FDMS86202

Fairchild/ON Semiconductor FDMS86202

Part Number:
FDMS86202
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2482231-FDMS86202
Description:
MOSFET N-CH 120V 8MLP
ECAD Model:
Datasheet:
FDMS86202

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Specifications
Fairchild/ON Semiconductor FDMS86202 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDMS86202.
  • Lifecycle Status
    ACTIVE (Last Updated: 15 hours ago)
  • Factory Lead Time
    12 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-PowerTDFN
  • Number of Pins
    8
  • Weight
    56.5mg
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    PowerTrench®
  • Published
    2017
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Number of Channels
    1
  • Power Dissipation-Max
    2.7W Ta 156W Tc
  • Element Configuration
    Single
  • Turn On Delay Time
    21 ns
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    7.2m Ω @ 13.5A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    4250pF @ 60V
  • Current - Continuous Drain (Id) @ 25°C
    13.5A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    64nC @ 10V
  • Rise Time
    6ns
  • Drive Voltage (Max Rds On,Min Rds On)
    6V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    5 ns
  • Turn-Off Delay Time
    27 ns
  • Continuous Drain Current (ID)
    13.5A
  • Gate to Source Voltage (Vgs)
    20V
  • Drain Current-Max (Abs) (ID)
    40A
  • Drain to Source Breakdown Voltage
    120V
  • Height
    1.05mm
  • Length
    5.1mm
  • Width
    6.25mm
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
Description
FDMS86202 Description

The FDMS86202 N-Channel MOSFET is produced using advanced PowerTrench process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance. The MOSFET is the most common type of transistor today. Their primary use is to control conductivity, or how much electricity can flow, between its source and drain terminals based on the amount of voltage applied to its gate terminal.
FDMS86202 Features

Shielded Gate MOSFET Technology
Advanced Package and Silicon combination for low rDs(on) and high efficiency
MSL1 robust package design
100% UIL tested
RoHS Compliant
FDMS86202 Applications

