Fairchild/ON Semiconductor FDS6162N7

Name: FDS6162N7
Brand: Fairchild/ON Semiconductor
SKU: 2851625-FDS6162N7
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FDS6162N7

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2851625-FDS6162N7

Description:: MOSFET N-CH 20V 23A 8-SOIC

ECAD Model:

Datasheet:: FDS6162N7

Specifications

Fairchild/ON Semiconductor FDS6162N7 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDS6162N7.

Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
PowerTrench®
JESD-609 Code
e4
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
8
Terminal Finish
NICKEL PALLADIUM GOLD
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
8
JESD-30 Code
R-PDSO-G8
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
3W Ta
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
3.5m Ω @ 23A, 4.5V
Vgs(th) (Max) @ Id
1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
5.521pF @ 10V
Current - Continuous Drain (Id) @ 25°C
23A Ta
Gate Charge (Qg) (Max) @ Vgs
73nC @ 4.5V
Drain to Source Voltage (Vdss)
20V
Drive Voltage (Max Rds On,Min Rds On)
2.5V 4.5V
Vgs (Max)
±12V
Drain Current-Max (Abs) (ID)
23A
Drain-source On Resistance-Max
0.0035Ohm
Pulsed Drain Current-Max (IDM)
60A
DS Breakdown Voltage-Min
20V
RoHS Status
ROHS3 Compliant

Description

FDS6162N7 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 5.521pF @ 10V.The drain current is the maximum continuous current this device can conduct, which is 23A.Pulsed drain current is maximum rated peak drain current 60A.A normal operation of the DS requires keeping the breakdown voltage above 20V.This transistor requires a drain-source voltage (Vdss) of 20V.In order to reduce power consumption, this device uses a drive voltage of 2.5V 4.5V volts (2.5V 4.5V).

FDS6162N7 Features
based on its rated peak drain current 60A.
a 20V drain to source voltage (Vdss)

FDS6162N7 Applications
There are a lot of Rochester Electronics, LLC
FDS6162N7 applications of single MOSFETs transistors.

Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching

FDS6162N7 More Descriptions

Trans MOSFET N-CH 20V 23A 8-Pin FLMP SOIC T/R
TRANS MOSFET N-CH 20V 23A 8SOIC - Rail/Tube
20V/12V, 4.5/6MO, NCH, SINGLE, SO8 FLMP, 300A GOX, PTII
French Electronic Distributor since 1988
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:23A; On Resistance, Rds(on):3.5mohm; Rds(on) Test Voltage, Vgs:4.5V; Package/Case:SO-8 ;RoHS Compliant: Yes

Product Comparison

The three parts on the right have similar specifications to FDS6162N7.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Surface Mount

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Terminal Finish

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Case Connection

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

RoHS Status

Lifecycle Status

Factory Lead Time

Contact Plating

Mount

Number of Pins

Weight

Published

ECCN Code

Resistance

Voltage - Rated DC

Current Rating

Element Configuration

Power Dissipation

Turn On Delay Time

Rise Time

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Height

Length

Width

Radiation Hardening

Lead Free

View Compare
FDS6162N7

Fairchild/ON Semiconductor

Surface Mount

8-SOIC (0.154, 3.90mm Width)

YES

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®

e4

yes

Obsolete

1 (Unlimited)

8

NICKEL PALLADIUM GOLD

MOSFET (Metal Oxide)

DUAL

GULL WING

260

NOT SPECIFIED

8

R-PDSO-G8

COMMERCIAL

1

SINGLE WITH BUILT-IN DIODE

3W Ta

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

3.5m Ω @ 23A, 4.5V

1.5V @ 250μA

5.521pF @ 10V

23A Ta

73nC @ 4.5V

20V

2.5V 4.5V

±12V

23A

0.0035Ohm

60A

20V

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
FDS6064N7

Fairchild/ON Semiconductor

Surface Mount

8-SOIC (0.154, 3.90mm Width)

YES

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®

e4

yes

Obsolete

1 (Unlimited)

8

NICKEL PALLADIUM GOLD

MOSFET (Metal Oxide)

DUAL

GULL WING

260

NOT SPECIFIED

8

R-PDSO-G8

COMMERCIAL

1

SINGLE WITH BUILT-IN DIODE

3W Ta

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

3.5m Ω @ 23A, 4.5V

1.5V @ 250μA

7.191pF @ 10V

23A Ta

98nC @ 4.5V

20V

1.8V 4.5V

±8V

23A

0.0035Ohm

60A

20V

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

FDS6162N7 vs FDS6064N7
FDS6681Z

Fairchild/ON Semiconductor

-

SO-8

-

-

-

Tape & Reel (TR)

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

FDS6162N7 vs FDS6681Z
FDS6670AS

Fairchild/ON Semiconductor

Surface Mount

8-SOIC (0.154, 3.90mm Width)

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®, SyncFET™

e4

yes

Active

1 (Unlimited)

8

Nickel/Palladium/Gold (Ni/Pd/Au)

MOSFET (Metal Oxide)

DUAL

GULL WING

-

-

-

-

-

1

-

2.5W Ta

ENHANCEMENT MODE

-

N-Channel

SWITCHING

9m Ω @ 13.5A, 10V

3V @ 1mA

1540pF @ 15V

13.5A Ta

38nC @ 10V

-

4.5V 10V

±20V

-

-

-

-

ROHS3 Compliant

ACTIVE (Last Updated: 1 day ago)

18 Weeks

Tin

Surface Mount

8

130mg

2005

EAR99

9MOhm

30V

13.5A

Single

2.5W

10 ns

5ns

18 ns

27 ns

13.5A

20V

30V

1.5mm

5mm

4mm

No

Lead Free

FDS6162N7 vs FDS6670AS