FDS6680A

Fairchild/ON Semiconductor FDS6680A

Part Number:
FDS6680A
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
3585977-FDS6680A
Description:
MOSFET N-CH 30V 12.5A 8-SOIC
ECAD Model:
Datasheet:
FDS6680A

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Specifications
Fairchild/ON Semiconductor FDS6680A technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDS6680A.
  • Lifecycle Status
    ACTIVE (Last Updated: 1 day ago)
  • Factory Lead Time
    18 Weeks
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-SOIC (0.154, 3.90mm Width)
  • Number of Pins
    8
  • Weight
    130mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    PowerTrench®
  • Published
    2004
  • JESD-609 Code
    e4
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    8
  • Termination
    SMD/SMT
  • ECCN Code
    EAR99
  • Resistance
    9.5MOhm
  • Terminal Finish
    Nickel/Palladium/Gold (Ni/Pd/Au)
  • Additional Feature
    LOGIC LEVEL COMPATIBLE
  • Subcategory
    FET General Purpose Power
  • Voltage - Rated DC
    30V
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Current Rating
    12.5A
  • Number of Elements
    1
  • Power Dissipation-Max
    2.5W Ta
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    2.5W
  • Turn On Delay Time
    10 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    9.5m Ω @ 12.5A, 10V
  • Vgs(th) (Max) @ Id
    3V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1620pF @ 15V
  • Current - Continuous Drain (Id) @ 25°C
    12.5A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    23nC @ 5V
  • Rise Time
    5ns
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    15 ns
  • Turn-Off Delay Time
    27 ns
  • Continuous Drain Current (ID)
    12.5A
  • Threshold Voltage
    2V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    30V
  • Dual Supply Voltage
    30V
  • Recovery Time
    28 ns
  • Nominal Vgs
    2 V
  • Height
    1.5mm
  • Length
    5mm
  • Width
    4mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
Description
The FDS6680A is a 30V N-channel logic level PowerTrench? MOSFET with a low gate charge and low on-state resistance for enhanced switching performance. The most recent medium voltage power MOSFETs are optimized power switches that combine a tiny gate charge (QG), a small reverse recovery charge (Qrr), and a soft reverse recovery body diode to provide quick switching for synchronous rectification in AC/DC power supplies. It makes use of a charge-balancing shielded-gate arrangement. The FOM (figure of merit (QGxRDS(ON)) of these devices is 66 percent lower than that of earlier generations because to this superior technology. Because it can minimize the undesired voltage spikes in synchronous rectification, the soft body diode performance of the new PowerTrench? MOSFET can eliminate snubber circuits or replace higher voltage ratings - MOSFET requires circuit. This product is intended for general use and can be used in a variety of situations.

Features
? 12.5 A, 30 V RDS(ON) = 9.5 m? @ VGS = 10 V                       RDS(ON) = 13 m? @ VGS = 4.5 V ? Exceptionally cheap gate charge ? Trench technique with high performance for exceptionally low RDS (ON) ? Capability to handle high power and current ? Extremely low RDS with high-performance trench technology (on)

