Fairchild/ON Semiconductor FDS6294
- Part Number:
- FDS6294
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2478623-FDS6294
- Description:
- MOSFET N-CH 30V 13A 8SOIC
- Datasheet:
- FDS6294
Fairchild/ON Semiconductor FDS6294 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDS6294.
- Lifecycle StatusACTIVE (Last Updated: 1 day ago)
- Factory Lead Time18 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Number of Pins8
- Weight130mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTape & Reel (TR)
- SeriesPowerTrench®
- Published2007
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations8
- TerminationSMD/SMT
- ECCN CodeEAR99
- Resistance11.3MOhm
- Terminal FinishTin (Sn)
- SubcategoryFET General Purpose Power
- Voltage - Rated DC30V
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Current Rating13A
- Number of Elements1
- Power Dissipation-Max3W Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation3W
- Turn On Delay Time9 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs11.3m Ω @ 13A, 10V
- Vgs(th) (Max) @ Id3V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1205pF @ 15V
- Current - Continuous Drain (Id) @ 25°C13A Ta
- Gate Charge (Qg) (Max) @ Vgs14nC @ 5V
- Rise Time4ns
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)6 ns
- Turn-Off Delay Time24 ns
- Continuous Drain Current (ID)13A
- Threshold Voltage1.8V
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage30V
- Pulsed Drain Current-Max (IDM)50A
- Dual Supply Voltage30V
- Nominal Vgs1.8 V
- Height1.5mm
- Length5mm
- Width4mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
FDS6294 Description
This N-Channel MOSFET was created with the goal of increasing the overall efficiency of DC/DC converters using synchronous or traditional switching PWM controllers. It was designed with a low gate charge, a low RDS(ON), and a quick switching speed in mind.
FDS6294 Features
13A, 30V
RDS(ON) = 11.3 mΩ @ VGS = 10V
RDS(ON) = 14.4 mΩ @ VGS = 4.5V
Low gate charge (10 nC typical)
High performance trench technology for extremely low RDS(ON)
High power and current handling capability
FDS6294 Applications
This product is general usage and suitable for many different applications.
DC/DC Converters
Power Management
Load Switch
This N-Channel MOSFET was created with the goal of increasing the overall efficiency of DC/DC converters using synchronous or traditional switching PWM controllers. It was designed with a low gate charge, a low RDS(ON), and a quick switching speed in mind.
FDS6294 Features
13A, 30V
RDS(ON) = 11.3 mΩ @ VGS = 10V
RDS(ON) = 14.4 mΩ @ VGS = 4.5V
Low gate charge (10 nC typical)
High performance trench technology for extremely low RDS(ON)
High power and current handling capability
FDS6294 Applications
This product is general usage and suitable for many different applications.
DC/DC Converters
Power Management
Load Switch
FDS6294 More Descriptions
N-Channel Fast Switching PowerTrench® MOSFET, 30V, 13A, 11.3mΩ
Trans MOSFET N-CH 30V 13A 8-Pin SOIC N T/R
MOSFET, N; Transistor Polarity:N Channel; Continuous Drain Current Id:13A; Drain Source Voltage Vds:30V; On Resistance Rds(on):11.3mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:3W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (19-Dec-2011); Current Id Max:13A; Package / Case:SOIC-8; Power Dissipation Pd:3W; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:1.8V; Voltage Vgs Rds on Measurement:10V
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
Trans MOSFET N-CH 30V 13A 8-Pin SOIC N T/R
MOSFET, N; Transistor Polarity:N Channel; Continuous Drain Current Id:13A; Drain Source Voltage Vds:30V; On Resistance Rds(on):11.3mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:3W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (19-Dec-2011); Current Id Max:13A; Package / Case:SOIC-8; Power Dissipation Pd:3W; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:1.8V; Voltage Vgs Rds on Measurement:10V
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
The three parts on the right have similar specifications to FDS6294.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminationECCN CodeResistanceTerminal FinishSubcategoryVoltage - Rated DCTechnologyTerminal PositionTerminal FormCurrent RatingNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Dual Supply VoltageNominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSurface MountPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusConfigurationDrain to Source Voltage (Vdss)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxDS Breakdown Voltage-MinView Compare
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FDS6294ACTIVE (Last Updated: 1 day ago)18 WeeksSurface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8130mgSILICON-55°C~175°C TJTape & Reel (TR)PowerTrench®2007e3yesActive1 (Unlimited)8SMD/SMTEAR9911.3MOhmTin (Sn)FET General Purpose Power30VMOSFET (Metal Oxide)DUALGULL WING13A13W TaSingleENHANCEMENT MODE3W9 nsN-ChannelSWITCHING11.3m Ω @ 13A, 10V3V @ 250μA1205pF @ 15V13A Ta14nC @ 5V4ns4.5V 10V±20V6 ns24 ns13A1.8V20V30V50A30V1.8 V1.5mm5mm4mmNo SVHCNoROHS3 CompliantLead Free------------
-
---Surface Mount8-SOIC (0.154, 3.90mm Width)--SILICON-55°C~175°C TJTape & Reel (TR)PowerTrench®-e3yesObsolete1 (Unlimited)8---MATTE TIN--MOSFET (Metal Oxide)DUALGULL WING-12.5W Ta-ENHANCEMENT MODE--N-ChannelSWITCHING6m Ω @ 16A, 10V3V @ 1mA3.29pF @ 15V16A Ta78nC @ 10V-4.5V 10V±20V--------------ROHS3 Compliant-YES260NOT SPECIFIED8R-PDSO-G8COMMERCIALSINGLE WITH BUILT-IN DIODE30V16A0.006Ohm30V
-
----SO-8----Tape & Reel (TR)-----------------------------------------------RoHS Compliant------------
-
ACTIVE (Last Updated: 1 day ago)18 WeeksSurface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8130mgSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®, SyncFET™2004e4yesActive1 (Unlimited)8-EAR9912MOhmNickel/Palladium/Gold (Ni/Pd/Au)FET General Purpose Power30VMOSFET (Metal Oxide)DUALGULL WING10A12.5W TaSingleENHANCEMENT MODE2.5W8 nsN-ChannelSWITCHING12m Ω @ 10A, 10V3V @ 1mA910pF @ 15V10A Ta23nC @ 10V5ns4.5V 10V±20V6 ns25 ns10A1.6V20V30V--1.6 V1.5mm5mm4mmNo SVHCNoROHS3 CompliantLead Free-----------
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