Fairchild/ON Semiconductor FDMS8027S

Name: FDMS8027S
Brand: Fairchild/ON Semiconductor
SKU: 2481968-FDMS8027S
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FDMS8027S

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2481968-FDMS8027S

Description:: MOSFET N-CH 30V POWER56

ECAD Model:

Datasheet:: FDMS8027S

Specifications

Fairchild/ON Semiconductor FDMS8027S technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDMS8027S.

Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Factory Lead Time
26 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-PowerTDFN
Number of Pins
8
Weight
74mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
PowerTrench®, SyncFET™
Published
2006
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
5
ECCN Code
EAR99
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
FLAT
JESD-30 Code
R-PDSO-F5
Number of Elements
1
Power Dissipation-Max
2.5W Ta 36W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
36W
Case Connection
DRAIN
Turn On Delay Time
10 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
5m Ω @ 18A, 10V
Vgs(th) (Max) @ Id
3V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds
1815pF @ 15V
Current - Continuous Drain (Id) @ 25°C
18A Ta 22A Tc
Gate Charge (Qg) (Max) @ Vgs
31nC @ 10V
Rise Time
2.3ns
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
6 ns
Turn-Off Delay Time
25 ns
Continuous Drain Current (ID)
22A
JEDEC-95 Code
MO-240AA
Gate to Source Voltage (Vgs)
20V
Drain-source On Resistance-Max
0.005Ohm
Drain to Source Breakdown Voltage
30V
Avalanche Energy Rating (Eas)
33 mJ
Nominal Vgs
1.5 V
Height
1.05mm
Length
5mm
Width
6mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant

Description

FDMS8027S Description
FDMS8027S is a 30V N-Channel PowerTrench? SyncFET?. The onsemi FDMS8027S has been designed to minimize losses in power conversion applications. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. The FDMS8027S has the added benefit of an efficient monolithic Schottky body diode.

FDMS8027S Features
Max rDS(on) = 5.0 mO at VGS = 10 V, ID = 18 A
Max rDS(on) = 6.2 mO at VGS = 4.5 V, ID = 16 A
Advanced Package and Silicon combination for low rDS(on) and high efficiency
SyncFET Schottky Body Diode
MSL1 robust package design
100% UIL tested
RoHS Compliant

FDMS8027S Applications
Synchronous Rectifier for DC/DC Converters
Notebook Vcore
GPU low side switch
Networking Point of Load low side switch
Telecom secondary side rectification

FDMS8027S More Descriptions

Single N-Channel 30 V 2.5 W 31 nC PowerTrench Surface Mount Mosfet - POWER 56-8
Power Field-Effect Transistor, 18A I(D), 30V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
MOSFET, N CH, 30V, 22A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:22A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0042ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.5V; Power Dissipation Pd:36W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
The FDMS8027S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.This device has the added benefit of an efficient monolithic Schottky body diode.

Product Comparison

The three parts on the right have similar specifications to FDMS8027S.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Subcategory

Technology

Terminal Position

Terminal Form

JESD-30 Code

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain-source On Resistance-Max

Drain to Source Breakdown Voltage

Avalanche Energy Rating (Eas)

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Terminal Finish

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Drain to Source Voltage (Vdss)

Lead Free

Drain Current-Max (Abs) (ID)

View Compare
FDMS8027S

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 2 days ago)

26 Weeks

Tin

Surface Mount

Surface Mount

8-PowerTDFN

8

74mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®, SyncFET™

2006

e3

yes

Active

1 (Unlimited)

5

EAR99

FET General Purpose Power

MOSFET (Metal Oxide)

DUAL

FLAT

R-PDSO-F5

1

2.5W Ta 36W Tc

Single

ENHANCEMENT MODE

36W

DRAIN

10 ns

N-Channel

SWITCHING

5m Ω @ 18A, 10V

3V @ 1mA

1815pF @ 15V

18A Ta 22A Tc

31nC @ 10V

2.3ns

4.5V 10V

±20V

6 ns

25 ns

22A

MO-240AA

20V

0.005Ohm

30V

33 mJ

1.5 V

1.05mm

5mm

6mm

No SVHC

No

ROHS3 Compliant

-

-

-

-

-

-

-

-
FDMS8350LET40

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 1 week ago)

12 Weeks

-

Surface Mount

Surface Mount

8-PowerTDFN

8

56.5mg

-

-55°C~175°C TJ

Tape & Reel (TR)

PowerTrench®

-

e3

yes

Active

1 (Unlimited)

-

EAR99

-

MOSFET (Metal Oxide)

-

-

-

-

3.33W Ta 125W Tc

Single

-

-

-

-

N-Channel

-

0.85m Ω @ 47A, 10V

3V @ 250μA

16590pF @ 20V

49A Ta 300A Tc

219nC @ 10V

-

4.5V 10V

±20V

-

-

300A

-

-

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

Tin (Sn)

260

not_compliant

NOT SPECIFIED

40V

-

-

FDMS8027S vs FDMS8350LET40
FDMS8050ET30

Fairchild/ON Semiconductor

ACTIVE, NOT REC (Last Updated: 2 days ago)

6 Weeks

-

Surface Mount

Surface Mount

8-PowerTDFN

8

56.5mg

-

-55°C~175°C TJ

Tape & Reel (TR)

PowerTrench®

2017

e3

yes

Not For New Designs

1 (Unlimited)

-

EAR99

-

MOSFET (Metal Oxide)

-

-

-

-

3.3W Ta 180W Tc

Single

-

-

-

-

N-Channel

-

0.65m Ω @ 55A, 10V

3V @ 750μA

22610pF @ 15V

55A Ta 423A Tc

285nC @ 10V

-

4.5V 10V

±20V

-

-

423A

-

-

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

Tin (Sn)

260

not_compliant

NOT SPECIFIED

30V

Lead Free

-

FDMS8027S vs FDMS8050ET30
FDMS86310

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 2 days ago)

13 Weeks

-

Surface Mount

Surface Mount

8-PowerTDFN

8

68.1mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®

-

e3

yes

Active

1 (Unlimited)

5

EAR99

FET General Purpose Power

MOSFET (Metal Oxide)

DUAL

FLAT

R-PDSO-F5

1

2.5W Ta 96W Tc

Single

ENHANCEMENT MODE

96W

DRAIN

28 ns

N-Channel

SWITCHING

4.8m Ω @ 17A, 10V

4.5V @ 250μA

6290pF @ 40V

17A Ta 50A Tc

95nC @ 10V

23ns

8V 10V

±20V

9 ns

35 ns

17A

MO-240AA

20V

-

80V

-

-

1.05mm

5.1mm

5.85mm

-

No

ROHS3 Compliant

Tin (Sn)

-

-

-

-

Lead Free

50A

FDMS8027S vs FDMS86310