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FDMS86152

Fairchild/ON Semiconductor FDMS86152

Part Number:
FDMS86152
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
3586147-FDMS86152
Description:
MOSFET N-CH 100V 14A POWER56
ECAD Model:
Datasheet:
FDMS86152

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Specifications
Fairchild/ON Semiconductor FDMS86152 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDMS86152.
  • Lifecycle Status
    ACTIVE (Last Updated: 4 days ago)
  • Factory Lead Time
    12 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-PowerTDFN
  • Number of Pins
    8
  • Weight
    56.5mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    PowerTrench®
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    5
  • ECCN Code
    EAR99
  • Terminal Finish
    TIN
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    30
  • JESD-30 Code
    R-PDSO-N5
  • Number of Elements
    1
  • Power Dissipation-Max
    2.7W Ta 125W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    2.7W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    17 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    6m Ω @ 14A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    3370pF @ 50V
  • Current - Continuous Drain (Id) @ 25°C
    14A Ta 45A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    50nC @ 10V
  • Rise Time
    6ns
  • Drive Voltage (Max Rds On,Min Rds On)
    6V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    5 ns
  • Turn-Off Delay Time
    25 ns
  • Continuous Drain Current (ID)
    45A
  • JEDEC-95 Code
    MO-240AA
  • Gate to Source Voltage (Vgs)
    20V
  • Drain-source On Resistance-Max
    0.006Ohm
  • Drain to Source Breakdown Voltage
    100V
  • Pulsed Drain Current-Max (IDM)
    260A
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
Description
FDMS86152 MOSFET Description
The FDMS86152 MOSFET provides 100 V Drain-Source capability and 45 A Drain current (continuous) capacity. This N-Channe MOSFET is enclosed in the MSL1 package with enhanced stability. The FDMS86152 is able to work over -55~150℃ and its low Gate charge, and low on-resistance makes it ideal for DC-DC converters and other power MOSFET solutions

FDMS86152 MOSFET Features
Max rDS(on) = 6 mΩ at VGS = 10 V, ID = 14 A
100% UIL tested
MSL1 robust package design
Advanced Package and Silicon combination for low rDS(on) and high efficiency
Max rDS(on) = 11 mΩ at VGS = 6 V, ID = 11.5 A
RoHS Compliant

FDMS86152 MOSFET Applications
Load Switch
General Power Conversion
Secondary Synchronous Rectifier
Primary DC-DC MOSFET
Circuit Protection
Battery Motor Control
FDMS86152 More Descriptions
N-Channel PowerTrench® MOSFET 100V, 45A, 6mΩ
Single N-Channel 100 V 2.7 W 50 nC PowerTrench Surface Mount Mosfet - POWER 56-8
Power Field-Effect Transistor, 14A I(D), 100V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process thant has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
Product Comparison
The three parts on the right have similar specifications to FDMS86152.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Subcategory
    Technology
    Terminal Position
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Drain-source On Resistance-Max
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Radiation Hardening
    RoHS Status
    Reach Compliance Code
    Number of Channels
    Lead Free
    Published
    Terminal Form
    Threshold Voltage
    Avalanche Energy Rating (Eas)
    FET Feature
    REACH SVHC
    Contact Plating
    Drain Current-Max (Abs) (ID)
    Height
    Length
    Width
    View Compare
  • FDMS86152
    FDMS86152
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 4 days ago)
    12 Weeks
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    56.5mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    e3
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    TIN
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    260
    30
    R-PDSO-N5
    1
    2.7W Ta 125W Tc
    Single
    ENHANCEMENT MODE
    2.7W
    DRAIN
    17 ns
    N-Channel
    SWITCHING
    6m Ω @ 14A, 10V
    4V @ 250μA
    3370pF @ 50V
    14A Ta 45A Tc
    50nC @ 10V
    6ns
    6V 10V
    ±20V
    5 ns
    25 ns
    45A
    MO-240AA
    20V
    0.006Ohm
    100V
    260A
    No
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • FDMS86550ET60
    FDMS86550ET60
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 3 days ago)
    12 Weeks
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    56.5mg
    -
    -55°C~175°C TJ
    Tape & Reel (TR)
    PowerTrench®
    e3
    yes
    Active
    1 (Unlimited)
    -
    EAR99
    Tin (Sn)
    -
    MOSFET (Metal Oxide)
    -
    260
    NOT SPECIFIED
    -
    -
    3.3W Ta 187W Tc
    Single
    -
    -
    -
    43 ns
    N-Channel
    -
    1.65m Ω @ 32A, 10V
    4.5V @ 250μA
    8235pF @ 30V
    32A Ta 245A Tc
    154nC @ 10V
    27ns
    8V 10V
    ±20V
    11 ns
    42 ns
    245A
    -
    20V
    -
    60V
    -
    -
    ROHS3 Compliant
    not_compliant
    1
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    FDMS86152 vs FDMS86550ET60
  • FDMS8570SDC
    FDMS8570SDC
    Fairchild/ON Semiconductor
    LAST SHIPMENTS (Last Updated: 1 week ago)
    -
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    90mg
    SILICON
    -55°C~150°C TJ
    Digi-Reel®
    PowerTrench®, SyncFET™
    e3
    yes
    Obsolete
    1 (Unlimited)
    5
    EAR99
    Tin (Sn)
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    -
    -
    R-PDSO-F5
    1
    3.3W Ta 59W Tc
    Single
    ENHANCEMENT MODE
    59W
    DRAIN
    11 ns
    N-Channel
    SWITCHING
    2.8m Ω @ 28A, 10V
    2.2V @ 1mA
    2825pF @ 13V
    28A Ta 60A Tc
    42nC @ 10V
    4ns
    4.5V 10V
    ±12V
    3 ns
    33 ns
    60A
    MO-240AA
    12V
    -
    25V
    100A
    No
    RoHS Compliant
    -
    -
    -
    2017
    FLAT
    1.5V
    45 mJ
    Schottky Diode (Body)
    No SVHC
    -
    -
    -
    -
    -
    FDMS86152 vs FDMS8570SDC
  • FDMS0312AS
    FDMS0312AS
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 2 days ago)
    26 Weeks
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    74mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®, SyncFET™
    e3
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    -
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    NOT SPECIFIED
    NOT SPECIFIED
    R-PDSO-F5
    1
    2.5W Ta 36W Tc
    Single
    ENHANCEMENT MODE
    -
    DRAIN
    10 ns
    N-Channel
    SWITCHING
    5m Ω @ 18A, 10V
    3V @ 1mA
    1815pF @ 15V
    18A Ta 22A Tc
    31nC @ 10V
    2.3ns
    4.5V 10V
    ±20V
    6 ns
    25 ns
    18A
    MO-240AA
    20V
    0.005Ohm
    30V
    100A
    -
    ROHS3 Compliant
    not_compliant
    -
    -
    -
    FLAT
    -
    33 mJ
    -
    -
    Tin
    22A
    1mm
    6mm
    5mm
    FDMS86152 vs FDMS0312AS
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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