Fairchild/ON Semiconductor FDMS8660S
- Part Number:
- FDMS8660S
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2489353-FDMS8660S
- Description:
- MOSFET N-CH 30V 25A POWER56
- Datasheet:
- FDMS8660S
Fairchild/ON Semiconductor FDMS8660S technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDMS8660S.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-PowerTDFN
- Number of Pins8
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesPowerTrench®
- Published2007
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Voltage - Rated DC30V
- TechnologyMOSFET (Metal Oxide)
- Current Rating40A
- Number of Elements1
- Power Dissipation-Max2.5W Ta 83W Tc
- Power Dissipation83W
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs2.4m Ω @ 25A, 10V
- Vgs(th) (Max) @ Id2V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds4345pF @ 15V
- Current - Continuous Drain (Id) @ 25°C25A Ta 40A Tc
- Gate Charge (Qg) (Max) @ Vgs113nC @ 10V
- Rise Time12ns
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)50 ns
- Turn-Off Delay Time76 ns
- Continuous Drain Current (ID)25A
- Threshold Voltage1.5V
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage30V
- REACH SVHCNo SVHC
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
FDMS8660S Description
The FDMS8660S has been designed to minimize losses in power conversion applications. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.
FDMS8660S Features Max rDS(on) = 2.4m? at VGS = 10V, ID = 25A Max rDS(on) = 3.5m? at VGS = 4.5V, ID = 21A Advanced Package and Silicon combination for low rDS(on) and high efficiency SyncFET Schottky Body Diode MSL1 robust package design RoHS Compliant
FDMS8660S Applications Synchronous Rectifier for DC/DC Converters Notebook Vcore/ GPU low-side switch Networking Point of Load low-side switch Telecom secondary side rectification
FDMS8660S Features Max rDS(on) = 2.4m? at VGS = 10V, ID = 25A Max rDS(on) = 3.5m? at VGS = 4.5V, ID = 21A Advanced Package and Silicon combination for low rDS(on) and high efficiency SyncFET Schottky Body Diode MSL1 robust package design RoHS Compliant
FDMS8660S Applications Synchronous Rectifier for DC/DC Converters Notebook Vcore/ GPU low-side switch Networking Point of Load low-side switch Telecom secondary side rectification
FDMS8660S More Descriptions
Trans MOSFET N-CH 30V 25A 8-Pin Power 56 T/R
MOSFET 30V 40A 2.4 OHM NCH POWER T
MOSFET, N, POWER56; Transistor Polarity: N Channel; Continuous Drain Current Id: 40A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0024ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.5V; Power Dissipation Pd: 83W; Transistor Case Style: Power 56; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Capacitance Ciss Typ: 4345pF; Current Id Max: 40A; On State Resistance Max: 2.4mohm; Operating Temperature Min: -55°C; Pin Configuration: D(5,6,7,8), G(4), S(1,2,3); Pulse Current Idm: 200A; Termination Type: Surface Mount Device; Voltage Vds Typ: 30V; Voltage Vgs Max: 20V; Voltage Vgs Rds on Measurement: 10V; Voltage Vgs th Max: 2V; Voltage Vgs th Min: 1V
MOSFET 30V 40A 2.4 OHM NCH POWER T