Applications
? Switch the negative supply to the motor for reverse direction (low-side switching) ? Switch ? Auto intensity control ? Radio ? Passive element
FDS6680A More Descriptions
Trans MOSFET N-CH 30V 12.5A 8-Pin SOIC N T/R - Product that comes on tape, but is not reeled
N-Channel PowerTrench® MOSFET, Logic Level, 30V, 12.5A, 9.5mΩ
N-Channel 30 V 9.5 mOhm Surface Mount Logic Level PowerTrench Mosfet -SOIC-8
Trans MOSFET N-CH 30V 12.5A 8-Pin SOIC N T/R
This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
MOSFET, N, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:12.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):9.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:12.5A; Package / Case:SOIC; Power Dissipation Pd:2.5W; Power Dissipation Pd:2.5W; Pulse Current Idm:50A; SMD Marking:FDS6680A; Termination Type:SMD; Voltage Vds:30V; Voltage Vds Typ:30V; Voltage Vgs Max:2V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Min:1V
Product Comparison
The three parts on the right have similar specifications to FDS6680A.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Termination
    ECCN Code
    Resistance
    Terminal Finish
    Additional Feature
    Subcategory
    Voltage - Rated DC
    Technology
    Terminal Position
    Terminal Form
    Current Rating
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Dual Supply Voltage
    Recovery Time
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Surface Mount
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    JESD-30 Code
    Qualification Status
    Configuration
    Drain to Source Voltage (Vdss)
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    DS Breakdown Voltage-Min
    Case Connection
    Pulsed Drain Current-Max (IDM)
    View Compare
  • FDS6680A
    FDS6680A
    ACTIVE (Last Updated: 1 day ago)
    18 Weeks
    Tin
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    130mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    2004
    e4
    yes
    Active
    1 (Unlimited)
    8
    SMD/SMT
    EAR99
    9.5MOhm
    Nickel/Palladium/Gold (Ni/Pd/Au)
    LOGIC LEVEL COMPATIBLE
    FET General Purpose Power
    30V
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    12.5A
    1
    2.5W Ta
    Single
    ENHANCEMENT MODE
    2.5W
    10 ns
    N-Channel
    SWITCHING
    9.5m Ω @ 12.5A, 10V
    3V @ 250μA
    1620pF @ 15V
    12.5A Ta
    23nC @ 5V
    5ns
    4.5V 10V
    ±20V
    15 ns
    27 ns
    12.5A
    2V
    20V
    30V
    30V
    28 ns
    2 V
    1.5mm
    5mm
    4mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • FDS6688
    -
    -
    -
    -
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    -
    -
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    PowerTrench®
    -
    e3
    yes
    Obsolete
    1 (Unlimited)
    8
    -
    -
    -
    MATTE TIN
    -
    -
    -
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    -
    1
    2.5W Ta
    -
    ENHANCEMENT MODE
    -
    -
    N-Channel
    SWITCHING
    6m Ω @ 16A, 10V
    3V @ 250μA
    3.888pF @ 15V
    16A Ta
    56nC @ 5V
    -
    4.5V 10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    YES
    260
    unknown
    NOT SPECIFIED
    8
    R-PDSO-G8
    COMMERCIAL
    SINGLE WITH BUILT-IN DIODE
    30V
    16A
    0.006Ohm
    30V
    -
    -
  • FDS6162N7
    -
    -
    -
    -
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    -
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    -
    e4
    yes
    Obsolete
    1 (Unlimited)
    8
    -
    -
    -
    NICKEL PALLADIUM GOLD
    -
    -
    -
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    -
    1
    3W Ta
    -
    ENHANCEMENT MODE
    -
    -
    N-Channel
    SWITCHING
    3.5m Ω @ 23A, 4.5V
    1.5V @ 250μA
    5.521pF @ 10V
    23A Ta
    73nC @ 4.5V
    -
    2.5V 4.5V
    ±12V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    YES
    260
    -
    NOT SPECIFIED
    8
    R-PDSO-G8
    COMMERCIAL
    SINGLE WITH BUILT-IN DIODE
    20V
    23A
    0.0035Ohm
    20V
    DRAIN
    60A
  • FDS6064N7
    -
    -
    -
    -
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    -
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    -
    e4
    yes
    Obsolete
    1 (Unlimited)
    8
    -
    -
    -
    NICKEL PALLADIUM GOLD
    -
    -
    -
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    -
    1
    3W Ta
    -
    ENHANCEMENT MODE
    -
    -
    N-Channel
    SWITCHING
    3.5m Ω @ 23A, 4.5V
    1.5V @ 250μA
    7.191pF @ 10V
    23A Ta
    98nC @ 4.5V
    -
    1.8V 4.5V
    ±8V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    YES
    260
    -
    NOT SPECIFIED
    8
    R-PDSO-G8
    COMMERCIAL
    SINGLE WITH BUILT-IN DIODE
    20V
    23A
    0.0035Ohm
    20V
    DRAIN
    60A
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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