FDMS8692

Fairchild/ON Semiconductor FDMS8692

Part Number:
FDMS8692
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2852565-FDMS8692
Description:
MOSFET N-CH 30V 12A POWER56
ECAD Model:
Datasheet:
FDMS8692

Quick Request Quote

Please send RFQ , We will respond immediately.

Part Number
Quantity
Company
E-mail
Phone
Comments
Specifications
Fairchild/ON Semiconductor FDMS8692 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDMS8692.
  • Mounting Type
    Surface Mount
  • Package / Case
    8-PowerTDFN
  • Surface Mount
    YES
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    PowerTrench®
  • Pbfree Code
    yes
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    5
  • Terminal Finish
    NOT SPECIFIED
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    FLAT
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Reach Compliance Code
    unknown
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Pin Count
    8
  • JESD-30 Code
    R-PDSO-F5
  • Qualification Status
    COMMERCIAL
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Power Dissipation-Max
    2.5W Ta 41W Tc
  • Operating Mode
    ENHANCEMENT MODE
  • Case Connection
    DRAIN
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    9m Ω @ 12A, 10V
  • Vgs(th) (Max) @ Id
    3V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1.265pF @ 15V
  • Current - Continuous Drain (Id) @ 25°C
    12A Ta 28A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    21nC @ 10V
  • Drain to Source Voltage (Vdss)
    30V
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Drain Current-Max (Abs) (ID)
    12A
  • Drain-source On Resistance-Max
    0.009Ohm
  • Pulsed Drain Current-Max (IDM)
    120A
  • DS Breakdown Voltage-Min
    30V
  • Avalanche Energy Rating (Eas)
    72 mJ
  • RoHS Status
    ROHS3 Compliant
Description
FDMS8692 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 72 mJ.A device's maximum input capacitance is 1.265pF @ 15V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its drain current is 12A, and it is the maximum continuous current the device can conduct.Its maximum pulsed drain current is 120A, which is also its maximum rating peak drainage current.For normal operation, maintain the DS breakdown voltage above 30V.To operate this transistor, you need to apply a 30V drain to source voltage (Vdss).This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.

FDMS8692 Features
the avalanche energy rating (Eas) is 72 mJ
based on its rated peak drain current 120A.
a 30V drain to source voltage (Vdss)


FDMS8692 Applications
There are a lot of Rochester Electronics, LLC
FDMS8692 applications of single MOSFETs transistors.


Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
FDMS8692 More Descriptions
TAPE REEL 30V, 28A, 9.0M OHM,NCH, POWER TRENCH MOSFET
Trans MOSFET N-CH 30V 12A 8-Pin Power 56 T/R - Bulk
N-Channel PowerTrenchR MOSFET 30V 28A 9.0mΩPower-56 RoHS
The FDMS8692 has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.
Product Comparison
The three parts on the right have similar specifications to FDMS8692.
  • Image
    Part Number
    Manufacturer
    Mounting Type
    Package / Case
    Surface Mount
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Terminal Finish
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    JESD-30 Code
    Qualification Status
    Number of Elements
    Configuration
    Power Dissipation-Max
    Operating Mode
    Case Connection
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    RoHS Status
    Lifecycle Status
    Factory Lead Time
    Mount
    Number of Pins
    Weight
    Published
    JESD-609 Code
    ECCN Code
    Resistance
    Subcategory
    Element Configuration
    Power Dissipation
    Turn On Delay Time
    Rise Time
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    Lead Free
    Contact Plating
    View Compare
  • FDMS8692
    FDMS8692
    Surface Mount
    8-PowerTDFN
    YES
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    yes
    Obsolete
    1 (Unlimited)
    5
    NOT SPECIFIED
    MOSFET (Metal Oxide)
    DUAL
    FLAT
    NOT SPECIFIED
    unknown
    NOT SPECIFIED
    8
    R-PDSO-F5
    COMMERCIAL
    1
    SINGLE WITH BUILT-IN DIODE
    2.5W Ta 41W Tc
    ENHANCEMENT MODE
    DRAIN
    N-Channel
    SWITCHING
    9m Ω @ 12A, 10V
    3V @ 250μA
    1.265pF @ 15V
    12A Ta 28A Tc
    21nC @ 10V
    30V
    4.5V 10V
    ±20V
    12A
    0.009Ohm
    120A
    30V
    72 mJ
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • FDMS7660
    Surface Mount
    8-PowerTDFN
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    yes
    Active
    1 (Unlimited)
    5
    Tin (Sn)
    MOSFET (Metal Oxide)
    DUAL
    -
    -
    -
    -
    -
    R-PDSO-N5
    -
    1
    -
    2.5W Ta 78W Tc
    ENHANCEMENT MODE
    DRAIN
    N-Channel
    SWITCHING
    2.8m Ω @ 25A, 10V
    3V @ 250μA
    5565pF @ 15V
    25A Ta 42A Tc
    84nC @ 10V
    -
    4.5V 10V
    ±20V
    -
    -
    -
    -
    -
    ROHS3 Compliant
    ACTIVE (Last Updated: 2 days ago)
    18 Weeks
    Surface Mount
    8
    68.1mg
    2007
    e3
    EAR99
    2.8MOhm
    FET General Purpose Power
    Single
    2.5W
    17 ns
    9ns
    7 ns
    37 ns
    25A
    1.9V
    MO-240AA
    20V
    30V
    1.9 V
    1.05mm
    5mm
    6mm
    No SVHC
    No
    Lead Free
    -
  • FDMS86310
    Surface Mount
    8-PowerTDFN
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    yes
    Active
    1 (Unlimited)
    5
    Tin (Sn)
    MOSFET (Metal Oxide)
    DUAL
    FLAT
    -
    -
    -
    -
    R-PDSO-F5
    -
    1
    -
    2.5W Ta 96W Tc
    ENHANCEMENT MODE
    DRAIN
    N-Channel
    SWITCHING
    4.8m Ω @ 17A, 10V
    4.5V @ 250μA
    6290pF @ 40V
    17A Ta 50A Tc
    95nC @ 10V
    -
    8V 10V
    ±20V
    50A
    -
    -
    -
    -
    ROHS3 Compliant
    ACTIVE (Last Updated: 2 days ago)
    13 Weeks
    Surface Mount
    8
    68.1mg
    -
    e3
    EAR99
    -
    FET General Purpose Power
    Single
    96W
    28 ns
    23ns
    9 ns
    35 ns
    17A
    -
    MO-240AA
    20V
    80V
    -
    1.05mm
    5.1mm
    5.85mm
    -
    No
    Lead Free
    -
  • FDMS0312AS
    Surface Mount
    8-PowerTDFN
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®, SyncFET™
    yes
    Active
    1 (Unlimited)
    5
    -
    MOSFET (Metal Oxide)
    DUAL
    FLAT
    NOT SPECIFIED
    not_compliant
    NOT SPECIFIED
    -
    R-PDSO-F5
    -
    1
    -
    2.5W Ta 36W Tc
    ENHANCEMENT MODE
    DRAIN
    N-Channel
    SWITCHING
    5m Ω @ 18A, 10V
    3V @ 1mA
    1815pF @ 15V
    18A Ta 22A Tc
    31nC @ 10V
    -
    4.5V 10V
    ±20V
    22A
    0.005Ohm
    100A
    -
    33 mJ
    ROHS3 Compliant
    ACTIVE (Last Updated: 2 days ago)
    26 Weeks
    Surface Mount
    8
    74mg
    -
    e3
    EAR99
    -
    FET General Purpose Power
    Single
    -
    10 ns
    2.3ns
    6 ns
    25 ns
    18A
    -
    MO-240AA
    20V
    30V
    -
    1mm
    6mm
    5mm
    -
    -
    -
    Tin
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

Latest News

  • cost

    Help you to save your cost and time.

  • package

    Reliable package for your goods.

  • fast

    Fast Reliable Delivery to save time.

  • service

    Quality premium after-sale service.