Fairchild/ON Semiconductor FDMS8622

Name: FDMS8622
Brand: Fairchild/ON Semiconductor
SKU: 2479277-FDMS8622
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FDMS8622

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2479277-FDMS8622

Description:: MOSFET N-CH 100V 4.8A 8-PQFN

ECAD Model:

Datasheet:: FDMS8622

Specifications

Fairchild/ON Semiconductor FDMS8622 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDMS8622.

Lifecycle Status
ACTIVE (Last Updated: 1 day ago)
Factory Lead Time
8 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-PowerTDFN
Number of Pins
8
Weight
74mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
PowerTrench®
Published
2010
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
5
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Additional Feature
ULTRA-LOW RESISTANCE
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
JESD-30 Code
R-PDSO-N5
Number of Elements
1
Power Dissipation-Max
2.5W Ta 31W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
2.5W
Case Connection
DRAIN
Turn On Delay Time
5.7 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
56m Ω @ 4.8A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
400pF @ 50V
Current - Continuous Drain (Id) @ 25°C
4.8A Ta 16.5A Tc
Gate Charge (Qg) (Max) @ Vgs
7nC @ 10V
Rise Time
1.7ns
Drive Voltage (Max Rds On,Min Rds On)
6V 10V
Vgs (Max)
±20V
Fall Time (Typ)
2.1 ns
Turn-Off Delay Time
10.2 ns
Continuous Drain Current (ID)
4.8A
JEDEC-95 Code
MO-240AA
Gate to Source Voltage (Vgs)
20V
Drain-source On Resistance-Max
0.056Ohm
Drain to Source Breakdown Voltage
100V
Pulsed Drain Current-Max (IDM)
30A
Height
1.05mm
Length
5mm
Width
6mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant

Description

FDMS8622 Description
FDMS8622 is a 100v N-Channel Power Trench? MOSFET. The N-Channel MOSFET FDMS8622 is produced using an advanced Power Trench? process that has been optimized for rDS(on), switching performance, and ruggedness. The Operating and Storage Temperature Range is between -55 and 150℃. And the MOSFET FDMS8622 is in the Power-56-8 package with 2.5W power dissipation.

FDMS8622 Features
Max rDS(on) = 56 mΩ at VGS = 10 V, ID = 4.8 A
Max rDS(on) = 88 mΩ at VGS = 6 V, ID = 3.9 A
High-performance trench technology for extremely low rDS(on)
High power and current handling capability in a widely used surface mount package
100% UIL Tested
Termination is Lead-free and RoHS Compliant

FDMS8622 Applications
DC-DC Merchant Power Supply
POE Protection Switch
DC-DC Switch

FDMS8622 More Descriptions

N-Channel Power Trench® MOSFET 100V, 16.5A, 56mΩ
MOSFET, N-CH, 100V, 16.5A, PQFN; Transistor Polarity:N Channel; Continuous Drain Current Id:16.5A; Source Voltage Vds:100V; On Resistance
Power Field-Effect Transistor, 4.8A I(D), 100V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness.
MOSFET, N-CH, 100V, 16.5A, PQFN; Transistor Polarity: N Channel; Continuous Drain Current Id: 16.5A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.045ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 31W; Transistor Case Style: PQFN; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: PowerTrench Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

Product Comparison

The three parts on the right have similar specifications to FDMS8622.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

Subcategory

Technology

Terminal Position

JESD-30 Code

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain-source On Resistance-Max

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Height

Length

Width

Radiation Hardening

RoHS Status

Terminal Form

Threshold Voltage

Avalanche Energy Rating (Eas)

FET Feature

REACH SVHC

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Drain to Source Voltage (Vdss)

Lead Free

Drain Current-Max (Abs) (ID)

View Compare
FDMS8622

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 1 day ago)

8 Weeks

Surface Mount

Surface Mount

8-PowerTDFN

8

74mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®

2010

e3

yes

Active

1 (Unlimited)

5

EAR99

Tin (Sn)

ULTRA-LOW RESISTANCE

FET General Purpose Power

MOSFET (Metal Oxide)

DUAL

R-PDSO-N5

1

2.5W Ta 31W Tc

Single

ENHANCEMENT MODE

2.5W

DRAIN

5.7 ns

N-Channel

SWITCHING

56m Ω @ 4.8A, 10V

4V @ 250μA

400pF @ 50V

4.8A Ta 16.5A Tc

7nC @ 10V

1.7ns

6V 10V

±20V

2.1 ns

10.2 ns

4.8A

MO-240AA

20V

0.056Ohm

100V

30A

1.05mm

5mm

6mm

No

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-
FDMS8570SDC

Fairchild/ON Semiconductor

LAST SHIPMENTS (Last Updated: 1 week ago)

-

Surface Mount

Surface Mount

8-PowerTDFN

8

90mg

SILICON

-55°C~150°C TJ

Digi-Reel®

PowerTrench®, SyncFET™

2017

e3

yes

Obsolete

1 (Unlimited)

5

EAR99

Tin (Sn)

-

FET General Purpose Power

MOSFET (Metal Oxide)

DUAL

R-PDSO-F5

1

3.3W Ta 59W Tc

Single

ENHANCEMENT MODE

59W

DRAIN

11 ns

N-Channel

SWITCHING

2.8m Ω @ 28A, 10V

2.2V @ 1mA

2825pF @ 13V

28A Ta 60A Tc

42nC @ 10V

4ns

4.5V 10V

±12V

3 ns

33 ns

60A

MO-240AA

12V

-

25V

100A

-

-

-

No

RoHS Compliant

FLAT

1.5V

45 mJ

Schottky Diode (Body)

No SVHC

-

-

-

-

-

-

FDMS8622 vs FDMS8570SDC
FDMS8050ET30

Fairchild/ON Semiconductor

ACTIVE, NOT REC (Last Updated: 2 days ago)

6 Weeks

Surface Mount

Surface Mount

8-PowerTDFN

8

56.5mg

-

-55°C~175°C TJ

Tape & Reel (TR)

PowerTrench®

2017

e3

yes

Not For New Designs

1 (Unlimited)

-

EAR99

Tin (Sn)

-

-

MOSFET (Metal Oxide)

-

-

-

3.3W Ta 180W Tc

Single

-

-

-

-

N-Channel

-

0.65m Ω @ 55A, 10V

3V @ 750μA

22610pF @ 15V

55A Ta 423A Tc

285nC @ 10V

-

4.5V 10V

±20V

-

-

423A

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

-

-

-

-

260

not_compliant

NOT SPECIFIED

30V

Lead Free

-

FDMS8622 vs FDMS8050ET30
FDMS86310

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 2 days ago)

13 Weeks

Surface Mount

Surface Mount

8-PowerTDFN

8

68.1mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®

-

e3

yes

Active

1 (Unlimited)

5

EAR99

Tin (Sn)

-

FET General Purpose Power

MOSFET (Metal Oxide)

DUAL

R-PDSO-F5

1

2.5W Ta 96W Tc

Single

ENHANCEMENT MODE

96W

DRAIN

28 ns

N-Channel

SWITCHING

4.8m Ω @ 17A, 10V

4.5V @ 250μA

6290pF @ 40V

17A Ta 50A Tc

95nC @ 10V

23ns

8V 10V

±20V

9 ns

35 ns

17A

MO-240AA

20V

-

80V

-

1.05mm

5.1mm

5.85mm

No

ROHS3 Compliant

FLAT

-

-

-

-

-

-

-

-

Lead Free

50A

FDMS8622 vs FDMS86310