Fairchild/ON Semiconductor FDS6612A
- Part Number:
- FDS6612A
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2478578-FDS6612A
- Description:
- MOSFET N-CH 30V 8.4A 8-SOIC
- Datasheet:
- FDS6612A
Fairchild/ON Semiconductor FDS6612A technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDS6612A.
- Package / CaseSO-8
- PackagingTape & Reel (TR)
- RoHS StatusRoHS Compliant
FDS6612A Overview
This product is manufactured by Fairchild/ON Semiconductor and belongs to the category of Transistors - FETs, MOSFETs - Single. The images we provide are for reference only, for detailed product information please see specification sheet FDS6612A or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of FDS6612A. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Fairchild/ON Semiconductor and belongs to the category of Transistors - FETs, MOSFETs - Single. The images we provide are for reference only, for detailed product information please see specification sheet FDS6612A or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of FDS6612A. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
FDS6612A More Descriptions
N-Channel Power Trench® MOSFET, Logic Level, 30V, 8.4A, 22mΩ
N-Channel 30 V 22 mOhm Logic Level PowerTrench Mosfet - SOIC-8
Trans MOSFET N-CH 30V 8.4A 8-Pin SOIC N T/R - Tape and Reel
MOSFET, N, SMD, 8-SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:8.4A; Source Voltage Vds:30V; On Resistance
This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
N-Channel 30 V 22 mOhm Logic Level PowerTrench Mosfet - SOIC-8
Trans MOSFET N-CH 30V 8.4A 8-Pin SOIC N T/R - Tape and Reel
MOSFET, N, SMD, 8-SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:8.4A; Source Voltage Vds:30V; On Resistance
This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
The three parts on the right have similar specifications to FDS6612A.
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ImagePart NumberManufacturerPackage / CasePackagingRoHS StatusLifecycle StatusFactory Lead TimeContact PlatingMountMounting TypeNumber of PinsWeightTransistor Element MaterialOperating TemperatureSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceTerminal FinishSubcategoryVoltage - Rated DCTechnologyTerminal PositionTerminal FormCurrent RatingNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain to Source Breakdown VoltageDual Supply VoltageNominal VgsHeightLengthWidthREACH SVHCRadiation HardeningLead FreeView Compare
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FDS6612ASO-8Tape & Reel (TR)RoHS Compliant----------------------------------------------------------
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8-SOIC (0.154, 3.90mm Width)Tape & Reel (TR)ROHS3 CompliantACTIVE (Last Updated: 1 day ago)18 WeeksTinSurface MountSurface Mount8130mgSILICON-55°C~175°C TJPowerTrench®2001e4yesActive1 (Unlimited)8EAR9924MOhmNickel/Palladium/Gold (Ni/Pd/Au)Other Transistors-20VMOSFET (Metal Oxide)DUALGULL WING-8A12.5W TaSingleENHANCEMENT MODE2.5W12 nsP-ChannelSWITCHING24m Ω @ 8A, 4.5V1.5V @ 250μA2694pF @ 10V8A Ta36nC @ 4.5V9ns20V2.5V 4.5V±8V57 ns124 ns8A-700mV8V8A-20V-20V-700 mV1.5mm5mm4mmNo SVHCNoLead Free
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8-SOIC (0.154, 3.90mm Width)Tape & Reel (TR)ROHS3 CompliantACTIVE (Last Updated: 1 day ago)18 Weeks-Surface MountSurface Mount8130mgSILICON-55°C~150°C TJPowerTrench®, SyncFET™2004e4yesActive1 (Unlimited)8EAR9912MOhmNickel/Palladium/Gold (Ni/Pd/Au)FET General Purpose Power30VMOSFET (Metal Oxide)DUALGULL WING10A12.5W TaSingleENHANCEMENT MODE2.5W8 nsN-ChannelSWITCHING12m Ω @ 10A, 10V3V @ 1mA910pF @ 15V10A Ta23nC @ 10V5ns-4.5V 10V±20V6 ns25 ns10A1.6V20V-30V-1.6 V1.5mm5mm4mmNo SVHCNoLead Free
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8-SOIC (0.154, 3.90mm Width)Tape & Reel (TR)ROHS3 CompliantACTIVE (Last Updated: 1 day ago)18 WeeksTinSurface MountSurface Mount8130mgSILICON-55°C~150°C TJPowerTrench®, SyncFET™2005e4yesActive1 (Unlimited)8EAR999MOhmNickel/Palladium/Gold (Ni/Pd/Au)-30VMOSFET (Metal Oxide)DUALGULL WING13.5A12.5W TaSingleENHANCEMENT MODE2.5W10 nsN-ChannelSWITCHING9m Ω @ 13.5A, 10V3V @ 1mA1540pF @ 15V13.5A Ta38nC @ 10V5ns-4.5V 10V±20V18 ns27 ns13.5A-20V-30V--1.5mm5mm4mm-NoLead Free
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