Fairchild/ON Semiconductor FDS6609A
- Part Number:
- FDS6609A
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 3586557-FDS6609A
- Description:
- MOSFET P-CH 30V 6.3A 8SOIC
- ECAD Model:
-
- Datasheet:
- FDS6609A
Fairchild/ON Semiconductor FDS6609A technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDS6609A.
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Surface MountYES
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesPowerTrench®
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations8
- Terminal FinishMATTE TIN
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count8
- JESD-30 CodeR-PDSO-G8
- Qualification StatusCOMMERCIAL
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max2.5W Ta
- Operating ModeENHANCEMENT MODE
- FET TypeP-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs32m Ω @ 7A, 10V
- Vgs(th) (Max) @ Id3V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds930pF @ 15V
- Current - Continuous Drain (Id) @ 25°C6.3A Ta
- Gate Charge (Qg) (Max) @ Vgs29nC @ 10V
- Drain to Source Voltage (Vdss)30V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Drain Current-Max (Abs) (ID)6.3A
- Drain-source On Resistance-Max0.032Ohm
- DS Breakdown Voltage-Min30V
- RoHS StatusROHS3 Compliant
FDS6609A Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 930pF @ 15V.6.3A is the drain current of this device, which is the maximum continuous current transistor can carry.To maintain normal operation, the DS breakdown voltage should be kept above 30V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 30V.Using drive voltage (4.5V 10V) reduces this device's overall power consumption.
FDS6609A Features
a 30V drain to source voltage (Vdss)
FDS6609A Applications
There are a lot of Rochester Electronics, LLC
FDS6609A applications of single MOSFETs transistors.
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 930pF @ 15V.6.3A is the drain current of this device, which is the maximum continuous current transistor can carry.To maintain normal operation, the DS breakdown voltage should be kept above 30V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 30V.Using drive voltage (4.5V 10V) reduces this device's overall power consumption.
FDS6609A Features
a 30V drain to source voltage (Vdss)
FDS6609A Applications
There are a lot of Rochester Electronics, LLC
FDS6609A applications of single MOSFETs transistors.
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
FDS6609A More Descriptions
MOSFET P-CH 30V 6.3A 8SOIC
SMALL SIGNAL P-CHANNEL MOSFET
OEMs, CMs ONLY (NO BROKERS)
MOSFETs SO-8
SMALL SIGNAL P-CHANNEL MOSFET
OEMs, CMs ONLY (NO BROKERS)
MOSFETs SO-8
The three parts on the right have similar specifications to FDS6609A.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingSeriesJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationPower Dissipation-MaxOperating ModeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxDS Breakdown Voltage-MinRoHS StatusCase ConnectionPulsed Drain Current-Max (IDM)Lifecycle StatusFactory Lead TimeMountNumber of PinsWeightPublishedECCN CodeResistanceSubcategoryVoltage - Rated DCCurrent RatingElement ConfigurationPower DissipationTurn On Delay TimeRise TimeFall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageNominal VgsHeightLengthWidthREACH SVHCRadiation HardeningLead FreeView Compare
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FDS6609ASurface Mount8-SOIC (0.154, 3.90mm Width)YESSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®e3yesObsolete1 (Unlimited)8MATTE TINMOSFET (Metal Oxide)DUALGULL WING260NOT SPECIFIED8R-PDSO-G8COMMERCIAL1SINGLE WITH BUILT-IN DIODE2.5W TaENHANCEMENT MODEP-ChannelSWITCHING32m Ω @ 7A, 10V3V @ 250μA930pF @ 15V6.3A Ta29nC @ 10V30V4.5V 10V±20V6.3A0.032Ohm30VROHS3 Compliant------------------------------- -
Surface Mount8-SOIC (0.154, 3.90mm Width)YESSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®e4yesObsolete1 (Unlimited)8NICKEL PALLADIUM GOLDMOSFET (Metal Oxide)DUALGULL WING260NOT SPECIFIED8R-PDSO-G8COMMERCIAL1SINGLE WITH BUILT-IN DIODE3W TaENHANCEMENT MODEN-ChannelSWITCHING3.5m Ω @ 23A, 4.5V1.5V @ 250μA5.521pF @ 10V23A Ta73nC @ 4.5V20V2.5V 4.5V±12V23A0.0035Ohm20VROHS3 CompliantDRAIN60A----------------------------
-
-SO-8---Tape & Reel (TR)--------------------------------RoHS Compliant------------------------------
-
Surface Mount8-SOIC (0.154, 3.90mm Width)-SILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®, SyncFET™e4yesActive1 (Unlimited)8Nickel/Palladium/Gold (Ni/Pd/Au)MOSFET (Metal Oxide)DUALGULL WING-----1-2.5W TaENHANCEMENT MODEN-ChannelSWITCHING12m Ω @ 10A, 10V3V @ 1mA910pF @ 15V10A Ta23nC @ 10V-4.5V 10V±20V---ROHS3 Compliant--ACTIVE (Last Updated: 1 day ago)18 WeeksSurface Mount8130mg2004EAR9912MOhmFET General Purpose Power30V10ASingle2.5W8 ns5ns6 ns25 ns10A1.6V20V30V1.6 V1.5mm5mm4mmNo SVHCNoLead Free
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