Fairchild/ON Semiconductor FDMS86252L

Name: FDMS86252L
Brand: Fairchild/ON Semiconductor
SKU: 3586095-FDMS86252L
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FDMS86252L

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 3586095-FDMS86252L

Description:: MOSFET N-CH 150V 8-MLP

ECAD Model:

Datasheet:: FDMS86252L

Specifications

Fairchild/ON Semiconductor FDMS86252L technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDMS86252L.

Lifecycle Status
ACTIVE (Last Updated: 1 day ago)
Factory Lead Time
8 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-PowerTDFN
Number of Pins
8
Weight
74mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
PowerTrench®
Published
2017
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
5
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-PDSO-F5
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
2.5W Ta 50W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
2.5W
Case Connection
DRAIN
Turn On Delay Time
6.8 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
56m Ω @ 4.4A, 10V
Vgs(th) (Max) @ Id
3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1335pF @ 75V
Current - Continuous Drain (Id) @ 25°C
4.4A Ta
Gate Charge (Qg) (Max) @ Vgs
21nC @ 10V
Rise Time
1.4ns
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
2.9 ns
Turn-Off Delay Time
19 ns
Continuous Drain Current (ID)
4.4A
JEDEC-95 Code
MO-240AA
Gate to Source Voltage (Vgs)
20V
Drain-source On Resistance-Max
0.056Ohm
Drain to Source Breakdown Voltage
150V
Pulsed Drain Current-Max (IDM)
30A
Avalanche Energy Rating (Eas)
73 mJ
Height
1.05mm
Length
5mm
Width
5.85mm
RoHS Status
ROHS3 Compliant

Description

FDMS86252L Description
The N-channel MOSFET uses advanced PowerTritch manufacturing processes, combined with shielded grid technology. The process has been optimized for on-resistance, but it still maintains excellent switching performance. FDMS86252L Features Shielded Gate MOSFET Technology Max rDS(on) = 56 mΩ at VGS = 10 V, ID = 4.4 A Max rDS(on) = 71 mΩ at VGS = 6 V, ID = 3.8 A Max rDS(on) = 75 mΩ at VGS = 4.5 V, ID = 3.7 A Advanced package and silicon combination for low rDS(on) and high efficiency Next generation enhanced body diode technology, engineered for soft recovery MSL1 robust package design 100% UIL tested RoHS Compliant
FDMS86252L Applications
This product is general usage and suitable for many different applications

FDMS86252L More Descriptions

N-Channel Shielded Gate PowerTrench® MOSFET 150V, 12A, 56mΩ
FDMS86252L Series 150 V 12 A 56 mOhm N-Ch PowerTrench Mosfet - Power56
MOSFET, N-CH, 150V, 12A, POWER 56-8; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Source Voltage Vds:150V; On Resistance
Power Field-Effect Transistor, 4.4A I(D), 150V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance.
MOSFET, N-CH, 150V, 12A, POWER 56-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 12A; Drain Source Voltage Vds: 150V; On Resistance Rds(on): 0.046ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.5V; Power Dissipation Pd: 50W; Transistor Case Style: Power 56; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: PowerTrench Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)

Product Comparison

The three parts on the right have similar specifications to FDMS86252L.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Subcategory

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Number of Elements

Number of Channels

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain-source On Resistance-Max

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Avalanche Energy Rating (Eas)

Height

Length

Width

RoHS Status

Lead Free

Drain Current-Max (Abs) (ID)

Radiation Hardening

Contact Plating

View Compare
FDMS86252L

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 1 day ago)

8 Weeks

Surface Mount

Surface Mount

8-PowerTDFN

8

74mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®

2017

e3

yes

Active

1 (Unlimited)

5

EAR99

Tin (Sn)

FET General Purpose Power

MOSFET (Metal Oxide)

