Fairchild/ON Semiconductor FDS6630A
- Part Number:
- FDS6630A
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2478653-FDS6630A
- Description:
- MOSFET N-CH 30V 6.5A 8SOIC
- Datasheet:
- FDS6630A
Fairchild/ON Semiconductor FDS6630A technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDS6630A.
- Lifecycle StatusACTIVE (Last Updated: 1 day ago)
- Factory Lead Time18 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Number of Pins8
- Weight130mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesPowerTrench®
- Published1999
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations8
- ECCN CodeEAR99
- Resistance38mOhm
- Terminal FinishTin (Sn)
- Additional FeatureLOGIC LEVEL COMPATIBLE
- SubcategoryFET General Purpose Power
- Voltage - Rated DC30V
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Current Rating6.5A
- Number of Elements1
- Power Dissipation-Max2.5W Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation2.5W
- Turn On Delay Time5 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs38m Ω @ 6.5A, 10V
- Vgs(th) (Max) @ Id3V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds460pF @ 15V
- Current - Continuous Drain (Id) @ 25°C6.5A Ta
- Gate Charge (Qg) (Max) @ Vgs7nC @ 5V
- Rise Time8ns
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)13 ns
- Turn-Off Delay Time17 ns
- Continuous Drain Current (ID)6.5A
- Threshold Voltage1.7V
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage30V
- Dual Supply Voltage30V
- Nominal Vgs1.7 V
- Height1.575mm
- Length4.9mm
- Width3.9mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
FDS6630A Description
In order to reduce on-state resistance while maintaining exceptional switching performance, this N-Channel Logic Level MOSFET is made using the cutting-edge PowerTrench technology. Low in-line power loss and quick switching are required in low voltage and battery-powered applications, which are well suited for these devices.
FDS6630A Features
6.5 A, 30 V
RDS(on) = 0.038 Ω@ VGS = 10 V
RDS(on) = 0.053 Ω @ VGS = 4.5 V
Low gate charge (5nC typical)
Fast switching speed
High performance trench technology for extremely low RDS(ON)
High power and current handling capability
FDS6630A Applications
This product is general usage and suitable for many different applications.
DC/DC Converters
Load Switch
Motor Drives
In order to reduce on-state resistance while maintaining exceptional switching performance, this N-Channel Logic Level MOSFET is made using the cutting-edge PowerTrench technology. Low in-line power loss and quick switching are required in low voltage and battery-powered applications, which are well suited for these devices.
FDS6630A Features
6.5 A, 30 V
RDS(on) = 0.038 Ω@ VGS = 10 V
RDS(on) = 0.053 Ω @ VGS = 4.5 V
Low gate charge (5nC typical)
Fast switching speed
High performance trench technology for extremely low RDS(ON)
High power and current handling capability
FDS6630A Applications
This product is general usage and suitable for many different applications.
DC/DC Converters
Load Switch
Motor Drives
FDS6630A More Descriptions
N-Channel PowerTrenchTM MOSFET, Logic Level, 30V, 6.5A 38mΩ
N-Channel 30 V 38 mOhm Logic Level PowerTrench Mosfet - SOIC-8
Trans MOSFET N-CH 30V 6.5A 8-Pin SOIC T/R - Tape and Reel
MOSFET, N, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:6.5A; Source Voltage Vds:30V; On Resistance Rds(on):0.038ohm;
This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
MOSFET, N, SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 6.5A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.038ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.7V; Power Dissipation Pd: 2.5W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Current Id Max: 6.5A; Current Temperature: 25°C; Full Power Rating Temperature: 25°C; No. of Transistors: 1; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Pulse Current Idm: 40A; SMD Marking: FDS6630A; Voltage Vds: 30V; Voltage Vds Typ: 30V; Voltage Vgs Max: 1.7V; Voltage Vgs Rds on Measurement: 10V; Voltage Vgs th Max: 3V; Voltage Vgs th Min: 1V
N-Channel 30 V 38 mOhm Logic Level PowerTrench Mosfet - SOIC-8
Trans MOSFET N-CH 30V 6.5A 8-Pin SOIC T/R - Tape and Reel
MOSFET, N, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:6.5A; Source Voltage Vds:30V; On Resistance Rds(on):0.038ohm;
This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
MOSFET, N, SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 6.5A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.038ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.7V; Power Dissipation Pd: 2.5W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Current Id Max: 6.5A; Current Temperature: 25°C; Full Power Rating Temperature: 25°C; No. of Transistors: 1; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Pulse Current Idm: 40A; SMD Marking: FDS6630A; Voltage Vds: 30V; Voltage Vds Typ: 30V; Voltage Vgs Max: 1.7V; Voltage Vgs Rds on Measurement: 10V; Voltage Vgs th Max: 3V; Voltage Vgs th Min: 1V
The three parts on the right have similar specifications to FDS6630A.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceTerminal FinishAdditional FeatureSubcategoryVoltage - Rated DCTechnologyTerminal PositionTerminal FormCurrent RatingNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageDual Supply VoltageNominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeContact PlatingView Compare
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FDS6630AACTIVE (Last Updated: 1 day ago)18 WeeksSurface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8130mgSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®1999e3yesActive1 (Unlimited)8EAR9938mOhmTin (Sn)LOGIC LEVEL COMPATIBLEFET General Purpose Power30VMOSFET (Metal Oxide)DUALGULL WING6.5A12.5W TaSingleENHANCEMENT MODE2.5W5 nsN-ChannelSWITCHING38m Ω @ 6.5A, 10V3V @ 250μA460pF @ 15V6.5A Ta7nC @ 5V8ns4.5V 10V±20V13 ns17 ns6.5A1.7V20V30V30V1.7 V1.575mm4.9mm3.9mmNo SVHCNoROHS3 CompliantLead Free--
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----SO-8----Tape & Reel (TR)----------------------------------------------RoHS Compliant--
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ACTIVE (Last Updated: 1 day ago)18 WeeksSurface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8130mgSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®, SyncFET™2004e4yesActive1 (Unlimited)8EAR9912MOhmNickel/Palladium/Gold (Ni/Pd/Au)-FET General Purpose Power30VMOSFET (Metal Oxide)DUALGULL WING10A12.5W TaSingleENHANCEMENT MODE2.5W8 nsN-ChannelSWITCHING12m Ω @ 10A, 10V3V @ 1mA910pF @ 15V10A Ta23nC @ 10V5ns4.5V 10V±20V6 ns25 ns10A1.6V20V30V-1.6 V1.5mm5mm4mmNo SVHCNoROHS3 CompliantLead Free-
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ACTIVE (Last Updated: 1 day ago)18 WeeksSurface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8130mgSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®, SyncFET™2005e4yesActive1 (Unlimited)8EAR999MOhmNickel/Palladium/Gold (Ni/Pd/Au)--30VMOSFET (Metal Oxide)DUALGULL WING13.5A12.5W TaSingleENHANCEMENT MODE2.5W10 nsN-ChannelSWITCHING9m Ω @ 13.5A, 10V3V @ 1mA1540pF @ 15V13.5A Ta38nC @ 10V5ns4.5V 10V±20V18 ns27 ns13.5A-20V30V--1.5mm5mm4mm-NoROHS3 CompliantLead FreeTin
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