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FDMS8680

Fairchild/ON Semiconductor FDMS8680

Part Number:
FDMS8680
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2478789-FDMS8680
Description:
MOSFET N-CH 30V 14A POWER56
ECAD Model:
Datasheet:
FDMS8680

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Specifications
Fairchild/ON Semiconductor FDMS8680 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDMS8680.
  • Lifecycle Status
    ACTIVE (Last Updated: 4 days ago)
  • Factory Lead Time
    18 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-PowerTDFN
  • Number of Pins
    8
  • Weight
    68.1mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    PowerTrench®
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    5
  • ECCN Code
    EAR99
  • Resistance
    7MOhm
  • Terminal Finish
    Tin (Sn)
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    FLAT
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Reach Compliance Code
    not_compliant
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • JESD-30 Code
    R-PDSO-F5
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Power Dissipation-Max
    2.5W Ta 50W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    2.5W
  • Case Connection
    DRAIN
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    7m Ω @ 14A, 10V
  • Vgs(th) (Max) @ Id
    3V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1590pF @ 15V
  • Current - Continuous Drain (Id) @ 25°C
    14A Ta 35A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    26nC @ 10V
  • Rise Time
    3ns
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    2 ns
  • Turn-Off Delay Time
    21 ns
  • Continuous Drain Current (ID)
    14A
  • Gate to Source Voltage (Vgs)
    20V
  • Drain Current-Max (Abs) (ID)
    63A
  • Drain to Source Breakdown Voltage
    30V
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
FDMS8680   Description
 FDMS8680 is designed to minimize loss in power conversion applications. Silicon and advances in packaging technology combine to provide the lowest RDS (ON) while maintaining excellent switching performance.
FDMS8680    Features   Max rDS(on) = 7.0 mΩ at VGS = 10 V, ID = 14 A Max rDS(on) = 11.0 mΩ at VGS = 4.5 V, ID = 11.5 A Advanced Package and Silicon combination for low rDS(on) and high efficiency MSL1 robust package design RoHS compliant   FDMS8680    Applications   This product is general usage and suitable for many different applications. Low Side for Synchronous Buck to Power Core Processor Secondary Side Synchronous Rectifier Low Side Switch in POL DC/DC Converter Oring FET / Load Switch
FDMS8680 More Descriptions
N-Channel PowerTrench® MOSFET 30V, 35A, 7.0mΩ
Mosfet, N-Ch, 30V, 35A, Power 56-8; Transistor Polarity:N Channel; Continuous Drain Current Id:35A; Drain Source Voltage Vds:30V; On Resistance Rds(On):0.0055Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.8V; Power Rohs Compliant: Yes |Onsemi FDMS8680
The FDMS8680 has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.
Product Comparison
The three parts on the right have similar specifications to FDMS8680.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Terminal Finish
    Subcategory
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Qualification Status
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain Current-Max (Abs) (ID)
    Drain to Source Breakdown Voltage
    RoHS Status
    Lead Free
    Published
    Turn On Delay Time
    Threshold Voltage
    JEDEC-95 Code
    Pulsed Drain Current-Max (IDM)
    Avalanche Energy Rating (Eas)
    FET Feature
    REACH SVHC
    Radiation Hardening
    Height
    Length
    Width
    Contact Plating
    Drain-source On Resistance-Max
    View Compare
  • FDMS8680
    FDMS8680
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 4 days ago)
    18 Weeks
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    68.1mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    e3
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    7MOhm
    Tin (Sn)
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    FLAT
    NOT SPECIFIED
    not_compliant
    NOT SPECIFIED
    R-PDSO-F5
    Not Qualified
    1
    2.5W Ta 50W Tc
    Single
    ENHANCEMENT MODE
    2.5W
    DRAIN
    N-Channel
    SWITCHING
    7m Ω @ 14A, 10V
    3V @ 250μA
    1590pF @ 15V
    14A Ta 35A Tc
    26nC @ 10V
    3ns
    4.5V 10V
    ±20V
    2 ns
    21 ns
    14A
    20V
    63A
    30V
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • FDMS8570SDC
    FDMS8570SDC
    Fairchild/ON Semiconductor
    LAST SHIPMENTS (Last Updated: 1 week ago)
    -
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    90mg
    SILICON
    -55°C~150°C TJ
    Digi-Reel®
    PowerTrench®, SyncFET™
    e3
    yes
    Obsolete
    1 (Unlimited)
    5
    EAR99
    -
    Tin (Sn)
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    FLAT
    -
    -
    -
    R-PDSO-F5
    -
    1
    3.3W Ta 59W Tc
    Single
    ENHANCEMENT MODE
    59W
    DRAIN
    N-Channel
    SWITCHING
    2.8m Ω @ 28A, 10V
    2.2V @ 1mA
    2825pF @ 13V
    28A Ta 60A Tc
    42nC @ 10V
    4ns
    4.5V 10V
    ±12V
    3 ns
    33 ns
    60A
    12V
    -
    25V
    RoHS Compliant
    -
    2017
    11 ns
    1.5V
    MO-240AA
    100A
    45 mJ
    Schottky Diode (Body)
    No SVHC
    No
    -
    -
    -
    -
    -
    FDMS8680 vs FDMS8570SDC
  • FDMS86310
    FDMS86310
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 2 days ago)
    13 Weeks
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    68.1mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    e3
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    -
    Tin (Sn)
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    FLAT
    -
    -
    -
    R-PDSO-F5
    -
    1
    2.5W Ta 96W Tc
    Single
    ENHANCEMENT MODE
    96W
    DRAIN
    N-Channel
    SWITCHING
    4.8m Ω @ 17A, 10V
    4.5V @ 250μA
    6290pF @ 40V
    17A Ta 50A Tc
    95nC @ 10V
    23ns
    8V 10V
    ±20V
    9 ns
    35 ns
    17A
    20V
    50A
    80V
    ROHS3 Compliant
    Lead Free
    -
    28 ns
    -
    MO-240AA
    -
    -
    -
    -
    No
    1.05mm
    5.1mm
    5.85mm
    -
    -
    FDMS8680 vs FDMS86310
  • FDMS0312AS
    FDMS0312AS
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 2 days ago)
    26 Weeks
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    74mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®, SyncFET™
    e3
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    -
    -
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    FLAT
    NOT SPECIFIED
    not_compliant
    NOT SPECIFIED
    R-PDSO-F5
    -
    1
    2.5W Ta 36W Tc
    Single
    ENHANCEMENT MODE
    -
    DRAIN
    N-Channel
    SWITCHING
    5m Ω @ 18A, 10V
    3V @ 1mA
    1815pF @ 15V
    18A Ta 22A Tc
    31nC @ 10V
    2.3ns
    4.5V 10V
    ±20V
    6 ns
    25 ns
    18A
    20V
    22A
    30V
    ROHS3 Compliant
    -
    -
    10 ns
    -
    MO-240AA
    100A
    33 mJ
    -
    -
    -
    1mm
    6mm
    5mm
    Tin
    0.005Ohm
    FDMS8680 vs FDMS0312AS
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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