    2.5W Ta
    -
    ENHANCEMENT MODE
    -
    -
    N-Channel
    SWITCHING
    6m Ω @ 16A, 10V
    3V @ 250μA
    3.888pF @ 15V
    16A Ta
    56nC @ 5V
    -
    4.5V 10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    YES
    260
    unknown
    NOT SPECIFIED
    8
    R-PDSO-G8
    COMMERCIAL
    SINGLE WITH BUILT-IN DIODE
    30V
    16A
    0.006Ohm
    30V
    -
    -
  • FDS6162N7
    -
    -
    -
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    -
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    -
    e4
    yes
    Obsolete
    1 (Unlimited)
    8
    -
    -
    NICKEL PALLADIUM GOLD
    -
    -
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    -
    1
    3W Ta
    -
    ENHANCEMENT MODE
    -
    -
    N-Channel
    SWITCHING
    3.5m Ω @ 23A, 4.5V
    1.5V @ 250μA
    5.521pF @ 10V
    23A Ta
    73nC @ 4.5V
    -
    2.5V 4.5V
    ±12V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    YES
    260
    -
    NOT SPECIFIED
    8
    R-PDSO-G8
    COMMERCIAL
    SINGLE WITH BUILT-IN DIODE
    20V
    23A
    0.0035Ohm
    20V
    DRAIN
    60A
  • FDS6064N7
    -
    -
    -
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    -
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    -
    e4
    yes
    Obsolete
    1 (Unlimited)
    8
    -
    -
    NICKEL PALLADIUM GOLD
    -
    -
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    -
    1
    3W Ta
    -
    ENHANCEMENT MODE
    -
    -
    N-Channel
    SWITCHING
    3.5m Ω @ 23A, 4.5V
    1.5V @ 250μA
    7.191pF @ 10V
    23A Ta
    98nC @ 4.5V
    -
    1.8V 4.5V
    ±8V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    YES
    260
    -
    NOT SPECIFIED
    8
    R-PDSO-G8
    COMMERCIAL
    SINGLE WITH BUILT-IN DIODE
    20V
    23A
    0.0035Ohm
    20V
    DRAIN
    60A
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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