Fairchild/ON Semiconductor FDMS86255
- Part Number:
- FDMS86255
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2478412-FDMS86255
- Description:
- MOSFET N-CH 150V 8-MLP
- Datasheet:
- FDMS86255
Fairchild/ON Semiconductor FDMS86255 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDMS86255.
- Lifecycle StatusACTIVE (Last Updated: 1 day ago)
- Factory Lead Time13 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-PowerTDFN
- Number of Pins8
- Weight56.5mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesPowerTrench®
- Published2010
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations5
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormNO LEAD
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Reach Compliance Codenot_compliant
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- JESD-30 CodeR-PDSO-N5
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max2.7W Ta 113W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation2.7W
- Case ConnectionDRAIN
- Turn On Delay Time21 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs12.4m Ω @ 10A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds4480pF @ 75V
- Current - Continuous Drain (Id) @ 25°C10A Ta 45A Tc
- Gate Charge (Qg) (Max) @ Vgs63nC @ 10V
- Rise Time10ns
- Drive Voltage (Max Rds On,Min Rds On)6V 10V
- Vgs (Max)±20V
- Fall Time (Typ)12 ns
- Turn-Off Delay Time28 ns
- Continuous Drain Current (ID)10A
- JEDEC-95 CodeMO-240AA
- Gate to Source Voltage (Vgs)20V
- Drain Current-Max (Abs) (ID)45A
- Drain to Source Breakdown Voltage150V
- Max Junction Temperature (Tj)150°C
- Height1.1mm
- Length5.1mm
- Width6.25mm
- RoHS StatusROHS3 Compliant
FDMS86255 Description
The N-channel MOSFET FDMS86255 uses advanced PowerTritch manufacturing processes, combined with shielded grid technology. The process has been optimized for on-resistance, but it still maintains excellent switching performance.
FDMS86255 Features
Shielded Gate MOSFET Technology
Max rDS(on) = 12.4 mΩ at VGS = 10 V, ID = 10 A
Max rDS(on) = 15.5 mΩ at VGS = 6 V, ID = 8 A
Advanced Package and Silicon combination for low rDS(on) and high efficiency
Next generation enhanced body diode technology, engineered for soft recovery
MSL1 robust package design
100% UIL tested
RoHS Compliant
FDMS86255 Applications
This product is general usage and suitable for many different applications
FDMS86255 More Descriptions
N-Channel Shielded Gate PowerTrench® MOSFET 150V, 45A, 12.4mΩ
PT5 150V/20V Nch PowerTrench MOSFET - 8LD, PQFN, POWERCLIP SINGLE, JEDEC, MO-240, VARIATION AA, 5.
MOSFET N-CH 150V 8-MLP / Trans MOSFET N-CH 150V 10A 8-Pin QFN EP T/R
FDMS86255 Series 150 V 10 A 12.4 mOhm N-Ch PowerTrench Mosfet - Power56
MOSFET, N-CH, 150V, 45A, POWER 56-8; Transistor Polarity:N Channel; Continuous Drain Current Id:45A; Source Voltage Vds:150V; On Resistance
Power Field-Effect Transistor, 10A I(D), 150V, 0.0124ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance.
PT5 150V/20V Nch PowerTrench MOSFET - 8LD, PQFN, POWERCLIP SINGLE, JEDEC, MO-240, VARIATION AA, 5.
MOSFET N-CH 150V 8-MLP / Trans MOSFET N-CH 150V 10A 8-Pin QFN EP T/R
FDMS86255 Series 150 V 10 A 12.4 mOhm N-Ch PowerTrench Mosfet - Power56
MOSFET, N-CH, 150V, 45A, POWER 56-8; Transistor Polarity:N Channel; Continuous Drain Current Id:45A; Source Voltage Vds:150V; On Resistance
Power Field-Effect Transistor, 10A I(D), 150V, 0.0124ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance.
The three parts on the right have similar specifications to FDMS86255.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)JESD-30 CodeNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)JEDEC-95 CodeGate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain to Source Breakdown VoltageMax Junction Temperature (Tj)HeightLengthWidthRoHS StatusThreshold VoltagePulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)FET FeatureREACH SVHCRadiation HardeningLead FreeContact PlatingDrain-source On Resistance-MaxView Compare
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FDMS86255ACTIVE (Last Updated: 1 day ago)13 WeeksSurface MountSurface Mount8-PowerTDFN856.5mgSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®2010e3yesActive1 (Unlimited)5EAR99Tin (Sn)FET General Purpose PowerMOSFET (Metal Oxide)DUALNO LEADNOT SPECIFIEDnot_compliantNOT SPECIFIEDR-PDSO-N5112.7W Ta 113W TcSingleENHANCEMENT MODE2.7WDRAIN21 nsN-ChannelSWITCHING12.4m Ω @ 10A, 10V4V @ 250μA4480pF @ 75V10A Ta 45A Tc63nC @ 10V10ns6V 10V±20V12 ns28 ns10AMO-240AA20V45A150V150°C1.1mm5.1mm6.25mmROHS3 Compliant----------
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LAST SHIPMENTS (Last Updated: 1 week ago)-Surface MountSurface Mount8-PowerTDFN890mgSILICON-55°C~150°C TJDigi-Reel®PowerTrench®, SyncFET™2017e3yesObsolete1 (Unlimited)5EAR99Tin (Sn)FET General Purpose PowerMOSFET (Metal Oxide)DUALFLAT---R-PDSO-F51-3.3W Ta 59W TcSingleENHANCEMENT MODE59WDRAIN11 nsN-ChannelSWITCHING2.8m Ω @ 28A, 10V2.2V @ 1mA2825pF @ 13V28A Ta 60A Tc42nC @ 10V4ns4.5V 10V±12V3 ns33 ns60AMO-240AA12V-25V----RoHS Compliant1.5V100A45 mJSchottky Diode (Body)No SVHCNo---
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ACTIVE (Last Updated: 2 days ago)13 WeeksSurface MountSurface Mount8-PowerTDFN868.1mgSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®-e3yesActive1 (Unlimited)5EAR99Tin (Sn)FET General Purpose PowerMOSFET (Metal Oxide)DUALFLAT---R-PDSO-F51-2.5W Ta 96W TcSingleENHANCEMENT MODE96WDRAIN28 nsN-ChannelSWITCHING4.8m Ω @ 17A, 10V4.5V @ 250μA6290pF @ 40V17A Ta 50A Tc95nC @ 10V23ns8V 10V±20V9 ns35 ns17AMO-240AA20V50A80V-1.05mm5.1mm5.85mmROHS3 Compliant-----NoLead Free--
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ACTIVE (Last Updated: 2 days ago)26 WeeksSurface MountSurface Mount8-PowerTDFN874mgSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®, SyncFET™-e3yesActive1 (Unlimited)5EAR99-FET General Purpose PowerMOSFET (Metal Oxide)DUALFLATNOT SPECIFIEDnot_compliantNOT SPECIFIEDR-PDSO-F51-2.5W Ta 36W TcSingleENHANCEMENT MODE-DRAIN10 nsN-ChannelSWITCHING5m Ω @ 18A, 10V3V @ 1mA1815pF @ 15V18A Ta 22A Tc31nC @ 10V2.3ns4.5V 10V±20V6 ns25 ns18AMO-240AA20V22A30V-1mm6mm5mmROHS3 Compliant-100A33 mJ----Tin0.005Ohm
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