Fairchild/ON Semiconductor FDMS8692
- Part Number:
- FDMS8692
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2852565-FDMS8692
- Description:
- MOSFET N-CH 30V 12A POWER56
- Datasheet:
- FDMS8692
Fairchild/ON Semiconductor FDMS8692 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDMS8692.
- Mounting TypeSurface Mount
- Package / Case8-PowerTDFN
- Surface MountYES
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesPowerTrench®
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations5
- Terminal FinishNOT SPECIFIED
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormFLAT
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Reach Compliance Codeunknown
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count8
- JESD-30 CodeR-PDSO-F5
- Qualification StatusCOMMERCIAL
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max2.5W Ta 41W Tc
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs9m Ω @ 12A, 10V
- Vgs(th) (Max) @ Id3V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1.265pF @ 15V
- Current - Continuous Drain (Id) @ 25°C12A Ta 28A Tc
- Gate Charge (Qg) (Max) @ Vgs21nC @ 10V
- Drain to Source Voltage (Vdss)30V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Drain Current-Max (Abs) (ID)12A
- Drain-source On Resistance-Max0.009Ohm
- Pulsed Drain Current-Max (IDM)120A
- DS Breakdown Voltage-Min30V
- Avalanche Energy Rating (Eas)72 mJ
- RoHS StatusROHS3 Compliant
FDMS8692 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 72 mJ.A device's maximum input capacitance is 1.265pF @ 15V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its drain current is 12A, and it is the maximum continuous current the device can conduct.Its maximum pulsed drain current is 120A, which is also its maximum rating peak drainage current.For normal operation, maintain the DS breakdown voltage above 30V.To operate this transistor, you need to apply a 30V drain to source voltage (Vdss).This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.
FDMS8692 Features
the avalanche energy rating (Eas) is 72 mJ
based on its rated peak drain current 120A.
a 30V drain to source voltage (Vdss)
FDMS8692 Applications
There are a lot of Rochester Electronics, LLC
FDMS8692 applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 72 mJ.A device's maximum input capacitance is 1.265pF @ 15V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its drain current is 12A, and it is the maximum continuous current the device can conduct.Its maximum pulsed drain current is 120A, which is also its maximum rating peak drainage current.For normal operation, maintain the DS breakdown voltage above 30V.To operate this transistor, you need to apply a 30V drain to source voltage (Vdss).This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.
FDMS8692 Features
the avalanche energy rating (Eas) is 72 mJ
based on its rated peak drain current 120A.
a 30V drain to source voltage (Vdss)
FDMS8692 Applications
There are a lot of Rochester Electronics, LLC
FDMS8692 applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
FDMS8692 More Descriptions
TAPE REEL 30V, 28A, 9.0M OHM,NCH, POWER TRENCH MOSFET
Trans MOSFET N-CH 30V 12A 8-Pin Power 56 T/R - Bulk
N-Channel PowerTrenchR MOSFET 30V 28A 9.0mΩPower-56 RoHS
The FDMS8692 has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.
Trans MOSFET N-CH 30V 12A 8-Pin Power 56 T/R - Bulk
N-Channel PowerTrenchR MOSFET 30V 28A 9.0mΩPower-56 RoHS
The FDMS8692 has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.
The three parts on the right have similar specifications to FDMS8692.
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ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingSeriesPbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationPower Dissipation-MaxOperating ModeCase ConnectionFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)RoHS StatusLifecycle StatusFactory Lead TimeMountNumber of PinsWeightPublishedJESD-609 CodeECCN CodeResistanceSubcategoryElement ConfigurationPower DissipationTurn On Delay TimeRise TimeFall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageJEDEC-95 CodeGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageNominal VgsHeightLengthWidthREACH SVHCRadiation HardeningLead FreeContact PlatingView Compare
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FDMS8692Surface Mount8-PowerTDFNYESSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®yesObsolete1 (Unlimited)5NOT SPECIFIEDMOSFET (Metal Oxide)DUALFLATNOT SPECIFIEDunknownNOT SPECIFIED8R-PDSO-F5COMMERCIAL1SINGLE WITH BUILT-IN DIODE2.5W Ta 41W TcENHANCEMENT MODEDRAINN-ChannelSWITCHING9m Ω @ 12A, 10V3V @ 250μA1.265pF @ 15V12A Ta 28A Tc21nC @ 10V30V4.5V 10V±20V12A0.009Ohm120A30V72 mJROHS3 Compliant------------------------------
-
Surface Mount8-PowerTDFN-SILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®yesActive1 (Unlimited)5Tin (Sn)MOSFET (Metal Oxide)DUAL-----R-PDSO-N5-1-2.5W Ta 78W TcENHANCEMENT MODEDRAINN-ChannelSWITCHING2.8m Ω @ 25A, 10V3V @ 250μA5565pF @ 15V25A Ta 42A Tc84nC @ 10V-4.5V 10V±20V-----ROHS3 CompliantACTIVE (Last Updated: 2 days ago)18 WeeksSurface Mount868.1mg2007e3EAR992.8MOhmFET General Purpose PowerSingle2.5W17 ns9ns7 ns37 ns25A1.9VMO-240AA20V30V1.9 V1.05mm5mm6mmNo SVHCNoLead Free-
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Surface Mount8-PowerTDFN-SILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®yesActive1 (Unlimited)5Tin (Sn)MOSFET (Metal Oxide)DUALFLAT----R-PDSO-F5-1-2.5W Ta 96W TcENHANCEMENT MODEDRAINN-ChannelSWITCHING4.8m Ω @ 17A, 10V4.5V @ 250μA6290pF @ 40V17A Ta 50A Tc95nC @ 10V-8V 10V±20V50A----ROHS3 CompliantACTIVE (Last Updated: 2 days ago)13 WeeksSurface Mount868.1mg-e3EAR99-FET General Purpose PowerSingle96W28 ns23ns9 ns35 ns17A-MO-240AA20V80V-1.05mm5.1mm5.85mm-NoLead Free-
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Surface Mount8-PowerTDFN-SILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®, SyncFET™yesActive1 (Unlimited)5-MOSFET (Metal Oxide)DUALFLATNOT SPECIFIEDnot_compliantNOT SPECIFIED-R-PDSO-F5-1-2.5W Ta 36W TcENHANCEMENT MODEDRAINN-ChannelSWITCHING5m Ω @ 18A, 10V3V @ 1mA1815pF @ 15V18A Ta 22A Tc31nC @ 10V-4.5V 10V±20V22A0.005Ohm100A-33 mJROHS3 CompliantACTIVE (Last Updated: 2 days ago)26 WeeksSurface Mount874mg-e3EAR99-FET General Purpose PowerSingle-10 ns2.3ns6 ns25 ns18A-MO-240AA20V30V-1mm6mm5mm---Tin
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