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FDMS86350

Fairchild/ON Semiconductor FDMS86350

Part Number:
FDMS86350
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2848541-FDMS86350
Description:
MOSFET N-CH 80V 80A POWER56
ECAD Model:
Datasheet:
FDMS86350

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Specifications
Fairchild/ON Semiconductor FDMS86350 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDMS86350.
  • Lifecycle Status
    ACTIVE (Last Updated: 2 days ago)
  • Factory Lead Time
    13 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-PowerTDFN
  • Number of Pins
    8
  • Weight
    56.5mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    PowerTrench®
  • Published
    2017
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    5
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • JESD-30 Code
    R-PDSO-N5
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    2.7W Ta 156W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    2.7W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    50 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    2.4m Ω @ 25A, 10V
  • Vgs(th) (Max) @ Id
    4.5V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    10680pF @ 40V
  • Current - Continuous Drain (Id) @ 25°C
    25A Ta 130A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    155nC @ 10V
  • Rise Time
    34ns
  • Drive Voltage (Max Rds On,Min Rds On)
    8V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    11 ns
  • Turn-Off Delay Time
    40 ns
  • Continuous Drain Current (ID)
    25A
  • JEDEC-95 Code
    MO-240AA
  • Gate to Source Voltage (Vgs)
    20V
  • Drain-source On Resistance-Max
    0.0024Ohm
  • Drain to Source Breakdown Voltage
    80V
  • Pulsed Drain Current-Max (IDM)
    300A
  • Max Junction Temperature (Tj)
    150°C
  • Height
    1.1mm
  • Length
    5.1mm
  • Width
    6.25mm
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
Description
FDMS86350 Description
FDMS86350 is an N-Channel PowerTrench? MOSFET manufactured by onsemi. The N-Channel MOSFET FDMS86350 is produced using an advanced Power Trench? process that has been specially tailored to minimize the on-state resistance and yet maintain superior switching performance. The FDMS86350 is offered in the Power-56-8 package. It is specified for operation from -55°C to 150°C with 156W power dissipation. 

FDMS86350 Features
Max rDS(on) = 2.4 mΩ at VGS = 10 V, ID = 25 A
Max rDS(on) = 3.2 mΩ at VGS = 8 V, ID = 22 A
Advanced Package and Silicon combination for low rDS(on) and high efficiency
MSL1 robust package design
100% UIL tested
RoHS Compliant