MOSFET, N, POWER56; Transistor Polarity: N Channel; Continuous Drain Current Id: 40A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0024ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.5V; Power Dissipation Pd: 83W; Transistor Case Style: Power 56; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Capacitance Ciss Typ: 4345pF; Current Id Max: 40A; On State Resistance Max: 2.4mohm; Operating Temperature Min: -55°C; Pin Configuration: D(5,6,7,8), G(4), S(1,2,3); Pulse Current Idm: 200A; Termination Type: Surface Mount Device; Voltage Vds Typ: 30V; Voltage Vgs Max: 20V; Voltage Vgs Rds on Measurement: 10V; Voltage Vgs th Max: 2V; Voltage Vgs th Min: 1V
The three parts on the right have similar specifications to FDMS8660S.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)Voltage - Rated DCTechnologyCurrent RatingNumber of ElementsPower Dissipation-MaxPower DissipationFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageREACH SVHCRoHS StatusLead FreeLifecycle StatusFactory Lead TimeContact PlatingWeightTransistor Element MaterialJESD-609 CodePbfree CodeNumber of TerminationsECCN CodeSubcategoryTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)JESD-30 CodeNumber of ChannelsElement ConfigurationOperating ModeCase ConnectionTurn On Delay TimeTransistor ApplicationJEDEC-95 CodeDrain Current-Max (Abs) (ID)Pulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)HeightLengthWidthTerminal FinishRadiation HardeningDrain-source On Resistance-MaxView Compare
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FDMS8660SSurface MountSurface Mount8-PowerTDFN8-55°C~150°C TJTape & Reel (TR)PowerTrench®2007Obsolete1 (Unlimited)30VMOSFET (Metal Oxide)40A12.5W Ta 83W Tc83WN-Channel2.4m Ω @ 25A, 10V2V @ 250μA4345pF @ 15V25A Ta 40A Tc113nC @ 10V12ns4.5V 10V±20V50 ns76 ns25A1.5V20V30VNo SVHCRoHS CompliantLead Free---------------------------------
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Surface MountSurface Mount8-PowerTDFN8-55°C~150°C TJTape & Reel (TR)PowerTrench®2010Active1 (Unlimited)-MOSFET (Metal Oxide)-12.7W Ta 156W Tc-N-Channel1.65m Ω @ 32A, 10V4.5V @ 250μA11530pF @ 30V32A Ta 155A Tc154nC @ 10V27ns8V 10V±20V11 ns42 ns155A-20V60V-ROHS3 Compliant-ACTIVE (Last Updated: 3 days ago)13 WeeksTin56.5mgSILICONe3yes5EAR99FET General Purpose PowerDUALNO LEADNOT SPECIFIEDnot_compliantNOT SPECIFIEDR-PDSO-N51SingleENHANCEMENT MODEDRAIN43 nsSWITCHINGMO-240AA32A320A937 mJ1.05mm5.1mm6.25mm---
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Surface MountSurface Mount8-PowerTDFN8-55°C~150°C TJTape & Reel (TR)PowerTrench®-Active1 (Unlimited)-MOSFET (Metal Oxide)-12.5W Ta 96W Tc96WN-Channel4.8m Ω @ 17A, 10V4.5V @ 250μA6290pF @ 40V17A Ta 50A Tc95nC @ 10V23ns8V 10V±20V9 ns35 ns17A-20V80V-ROHS3 CompliantLead FreeACTIVE (Last Updated: 2 days ago)13 Weeks-68.1mgSILICONe3yes5EAR99FET General Purpose PowerDUALFLAT---R-PDSO-F5-SingleENHANCEMENT MODEDRAIN28 nsSWITCHINGMO-240AA50A--1.05mm5.1mm5.85mmTin (Sn)No-
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Surface MountSurface Mount8-PowerTDFN8-55°C~150°C TJTape & Reel (TR)PowerTrench®, SyncFET™-Active1 (Unlimited)-MOSFET (Metal Oxide)-12.5W Ta 36W Tc-N-Channel5m Ω @ 18A, 10V3V @ 1mA1815pF @ 15V18A Ta 22A Tc31nC @ 10V2.3ns4.5V 10V±20V6 ns25 ns18A-20V30V-ROHS3 Compliant-ACTIVE (Last Updated: 2 days ago)26 WeeksTin74mgSILICONe3yes5EAR99FET General Purpose PowerDUALFLATNOT SPECIFIEDnot_compliantNOT SPECIFIEDR-PDSO-F5-SingleENHANCEMENT MODEDRAIN10 nsSWITCHINGMO-240AA22A100A33 mJ1mm6mm5mm--0.005Ohm
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