DUAL

FLAT

NOT SPECIFIED

not_compliant

NOT SPECIFIED

R-PDSO-F5

1

1

2.5W Ta 50W Tc

Single

ENHANCEMENT MODE

2.5W

DRAIN

6.8 ns

N-Channel

SWITCHING

56m Ω @ 4.4A, 10V

3V @ 250μA

1335pF @ 75V

4.4A Ta

21nC @ 10V

1.4ns

4.5V 10V

±20V

2.9 ns

19 ns

4.4A

MO-240AA

20V

0.056Ohm

150V

30A

73 mJ

1.05mm

5mm

5.85mm

ROHS3 Compliant

-

-

-

-

-
FDMS86550ET60

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 3 days ago)

12 Weeks

Surface Mount

Surface Mount

8-PowerTDFN

8

56.5mg

-

-55°C~175°C TJ

Tape & Reel (TR)

PowerTrench®

-

e3

yes

Active

1 (Unlimited)

-

EAR99

Tin (Sn)

-

MOSFET (Metal Oxide)

-

-

260

not_compliant

NOT SPECIFIED

-

-

1

3.3W Ta 187W Tc

Single

-

-

-

43 ns

N-Channel

-

1.65m Ω @ 32A, 10V

4.5V @ 250μA

8235pF @ 30V

32A Ta 245A Tc

154nC @ 10V

27ns

8V 10V

±20V

11 ns

42 ns

245A

-

20V

-

60V

-

-

-

-

-

ROHS3 Compliant

Lead Free

-

-

-

FDMS86252L vs FDMS86550ET60
FDMS86310

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 2 days ago)

13 Weeks

Surface Mount

Surface Mount

8-PowerTDFN

8

68.1mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®

-

e3

yes

Active

1 (Unlimited)

5

EAR99

Tin (Sn)

FET General Purpose Power

MOSFET (Metal Oxide)

DUAL

FLAT

-

-

-

R-PDSO-F5

1

-

2.5W Ta 96W Tc

Single

ENHANCEMENT MODE

96W

DRAIN

28 ns

N-Channel

SWITCHING

4.8m Ω @ 17A, 10V

4.5V @ 250μA

6290pF @ 40V

17A Ta 50A Tc

95nC @ 10V

23ns

8V 10V

±20V

9 ns

35 ns

17A

MO-240AA

20V

-

80V

-

-

1.05mm

5.1mm

5.85mm

ROHS3 Compliant

Lead Free

50A

No

-

FDMS86252L vs FDMS86310
FDMS0312AS

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 2 days ago)

26 Weeks

Surface Mount

Surface Mount

8-PowerTDFN

8

74mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®, SyncFET™

-

e3

yes

Active

1 (Unlimited)

5

EAR99

-

FET General Purpose Power

MOSFET (Metal Oxide)

