Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > FDMS86101DC
FDMS86101DC

Fairchild/ON Semiconductor FDMS86101DC

Part Number:
FDMS86101DC
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2482288-FDMS86101DC
Description:
MOSFET N-CH 100V 14.5A 8-PQFN
ECAD Model:
Datasheet:
FDMS86101DC

Quick Request Quote

Please send RFQ , We will respond immediately.

Part Number
Quantity
Company
E-mail
Phone
Comments
Specifications
Fairchild/ON Semiconductor FDMS86101DC technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDMS86101DC.
  • Lifecycle Status
    ACTIVE (Last Updated: 2 days ago)
  • Factory Lead Time
    4 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-PowerTDFN
  • Number of Pins
    8
  • Weight
    90mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    Dual Cool™, PowerTrench®
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    5
  • ECCN Code
    EAR99
  • Resistance
    7.5MOhm
  • Terminal Finish
    Tin (Sn)
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Form
    FLAT
  • JESD-30 Code
    R-PDSO-F5
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    3.2W Ta 125W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    125W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    14 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    7.5m Ω @ 14.5A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    3135pF @ 50V
  • Current - Continuous Drain (Id) @ 25°C
    14.5A Ta 60A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    44nC @ 10V
  • Rise Time
    8.2ns
  • Drive Voltage (Max Rds On,Min Rds On)
    6V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    5.5 ns
  • Turn-Off Delay Time
    25 ns
  • Continuous Drain Current (ID)
    14.5A
  • JEDEC-95 Code
    MO-240AA
  • Gate to Source Voltage (Vgs)
    20V
  • Drain Current-Max (Abs) (ID)
    60A
  • Drain to Source Breakdown Voltage
    100V
  • Pulsed Drain Current-Max (IDM)
    200A
  • Max Junction Temperature (Tj)
    150°C
  • Height
    1.05mm
  • Length
    5.1mm
  • Width
    5.85mm
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
Description
The FDMS86101DC MOSFET - N-Channel, POWERTRENCH?, DUAL COOL? 56 Shielded Gate 100 V, 60 A, 7.5 mΩ. This N-Channel MOSFET is made utilizing the cutting-edge POWERTRENCH? process from Fairchild Semiconductor, which combines Shielded Gate technology. The lowest rDS(on) while maintaining good switching performance is now possible because of advancements in both silicon and DUAL COOL? package technologies. This is made possible by the exceptionally low Junction-to-Ambient thermal resistance.

Features
High performance technology for extremely low rDS(on)
100% UIL Tested
RoHS Compliant
Shielded Gate MOSFET Technology
DUAL COOL Top Side Cooling PQFN package
Max rDS(on) = 7.5 m at VGS = 10 V, ID = 14.5 A
Max rDS(on) = 12 m at VGS = 6 V, ID = 11.5 A

