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FDMS8350L

Fairchild/ON Semiconductor FDMS8350L

Part Number:
FDMS8350L
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
3586110-FDMS8350L
Description:
MOSFET N-CH 40V 47A 8PQFN
ECAD Model:
Datasheet:
FDMS8350L

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Specifications
Fairchild/ON Semiconductor FDMS8350L technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDMS8350L.
  • Lifecycle Status
    ACTIVE (Last Updated: 1 week ago)
  • Factory Lead Time
    12 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-PowerTDFN
  • Number of Pins
    8
  • Weight
    56.5mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    PowerTrench®
  • Published
    2017
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    5
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    NO LEAD
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Reach Compliance Code
    not_compliant
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • JESD-30 Code
    R-PDSO-N5
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    2.7W Ta 113W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Case Connection
    DRAIN
  • Turn On Delay Time
    29 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    0.85m Ω @ 47A, 10V
  • Vgs(th) (Max) @ Id
    3V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    17500pF @ 20V
  • Current - Continuous Drain (Id) @ 25°C
    47A Ta 200A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    242nC @ 10V
  • Rise Time
    22ns
  • Drain to Source Voltage (Vdss)
    40V
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    18 ns
  • Turn-Off Delay Time
    83 ns
  • Continuous Drain Current (ID)
    200A
  • JEDEC-95 Code
    MO-240AA
  • Gate to Source Voltage (Vgs)
    20V
  • Drain Current-Max (Abs) (ID)
    47A
  • Pulsed Drain Current-Max (IDM)
    300A
  • DS Breakdown Voltage-Min
    40V
  • Height
    1.05mm
  • Length
    5.1mm
  • Width
    6.25mm
  • RoHS Status
    ROHS3 Compliant
Description
Description
The FDMS8350L is a 40V, 290A, 0.85mΩ N-Channel PowerTrench? MOSFET. This N-Channel MOSFET is made with the PowerTrench? technology, which has been specifically optimized to reduce on-state resistance while maintaining exceptional switching performance.

Features
● MSL1 robust package design ● 100% UIL tested ● RoHS Compliant ● Max rDS(on) = 0.85 mΩ at VGS = 10 V, ID = 47 A ● Max rDS(on) = 1.2 mΩ at VGS = 4.5 V, ID = 38 A ● Advanced Package and Silicon combination for low rDS(on) and high efficiency

Applications
● Primary DC-DC MOSFET ● Secondary Synchronous Rectifier ● Load Switch ● Inverter ● In Digital Circuit ● High Frequency Amplifier
FDMS8350L More Descriptions
PT8 40V/20V Nch PowerTrench MOSFET - 8LD, PQFN, POWERCLIP SINGLE, JEDEC, MO-240, VARIATION AA, 5.
N-Channel PowerTrench® MOSFET 40V, 290A, 0.85mΩ
MOSFET, N-CH, 40V, 290A, POWER 56-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 290A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 710µohm; Rds(on) Test Voltag; Available until stocks are exhausted
Power Field-Effect Transistor, 47A I(D), 40V, 0.00085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
Embedded - Microcontrollers 3 (168 Hours) 32-LQFP 25 512 x 8 Internal LVD, POR, WDT Surface Mount Tray 8-Bit MCU 8-bit 740 740 CISC 16KB ROM 5V 32-Pin LQFP Tray
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
Product Comparison
The three parts on the right have similar specifications to FDMS8350L.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Subcategory
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Drain Current-Max (Abs) (ID)
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Height
    Length
    Width
    RoHS Status
    Resistance
    Power Dissipation
    Drain to Source Breakdown Voltage
    Avalanche Energy Rating (Eas)
    Nominal Vgs
    REACH SVHC
    Radiation Hardening
    Lead Free
    Contact Plating
    Drain-source On Resistance-Max
    View Compare
  • FDMS8350L
    FDMS8350L
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 1 week ago)
    12 Weeks
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    56.5mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    2017
    e3
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    Tin (Sn)
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    NO LEAD
    NOT SPECIFIED
    not_compliant
    NOT SPECIFIED
    R-PDSO-N5
    1
    1
    2.7W Ta 113W Tc
    Single
    ENHANCEMENT MODE
    DRAIN
    29 ns
    N-Channel
    SWITCHING
    0.85m Ω @ 47A, 10V
    3V @ 250μA
    17500pF @ 20V
    47A Ta 200A Tc
    242nC @ 10V
    22ns
    40V
    4.5V 10V
    ±20V
    18 ns
    83 ns
    200A
    MO-240AA
    20V
    47A
    300A
    40V
    1.05mm
    5.1mm
    6.25mm
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • FDMS7672AS
    FDMS7672AS
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 3 days ago)
    18 Weeks
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    68.1mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®, SyncFET™
    -
    e3
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    Tin (Sn)
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    -
    -
    -
    -
    R-XDSO-N5
    1
    -
    2.5W Ta 46W Tc
    Single
    ENHANCEMENT MODE
    DRAIN
    12 ns
    N-Channel
    SWITCHING
    4m Ω @ 18A, 10V
    3V @ 1mA
    2820pF @ 15V
    19A Ta 42A Tc
    46nC @ 10V
    5ns
    -
    4.5V 10V
    ±20V
    4 ns
    28 ns
    42A
    -
    20V
    -
    90A
    -
    1.05mm
    5mm
    6mm
    ROHS3 Compliant
    3.5MOhm
    45W
    30V
    60 mJ
    1.9 V
    No SVHC
    No
    Lead Free
    -
    -
    FDMS8350L vs FDMS7672AS
  • FDMS86310
    FDMS86310
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 2 days ago)
    13 Weeks
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    68.1mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    -
    e3
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    Tin (Sn)
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    FLAT
    -
    -
    -
    R-PDSO-F5
    1
    -
    2.5W Ta 96W Tc
    Single
    ENHANCEMENT MODE
    DRAIN
    28 ns
    N-Channel
    SWITCHING
    4.8m Ω @ 17A, 10V
    4.5V @ 250μA
    6290pF @ 40V
    17A Ta 50A Tc
    95nC @ 10V
    23ns
    -
    8V 10V
    ±20V
    9 ns
    35 ns
    17A
    MO-240AA
    20V
    50A
    -
    -
    1.05mm
    5.1mm
    5.85mm
    ROHS3 Compliant
    -
    96W
    80V
    -
    -
    -
    No
    Lead Free
    -
    -
    FDMS8350L vs FDMS86310
  • FDMS0312AS
    FDMS0312AS
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 2 days ago)
    26 Weeks
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    74mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®, SyncFET™
    -
    e3
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    -
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    FLAT
    NOT SPECIFIED
    not_compliant
    NOT SPECIFIED
    R-PDSO-F5
    1
    -
    2.5W Ta 36W Tc
    Single
    ENHANCEMENT MODE
    DRAIN
    10 ns
    N-Channel
    SWITCHING
    5m Ω @ 18A, 10V
    3V @ 1mA
    1815pF @ 15V
    18A Ta 22A Tc
    31nC @ 10V
    2.3ns
    -
    4.5V 10V
    ±20V
    6 ns
    25 ns
    18A
    MO-240AA
    20V
    22A
    100A
    -
    1mm
    6mm
    5mm
    ROHS3 Compliant
    -
    -
    30V
    33 mJ
    -
    -
    -
    -
    Tin
    0.005Ohm
    FDMS8350L vs FDMS0312AS
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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