FDMS86350 Applications
Primary MOSFET
Synchronous Rectifier
Load Switch
Motor Control Switch
RON and Inrush Current Calculations
FDMS86350 More Descriptions
Single N-Channel 80 V 2.7 W 155 nC Silicon Surface Mount Mosfet - POWER 56-8
N-Channel PowerTrench® MOSFET 80V, 130A, 2.4mΩ
MOSFET, N-CH, 80V, 130A, POWER 56-8; Transistor Polarity:N Channel; Continuous Drain Current Id:130A; Source Voltage Vds:80V; On Resistance
Power Field-Effect Transistor, 25A I(D), 80V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
MOSFET, N-CH, 80V, 130A, POWER 56-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 130A; Drain Source Voltage Vds: 80V; On Resistance Rds(on): 0.002ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.8V; Power Dissipation Pd: 156W; Transistor Case Style: Power 56; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: PowerTrench Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
Product Comparison
The three parts on the right have similar specifications to FDMS86350.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Subcategory
    Technology
    Terminal Position
    JESD-30 Code
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Drain-source On Resistance-Max
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Max Junction Temperature (Tj)
    Height
    Length
    Width
    Radiation Hardening
    RoHS Status
    Terminal Form
    Threshold Voltage
    Avalanche Energy Rating (Eas)
    FET Feature
    REACH SVHC
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Drain to Source Voltage (Vdss)
    Lead Free
    Contact Plating
    Drain Current-Max (Abs) (ID)
    View Compare
  • FDMS86350
    FDMS86350
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 2 days ago)
    13 Weeks
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    56.5mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    2017
    e3
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    Tin (Sn)
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    R-PDSO-N5
    1
    1
    2.7W Ta 156W Tc
    Single
    ENHANCEMENT MODE
    2.7W
    DRAIN
    50 ns
    N-Channel
    SWITCHING
    2.4m Ω @ 25A, 10V
    4.5V @ 250μA
    10680pF @ 40V
    25A Ta 130A Tc
    155nC @ 10V
    34ns
    8V 10V
    ±20V
    11 ns
    40 ns
    25A
    MO-240AA
    20V
    0.0024Ohm
    80V
    300A
    150°C
    1.1mm
    5.1mm
    6.25mm
    No
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • FDMS8570SDC
    FDMS8570SDC
    Fairchild/ON Semiconductor
    LAST SHIPMENTS (Last Updated: 1 week ago)
    -
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    90mg
    SILICON
    -55°C~150°C TJ
    Digi-Reel®
    PowerTrench®, SyncFET™
    2017
    e3
    yes
    Obsolete
    1 (Unlimited)
    5
    EAR99
    Tin (Sn)
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    R-PDSO-F5
    1
    -
    3.3W Ta 59W Tc
    Single
    ENHANCEMENT MODE
    59W
    DRAIN
    11 ns
    N-Channel
    SWITCHING
    2.8m Ω @ 28A, 10V
    2.2V @ 1mA
    2825pF @ 13V
    28A Ta 60A Tc
    42nC @ 10V
    4ns
    4.5V 10V
    ±12V
    3 ns
    33 ns
    60A
    MO-240AA
    12V
    -
    25V
    100A
    -
    -
    -
    -
    No
    RoHS Compliant
    FLAT
    1.5V
    45 mJ
    Schottky Diode (Body)
    No SVHC
    -
    -
    -
    -
    -
    -
    -
    FDMS86350 vs FDMS8570SDC
  • FDMS8050ET30
    FDMS8050ET30
    Fairchild/ON Semiconductor
    ACTIVE, NOT REC (Last Updated: 2 days ago)
    6 Weeks
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    56.5mg
    -
    -55°C~175°C TJ
    Tape & Reel (TR)
    PowerTrench®
    2017
    e3
    yes
    Not For New Designs
    1 (Unlimited)
    -
    EAR99
    Tin (Sn)
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    3.3W Ta 180W Tc
    Single
    -
    -
    -
    -
    N-Channel
    -
    0.65m Ω @ 55A, 10V
    3V @ 750μA
    22610pF @ 15V
    55A Ta 423A Tc
    285nC @ 10V
    -
    4.5V 10V
    ±20V
    -
    -
    423A
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    -
    -
    -
    -
    260
    not_compliant
    NOT SPECIFIED
    30V
    Lead Free
    -
    -
    FDMS86350 vs FDMS8050ET30
  • FDMS0312AS
    FDMS0312AS
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 2 days ago)
    26 Weeks
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    74mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®, SyncFET™
    -
    e3
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    -
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    R-PDSO-F5
    1
    -
    2.5W Ta 36W Tc
    Single
    ENHANCEMENT MODE
    -
    DRAIN
    10 ns
    N-Channel
    SWITCHING
    5m Ω @ 18A, 10V
    3V @ 1mA
    1815pF @ 15V
    18A Ta 22A Tc
    31nC @ 10V
    2.3ns
    4.5V 10V
    ±20V
    6 ns
    25 ns
    18A
    MO-240AA
    20V
    0.005Ohm
    30V
    100A
    -
    1mm
    6mm
    5mm
    -
    ROHS3 Compliant
    FLAT
    -
    33 mJ
    -
    -
    NOT SPECIFIED
    not_compliant
    NOT SPECIFIED
    -
    -
    Tin
    22A
    FDMS86350 vs FDMS0312AS
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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