Fairchild/ON Semiconductor FDMS86300DC

Name: FDMS86300DC
Brand: Fairchild/ON Semiconductor
SKU: 2484674-FDMS86300DC
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FDMS86300DC

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2484674-FDMS86300DC

Description:: MOSFET N CH 80V 24A 8-PQFN

ECAD Model:

Datasheet:: FDMS86300DC

Specifications

Fairchild/ON Semiconductor FDMS86300DC technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDMS86300DC.

Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Factory Lead Time
5 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-PowerTDFN
Number of Pins
8
Weight
90mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
Dual Cool™, PowerTrench®
Published
2010
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
5
ECCN Code
EAR99
Additional Feature
ULTRA LOW RESISTANCE
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Form
FLAT
JESD-30 Code
R-PDSO-F5
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
3.2W Ta 125W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
3.2W
Case Connection
DRAIN
Turn On Delay Time
29 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
3.1m Ω @ 24A, 10V
Vgs(th) (Max) @ Id
4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
7005pF @ 40V
Current - Continuous Drain (Id) @ 25°C
24A Ta 76A Tc
Gate Charge (Qg) (Max) @ Vgs
101nC @ 10V
Rise Time
25ns
Drive Voltage (Max Rds On,Min Rds On)
8V 10V
Vgs (Max)
±20V
Fall Time (Typ)
9 ns
Turn-Off Delay Time
35 ns
Continuous Drain Current (ID)
24A
Threshold Voltage
2.5V
JEDEC-95 Code
MO-240AA
Gate to Source Voltage (Vgs)
20V
Drain Current-Max (Abs) (ID)
60A
Drain to Source Breakdown Voltage
80V
Pulsed Drain Current-Max (IDM)
260A
Avalanche Energy Rating (Eas)
240 mJ
Max Junction Temperature (Tj)
150°C
Nominal Vgs
3.3 V
Height
1.05mm
Length
5.1mm
Width
5.85mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

Description
The FDMS86300DC is a POWERTRENCH? MOSFET, N-Channel, DUAL COOL? 56 80 V, 110 A, 3.1 mΩ. This N-Channel MOSFET is created utilizing the cutting-edge POWERTRENCH? process from Fairchild Semiconductor, which combines Shielded Gate technology. With the lowest rDS(on) and the best switching performance, possible thanks to incredibly low Junction-to-Ambient thermal resistance, advancements in silicon and DUAL COOL? packaging technologies have been integrated.

Features
High Performance Technology for Extremely Low rDS(on)
100% UIL Tested
RoHS Compliant
DUAL COOL Top Side Cooling PQFN package
Max rDS(on) = 3.1 m at VGS = 10 V, ID = 24 A
Max rDS(on) = 4.0 m at VGS = 8 V, ID = 21 A

Applications
Telecom Secondary Side Rectification
High-End Server/Workstation Vcore Low Side
Synchronous Rectifier for DC/DC Converters
Automotive Electronics
As for Switching Devices in Electronic Control Units

FDMS86300DC More Descriptions

MOSFET, N CH, 80V, 0.0026OHM, 76A, POWER 56-8; Transistor Polarity:N Channel; Co
N-Channel PowerTrench® MOSFET, Dual CoolTM 56, 80V, 110A, 3.1mΩ
Dual N-Channel 80 V 5 mOhm 84 nC 125 W PowerTrench SMT Mosfet - PQFN-8
Power Field-Effect Transistor, 24A I(D), 80V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process. Advancements in both silicon and Dual Cool™ package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance.
MOSFET, N CH, 80V, 76A, POWER 56-8; Transistor Polarity:N Channel; Continuous Drain Current Id:76A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.0026ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.3V; Power Dissipation Pd:125W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:-; SVHC:No SVHC (20-Jun-2013)

Product Comparison

The three parts on the right have similar specifications to FDMS86300DC.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Series

Published

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Additional Feature

Subcategory

Technology

Terminal Form

JESD-30 Code

Number of Elements

Number of Channels

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain Current-Max (Abs) (ID)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Avalanche Energy Rating (Eas)

Max Junction Temperature (Tj)

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

JESD-609 Code

Resistance

Terminal Finish

Terminal Position

Contact Plating

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Drain-source On Resistance-Max

View Compare
FDMS86300DC

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 2 days ago)

5 Weeks

Surface Mount

Surface Mount

8-PowerTDFN

8

90mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

Dual Cool™, PowerTrench®

2010

yes

Active

1 (Unlimited)

5

EAR99

ULTRA LOW RESISTANCE

FET General Purpose Power

MOSFET (Metal Oxide)

FLAT

R-PDSO-F5

1

1

3.2W Ta 125W Tc

Single

ENHANCEMENT MODE

3.2W

DRAIN

29 ns

N-Channel

SWITCHING

3.1m Ω @ 24A, 10V

4.5V @ 250μA

7005pF @ 40V

24A Ta 76A Tc

101nC @ 10V

25ns

8V 10V

±20V

9 ns

35 ns

24A

2.5V

MO-240AA

20V

60A

80V

260A

240 mJ

150°C

3.3 V

1.05mm

5.1mm

5.85mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-
FDMS7672AS

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 3 days ago)

18 Weeks

Surface Mount

Surface Mount

8-PowerTDFN

8

68.1mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®, SyncFET™

-

yes

Active

1 (Unlimited)

