FDMS86263P

Fairchild/ON Semiconductor FDMS86263P

Part Number:
FDMS86263P
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
3070301-FDMS86263P
Description:
MOSFET P-CH 150V 22A POWER 56
ECAD Model:
Datasheet:
FDMS86263P

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Specifications
Fairchild/ON Semiconductor FDMS86263P technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDMS86263P.
  • Lifecycle Status
    ACTIVE (Last Updated: 1 day ago)
  • Factory Lead Time
    16 Weeks
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-PowerTDFN
  • Number of Pins
    8
  • Weight
    68.1mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    PowerTrench®
  • Published
    2017
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    5
  • ECCN Code
    EAR99
  • Subcategory
    Other Transistors
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    FLAT
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Reach Compliance Code
    not_compliant
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • JESD-30 Code
    R-PDSO-F5
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    2.5W Ta 104W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    104W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    17 ns
  • FET Type
    P-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    53m Ω @ 4.4A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    3905pF @ 75V
  • Current - Continuous Drain (Id) @ 25°C
    4.4A Ta 22A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    63nC @ 10V
  • Rise Time
    10ns
  • Drain to Source Voltage (Vdss)
    150V
  • Drive Voltage (Max Rds On,Min Rds On)
    6V 10V
  • Vgs (Max)
    ±25V
  • Fall Time (Typ)
    14 ns
  • Turn-Off Delay Time
    37 ns
  • Continuous Drain Current (ID)
    -4.4A
  • Threshold Voltage
    -2.9V
  • JEDEC-95 Code
    MO-240AA
  • Gate to Source Voltage (Vgs)
    25V
  • Drain Current-Max (Abs) (ID)
    22A
  • Drain-source On Resistance-Max
    0.053Ohm
  • Drain to Source Breakdown Voltage
    -150V
  • Pulsed Drain Current-Max (IDM)
    70A
  • Max Junction Temperature (Tj)
    150°C
  • Height
    1.1mm
  • Length
    5mm
  • Width
    5.85mm
  • RoHS Status
    ROHS3 Compliant
Description
FDMS86263P MOSFET Description
The P-Channel MOSFET FDMS86263P presents the circuit designer with a fresh choice that can streamline the circuitry while enhancing performance and parts usage. This device has very low on-resistance in mid-voltage P-Channel silicon technology and a wide operating temperature of -55 to 150 ℃. 

FDMS86263P MOSFET Features
RoHS Compliant Max rDS(on) = 53 mΩ at VGS = -10 V, ID = -4.4 A Max rDS(on) = 64 mΩ at VGS = -6 V, ID = -4 A Very low Rds-on in Mid-Voltage P-Channel silicon technology optimized for low Qg 100% UIL tested This product is optimized for fast switching applications as well as load switch applications

