Fairchild/ON Semiconductor FDS6688
- Part Number:
- FDS6688
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2851837-FDS6688
- Description:
- MOSFET N-CH 30V 16A 8SOIC
- Datasheet:
- FDS6688
Fairchild/ON Semiconductor FDS6688 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDS6688.
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Surface MountYES
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTape & Reel (TR)
- SeriesPowerTrench®
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations8
- Terminal FinishMATTE TIN
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Reach Compliance Codeunknown
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count8
- JESD-30 CodeR-PDSO-G8
- Qualification StatusCOMMERCIAL
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max2.5W Ta
- Operating ModeENHANCEMENT MODE
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs6m Ω @ 16A, 10V
- Vgs(th) (Max) @ Id3V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds3.888pF @ 15V
- Current - Continuous Drain (Id) @ 25°C16A Ta
- Gate Charge (Qg) (Max) @ Vgs56nC @ 5V
- Drain to Source Voltage (Vdss)30V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Drain Current-Max (Abs) (ID)16A
- Drain-source On Resistance-Max0.006Ohm
- DS Breakdown Voltage-Min30V
- RoHS StatusROHS3 Compliant
FDS6688 Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 3.888pF @ 15V.16A is the drain current of this device, which is the maximum continuous current transistor can carry.To maintain normal operation, the DS breakdown voltage should be kept above 30V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 30V.Using drive voltage (4.5V 10V) reduces this device's overall power consumption.
FDS6688 Features
a 30V drain to source voltage (Vdss)
FDS6688 Applications
There are a lot of Rochester Electronics, LLC
FDS6688 applications of single MOSFETs transistors.
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 3.888pF @ 15V.16A is the drain current of this device, which is the maximum continuous current transistor can carry.To maintain normal operation, the DS breakdown voltage should be kept above 30V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 30V.Using drive voltage (4.5V 10V) reduces this device's overall power consumption.
FDS6688 Features
a 30V drain to source voltage (Vdss)
FDS6688 Applications
There are a lot of Rochester Electronics, LLC
FDS6688 applications of single MOSFETs transistors.
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
FDS6688 More Descriptions
Trans MOSFET N-CH 30V 16A 8-Pin SOIC T/R
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:16A; On Resistance, Rds(on):0.006ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:8-SOIC ;RoHS Compliant: No
MOSFET, N, SMD, SO-8; Transistor Type:PowerTrench; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:16A; Resistance, Rds On:0.006ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:1.8V; Case Style:SOIC; Termination Type:SMD; Current, Idm Pulse:50A; No. of Pins:8; Power Dissipation:2.5mW; Transistors, No. of:1; Voltage, Vds Max:30V
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:16A; On Resistance, Rds(on):0.006ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:8-SOIC ;RoHS Compliant: No
MOSFET, N, SMD, SO-8; Transistor Type:PowerTrench; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:16A; Resistance, Rds On:0.006ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:1.8V; Case Style:SOIC; Termination Type:SMD; Current, Idm Pulse:50A; No. of Pins:8; Power Dissipation:2.5mW; Transistors, No. of:1; Voltage, Vds Max:30V
The three parts on the right have similar specifications to FDS6688.
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ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingSeriesJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationPower Dissipation-MaxOperating ModeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxDS Breakdown Voltage-MinRoHS StatusCase ConnectionPulsed Drain Current-Max (IDM)View Compare
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FDS6688Surface Mount8-SOIC (0.154, 3.90mm Width)YESSILICON-55°C~175°C TJTape & Reel (TR)PowerTrench®e3yesObsolete1 (Unlimited)8MATTE TINMOSFET (Metal Oxide)DUALGULL WING260unknownNOT SPECIFIED8R-PDSO-G8COMMERCIAL1SINGLE WITH BUILT-IN DIODE2.5W TaENHANCEMENT MODEN-ChannelSWITCHING6m Ω @ 16A, 10V3V @ 250μA3.888pF @ 15V16A Ta56nC @ 5V30V4.5V 10V±20V16A0.006Ohm30VROHS3 Compliant---
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Surface Mount8-SOIC (0.154, 3.90mm Width)YESSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®e4yesObsolete1 (Unlimited)8NICKEL PALLADIUM GOLDMOSFET (Metal Oxide)DUALGULL WING260unknownNOT SPECIFIED8R-PDSO-G8COMMERCIAL1SINGLE WITH BUILT-IN DIODE3W TaENHANCEMENT MODEN-ChannelSWITCHING4m Ω @ 23A, 4.5V1.5V @ 250μA7.191pF @ 10V23A Ta98nC @ 4.5V20V1.8V 4.5V±8V23A0.004Ohm20VROHS3 CompliantDRAIN-
-
Surface Mount8-SOIC (0.154, 3.90mm Width)YESSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®e4yesObsolete1 (Unlimited)8NICKEL PALLADIUM GOLDMOSFET (Metal Oxide)DUALGULL WING260-NOT SPECIFIED8R-PDSO-G8COMMERCIAL1SINGLE WITH BUILT-IN DIODE3W TaENHANCEMENT MODEN-ChannelSWITCHING3.5m Ω @ 23A, 4.5V1.5V @ 250μA7.191pF @ 10V23A Ta98nC @ 4.5V20V1.8V 4.5V±8V23A0.0035Ohm20VROHS3 CompliantDRAIN60A
-
-SO-8---Tape & Reel (TR)---------------------------------RoHS Compliant--
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