5

EAR99

-

FET General Purpose Power

MOSFET (Metal Oxide)

-

R-XDSO-N5

1

-

2.5W Ta 46W Tc

Single

ENHANCEMENT MODE

45W

DRAIN

12 ns

N-Channel

SWITCHING

4m Ω @ 18A, 10V

3V @ 1mA

2820pF @ 15V

19A Ta 42A Tc

46nC @ 10V

5ns

4.5V 10V

±20V

4 ns

28 ns

42A

-

-

20V

-

30V

90A

60 mJ

-

1.9 V

1.05mm

5mm

6mm

No SVHC

No

ROHS3 Compliant

Lead Free

e3

3.5MOhm

Tin (Sn)

DUAL

-

-

-

-

-

FDMS86300DC vs FDMS7672AS
FDMS7660

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 2 days ago)

18 Weeks

Surface Mount

Surface Mount

8-PowerTDFN

8

68.1mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®

2007

yes

Active

1 (Unlimited)

5

EAR99

-

FET General Purpose Power

MOSFET (Metal Oxide)

-

R-PDSO-N5

1

-

2.5W Ta 78W Tc

Single

ENHANCEMENT MODE

2.5W

DRAIN

17 ns

N-Channel

SWITCHING

2.8m Ω @ 25A, 10V

3V @ 250μA

5565pF @ 15V

25A Ta 42A Tc

84nC @ 10V

9ns

4.5V 10V

±20V

7 ns

37 ns

25A

1.9V

MO-240AA

20V

-

30V

-

-

-

1.9 V

1.05mm

5mm

6mm

No SVHC

No

ROHS3 Compliant

Lead Free

e3

2.8MOhm

Tin (Sn)

DUAL

-

-

-

-

-

FDMS86300DC vs FDMS7660
FDMS0312AS

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 2 days ago)

26 Weeks

Surface Mount

Surface Mount

8-PowerTDFN

8

74mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®, SyncFET™

-

yes

Active

1 (Unlimited)

5

EAR99

-

FET General Purpose Power

MOSFET (Metal Oxide)

FLAT

R-PDSO-F5

1

-

2.5W Ta 36W Tc

Single

ENHANCEMENT MODE

-

DRAIN

10 ns

N-Channel

SWITCHING

5m Ω @ 18A, 10V

3V @ 1mA

1815pF @ 15V

18A Ta 22A Tc

31nC @ 10V

2.3ns

4.5V 10V

±20V

6 ns

25 ns

18A

-

MO-240AA

20V

22A

30V

100A

33 mJ

-

-

1mm

6mm

5mm

-

-

ROHS3 Compliant

-

e3

-

-

DUAL

Tin

NOT SPECIFIED

not_compliant

NOT SPECIFIED

0.005Ohm

FDMS86300DC vs FDMS0312AS

Certification

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FDMS863~~(15)~~
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FDM~~(86)~~

Part Number	Manufacturers	Description	Price
FDMS86300DC DISTI #	ON Semiconductor	MOSFET N CH 80V 24A 8-PQFN RoHS: Compliant	3000 $1.188
FDMS86300DC DISTI #	ON Semiconductor	MOSFET N CH 80V 24A 8-PQFN RoHS: Compliant	1 $2.81 10 $2.538 100 $2.0394 500 $1.5862 1000 $1.31428
FDMS86300DC DISTI #	ON Semiconductor	MOSFET N CH 80V 24A 8-PQFN RoHS: Compliant	1 $2.81 10 $2.538 100 $2.0394 500 $1.5862 1000 $1.31428
FDMS86300DC DISTI #	ON Semiconductor	Trans MOSFET N-CH 80V 24A 8-Pin Power 56 T/R - Tap RoHS: Compliant	3000 $1.0449 6000 $1.0379 12000 $1.0249 18000 $1.0119 30000 $0.9869
FDMS86300DC DISTI #	ON Semiconductor	Trans MOSFET N-CH 80V 24A 8-Pin Power 56 T/R (Alt: RoHS: Compliant
FDMS86300DC DISTI #	ON Semiconductor	MOSFET Transistor, N Channel, 76 A, 80 V, 0.0026 o	1 $1.04 9000 $1
FDMS86300DC DISTI #	ON Semiconductor	MOSFET, N CHANNEL, 80V, 0.0026OHM, 76A, POWER 56-8	1 $2.36 25 $2 50 $1.8 100 $1.6 250 $1.51 500 $1.41 1000 $1.16
FDMS86300DC DISTI #	ON Semiconductor	MOSFET 80V N-Ch Dual Cool PowerTrench MOSFET RoHS: Compliant	1 $2.36 10 $2 100 $1.6 500 $1.41 1000 $1.16 3000 $1.09
FDMS86300DC DISTI #	ON Semiconductor	MOSFET, N CH, 80V, 76A, POWER 56-8 RoHS: Compliant	1 $2.05 10 $1.53 100 $1.22 250 $1.15 500 $1.08
FDMS86300DC DISTI #	ON Semiconductor	MOSFET, N CH, 80V, 76A, POWER 56-8 RoHS: Compliant	1 $3.74 10 $3.17 100 $2.54 500 $2.23 1000 $1.84 3000 $1.73 6000 $1.66 9000 $1.59

Fairchild/ON Semiconductor FDMS86300DC

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