Fairchild/ON Semiconductor FDS6298
- Part Number:
- FDS6298
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2478835-FDS6298
- Description:
- MOSFET N-CH 30V 13A 8-SOIC
- Datasheet:
- FDS6298
Fairchild/ON Semiconductor FDS6298 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDS6298.
- Lifecycle StatusACTIVE (Last Updated: 1 day ago)
- Factory Lead Time18 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Number of Pins8
- Weight130mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesPowerTrench®
- Published2007
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations8
- TerminationSMD/SMT
- ECCN CodeEAR99
- Resistance15MOhm
- Terminal FinishTin (Sn)
- Additional FeatureFAST SWITCHING
- SubcategoryFET General Purpose Power
- Voltage - Rated DC30V
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Current Rating13A
- Number of Elements1
- Power Dissipation-Max3W Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation3W
- Turn On Delay Time11 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs9m Ω @ 13A, 10V
- Vgs(th) (Max) @ Id3V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1108pF @ 15V
- Current - Continuous Drain (Id) @ 25°C13A Ta
- Gate Charge (Qg) (Max) @ Vgs14nC @ 5V
- Rise Time5ns
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)7 ns
- Turn-Off Delay Time27 ns
- Continuous Drain Current (ID)13A
- Threshold Voltage1.7V
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage30V
- Pulsed Drain Current-Max (IDM)50A
- Dual Supply Voltage30V
- Nominal Vgs1.7 V
- Height1.5mm
- Length5mm
- Width4mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
FDS6298 Description
FDS6298 developed by ON Semiconductor is a type of 30V N-Channel fast switching power trench MOSFET optimized for low gate charge, low RDS(ON) and fast switching speed. It is able to provide optimum performance for improving the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
FDS6298 Features
Low gate charge (10nC @ VGS=5V) Very low Miller Charge (3nC) Low Rg (1 Ohm) Low gate charge Low RDS(ON) Fast switching speed
FDS6298 Applications
Control switch for DC-DC buck converters Notebook Vcore Telecom / networking point of load
FDS6298 developed by ON Semiconductor is a type of 30V N-Channel fast switching power trench MOSFET optimized for low gate charge, low RDS(ON) and fast switching speed. It is able to provide optimum performance for improving the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
FDS6298 Features
Low gate charge (10nC @ VGS=5V) Very low Miller Charge (3nC) Low Rg (1 Ohm) Low gate charge Low RDS(ON) Fast switching speed
FDS6298 Applications
Control switch for DC-DC buck converters Notebook Vcore Telecom / networking point of load
FDS6298 More Descriptions
MOSFET N-CH 30V 13A 8-SOIC / Trans MOSFET N-CH 30V 13A 8-Pin SOIC T/R
N-Channel Fast Switching PowerTrench® MOSFET, 30V
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
MOSFET, N CH, 30V, 13A, 8SOIC; Transistor Polarity: N Channel; Continuous Drain Current Id: 13A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.009ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.7V; Power Dissipation Pd: 3W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Current Id Max: 13A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Termination Type: Surface Mount Device; Voltage Vds Typ: 30V; Voltage Vgs Max: 1.7V; Voltage Vgs Rds on Measurement: 10V
N-Channel Fast Switching PowerTrench® MOSFET, 30V
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
MOSFET, N CH, 30V, 13A, 8SOIC; Transistor Polarity: N Channel; Continuous Drain Current Id: 13A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.009ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.7V; Power Dissipation Pd: 3W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Current Id Max: 13A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Termination Type: Surface Mount Device; Voltage Vds Typ: 30V; Voltage Vgs Max: 1.7V; Voltage Vgs Rds on Measurement: 10V
The three parts on the right have similar specifications to FDS6298.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminationECCN CodeResistanceTerminal FinishAdditional FeatureSubcategoryVoltage - Rated DCTechnologyTerminal PositionTerminal FormCurrent RatingNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Dual Supply VoltageNominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSurface MountPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusConfigurationCase ConnectionDrain to Source Voltage (Vdss)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxDS Breakdown Voltage-MinView Compare
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FDS6298ACTIVE (Last Updated: 1 day ago)18 WeeksSurface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8130mgSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®2007e3yesActive1 (Unlimited)8SMD/SMTEAR9915MOhmTin (Sn)FAST SWITCHINGFET General Purpose Power30VMOSFET (Metal Oxide)DUALGULL WING13A13W TaSingleENHANCEMENT MODE3W11 nsN-ChannelSWITCHING9m Ω @ 13A, 10V3V @ 250μA1108pF @ 15V13A Ta14nC @ 5V5ns4.5V 10V±20V7 ns27 ns13A1.7V20V30V50A30V1.7 V1.5mm5mm4mmNo SVHCNoROHS3 CompliantLead Free--------------
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---Surface Mount8-SOIC (0.154, 3.90mm Width)--SILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®-e4yesObsolete1 (Unlimited)8---NICKEL PALLADIUM GOLD---MOSFET (Metal Oxide)DUALGULL WING-13W Ta-ENHANCEMENT MODE--N-ChannelSWITCHING4m Ω @ 23A, 4.5V1.5V @ 250μA7.191pF @ 10V23A Ta98nC @ 4.5V-1.8V 4.5V±8V--------------ROHS3 Compliant-YES260unknownNOT SPECIFIED8R-PDSO-G8COMMERCIALSINGLE WITH BUILT-IN DIODEDRAIN20V23A0.004Ohm20V
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---Surface Mount8-SOIC (0.154, 3.90mm Width)--SILICON-55°C~175°C TJTape & Reel (TR)PowerTrench®-e3yesObsolete1 (Unlimited)8---MATTE TIN---MOSFET (Metal Oxide)DUALGULL WING-12.5W Ta-ENHANCEMENT MODE--N-ChannelSWITCHING6m Ω @ 16A, 10V3V @ 1mA3.29pF @ 15V16A Ta78nC @ 10V-4.5V 10V±20V--------------ROHS3 Compliant-YES260-NOT SPECIFIED8R-PDSO-G8COMMERCIALSINGLE WITH BUILT-IN DIODE-30V16A0.006Ohm30V
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ACTIVE (Last Updated: 1 day ago)18 WeeksSurface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8130mgSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®, SyncFET™2004e4yesActive1 (Unlimited)8-EAR9912MOhmNickel/Palladium/Gold (Ni/Pd/Au)-FET General Purpose Power30VMOSFET (Metal Oxide)DUALGULL WING10A12.5W TaSingleENHANCEMENT MODE2.5W8 nsN-ChannelSWITCHING12m Ω @ 10A, 10V3V @ 1mA910pF @ 15V10A Ta23nC @ 10V5ns4.5V 10V±20V6 ns25 ns10A1.6V20V30V--1.6 V1.5mm5mm4mmNo SVHCNoROHS3 CompliantLead Free-------------
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