DUAL

FLAT

NOT SPECIFIED

not_compliant

NOT SPECIFIED

R-PDSO-F5

1

-

2.5W Ta 36W Tc

Single

ENHANCEMENT MODE

-

DRAIN

10 ns

N-Channel

SWITCHING

5m Ω @ 18A, 10V

3V @ 1mA

1815pF @ 15V

18A Ta 22A Tc

31nC @ 10V

2.3ns

4.5V 10V

±20V

6 ns

25 ns

18A

MO-240AA

20V

0.005Ohm

30V

100A

33 mJ

1mm

6mm

5mm

ROHS3 Compliant

-

22A

-

Tin

FDMS86252L vs FDMS0312AS

Certification

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FDMS86252L Specification

Part Number	Manufacturers	Description	Stock	Price
FDMS86252L DISTI #V72:2272_06338197	ON Semiconductor	Trans MOSFET N-CH 150V 4.4A 8-Pin Power 56 EP T/R	2980	1 $1.601 10 $1.2502 25 $1.2469 100 $0.9633 250 $0.867 500 $0.8434 1000 $0.6425
FDMS86252L DISTI #V36:1790_06338197	ON Semiconductor	Trans MOSFET N-CH 150V 4.4A 8-Pin Power 56 EP T/R	0
FDMS86252L DISTI #FDMS86252LCT-ND	ON Semiconductor	MOSFET N-CH 150V 8-MLP RoHS: Compliant	4236	1 $1.61 10 $1.436 100 $1.1194 500 $0.92468 1000 $0.73001
FDMS86252L DISTI #FDMS86252LDKR-ND	ON Semiconductor	MOSFET N-CH 150V 8-MLP RoHS: Compliant	4236	1 $1.61 10 $1.436 100 $1.1194 500 $0.92468 1000 $0.73001
FDMS86252L DISTI #FDMS86252LTR-ND	ON Semiconductor	MOSFET N-CH 150V 8-MLP RoHS: Compliant	3000	3000 $0.6615 6000 $0.62843 15000 $0.6048
FDMS86252L DISTI #31926290	ON Semiconductor	Trans MOSFET N-CH 150V 4.4A 8-Pin Power 56 EP T/R	12000	3000 $0.6527
FDMS86252L DISTI #32727458	ON Semiconductor	Trans MOSFET N-CH 150V 4.4A 8-Pin Power 56 EP T/R	3000	3000 $0.9266
FDMS86252L DISTI #32728662	ON Semiconductor	Trans MOSFET N-CH 150V 4.4A 8-Pin Power 56 EP T/R	2980	12 $1.601
FDMS86252L DISTI #FDMS86252L	ON Semiconductor	Trans MOSFET N-CH 150V 12A 8-Pin Power 56 T/R - Ta RoHS: Compliant	0	3000 $0.5879 6000 $0.5839 12000 $0.5759 18000 $0.5689 30000 $0.5549
FDMS86252L DISTI #FDMS86252L	ON Semiconductor	Trans MOSFET N-CH 150V 12A 8-Pin Power 56 T/R (Alt RoHS: Compliant	0	3000 $0.9 6000 $0.86538 9000 $0.83333 15000 $0.80357 30000 $0.77586 75000 $0.75 150000 $0.7377
FDMS86252L DISTI #FDMS86252L	ON Semiconductor	Trans MOSFET N-CH 150V 12A 8-Pin Power 56 T/R (Alt RoHS: Compliant	0	3000 $0.8689 6000 $0.7109 12000 $0.6519 18000 $0.6019 30000 $0.5589
FDMS86252L DISTI #08X5818	ON Semiconductor	FET 150V 56.0 MOHM PQFN56 / REEL	0	1 $0.774 3000 $0.743 6000 $0.675 12000 $0.608 18000 $0.585 30000 $0.572
FDMS86252L DISTI #46AC0798	ON Semiconductor	MOSFET, N-CH, 150V, 12A, POWER 56-8, Transistor P	5519	1 $1.48 10 $1.27 25 $1.17 50 $1.08 100 $0.978 250 $0.921 500 $0.865 1000 $0.682
FDMS86252L DISTI #	ON Semiconductor	FDMS86252L Series 150 V 12 A 56 mOhm N-Ch PowerTre RoHS: Compliant	3000	3000 $0.565
FDMS86252L DISTI #512-FDMS86252L	ON Semiconductor	MOSFET FET 150V 56.0 MOHM PQFN56 RoHS: Compliant	20713	1 $1.47 10 $1.26 100 $0.968 500 $0.856 1000 $0.675 3000 $0.599 9000 $0.577
FDMS86252L DISTI #8648461P	ON Semiconductor	MOSFET N-CH 150V 12A SHIELDED GATE PQFN8, RL	2795	25 $0.756 250 $0.58 1000 $0.424 3000 $0.412
FDMS86252L DISTI #2825178	ON Semiconductor	MOSFET, N-CH, 150V, 12A, POWER 56-8 RoHS: Compliant	5509	5 $2.41 25 $2.06 100 $1.41 250 $1.16 500 $0.947 1000 $0.873 5000 $0.851
FDMS86252L DISTI #2825178	ON Semiconductor	MOSFET, N-CH, 150V, 12A, POWER 56-8	7014	1 $1.31 10 $1.03 100 $0.753 250 $0.71 500 $0.667
FDMS86252L DISTI #XSFP00000110918	Fairchild Semiconductor Corporation	RoHS: Compliant	6000	3000 $0.8071 6000 $0.7533

FDMS862~~(11)~~
FDMS86~~(74)~~
FDMS8~~(71)~~
FDMS~~(70)~~
FDM~~(86)~~

Fairchild/ON Semiconductor FDMS86252L

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