FDMS86255

Fairchild/ON Semiconductor FDMS86255

Part Number:
FDMS86255
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2478412-FDMS86255
Description:
MOSFET N-CH 150V 8-MLP
ECAD Model:
Datasheet:
FDMS86255

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Specifications
Fairchild/ON Semiconductor FDMS86255 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDMS86255.
  • Lifecycle Status
    ACTIVE (Last Updated: 1 day ago)
  • Factory Lead Time
    13 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-PowerTDFN
  • Number of Pins
    8
  • Weight
    56.5mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    PowerTrench®
  • Published
    2010
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    5
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    NO LEAD
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Reach Compliance Code
    not_compliant
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • JESD-30 Code
    R-PDSO-N5
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    2.7W Ta 113W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    2.7W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    21 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    12.4m Ω @ 10A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    4480pF @ 75V
  • Current - Continuous Drain (Id) @ 25°C
    10A Ta 45A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    63nC @ 10V
  • Rise Time
    10ns
  • Drive Voltage (Max Rds On,Min Rds On)
    6V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    12 ns
  • Turn-Off Delay Time
    28 ns
  • Continuous Drain Current (ID)
    10A
  • JEDEC-95 Code
    MO-240AA
  • Gate to Source Voltage (Vgs)
    20V
  • Drain Current-Max (Abs) (ID)
    45A
  • Drain to Source Breakdown Voltage
    150V
  • Max Junction Temperature (Tj)
    150°C
  • Height
    1.1mm
  • Length
    5.1mm
  • Width
    6.25mm
  • RoHS Status
    ROHS3 Compliant
Description
FDMS86255 Description   The N-channel MOSFET FDMS86255 uses advanced PowerTritch manufacturing processes, combined with shielded grid technology. The process has been optimized for on-resistance, but it still maintains excellent switching performance.   FDMS86255 Features   Shielded Gate MOSFET Technology Max rDS(on) = 12.4 mΩ at VGS = 10 V, ID = 10 A Max rDS(on) = 15.5 mΩ at VGS = 6 V, ID = 8 A Advanced Package and Silicon combination for low rDS(on) and high efficiency Next generation enhanced body diode technology, engineered for soft recovery MSL1 robust package design 100% UIL tested RoHS Compliant   FDMS86255 Applications This product is general usage and suitable for many different applications  
FDMS86255 More Descriptions
N-Channel Shielded Gate PowerTrench® MOSFET 150V, 45A, 12.4mΩ
PT5 150V/20V Nch PowerTrench MOSFET - 8LD, PQFN, POWERCLIP SINGLE, JEDEC, MO-240, VARIATION AA, 5.
MOSFET N-CH 150V 8-MLP / Trans MOSFET N-CH 150V 10A 8-Pin QFN EP T/R
FDMS86255 Series 150 V 10 A 12.4 mOhm N-Ch PowerTrench Mosfet - Power56
MOSFET, N-CH, 150V, 45A, POWER 56-8; Transistor Polarity:N Channel; Continuous Drain Current Id:45A; Source Voltage Vds:150V; On Resistance
Power Field-Effect Transistor, 10A I(D), 150V, 0.0124ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance.
Product Comparison
The three parts on the right have similar specifications to FDMS86255.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Subcategory
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Drain Current-Max (Abs) (ID)
    Drain to Source Breakdown Voltage
    Max Junction Temperature (Tj)
    Height
    Length
    Width
    RoHS Status
    Threshold Voltage
    Pulsed Drain Current-Max (IDM)
    Avalanche Energy Rating (Eas)
    FET Feature
    REACH SVHC
    Radiation Hardening
    Lead Free
    Contact Plating
    Drain-source On Resistance-Max
    View Compare
  • FDMS86255
    FDMS86255
    ACTIVE (Last Updated: 1 day ago)
    13 Weeks
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    56.5mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    2010
    e3
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    Tin (Sn)
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    NO LEAD
    NOT SPECIFIED
    not_compliant
    NOT SPECIFIED
    R-PDSO-N5
    1
    1
    2.7W Ta 113W Tc
    Single
    ENHANCEMENT MODE
    2.7W
    DRAIN
    21 ns
    N-Channel
    SWITCHING
    12.4m Ω @ 10A, 10V
    4V @ 250μA
    4480pF @ 75V
    10A Ta 45A Tc
    63nC @ 10V
    10ns
    6V 10V
    ±20V
    12 ns
    28 ns
    10A
    MO-240AA
    20V
    45A
    150V
    150°C
    1.1mm
    5.1mm
    6.25mm
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • FDMS8570SDC
    LAST SHIPMENTS (Last Updated: 1 week ago)
    -
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    90mg
    SILICON
    -55°C~150°C TJ
    Digi-Reel®
    PowerTrench®, SyncFET™
    2017
    e3
    yes
    Obsolete
    1 (Unlimited)
    5
    EAR99
    Tin (Sn)
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    FLAT
    -
    -
    -
    R-PDSO-F5
    1
    -
    3.3W Ta 59W Tc
    Single
    ENHANCEMENT MODE
    59W
    DRAIN
    11 ns
    N-Channel
    SWITCHING
    2.8m Ω @ 28A, 10V
    2.2V @ 1mA
    2825pF @ 13V
    28A Ta 60A Tc
    42nC @ 10V
    4ns
    4.5V 10V
    ±12V
    3 ns
    33 ns
    60A
    MO-240AA
    12V
    -
    25V
    -
    -
    -
    -
    RoHS Compliant
    1.5V
    100A
    45 mJ
    Schottky Diode (Body)
    No SVHC
    No
    -
    -
    -
  • FDMS86310
    ACTIVE (Last Updated: 2 days ago)
    13 Weeks
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    68.1mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    -
    e3
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    Tin (Sn)
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    FLAT
    -
    -
    -
    R-PDSO-F5
    1
    -
    2.5W Ta 96W Tc
    Single
    ENHANCEMENT MODE
    96W
    DRAIN
    28 ns
    N-Channel
    SWITCHING
    4.8m Ω @ 17A, 10V
    4.5V @ 250μA
    6290pF @ 40V
    17A Ta 50A Tc
    95nC @ 10V
    23ns
    8V 10V
    ±20V
    9 ns
    35 ns
    17A
    MO-240AA
    20V
    50A
    80V
    -
    1.05mm
    5.1mm
    5.85mm
    ROHS3 Compliant
    -
    -
    -
    -
    -
    No
    Lead Free
    -
    -
  • FDMS0312AS
    ACTIVE (Last Updated: 2 days ago)
    26 Weeks
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    74mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®, SyncFET™
    -
    e3
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    -
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    FLAT
    NOT SPECIFIED
    not_compliant
    NOT SPECIFIED
    R-PDSO-F5
    1
    -
    2.5W Ta 36W Tc
    Single
    ENHANCEMENT MODE
    -
    DRAIN
    10 ns
    N-Channel
    SWITCHING
    5m Ω @ 18A, 10V
    3V @ 1mA
    1815pF @ 15V
    18A Ta 22A Tc
    31nC @ 10V
    2.3ns
    4.5V 10V
    ±20V
    6 ns
    25 ns
    18A
    MO-240AA
    20V
    22A
    30V
    -
    1mm
    6mm
    5mm
    ROHS3 Compliant
    -
    100A
    33 mJ
    -
    -
    -
    -
    Tin
    0.005Ohm
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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