Fairchild/ON Semiconductor FDMS86202
- Part Number:
- FDMS86202
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2482231-FDMS86202
- Description:
- MOSFET N-CH 120V 8MLP
- Datasheet:
- FDMS86202
Fairchild/ON Semiconductor FDMS86202 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDMS86202.
- Lifecycle StatusACTIVE (Last Updated: 15 hours ago)
- Factory Lead Time12 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-PowerTDFN
- Number of Pins8
- Weight56.5mg
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesPowerTrench®
- Published2017
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Number of Channels1
- Power Dissipation-Max2.7W Ta 156W Tc
- Element ConfigurationSingle
- Turn On Delay Time21 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs7.2m Ω @ 13.5A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds4250pF @ 60V
- Current - Continuous Drain (Id) @ 25°C13.5A Ta
- Gate Charge (Qg) (Max) @ Vgs64nC @ 10V
- Rise Time6ns
- Drive Voltage (Max Rds On,Min Rds On)6V 10V
- Vgs (Max)±20V
- Fall Time (Typ)5 ns
- Turn-Off Delay Time27 ns
- Continuous Drain Current (ID)13.5A
- Gate to Source Voltage (Vgs)20V
- Drain Current-Max (Abs) (ID)40A
- Drain to Source Breakdown Voltage120V
- Height1.05mm
- Length5.1mm
- Width6.25mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
FDMS86202 Description
The FDMS86202 N-Channel MOSFET is produced using advanced PowerTrench process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance. The MOSFET is the most common type of transistor today. Their primary use is to control conductivity, or how much electricity can flow, between its source and drain terminals based on the amount of voltage applied to its gate terminal.
FDMS86202 Features
Shielded Gate MOSFET Technology
Advanced Package and Silicon combination for low rDs(on) and high efficiency
MSL1 robust package design
100% UIL tested
RoHS Compliant
FDMS86202 Applications
DC-DC Conversion
Linear power supplies
Switching power supplies
DC-DC converters
Low voltage motor control
The FDMS86202 N-Channel MOSFET is produced using advanced PowerTrench process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance. The MOSFET is the most common type of transistor today. Their primary use is to control conductivity, or how much electricity can flow, between its source and drain terminals based on the amount of voltage applied to its gate terminal.
FDMS86202 Features
Shielded Gate MOSFET Technology
Advanced Package and Silicon combination for low rDs(on) and high efficiency
MSL1 robust package design
100% UIL tested
RoHS Compliant
FDMS86202 Applications
DC-DC Conversion
Linear power supplies
Switching power supplies
DC-DC converters
Low voltage motor control
FDMS86202 More Descriptions
N-Channel Shielded Gate PowerTrench® MOSFET 120V, 64A, 7.2mΩ
Power Field-Effect Transistor, 40A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
N-Channel 120 V 64 A 7.2 mOhm PowerTrench Mosfet - Power-56
PT5 120/20V Nch Power Trench MOSFET - 8LD, PQFN, POWERCLIP SINGLE, JEDEC, MO-240, VARIATION AA, 5.
MOSFET, N-CH, 120V, 64A, PQFN; Transistor Polarity:N Channel; Continuous Drain Current Id:64A; Source Voltage Vds:120V; On Resistance
Embedded - Microcontrollers 1 (Unlimited) 20-LSSOP (0.173, 4.40mm Width) 13 384 x 8 Internal LED, POR, Voltage Detect, WDT Surface Mount Tube 16-Bit MCU 16-bit R8C CISC 4KB Flash 3.3V/5V 20-Pin LSSOP Tube
This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance.
MOSFET, N-CH, 120V, 64A, PQFN; Transistor Polarity: N Channel; Continuous Drain Current Id: 64A; Drain Source Voltage Vds: 120V; On Resistance Rds(on): 0.006ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.1V; Power Dissipation Pd: 156W; Transistor Case Style: PQFN; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: PowerTrench Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
Power Field-Effect Transistor, 40A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
N-Channel 120 V 64 A 7.2 mOhm PowerTrench Mosfet - Power-56
PT5 120/20V Nch Power Trench MOSFET - 8LD, PQFN, POWERCLIP SINGLE, JEDEC, MO-240, VARIATION AA, 5.
