Fairchild/ON Semiconductor FDMS86263P
- Part Number:
- FDMS86263P
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 3070301-FDMS86263P
- Description:
- MOSFET P-CH 150V 22A POWER 56
- Datasheet:
- FDMS86263P
Fairchild/ON Semiconductor FDMS86263P technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDMS86263P.
- Lifecycle StatusACTIVE (Last Updated: 1 day ago)
- Factory Lead Time16 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-PowerTDFN
- Number of Pins8
- Weight68.1mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesPowerTrench®
- Published2017
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations5
- ECCN CodeEAR99
- SubcategoryOther Transistors
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormFLAT
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Reach Compliance Codenot_compliant
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- JESD-30 CodeR-PDSO-F5
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max2.5W Ta 104W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation104W
- Case ConnectionDRAIN
- Turn On Delay Time17 ns
- FET TypeP-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs53m Ω @ 4.4A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds3905pF @ 75V
- Current - Continuous Drain (Id) @ 25°C4.4A Ta 22A Tc
- Gate Charge (Qg) (Max) @ Vgs63nC @ 10V
- Rise Time10ns
- Drain to Source Voltage (Vdss)150V
- Drive Voltage (Max Rds On,Min Rds On)6V 10V
- Vgs (Max)±25V
- Fall Time (Typ)14 ns
- Turn-Off Delay Time37 ns
- Continuous Drain Current (ID)-4.4A
- Threshold Voltage-2.9V
- JEDEC-95 CodeMO-240AA
- Gate to Source Voltage (Vgs)25V
- Drain Current-Max (Abs) (ID)22A
- Drain-source On Resistance-Max0.053Ohm
- Drain to Source Breakdown Voltage-150V
- Pulsed Drain Current-Max (IDM)70A
- Max Junction Temperature (Tj)150°C
- Height1.1mm
- Length5mm
- Width5.85mm
- RoHS StatusROHS3 Compliant
FDMS86263P MOSFET Description
The P-Channel MOSFET FDMS86263P presents the circuit designer with a fresh choice that can streamline the circuitry while enhancing performance and parts usage. This device has very low on-resistance in mid-voltage P-Channel silicon technology and a wide operating temperature of -55 to 150 ℃.
FDMS86263P MOSFET Features
RoHS Compliant Max rDS(on) = 53 mΩ at VGS = -10 V, ID = -4.4 A Max rDS(on) = 64 mΩ at VGS = -6 V, ID = -4 A Very low Rds-on in Mid-Voltage P-Channel silicon technology optimized for low Qg 100% UIL tested This product is optimized for fast switching applications as well as load switch applications
FDMS86263P MOSFET Applications
Synchronous Rectification Applications UIS Rating System Active Clamp Switch Linear Switching Applications Totem Pole Switching Circuits Ground-Connected Loads
The P-Channel MOSFET FDMS86263P presents the circuit designer with a fresh choice that can streamline the circuitry while enhancing performance and parts usage. This device has very low on-resistance in mid-voltage P-Channel silicon technology and a wide operating temperature of -55 to 150 ℃.
FDMS86263P MOSFET Features
RoHS Compliant Max rDS(on) = 53 mΩ at VGS = -10 V, ID = -4.4 A Max rDS(on) = 64 mΩ at VGS = -6 V, ID = -4 A Very low Rds-on in Mid-Voltage P-Channel silicon technology optimized for low Qg 100% UIL tested This product is optimized for fast switching applications as well as load switch applications
FDMS86263P MOSFET Applications
Synchronous Rectification Applications UIS Rating System Active Clamp Switch Linear Switching Applications Totem Pole Switching Circuits Ground-Connected Loads
FDMS86263P More Descriptions
PT5 150/25V Pch Power Trench MOSFET - 8LD,PQFN,JEDEC MO-240 AA,5.0X6.0MM
P-Channel PowerTrench® MOSFET -150V, -22A, 53mΩ
Trans MOSFET P-CH 150V 22A 8-Pin PQFN T/R - Tape and Reel
FDMS86263P Series -150 V 4.4 A 53 mOhm P-Ch PowerTrench Mosfet - Power56
MOSFET, P-CH, -150V, -22A, POWER 56-8; Transistor Polarity:P Channel; Continuous Drain Current Id:-22A; Source Voltage Vds:-150V; On Resistance
Power Field-Effect Transistor, 4.4A I(D), 150V, 0.053ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
This P-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® technology. This very high density process is especially tailored to minimize on-state resistance and optimized for superior switching performance.