DC-DC Conversion
Linear power supplies
Switching power supplies
DC-DC converters
Low voltage motor control
FDMS86202 More Descriptions
N-Channel Shielded Gate PowerTrench® MOSFET 120V, 64A, 7.2mΩ
Power Field-Effect Transistor, 40A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
N-Channel 120 V 64 A 7.2 mOhm PowerTrench Mosfet - Power-56
PT5 120/20V Nch Power Trench MOSFET - 8LD, PQFN, POWERCLIP SINGLE, JEDEC, MO-240, VARIATION AA, 5.
MOSFET, N-CH, 120V, 64A, PQFN; Transistor Polarity:N Channel; Continuous Drain Current Id:64A; Source Voltage Vds:120V; On Resistance
Embedded - Microcontrollers 1 (Unlimited) 20-LSSOP (0.173, 4.40mm Width) 13 384 x 8 Internal LED, POR, Voltage Detect, WDT Surface Mount Tube 16-Bit MCU 16-bit R8C CISC 4KB Flash 3.3V/5V 20-Pin LSSOP Tube
This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance.
MOSFET, N-CH, 120V, 64A, PQFN; Transistor Polarity: N Channel; Continuous Drain Current Id: 64A; Drain Source Voltage Vds: 120V; On Resistance Rds(on): 0.006ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.1V; Power Dissipation Pd: 156W; Transistor Case Style: PQFN; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: PowerTrench Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
Product Comparison
The three parts on the right have similar specifications to FDMS86202.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    ECCN Code
    Terminal Finish
    Subcategory
    Technology
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain Current-Max (Abs) (ID)
    Drain to Source Breakdown Voltage
    Height
    Length
    Width
    Radiation Hardening
    RoHS Status
    Contact Plating
    Transistor Element Material
    Number of Terminations
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Number of Elements
    Operating Mode
    Case Connection
    Transistor Application
    JEDEC-95 Code
    Pulsed Drain Current-Max (IDM)
    Avalanche Energy Rating (Eas)
    Power Dissipation
    Threshold Voltage
    FET Feature
    REACH SVHC
    Lead Free
    View Compare
  • FDMS86202
    FDMS86202
    ACTIVE (Last Updated: 15 hours ago)
    12 Weeks
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    56.5mg
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    2017
    e3
    yes
    Active
    1 (Unlimited)
    EAR99
    Tin (Sn)
    FET General Purpose Power
    MOSFET (Metal Oxide)
    1
    2.7W Ta 156W Tc
    Single
    21 ns
    N-Channel
    7.2m Ω @ 13.5A, 10V
    4V @ 250μA
    4250pF @ 60V
    13.5A Ta
    64nC @ 10V
    6ns
    6V 10V
    ±20V
    5 ns
    27 ns
    13.5A
    20V
    40A
    120V
    1.05mm
    5.1mm
    6.25mm
    No
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • FDMS86550
    ACTIVE (Last Updated: 3 days ago)
    13 Weeks
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    56.5mg
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    2010
    e3
    yes
    Active
    1 (Unlimited)
    EAR99
    -
    FET General Purpose Power
    MOSFET (Metal Oxide)
    1
    2.7W Ta 156W Tc
    Single
    43 ns
    N-Channel
    1.65m Ω @ 32A, 10V
    4.5V @ 250μA
    11530pF @ 30V
    32A Ta 155A Tc
    154nC @ 10V
    27ns
    8V 10V
    ±20V
    11 ns
    42 ns
    155A
    20V
    32A
    60V
    1.05mm
    5.1mm
    6.25mm
    -
    ROHS3 Compliant
    Tin
    SILICON
    5
    DUAL
    NO LEAD
    NOT SPECIFIED
    not_compliant
    NOT SPECIFIED
    R-PDSO-N5
    1
    ENHANCEMENT MODE
    DRAIN
    SWITCHING
    MO-240AA
    320A
    937 mJ
    -
    -
    -
    -
    -
  • FDMS8570SDC
    LAST SHIPMENTS (Last Updated: 1 week ago)
    -
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    90mg
    -55°C~150°C TJ
    Digi-Reel®
    PowerTrench®, SyncFET™
    2017
    e3
    yes
    Obsolete
    1 (Unlimited)
    EAR99
    Tin (Sn)
    FET General Purpose Power
    MOSFET (Metal Oxide)
    -
    3.3W Ta 59W Tc
    Single
    11 ns
    N-Channel
    2.8m Ω @ 28A, 10V
    2.2V @ 1mA
    2825pF @ 13V
    28A Ta 60A Tc
    42nC @ 10V
    4ns
    4.5V 10V
    ±12V
    3 ns
    33 ns
    60A
    12V
    -
    25V
    -
    -
    -
    No
    RoHS Compliant
    -
    SILICON
    5
    DUAL
    FLAT
    -
    -
    -
    R-PDSO-F5
    1
    ENHANCEMENT MODE
    DRAIN
    SWITCHING
    MO-240AA
    100A
    45 mJ
    59W
    1.5V
    Schottky Diode (Body)
    No SVHC
    -
  • FDMS86310
    ACTIVE (Last Updated: 2 days ago)
    13 Weeks
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    68.1mg
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    -
    e3
    yes
    Active
    1 (Unlimited)
    EAR99
    Tin (Sn)
    FET General Purpose Power
    MOSFET (Metal Oxide)
    -
    2.5W Ta 96W Tc
    Single
    28 ns
    N-Channel
    4.8m Ω @ 17A, 10V
    4.5V @ 250μA
    6290pF @ 40V
    17A Ta 50A Tc
    95nC @ 10V
    23ns
    8V 10V
    ±20V
    9 ns
    35 ns
    17A
    20V
    50A
    80V
    1.05mm
    5.1mm
    5.85mm
    No
    ROHS3 Compliant
    -
    SILICON
    5
    DUAL
    FLAT
    -
    -
    -
    R-PDSO-F5
    1
    ENHANCEMENT MODE
    DRAIN
    SWITCHING
    MO-240AA
    -
    -
    96W
    -
    -
    -
    Lead Free
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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