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FDMS86104

Fairchild/ON Semiconductor FDMS86104

Part Number:
FDMS86104
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2482034-FDMS86104
Description:
MOSFET N-CH 100V 7A POWER56
ECAD Model:
Datasheet:
FDMS86104

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Specifications
Fairchild/ON Semiconductor FDMS86104 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDMS86104.
  • Lifecycle Status
    ACTIVE (Last Updated: 3 days ago)
  • Factory Lead Time
    8 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-PowerTDFN
  • Number of Pins
    8
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    PowerTrench®
  • Published
    2006
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    5
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    FLAT
  • JESD-30 Code
    R-PDSO-F5
  • Number of Elements
    1
  • Voltage
    100V
  • Power Dissipation-Max
    2.5W Ta 73W Tc
  • Element Configuration
    Single
  • Current
    16A
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    73W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    8 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    24m Ω @ 7A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    923pF @ 50V
  • Current - Continuous Drain (Id) @ 25°C
    7A Ta 16A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    16nC @ 10V
  • Rise Time
    3.5ns
  • Drive Voltage (Max Rds On,Min Rds On)
    6V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    3.2 ns
  • Turn-Off Delay Time
    14.3 ns
  • Continuous Drain Current (ID)
    16A
  • Threshold Voltage
    2.9V
  • JEDEC-95 Code
    MO-240AA
  • Gate to Source Voltage (Vgs)
    20V
  • Drain-source On Resistance-Max
    0.024Ohm
  • Drain to Source Breakdown Voltage
    100V
  • Avalanche Energy Rating (Eas)
    96 mJ
  • Height
    1.05mm
  • Length
    5mm
  • Width
    6mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
FDMS86104 Description
The FDMS86104 N-Channel MOSFET is produced using On Semiconductor's advanced PowerTrench process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance.

FDMS86104 Features
Shielded Gate MOSFET Technology
Advanced Package and Silicon combination for low rDS(on) and high efficiency
MSL1 robust package design
100% UIL tested
RoHS Compliant
No SVHC
Lead Free

FDMS86104 Applications
DC-DC Conversion
Switching Application
New Energy Vehicle
Photovoltaic Generation
Wind Power Generation
Smart Grid
FDMS86104 More Descriptions
N-Channel Shielded Gate PowerTrench® MOSFET 100V, 16A, 24mΩ
N-Channel 100 V 16 A 24 mOhm Surface Mount PowerTrench® Mosfet - Power56
Power Field-Effect Transistor, 7A I(D), 100V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
MOSFET, N CH, 100V, 16A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.02ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.9V; Power Dissipation Pd:73W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process thant has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
Product Comparison
The three parts on the right have similar specifications to FDMS86104.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Subcategory
    Technology
    Terminal Position
    Terminal Form
    JESD-30 Code
    Number of Elements
    Voltage
    Power Dissipation-Max
    Element Configuration
    Current
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Drain-source On Resistance-Max
    Drain to Source Breakdown Voltage
    Avalanche Energy Rating (Eas)
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Contact Plating
    Weight
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Number of Channels
    Drain Current-Max (Abs) (ID)
    Pulsed Drain Current-Max (IDM)
    View Compare
  • FDMS86104
    FDMS86104
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 3 days ago)
    8 Weeks
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    2006
    e3
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    Tin (Sn)
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    FLAT
    R-PDSO-F5
    1
    100V
    2.5W Ta 73W Tc
    Single
    16A
    ENHANCEMENT MODE
    73W
    DRAIN
    8 ns
    N-Channel
    SWITCHING
    24m Ω @ 7A, 10V
    4V @ 250μA
    923pF @ 50V
    7A Ta 16A Tc
    16nC @ 10V
    3.5ns
    6V 10V
    ±20V
    3.2 ns
    14.3 ns
    16A
    2.9V
    MO-240AA
    20V
    0.024Ohm
    100V
    96 mJ
    1.05mm
    5mm
    6mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • FDMS86550
    FDMS86550
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 3 days ago)
    13 Weeks
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    2010
    e3
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    -
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    NO LEAD
    R-PDSO-N5
    1
    -
    2.7W Ta 156W Tc
    Single
    -
    ENHANCEMENT MODE
    -
    DRAIN
    43 ns
    N-Channel
    SWITCHING
    1.65m Ω @ 32A, 10V
    4.5V @ 250μA
    11530pF @ 30V
    32A Ta 155A Tc
    154nC @ 10V
    27ns
    8V 10V
    ±20V
    11 ns
    42 ns
    155A
    -
    MO-240AA
    20V
    -
    60V
    937 mJ
    1.05mm
    5.1mm
    6.25mm
    -
    -
    ROHS3 Compliant
    -
    Tin
    56.5mg
    NOT SPECIFIED
    not_compliant
    NOT SPECIFIED
    1
    32A
    320A
    FDMS86104 vs FDMS86550
  • FDMS86310
    FDMS86310
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 2 days ago)
    13 Weeks
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    -
    e3
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    Tin (Sn)
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    FLAT
    R-PDSO-F5
    1
    -
    2.5W Ta 96W Tc
    Single
    -
    ENHANCEMENT MODE
    96W
    DRAIN
    28 ns
    N-Channel
    SWITCHING
    4.8m Ω @ 17A, 10V
    4.5V @ 250μA
    6290pF @ 40V
    17A Ta 50A Tc
    95nC @ 10V
    23ns
    8V 10V
    ±20V
    9 ns
    35 ns
    17A
    -
    MO-240AA
    20V
    -
    80V
    -
    1.05mm
    5.1mm
    5.85mm
    -
    No
    ROHS3 Compliant
    Lead Free
    -
    68.1mg
    -
    -
    -
    -
    50A
    -
    FDMS86104 vs FDMS86310
  • FDMS0312AS
    FDMS0312AS
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 2 days ago)
    26 Weeks
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®, SyncFET™
    -
    e3
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    -
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    FLAT
    R-PDSO-F5
    1
    -
    2.5W Ta 36W Tc
    Single
    -
    ENHANCEMENT MODE
    -
    DRAIN
    10 ns
    N-Channel
    SWITCHING
    5m Ω @ 18A, 10V
    3V @ 1mA
    1815pF @ 15V
    18A Ta 22A Tc
    31nC @ 10V
    2.3ns
    4.5V 10V
    ±20V
    6 ns
    25 ns
    18A
    -
    MO-240AA
    20V
    0.005Ohm
    30V
    33 mJ
    1mm
    6mm
    5mm
    -
    -
    ROHS3 Compliant
    -
    Tin
    74mg
    NOT SPECIFIED
    not_compliant
    NOT SPECIFIED
    -
    22A
    100A
    FDMS86104 vs FDMS0312AS
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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