MOSFET, P-CH, -150V, -22A, POWER 56-8; Transistor Polarity: P Channel; Continuous Drain Current Id: -22A; Drain Source Voltage Vds: -150V; On Resistance Rds(on): 0.042ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -2.9V; Power Dissipation Pd: 104W; Transistor Case Style: Power 56; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: PowerTrench Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
P-Channel PowerTrench® MOSFET -150V, -22A, 53mΩ
Trans MOSFET P-CH 150V 22A 8-Pin PQFN T/R - Tape and Reel
FDMS86263P Series -150 V 4.4 A 53 mOhm P-Ch PowerTrench Mosfet - Power56
MOSFET, P-CH, -150V, -22A, POWER 56-8; Transistor Polarity:P Channel; Continuous Drain Current Id:-22A; Source Voltage Vds:-150V; On Resistance
Power Field-Effect Transistor, 4.4A I(D), 150V, 0.053ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
This P-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® technology. This very high density process is especially tailored to minimize on-state resistance and optimized for superior switching performance.
MOSFET, P-CH, -150V, -22A, POWER 56-8; Transistor Polarity: P Channel; Continuous Drain Current Id: -22A; Drain Source Voltage Vds: -150V; On Resistance Rds(on): 0.042ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -2.9V; Power Dissipation Pd: 104W; Transistor Case Style: Power 56; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: PowerTrench Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
The three parts on the right have similar specifications to FDMS86263P.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeSubcategoryTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)JESD-30 CodeNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageJEDEC-95 CodeGate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxDrain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Max Junction Temperature (Tj)HeightLengthWidthRoHS StatusAvalanche Energy Rating (Eas)Terminal FinishLead FreeRadiation HardeningView Compare
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FDMS86263PACTIVE (Last Updated: 1 day ago)16 WeeksTinSurface MountSurface Mount8-PowerTDFN868.1mgSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®2017e3yesActive1 (Unlimited)5EAR99Other TransistorsMOSFET (Metal Oxide)DUALFLATNOT SPECIFIEDnot_compliantNOT SPECIFIEDR-PDSO-F5112.5W Ta 104W TcSingleENHANCEMENT MODE104WDRAIN17 nsP-ChannelSWITCHING53m Ω @ 4.4A, 10V4V @ 250μA3905pF @ 75V4.4A Ta 22A Tc63nC @ 10V10ns150V6V 10V±25V14 ns37 ns-4.4A-2.9VMO-240AA25V22A0.053Ohm-150V70A150°C1.1mm5mm5.85mmROHS3 Compliant-----
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ACTIVE (Last Updated: 3 days ago)13 WeeksTinSurface MountSurface Mount8-PowerTDFN856.5mgSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®2010e3yesActive1 (Unlimited)5EAR99FET General Purpose PowerMOSFET (Metal Oxide)DUALNO LEADNOT SPECIFIEDnot_compliantNOT SPECIFIEDR-PDSO-N5112.7W Ta 156W TcSingleENHANCEMENT MODE-DRAIN43 nsN-ChannelSWITCHING1.65m Ω @ 32A, 10V4.5V @ 250μA11530pF @ 30V32A Ta 155A Tc154nC @ 10V27ns-8V 10V±20V11 ns42 ns155A-MO-240AA20V32A-60V320A-1.05mm5.1mm6.25mmROHS3 Compliant937 mJ---
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ACTIVE, NOT REC (Last Updated: 2 days ago)6 Weeks-Surface MountSurface Mount8-PowerTDFN856.5mg--55°C~175°C TJTape & Reel (TR)PowerTrench®2017e3yesNot For New Designs1 (Unlimited)-EAR99-MOSFET (Metal Oxide)--260not_compliantNOT SPECIFIED---3.3W Ta 180W TcSingle----N-Channel-0.65m Ω @ 55A, 10V3V @ 750μA22610pF @ 15V55A Ta 423A Tc285nC @ 10V-30V4.5V 10V±20V--423A-----------ROHS3 Compliant-Tin (Sn)Lead Free-
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ACTIVE (Last Updated: 2 days ago)13 Weeks-Surface MountSurface Mount8-PowerTDFN868.1mgSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®-e3yesActive1 (Unlimited)5EAR99FET General Purpose PowerMOSFET (Metal Oxide)DUALFLAT---R-PDSO-F51-2.5W Ta 96W TcSingleENHANCEMENT MODE96WDRAIN28 nsN-ChannelSWITCHING4.8m Ω @ 17A, 10V4.5V @ 250μA6290pF @ 40V17A Ta 50A Tc95nC @ 10V23ns-8V 10V±20V9 ns35 ns17A-MO-240AA20V50A-80V--1.05mm5.1mm5.85mmROHS3 Compliant-Tin (Sn)Lead FreeNo
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