Fairchild/ON Semiconductor FDMS8660AS

Name: FDMS8660AS
Brand: Fairchild/ON Semiconductor
SKU: 2490263-FDMS8660AS
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FDMS8660AS

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2490263-FDMS8660AS

Description:: MOSFET N-CH 30V 28A POWER56

ECAD Model:

Datasheet:: FDMS8660AS

Specifications

Fairchild/ON Semiconductor FDMS8660AS technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDMS8660AS.

Mounting Type
Surface Mount
Package / Case
8-PowerTDFN
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
PowerTrench®
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
5
Terminal Finish
NOT SPECIFIED
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
NO LEAD
Reach Compliance Code
unknown
Pin Count
8
JESD-30 Code
R-PDSO-N5
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
2.5W Ta 104W Tc
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
2.1m Ω @ 28A, 10V
Vgs(th) (Max) @ Id
3V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds
5.865pF @ 15V
Current - Continuous Drain (Id) @ 25°C
28A Ta 49A Tc
Gate Charge (Qg) (Max) @ Vgs
83nC @ 10V
Drain to Source Voltage (Vdss)
30V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Drain Current-Max (Abs) (ID)
28A
Drain-source On Resistance-Max
0.0021Ohm
Pulsed Drain Current-Max (IDM)
200A
DS Breakdown Voltage-Min
30V
Avalanche Energy Rating (Eas)
726 mJ
RoHS Status
ROHS3 Compliant

Description

FDMS8660AS Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 726 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 5.865pF @ 15V.A device's drain current is its maximum continuous current, and this device's drain current is 28A.A maximum pulsed drain current of 200A is the maximum peak drain current rated for this device.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 30V.In order to operate this transistor, a voltage of 30V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (4.5V 10V).

FDMS8660AS Features
the avalanche energy rating (Eas) is 726 mJ
based on its rated peak drain current 200A.
a 30V drain to source voltage (Vdss)

FDMS8660AS Applications
There are a lot of Rochester Electronics, LLC
FDMS8660AS applications of single MOSFETs transistors.

Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit

FDMS8660AS More Descriptions

TRANS MOSFET N-CH 30V 28A 8PIN PWR 56
30V N-Channel PowerTrench® SyncFET™
French Electronic Distributor since 1988
The FDMS8660AS has been designed to minimize losses inpower conversion application. Advancements in both silicon andpackage technologies have been combined to offer the lowestrDS(on) while maintaining excellent switching performance. Thisdevice has the added benefit of an efficient monolithic Schottkybody diode.

Product Comparison

The three parts on the right have similar specifications to FDMS8660AS.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Surface Mount

Transistor Element Material

Operating Temperature

Packaging

Series

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Terminal Finish

Technology

Terminal Position

Terminal Form

Reach Compliance Code

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Case Connection

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

RoHS Status

Lifecycle Status

Factory Lead Time

Mount

Number of Pins

Weight

JESD-609 Code

Pbfree Code

ECCN Code

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Number of Channels

Element Configuration

Turn On Delay Time

Rise Time

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Lead Free

Contact Plating

Published

Subcategory

JEDEC-95 Code

Height

Length

Width

Power Dissipation

Radiation Hardening

View Compare
FDMS8660AS

Fairchild/ON Semiconductor

Surface Mount

8-PowerTDFN

YES

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®

Obsolete

1 (Unlimited)

5

NOT SPECIFIED

MOSFET (Metal Oxide)

DUAL

NO LEAD

unknown

8

R-PDSO-N5

COMMERCIAL

1

SINGLE WITH BUILT-IN DIODE

2.5W Ta 104W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

2.1m Ω @ 28A, 10V

3V @ 1mA

5.865pF @ 15V

28A Ta 49A Tc

83nC @ 10V

30V

4.5V 10V

±20V

28A

0.0021Ohm

200A

30V

726 mJ

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
FDMS86550ET60

Fairchild/ON Semiconductor

Surface Mount

8-PowerTDFN

-

-

-55°C~175°C TJ

Tape & Reel (TR)

PowerTrench®

Active

1 (Unlimited)

-

Tin (Sn)

MOSFET (Metal Oxide)

-

-

not_compliant

-

-

-

-

-

3.3W Ta 187W Tc

-

-

N-Channel

-

1.65m Ω @ 32A, 10V

4.5V @ 250μA

8235pF @ 30V

32A Ta 245A Tc

154nC @ 10V

-

8V 10V

±20V

-

-

-

-

-

ROHS3 Compliant

ACTIVE (Last Updated: 3 days ago)

12 Weeks

Surface Mount

8

56.5mg

e3

yes

EAR99

260

NOT SPECIFIED

1

Single

43 ns

27ns

11 ns

42 ns

245A

20V

60V

Lead Free

-

-

-

-

-

-

-

-

-

FDMS8660AS vs FDMS86550ET60
FDMS86550

Fairchild/ON Semiconductor

Surface Mount

8-PowerTDFN

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®

Active

1 (Unlimited)

5

-

MOSFET (Metal Oxide)

DUAL

NO LEAD

not_compliant

-

R-PDSO-N5

-

1

-

2.7W Ta 156W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

1.65m Ω @ 32A, 10V

4.5V @ 250μA

11530pF @ 30V

32A Ta 155A Tc

154nC @ 10V

-

8V 10V

±20V

32A

-

320A

-

937 mJ

ROHS3 Compliant

ACTIVE (Last Updated: 3 days ago)

13 Weeks

Surface Mount

8

56.5mg

e3

yes

EAR99

NOT SPECIFIED

NOT SPECIFIED

1

Single

43 ns

27ns

11 ns

42 ns

155A

20V

60V

-

Tin

2010

FET General Purpose Power

MO-240AA

1.05mm

5.1mm

6.25mm

-

-

FDMS8660AS vs FDMS86550
FDMS86310

Fairchild/ON Semiconductor

Surface Mount

8-PowerTDFN

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®

Active

1 (Unlimited)

5

Tin (Sn)

MOSFET (Metal Oxide)

DUAL

FLAT

-

-

R-PDSO-F5

-

1

-

2.5W Ta 96W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

4.8m Ω @ 17A, 10V

4.5V @ 250μA

6290pF @ 40V

17A Ta 50A Tc

95nC @ 10V

-

8V 10V

±20V

50A

-

-

-

-

ROHS3 Compliant

ACTIVE (Last Updated: 2 days ago)

13 Weeks

Surface Mount

8

68.1mg

e3

yes

EAR99

-

-

-

Single

28 ns

23ns

9 ns

35 ns

17A

20V

80V

Lead Free

-

-

FET General Purpose Power

MO-240AA

1.05mm

5.1mm

5.85mm

96W

No

FDMS8660AS vs FDMS86310