Fairchild/ON Semiconductor FDS6680A
- Part Number:
- FDS6680A
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 3585977-FDS6680A
- Description:
- MOSFET N-CH 30V 12.5A 8-SOIC
- Datasheet:
- FDS6680A
Fairchild/ON Semiconductor FDS6680A technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDS6680A.
- Lifecycle StatusACTIVE (Last Updated: 1 day ago)
- Factory Lead Time18 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Number of Pins8
- Weight130mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesPowerTrench®
- Published2004
- JESD-609 Codee4
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations8
- TerminationSMD/SMT
- ECCN CodeEAR99
- Resistance9.5MOhm
- Terminal FinishNickel/Palladium/Gold (Ni/Pd/Au)
- Additional FeatureLOGIC LEVEL COMPATIBLE
- SubcategoryFET General Purpose Power
- Voltage - Rated DC30V
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Current Rating12.5A
- Number of Elements1
- Power Dissipation-Max2.5W Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation2.5W
- Turn On Delay Time10 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs9.5m Ω @ 12.5A, 10V
- Vgs(th) (Max) @ Id3V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1620pF @ 15V
- Current - Continuous Drain (Id) @ 25°C12.5A Ta
- Gate Charge (Qg) (Max) @ Vgs23nC @ 5V
- Rise Time5ns
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)15 ns
- Turn-Off Delay Time27 ns
- Continuous Drain Current (ID)12.5A
- Threshold Voltage2V
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage30V
- Dual Supply Voltage30V
- Recovery Time28 ns
- Nominal Vgs2 V
- Height1.5mm
- Length5mm
- Width4mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
Description
The FDS6680A is a 30V N-channel logic level PowerTrench? MOSFET with a low gate charge and low on-state resistance for enhanced switching performance. The most recent medium voltage power MOSFETs are optimized power switches that combine a tiny gate charge (QG), a small reverse recovery charge (Qrr), and a soft reverse recovery body diode to provide quick switching for synchronous rectification in AC/DC power supplies. It makes use of a charge-balancing shielded-gate arrangement. The FOM (figure of merit (QGxRDS(ON)) of these devices is 66 percent lower than that of earlier generations because to this superior technology. Because it can minimize the undesired voltage spikes in synchronous rectification, the soft body diode performance of the new PowerTrench? MOSFET can eliminate snubber circuits or replace higher voltage ratings - MOSFET requires circuit. This product is intended for general use and can be used in a variety of situations.
Features
? 12.5 A, 30 V RDS(ON) = 9.5 m? @ VGS = 10 V RDS(ON) = 13 m? @ VGS = 4.5 V ? Exceptionally cheap gate charge ? Trench technique with high performance for exceptionally low RDS (ON) ? Capability to handle high power and current ? Extremely low RDS with high-performance trench technology (on)
Applications
? Switch the negative supply to the motor for reverse direction (low-side switching) ? Switch ? Auto intensity control ? Radio ? Passive element
The FDS6680A is a 30V N-channel logic level PowerTrench? MOSFET with a low gate charge and low on-state resistance for enhanced switching performance. The most recent medium voltage power MOSFETs are optimized power switches that combine a tiny gate charge (QG), a small reverse recovery charge (Qrr), and a soft reverse recovery body diode to provide quick switching for synchronous rectification in AC/DC power supplies. It makes use of a charge-balancing shielded-gate arrangement. The FOM (figure of merit (QGxRDS(ON)) of these devices is 66 percent lower than that of earlier generations because to this superior technology. Because it can minimize the undesired voltage spikes in synchronous rectification, the soft body diode performance of the new PowerTrench? MOSFET can eliminate snubber circuits or replace higher voltage ratings - MOSFET requires circuit. This product is intended for general use and can be used in a variety of situations.