Applications
Primary DC?DC MOSFET
Secondary Synchronous Rectifier
Load Switch
Analog Electronics
Audio Power Amplifiers
FDMS86101DC More Descriptions
N-Channel PowerTrench® MOSFET, Dual CoolTM 56, 100V, 60A, 7.5mΩ
TAPE REEL/PT5 100V/20V Nch Dual Cool PowerTrench MOSFET.
MOSFET, N-CH, 100V, 60A, DUAL COOL 56-8; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Source Voltage Vds:100V; On Resistance
Power Field-Effect Transistor, 14.5A I(D), 100V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
Embedded - Microcontrollers 3 (168 Hours) 48-WFQFN Exposed Pad 34 32K x 8 Internal DMA, LVD, POR, PWM, WDT Surface Mount Tray 16-Bit IC MCU 16BIT 512KB FLASH 48HWQFN
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process thatincorporates Shielded Gate technology. Advancements in both silicon and Dual Cool™ package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance.
Product Comparison
The three parts on the right have similar specifications to FDMS86101DC.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Terminal Finish
    Subcategory
    Technology
    Terminal Form
    JESD-30 Code
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Drain Current-Max (Abs) (ID)
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Max Junction Temperature (Tj)
    Height
    Length
    Width
    Radiation Hardening
    RoHS Status
    Lead Free
    Contact Plating
    Published
    Terminal Position
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Avalanche Energy Rating (Eas)
    Threshold Voltage
    FET Feature
    REACH SVHC
    View Compare
  • FDMS86101DC
    FDMS86101DC
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 2 days ago)
    4 Weeks
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    90mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    Dual Cool™, PowerTrench®
    e3
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    7.5MOhm
    Tin (Sn)
    FET General Purpose Power
    MOSFET (Metal Oxide)
    FLAT
    R-PDSO-F5
    1
    1
    3.2W Ta 125W Tc
    Single
    ENHANCEMENT MODE
    125W
    DRAIN
    14 ns
    N-Channel
    SWITCHING
    7.5m Ω @ 14.5A, 10V
    4V @ 250μA
    3135pF @ 50V
    14.5A Ta 60A Tc
    44nC @ 10V
    8.2ns
    6V 10V
    ±20V
    5.5 ns
    25 ns
    14.5A
    MO-240AA
    20V
    60A
    100V
    200A
    150°C
    1.05mm
    5.1mm
    5.85mm
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • FDMS86550
    FDMS86550
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 3 days ago)
    13 Weeks
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    56.5mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    e3
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    -
    -
    FET General Purpose Power
    MOSFET (Metal Oxide)
    NO LEAD
    R-PDSO-N5
    1
    1
    2.7W Ta 156W Tc
    Single
    ENHANCEMENT MODE
    -
    DRAIN
    43 ns
    N-Channel
    SWITCHING
    1.65m Ω @ 32A, 10V
    4.5V @ 250μA
    11530pF @ 30V
    32A Ta 155A Tc
    154nC @ 10V
    27ns
    8V 10V
    ±20V
    11 ns
    42 ns
    155A
    MO-240AA
    20V
    32A
    60V
    320A
    -
    1.05mm
    5.1mm
    6.25mm
    -
    ROHS3 Compliant
    -
    Tin
    2010
    DUAL
    NOT SPECIFIED
    not_compliant
    NOT SPECIFIED
    937 mJ
    -
    -
    -
    FDMS86101DC vs FDMS86550
  • FDMS8570SDC
    FDMS8570SDC
    Fairchild/ON Semiconductor
    LAST SHIPMENTS (Last Updated: 1 week ago)
    -
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    90mg
    SILICON
    -55°C~150°C TJ
    Digi-Reel®
    PowerTrench®, SyncFET™
    e3
    yes
    Obsolete
    1 (Unlimited)
    5
    EAR99
    -
    Tin (Sn)
    FET General Purpose Power
    MOSFET (Metal Oxide)
    FLAT
    R-PDSO-F5
    1
    -
    3.3W Ta 59W Tc
    Single
    ENHANCEMENT MODE
    59W
    DRAIN
    11 ns
    N-Channel
    SWITCHING
    2.8m Ω @ 28A, 10V
    2.2V @ 1mA
    2825pF @ 13V
    28A Ta 60A Tc
    42nC @ 10V
    4ns
    4.5V 10V
    ±12V
    3 ns
    33 ns
    60A
    MO-240AA
    12V
    -
    25V
    100A
    -
    -
    -
    -
    No
    RoHS Compliant
    -
    -
    2017
    DUAL
    -
    -
    -
    45 mJ
    1.5V
    Schottky Diode (Body)
    No SVHC
    FDMS86101DC vs FDMS8570SDC
  • FDMS86310
    FDMS86310
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 2 days ago)
    13 Weeks
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    68.1mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    e3
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    -
    Tin (Sn)
    FET General Purpose Power
    MOSFET (Metal Oxide)
    FLAT
    R-PDSO-F5
    1
    -
    2.5W Ta 96W Tc
    Single
    ENHANCEMENT MODE
    96W
    DRAIN
    28 ns
    N-Channel
    SWITCHING
    4.8m Ω @ 17A, 10V
    4.5V @ 250μA
    6290pF @ 40V
    17A Ta 50A Tc
    95nC @ 10V
    23ns
    8V 10V
    ±20V
    9 ns
    35 ns
    17A
    MO-240AA
    20V
    50A
    80V
    -
    -
    1.05mm
    5.1mm
    5.85mm
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    DUAL
    -
    -
    -
    -
    -
    -
    -
    FDMS86101DC vs FDMS86310
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
Related parts for FDMS86101DC
Popular Search Part Number Related Keywords Search Tags

Latest News

  • cost

    Help you to save your cost and time.

  • package

    Reliable package for your goods.

  • fast

    Fast Reliable Delivery to save time.

  • service

    Quality premium after-sale service.