MOSFET, N-CH, 120V, 64A, PQFN; Transistor Polarity:N Channel; Continuous Drain Current Id:64A; Source Voltage Vds:120V; On Resistance
Embedded - Microcontrollers 1 (Unlimited) 20-LSSOP (0.173, 4.40mm Width) 13 384 x 8 Internal LED, POR, Voltage Detect, WDT Surface Mount Tube 16-Bit MCU 16-bit R8C CISC 4KB Flash 3.3V/5V 20-Pin LSSOP Tube
This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance.
MOSFET, N-CH, 120V, 64A, PQFN; Transistor Polarity: N Channel; Continuous Drain Current Id: 64A; Drain Source Voltage Vds: 120V; On Resistance Rds(on): 0.006ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.1V; Power Dissipation Pd: 156W; Transistor Case Style: PQFN; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: PowerTrench Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
The three parts on the right have similar specifications to FDMS86202.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)ECCN CodeTerminal FinishSubcategoryTechnologyNumber of ChannelsPower Dissipation-MaxElement ConfigurationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain to Source Breakdown VoltageHeightLengthWidthRadiation HardeningRoHS StatusContact PlatingTransistor Element MaterialNumber of TerminationsTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)JESD-30 CodeNumber of ElementsOperating ModeCase ConnectionTransistor ApplicationJEDEC-95 CodePulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)Power DissipationThreshold VoltageFET FeatureREACH SVHCLead FreeView Compare
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FDMS86202ACTIVE (Last Updated: 15 hours ago)12 WeeksSurface MountSurface Mount8-PowerTDFN856.5mg-55°C~150°C TJTape & Reel (TR)PowerTrench®2017e3yesActive1 (Unlimited)EAR99Tin (Sn)FET General Purpose PowerMOSFET (Metal Oxide)12.7W Ta 156W TcSingle21 nsN-Channel7.2m Ω @ 13.5A, 10V4V @ 250μA4250pF @ 60V13.5A Ta64nC @ 10V6ns6V 10V±20V5 ns27 ns13.5A20V40A120V1.05mm5.1mm6.25mmNoROHS3 Compliant----------------------
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ACTIVE (Last Updated: 3 days ago)13 WeeksSurface MountSurface Mount8-PowerTDFN856.5mg-55°C~150°C TJTape & Reel (TR)PowerTrench®2010e3yesActive1 (Unlimited)EAR99-FET General Purpose PowerMOSFET (Metal Oxide)12.7W Ta 156W TcSingle43 nsN-Channel1.65m Ω @ 32A, 10V4.5V @ 250μA11530pF @ 30V32A Ta 155A Tc154nC @ 10V27ns8V 10V±20V11 ns42 ns155A20V32A60V1.05mm5.1mm6.25mm-ROHS3 CompliantTinSILICON5DUALNO LEADNOT SPECIFIEDnot_compliantNOT SPECIFIEDR-PDSO-N51ENHANCEMENT MODEDRAINSWITCHINGMO-240AA320A937 mJ-----
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LAST SHIPMENTS (Last Updated: 1 week ago)-Surface MountSurface Mount8-PowerTDFN890mg-55°C~150°C TJDigi-Reel®PowerTrench®, SyncFET™2017e3yesObsolete1 (Unlimited)EAR99Tin (Sn)FET General Purpose PowerMOSFET (Metal Oxide)-3.3W Ta 59W TcSingle11 nsN-Channel2.8m Ω @ 28A, 10V2.2V @ 1mA2825pF @ 13V28A Ta 60A Tc42nC @ 10V4ns4.5V 10V±12V3 ns33 ns60A12V-25V---NoRoHS Compliant-SILICON5DUALFLAT---R-PDSO-F51ENHANCEMENT MODEDRAINSWITCHINGMO-240AA100A45 mJ59W1.5VSchottky Diode (Body)No SVHC-
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ACTIVE (Last Updated: 2 days ago)13 WeeksSurface MountSurface Mount8-PowerTDFN868.1mg-55°C~150°C TJTape & Reel (TR)PowerTrench®-e3yesActive1 (Unlimited)EAR99Tin (Sn)FET General Purpose PowerMOSFET (Metal Oxide)-2.5W Ta 96W TcSingle28 nsN-Channel4.8m Ω @ 17A, 10V4.5V @ 250μA6290pF @ 40V17A Ta 50A Tc95nC @ 10V23ns8V 10V±20V9 ns35 ns17A20V50A80V1.05mm5.1mm5.85mmNoROHS3 Compliant-SILICON5DUALFLAT---R-PDSO-F51ENHANCEMENT MODEDRAINSWITCHINGMO-240AA--96W---Lead Free
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