Features
? 12.5 A, 30 V RDS(ON) = 9.5 m? @ VGS = 10 V RDS(ON) = 13 m? @ VGS = 4.5 V ? Exceptionally cheap gate charge ? Trench technique with high performance for exceptionally low RDS (ON) ? Capability to handle high power and current ? Extremely low RDS with high-performance trench technology (on)
Applications
? Switch the negative supply to the motor for reverse direction (low-side switching) ? Switch ? Auto intensity control ? Radio ? Passive element
FDS6680A More Descriptions
Trans MOSFET N-CH 30V 12.5A 8-Pin SOIC N T/R - Product that comes on tape, but is not reeled
N-Channel PowerTrench® MOSFET, Logic Level, 30V, 12.5A, 9.5mΩ
N-Channel 30 V 9.5 mOhm Surface Mount Logic Level PowerTrench Mosfet -SOIC-8
Trans MOSFET N-CH 30V 12.5A 8-Pin SOIC N T/R
This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
MOSFET, N, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:12.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):9.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:12.5A; Package / Case:SOIC; Power Dissipation Pd:2.5W; Power Dissipation Pd:2.5W; Pulse Current Idm:50A; SMD Marking:FDS6680A; Termination Type:SMD; Voltage Vds:30V; Voltage Vds Typ:30V; Voltage Vgs Max:2V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Min:1V
N-Channel PowerTrench® MOSFET, Logic Level, 30V, 12.5A, 9.5mΩ
N-Channel 30 V 9.5 mOhm Surface Mount Logic Level PowerTrench Mosfet -SOIC-8
Trans MOSFET N-CH 30V 12.5A 8-Pin SOIC N T/R
This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
MOSFET, N, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:12.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):9.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:12.5A; Package / Case:SOIC; Power Dissipation Pd:2.5W; Power Dissipation Pd:2.5W; Pulse Current Idm:50A; SMD Marking:FDS6680A; Termination Type:SMD; Voltage Vds:30V; Voltage Vds Typ:30V; Voltage Vgs Max:2V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Min:1V
The three parts on the right have similar specifications to FDS6680A.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminationECCN CodeResistanceTerminal FinishAdditional FeatureSubcategoryVoltage - Rated DCTechnologyTerminal PositionTerminal FormCurrent RatingNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageDual Supply VoltageRecovery TimeNominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSurface MountPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusConfigurationDrain to Source Voltage (Vdss)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxDS Breakdown Voltage-MinCase ConnectionPulsed Drain Current-Max (IDM)View Compare
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FDS6680AACTIVE (Last Updated: 1 day ago)18 WeeksTinSurface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8130mgSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®2004e4yesActive1 (Unlimited)8SMD/SMTEAR999.5MOhmNickel/Palladium/Gold (Ni/Pd/Au)LOGIC LEVEL COMPATIBLEFET General Purpose Power30VMOSFET (Metal Oxide)DUALGULL WING12.5A12.5W TaSingleENHANCEMENT MODE2.5W10 nsN-ChannelSWITCHING9.5m Ω @ 12.5A, 10V3V @ 250μA1620pF @ 15V12.5A Ta23nC @ 5V5ns4.5V 10V±20V15 ns27 ns12.5A2V20V30V30V28 ns2 V1.5mm5mm4mmNo SVHCNoROHS3 CompliantLead Free---------------
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----Surface Mount8-SOIC (0.154, 3.90mm Width)--SILICON-55°C~175°C TJTape & Reel (TR)PowerTrench®-e3yesObsolete1 (Unlimited)8---MATTE TIN---MOSFET (Metal Oxide)DUALGULL WING-12.5W Ta-ENHANCEMENT MODE--N-ChannelSWITCHING6m Ω @ 16A, 10V3V @ 250μA3.888pF @ 15V16A Ta56nC @ 5V-4.5V 10V±20V--------------ROHS3 Compliant-YES260unknownNOT SPECIFIED8R-PDSO-G8COMMERCIALSINGLE WITH BUILT-IN DIODE30V16A0.006Ohm30V--
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----Surface Mount8-SOIC (0.154, 3.90mm Width)--SILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®-e4yesObsolete1 (Unlimited)8---NICKEL PALLADIUM GOLD---MOSFET (Metal Oxide)DUALGULL WING-13W Ta-ENHANCEMENT MODE--N-ChannelSWITCHING3.5m Ω @ 23A, 4.5V1.5V @ 250μA5.521pF @ 10V23A Ta73nC @ 4.5V-2.5V 4.5V±12V--------------ROHS3 Compliant-YES260-NOT SPECIFIED8R-PDSO-G8COMMERCIALSINGLE WITH BUILT-IN DIODE20V23A0.0035Ohm20VDRAIN60A
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----Surface Mount8-SOIC (0.154, 3.90mm Width)--SILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®-e4yesObsolete1 (Unlimited)8---NICKEL PALLADIUM GOLD---MOSFET (Metal Oxide)DUALGULL WING-13W Ta-ENHANCEMENT MODE--N-ChannelSWITCHING3.5m Ω @ 23A, 4.5V1.5V @ 250μA7.191pF @ 10V23A Ta98nC @ 4.5V-1.8V 4.5V±8V--------------ROHS3 Compliant-YES260-NOT SPECIFIED8R-PDSO-G8COMMERCIALSINGLE WITH BUILT-IN DIODE20V23A0.0035Ohm20VDRAIN60A
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