Fairchild/ON Semiconductor FDMS8670

Name: FDMS8670
Brand: Fairchild/ON Semiconductor
SKU: 2490747-FDMS8670
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FDMS8670

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2490747-FDMS8670

Description:: MOSFET N-CH 30V 24A POWER56

ECAD Model:

Datasheet:: FDMS8670

Specifications

Fairchild/ON Semiconductor FDMS8670 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDMS8670.

Mounting Type
Surface Mount
Package / Case
8-PowerTDFN
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
PowerTrench®
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
5
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
FLAT
Reach Compliance Code
unknown
Pin Count
8
JESD-30 Code
R-PDSO-F5
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
2.5W Ta 78W Tc
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
2.6m Ω @ 24A, 10V
Vgs(th) (Max) @ Id
3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
3.94pF @ 15V
Current - Continuous Drain (Id) @ 25°C
24A Ta 42A Tc
Gate Charge (Qg) (Max) @ Vgs
63nC @ 10V
Drain to Source Voltage (Vdss)
30V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Drain Current-Max (Abs) (ID)
24A
Drain-source On Resistance-Max
0.0026Ohm
Pulsed Drain Current-Max (IDM)
150A
DS Breakdown Voltage-Min
30V
Avalanche Energy Rating (Eas)
288 mJ
RoHS Status
ROHS3 Compliant

Description

FDMS8670 Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 288 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 3.94pF @ 15V is its maximum input capacitance.Drain current refers to the maximum continuous current a device can conduct, and it is 24A.Peak drain current is 150A, which is the maximum pulsed drain current.Normal operation requires that the DS breakdown voltage remain above 30V.For this transistor to work, a voltage 30V is required between drain and source (Vdss).Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.

FDMS8670 Features
the avalanche energy rating (Eas) is 288 mJ
based on its rated peak drain current 150A.
a 30V drain to source voltage (Vdss)

FDMS8670 Applications
There are a lot of Rochester Electronics, LLC
FDMS8670 applications of single MOSFETs transistors.

AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies

FDMS8670 More Descriptions

Trans MOSFET N-CH 30V 42A 8-Pin Power 56 T/R
Embedded - Microcontrollers 3 (168 Hours) 64-LQFP 48 32K x 8 Internal DMA, LVD, POR, PWM, WDT Surface Mount Tray 32-Bit MCU 32-Bit RX210 RX RISC 256KB Flash 3.3V/5V 64-Pin LFQFP Tray
This N-Channel MOSFET is produced using Fairchild Semiconductor's latest proprietary Power Trench® process that has been especially tailored to minimize on-resistance. This part exhibits industry leading switching FOM (RDS*Qgd) to enhance DC-DC synchronous rectifier efficiency.

Product Comparison

The three parts on the right have similar specifications to FDMS8670.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Surface Mount

Transistor Element Material

Operating Temperature

Packaging

Series

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Technology

Terminal Position

Terminal Form

Reach Compliance Code

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Case Connection

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

RoHS Status

Lifecycle Status

Factory Lead Time

Mount

Number of Pins

Weight

JESD-609 Code

Pbfree Code

ECCN Code

Terminal Finish

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Element Configuration

Continuous Drain Current (ID)

Published

Subcategory

Power Dissipation

Turn On Delay Time

Rise Time

Fall Time (Typ)

Turn-Off Delay Time

Threshold Voltage

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

FET Feature

REACH SVHC

Radiation Hardening

Lead Free

View Compare
FDMS8670

Fairchild/ON Semiconductor

Surface Mount

8-PowerTDFN

YES

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®

Obsolete

1 (Unlimited)

5

MOSFET (Metal Oxide)

DUAL

FLAT

unknown

8

R-PDSO-F5

COMMERCIAL

1

SINGLE WITH BUILT-IN DIODE

2.5W Ta 78W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

2.6m Ω @ 24A, 10V

3V @ 250μA

3.94pF @ 15V

24A Ta 42A Tc

63nC @ 10V

30V

4.5V 10V

±20V

24A

0.0026Ohm

150A

30V

288 mJ

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
FDMS8350LET40

Fairchild/ON Semiconductor

Surface Mount

8-PowerTDFN

-

-

-55°C~175°C TJ

Tape & Reel (TR)

PowerTrench®

Active

1 (Unlimited)

-

MOSFET (Metal Oxide)

-

-

not_compliant

-

-

-

-

-

3.33W Ta 125W Tc

-

-

N-Channel

-

0.85m Ω @ 47A, 10V

3V @ 250μA

16590pF @ 20V

49A Ta 300A Tc

219nC @ 10V

40V

4.5V 10V

±20V

-

-

-

-

-

ROHS3 Compliant

ACTIVE (Last Updated: 1 week ago)

12 Weeks

Surface Mount

8

56.5mg

e3

yes

EAR99

Tin (Sn)

260

NOT SPECIFIED

Single

300A

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

FDMS8670 vs FDMS8350LET40
FDMS8570SDC

Fairchild/ON Semiconductor

Surface Mount

8-PowerTDFN

-

SILICON

-55°C~150°C TJ

Digi-Reel®

PowerTrench®, SyncFET™

Obsolete

1 (Unlimited)

5

MOSFET (Metal Oxide)

DUAL

FLAT

-

-

R-PDSO-F5

-

1

-

3.3W Ta 59W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

2.8m Ω @ 28A, 10V

2.2V @ 1mA

2825pF @ 13V

28A Ta 60A Tc

42nC @ 10V

-

4.5V 10V

±12V

-

-

100A

-

45 mJ

RoHS Compliant

LAST SHIPMENTS (Last Updated: 1 week ago)

-

Surface Mount

8

90mg

e3

yes

EAR99

Tin (Sn)

-

-

Single

60A

2017

FET General Purpose Power

59W

11 ns

4ns

3 ns

33 ns

1.5V

MO-240AA

12V

25V

Schottky Diode (Body)

No SVHC

No

-

FDMS8670 vs FDMS8570SDC
FDMS8050ET30

Fairchild/ON Semiconductor

Surface Mount

8-PowerTDFN

-

-

-55°C~175°C TJ

Tape & Reel (TR)

PowerTrench®

Not For New Designs

1 (Unlimited)

-

MOSFET (Metal Oxide)

-

-

not_compliant

-

-

-

-

-

3.3W Ta 180W Tc

-

-

N-Channel

-

0.65m Ω @ 55A, 10V

3V @ 750μA

22610pF @ 15V

55A Ta 423A Tc

285nC @ 10V

30V

4.5V 10V

±20V

-

-

-

-

-

ROHS3 Compliant

ACTIVE, NOT REC (Last Updated: 2 days ago)

6 Weeks

Surface Mount

8

56.5mg

e3

yes

EAR99

Tin (Sn)

260

NOT SPECIFIED

Single

423A

2017

-

-

-

-

-

-

-

-

-

-

-

-

-

Lead Free

FDMS8670 vs FDMS8050ET30