Fairchild/ON Semiconductor FDMS8672AS

Name: FDMS8672AS
Brand: Fairchild/ON Semiconductor
SKU: 2852547-FDMS8672AS
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FDMS8672AS

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2852547-FDMS8672AS

Description:: MOSFET N-CH 30V 18A POWER56

ECAD Model:

Datasheet:: FDMS8672AS

Specifications

Fairchild/ON Semiconductor FDMS8672AS technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDMS8672AS.

Mounting Type
Surface Mount
Package / Case
8-PowerTDFN
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
PowerTrench®
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
5
Terminal Finish
NOT SPECIFIED
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
NO LEAD
Reach Compliance Code
unknown
Pin Count
8
JESD-30 Code
R-PDSO-N5
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
2.5W Ta 70W Tc
Operating Mode
ENHANCEMENT MODE
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
5m Ω @ 18A, 10V
Vgs(th) (Max) @ Id
3V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds
2.6pF @ 15V
Current - Continuous Drain (Id) @ 25°C
18A Ta 28A Tc
Gate Charge (Qg) (Max) @ Vgs
40nC @ 10V
Drain to Source Voltage (Vdss)
30V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Drain Current-Max (Abs) (ID)
18A
Drain-source On Resistance-Max
0.005Ohm
Pulsed Drain Current-Max (IDM)
200A
DS Breakdown Voltage-Min
30V
Avalanche Energy Rating (Eas)
253 mJ
RoHS Status
ROHS3 Compliant

Description

FDMS8672AS Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 253 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 2.6pF @ 15V.There is no drain current on this device since the maximum continuous current it can conduct is 18A.There is a peak drain current of 200A, its maximum pulsed drain current.In order for DS breakdown voltage to remain above 30V, it should remain above the 30V level.The transistor must receive a 30V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).

FDMS8672AS Features
the avalanche energy rating (Eas) is 253 mJ
based on its rated peak drain current 200A.
a 30V drain to source voltage (Vdss)

FDMS8672AS Applications
There are a lot of Rochester Electronics, LLC
FDMS8672AS applications of single MOSFETs transistors.

DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.

FDMS8672AS More Descriptions

MOSFET N-Channel PowerTrenchR SyncFETTM 30V 28A 5.0mΩ Power-56-8
Trans MOSFET N-CH 30V 28A 8-Pin Power 56 T/R - Bulk
30V N-Channel PowerTrench® SyncFET
The FDMS8672AS has been designed to minimize losses inpower conversion application. Advancements in both silicon andpackage technologies have been combined to offer the lowestrDS(on) while maintaining excellent switching performance. Thisdevice has the added benefit of an efficient monolithic Schottkybody diode.

Product Comparison

The three parts on the right have similar specifications to FDMS8672AS.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Surface Mount

Transistor Element Material

Operating Temperature

Packaging

Series

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Terminal Finish

Technology

Terminal Position

Terminal Form

Reach Compliance Code

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

RoHS Status

Lifecycle Status

Factory Lead Time

Mount

Number of Pins

Weight

Published

JESD-609 Code

Pbfree Code

ECCN Code

Resistance

Subcategory

Element Configuration

Power Dissipation

Case Connection

Turn On Delay Time

Rise Time

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

Lead Free

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Number of Channels

FET Feature

View Compare
FDMS8672AS

Fairchild/ON Semiconductor

Surface Mount

8-PowerTDFN

YES

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®

Obsolete

1 (Unlimited)

5

NOT SPECIFIED

MOSFET (Metal Oxide)

DUAL

NO LEAD

unknown

8

R-PDSO-N5

COMMERCIAL

1

SINGLE WITH BUILT-IN DIODE

2.5W Ta 70W Tc

ENHANCEMENT MODE

N-Channel

SWITCHING

5m Ω @ 18A, 10V

3V @ 1mA

2.6pF @ 15V

18A Ta 28A Tc

40nC @ 10V

30V

4.5V 10V

±20V

18A

0.005Ohm

200A

30V

253 mJ

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
FDMS7660

Fairchild/ON Semiconductor

Surface Mount

8-PowerTDFN

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®

Active

1 (Unlimited)

5

Tin (Sn)

MOSFET (Metal Oxide)

DUAL

-

-

-

R-PDSO-N5

-

1

-

2.5W Ta 78W Tc

ENHANCEMENT MODE

N-Channel

SWITCHING

2.8m Ω @ 25A, 10V

3V @ 250μA

5565pF @ 15V

25A Ta 42A Tc

84nC @ 10V

-

4.5V 10V

±20V

-

-

-

-

-

ROHS3 Compliant

ACTIVE (Last Updated: 2 days ago)

18 Weeks

Surface Mount

8

68.1mg

2007

e3

yes

EAR99

2.8MOhm

FET General Purpose Power

Single

2.5W

DRAIN

17 ns

9ns

7 ns

37 ns

25A

1.9V

MO-240AA

20V

30V

1.9 V

1.05mm

5mm

6mm

No SVHC

No

Lead Free

-

-

-

-

FDMS8672AS vs FDMS7660
FDMS86550ET60

Fairchild/ON Semiconductor

Surface Mount

8-PowerTDFN

-

-

-55°C~175°C TJ

Tape & Reel (TR)

PowerTrench®

Active

1 (Unlimited)

-

Tin (Sn)

MOSFET (Metal Oxide)

-

-

not_compliant

-

-

-

-

-

3.3W Ta 187W Tc

-

N-Channel

-

1.65m Ω @ 32A, 10V

4.5V @ 250μA

8235pF @ 30V

32A Ta 245A Tc

154nC @ 10V

-

8V 10V

±20V

-

-

-

-

-

ROHS3 Compliant

ACTIVE (Last Updated: 3 days ago)

12 Weeks

Surface Mount

8

56.5mg

-

e3

yes

EAR99

-

-

Single

-

-

43 ns

27ns

11 ns

42 ns

245A

-

-

20V

60V

-

-

-

-

-

-

Lead Free

260

NOT SPECIFIED

1

-

FDMS8672AS vs FDMS86550ET60
FDMS8570SDC

Fairchild/ON Semiconductor

Surface Mount

8-PowerTDFN

-

SILICON

-55°C~150°C TJ

Digi-Reel®

PowerTrench®, SyncFET™

Obsolete

1 (Unlimited)

5

Tin (Sn)

MOSFET (Metal Oxide)

DUAL

FLAT

-

-

R-PDSO-F5

-

1

-

3.3W Ta 59W Tc

ENHANCEMENT MODE

N-Channel

SWITCHING

2.8m Ω @ 28A, 10V

2.2V @ 1mA

2825pF @ 13V

28A Ta 60A Tc

42nC @ 10V

-

4.5V 10V

±12V

-

-

100A

-

45 mJ

RoHS Compliant

LAST SHIPMENTS (Last Updated: 1 week ago)

-

Surface Mount

8

90mg

2017

e3

yes

EAR99

-

FET General Purpose Power

Single

59W

DRAIN

11 ns

4ns

3 ns

33 ns

60A

1.5V

MO-240AA

12V

25V

-

-

-

-

No SVHC

No

-

-

-

-

Schottky Diode (Body)

FDMS8672AS vs FDMS8570SDC