FDMS86263P MOSFET Applications
Synchronous Rectification Applications UIS Rating System Active Clamp Switch Linear Switching Applications Totem Pole Switching Circuits Ground-Connected Loads
FDMS86263P More Descriptions
PT5 150/25V Pch Power Trench MOSFET - 8LD,PQFN,JEDEC MO-240 AA,5.0X6.0MM
P-Channel PowerTrench® MOSFET -150V, -22A, 53mΩ
Trans MOSFET P-CH 150V 22A 8-Pin PQFN T/R - Tape and Reel
FDMS86263P Series -150 V 4.4 A 53 mOhm P-Ch PowerTrench Mosfet - Power56
MOSFET, P-CH, -150V, -22A, POWER 56-8; Transistor Polarity:P Channel; Continuous Drain Current Id:-22A; Source Voltage Vds:-150V; On Resistance
Power Field-Effect Transistor, 4.4A I(D), 150V, 0.053ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
This P-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® technology. This very high density process is especially tailored to minimize on-state resistance and optimized for superior switching performance.
MOSFET, P-CH, -150V, -22A, POWER 56-8; Transistor Polarity: P Channel; Continuous Drain Current Id: -22A; Drain Source Voltage Vds: -150V; On Resistance Rds(on): 0.042ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -2.9V; Power Dissipation Pd: 104W; Transistor Case Style: Power 56; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: PowerTrench Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
Product Comparison
The three parts on the right have similar specifications to FDMS86263P.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Subcategory
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Max Junction Temperature (Tj)
    Height
    Length
    Width
    RoHS Status
    Avalanche Energy Rating (Eas)
    Terminal Finish
    Lead Free
    Radiation Hardening
    View Compare
  • FDMS86263P
    FDMS86263P
    ACTIVE (Last Updated: 1 day ago)
    16 Weeks
    Tin
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    68.1mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    2017
    e3
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    Other Transistors
    MOSFET (Metal Oxide)
    DUAL
    FLAT
    NOT SPECIFIED
    not_compliant
    NOT SPECIFIED
    R-PDSO-F5
    1
    1
    2.5W Ta 104W Tc
    Single
    ENHANCEMENT MODE
    104W
    DRAIN
    17 ns
    P-Channel
    SWITCHING
    53m Ω @ 4.4A, 10V
    4V @ 250μA
    3905pF @ 75V
    4.4A Ta 22A Tc
    63nC @ 10V
    10ns
    150V
    6V 10V
    ±25V
    14 ns
    37 ns
    -4.4A
    -2.9V
    MO-240AA
    25V
    22A
    0.053Ohm
    -150V
    70A
    150°C
    1.1mm
    5mm
    5.85mm
    ROHS3 Compliant
    -
    -
    -
    -
    -
  • FDMS86550
    ACTIVE (Last Updated: 3 days ago)
    13 Weeks
    Tin
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    56.5mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    2010
    e3
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    NO LEAD
    NOT SPECIFIED
    not_compliant
    NOT SPECIFIED
    R-PDSO-N5
    1
    1
    2.7W Ta 156W Tc
    Single
    ENHANCEMENT MODE
    -
    DRAIN
    43 ns
    N-Channel
    SWITCHING
    1.65m Ω @ 32A, 10V
    4.5V @ 250μA
    11530pF @ 30V
    32A Ta 155A Tc
    154nC @ 10V
    27ns
    -
    8V 10V
    ±20V
    11 ns
    42 ns
    155A
    -
    MO-240AA
    20V
    32A
    -
    60V
    320A
    -
    1.05mm
    5.1mm
    6.25mm
    ROHS3 Compliant
    937 mJ
    -
    -
    -
  • FDMS8050ET30
    ACTIVE, NOT REC (Last Updated: 2 days ago)
    6 Weeks
    -
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    56.5mg
    -
    -55°C~175°C TJ
    Tape & Reel (TR)
    PowerTrench®
    2017
    e3
    yes
    Not For New Designs
    1 (Unlimited)
    -
    EAR99
    -
    MOSFET (Metal Oxide)
    -
    -
    260
    not_compliant
    NOT SPECIFIED
    -
    -
    -
    3.3W Ta 180W Tc
    Single
    -
    -
    -
    -
    N-Channel
    -
    0.65m Ω @ 55A, 10V
    3V @ 750μA
    22610pF @ 15V
    55A Ta 423A Tc
    285nC @ 10V
    -
    30V
    4.5V 10V
    ±20V
    -
    -
    423A
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    Tin (Sn)
    Lead Free
    -
  • FDMS86310
    ACTIVE (Last Updated: 2 days ago)
    13 Weeks
    -
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    68.1mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    -
    e3
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    FLAT
    -
    -
    -
    R-PDSO-F5
    1
    -
    2.5W Ta 96W Tc
    Single
    ENHANCEMENT MODE
    96W
    DRAIN
    28 ns
    N-Channel
    SWITCHING
    4.8m Ω @ 17A, 10V
    4.5V @ 250μA
    6290pF @ 40V
    17A Ta 50A Tc
    95nC @ 10V
    23ns
    -
    8V 10V
    ±20V
    9 ns
    35 ns
    17A
    -
    MO-240AA
    20V
    50A
    -
    80V
    -
    -
    1.05mm
    5.1mm
    5.85mm
    ROHS3 Compliant
    -
    Tin (Sn)
    Lead Free
    No
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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