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FDMS8025S

Fairchild/ON Semiconductor FDMS8025S

Part Number:
FDMS8025S
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
3070082-FDMS8025S
Description:
MOSFET N-CH 30V POWER56
ECAD Model:
Datasheet:
FDMS8025S

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Specifications
Fairchild/ON Semiconductor FDMS8025S technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDMS8025S.
  • Lifecycle Status
    ACTIVE (Last Updated: 1 day ago)
  • Factory Lead Time
    18 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-PowerTDFN
  • Number of Pins
    8
  • Weight
    68.1mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    PowerTrench®, SyncFET™
  • Published
    2010
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    5
  • ECCN Code
    EAR99
  • Resistance
    2.8MOhm
  • Terminal Finish
    Tin (Sn)
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    FLAT
  • JESD-30 Code
    R-PDSO-F5
  • Number of Elements
    1
  • Power Dissipation-Max
    2.5W Ta 50W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    50W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    11 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    2.8m Ω @ 24A, 10V
  • Vgs(th) (Max) @ Id
    3V @ 1mA
  • Input Capacitance (Ciss) (Max) @ Vds
    3000pF @ 15V
  • Current - Continuous Drain (Id) @ 25°C
    24A Ta 49A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    47nC @ 10V
  • Rise Time
    4.5ns
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    3.7 ns
  • Turn-Off Delay Time
    29 ns
  • Continuous Drain Current (ID)
    49A
  • Threshold Voltage
    1.7V
  • JEDEC-95 Code
    MO-240AA
  • Gate to Source Voltage (Vgs)
    20V
  • Drain Current-Max (Abs) (ID)
    24A
  • Drain to Source Breakdown Voltage
    30V
  • Pulsed Drain Current-Max (IDM)
    100A
  • Avalanche Energy Rating (Eas)
    66 mJ
  • Height
    1.05mm
  • Length
    5mm
  • Width
    6mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
FDMS8025S Description
For new designs, this component number is not recommended. Please replace NTMFS4C024NT1G with NTMFS4C024NT1G. The FDMS8025S was created with the goal of reducing power conversion losses. The lowest RDS(on) while maintaining great switching performance has been achieved by combining advances in both semiconductor and packaging technology. This device also has a monolithic Schottky body diode, which is very efficient.

FDMS8025S Features
Max rDS(on) = 2.8 mΩ at VGS = 10 V, ID = 24 A
Max rDS(on) = 3.5 mΩ at VGS = 4.5 V, ID = 21 A
Advanced package and silicon combination for low RDS(on) and high efficiency
SyncFET Schottky Body Diode
MSL1 robust package design
100% UIL tested
RoHS Compliant

FDMS8025S Applications
Synchronous Rectifier for DC/DC Converters
Notebook Vcore/GPU low side switch
Networking Point of Load low side switch
Telecom secondary side rectification
FDMS8025S More Descriptions
Trans MOSFET N-CH 30V 24A 8-Pin Power 56 EP T/R
Power Field-Effect Transistor, 24A I(D), 30V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
The FDMS8025S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.This device has the added benefit of an efficient monolithic Schottky body diode.
MOSFET, N CH, 30V, 49A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:49A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0022ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V; Power Dissipation Pd:50W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
Product Comparison
The three parts on the right have similar specifications to FDMS8025S.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Terminal Finish
    Subcategory
    Technology
    Terminal Position
    Terminal Form
    JESD-30 Code
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Drain Current-Max (Abs) (ID)
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Avalanche Energy Rating (Eas)
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Nominal Vgs
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Number of Channels
    FET Feature
    View Compare
  • FDMS8025S
    FDMS8025S
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 1 day ago)
    18 Weeks
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    68.1mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®, SyncFET™
    2010
    e3
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    2.8MOhm
    Tin (Sn)
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    FLAT
    R-PDSO-F5
    1
    2.5W Ta 50W Tc
    Single
    ENHANCEMENT MODE
    50W
    DRAIN
    11 ns
    N-Channel
    SWITCHING
    2.8m Ω @ 24A, 10V
    3V @ 1mA
    3000pF @ 15V
    24A Ta 49A Tc
    47nC @ 10V
    4.5ns
    4.5V 10V
    ±20V
    3.7 ns
    29 ns
    49A
    1.7V
    MO-240AA
    20V
    24A
    30V
    100A
    66 mJ
    1.05mm
    5mm
    6mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
  • FDMS7660
    FDMS7660
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 2 days ago)
    18 Weeks
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    68.1mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    2007
    e3
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    2.8MOhm
    Tin (Sn)
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    -
    R-PDSO-N5
    1
    2.5W Ta 78W Tc
    Single
    ENHANCEMENT MODE
    2.5W
    DRAIN
    17 ns
    N-Channel
    SWITCHING
    2.8m Ω @ 25A, 10V
    3V @ 250μA
    5565pF @ 15V
    25A Ta 42A Tc
    84nC @ 10V
    9ns
    4.5V 10V
    ±20V
    7 ns
    37 ns
    25A
    1.9V
    MO-240AA
    20V
    -
    30V
    -
    -
    1.05mm
    5mm
    6mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    1.9 V
    -
    -
    -
    -
    -
    FDMS8025S vs FDMS7660
  • FDMS86550ET60
    FDMS86550ET60
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 3 days ago)
    12 Weeks
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    56.5mg
    -
    -55°C~175°C TJ
    Tape & Reel (TR)
    PowerTrench®
    -
    e3
    yes
    Active
    1 (Unlimited)
    -
    EAR99
    -
    Tin (Sn)
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    3.3W Ta 187W Tc
    Single
    -
    -
    -
    43 ns
    N-Channel
    -
    1.65m Ω @ 32A, 10V
    4.5V @ 250μA
    8235pF @ 30V
    32A Ta 245A Tc
    154nC @ 10V
    27ns
    8V 10V
    ±20V
    11 ns
    42 ns
    245A
    -
    -
    20V
    -
    60V
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    Lead Free
    -
    260
    not_compliant
    NOT SPECIFIED
    1
    -
    FDMS8025S vs FDMS86550ET60
  • FDMS8570SDC
    FDMS8570SDC
    Fairchild/ON Semiconductor
    LAST SHIPMENTS (Last Updated: 1 week ago)
    -
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    90mg
    SILICON
    -55°C~150°C TJ
    Digi-Reel®
    PowerTrench®, SyncFET™
    2017
    e3
    yes
    Obsolete
    1 (Unlimited)
    5
    EAR99
    -
    Tin (Sn)
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    FLAT
    R-PDSO-F5
    1
    3.3W Ta 59W Tc
    Single
    ENHANCEMENT MODE
    59W
    DRAIN
    11 ns
    N-Channel
    SWITCHING
    2.8m Ω @ 28A, 10V
    2.2V @ 1mA
    2825pF @ 13V
    28A Ta 60A Tc
    42nC @ 10V
    4ns
    4.5V 10V
    ±12V
    3 ns
    33 ns
    60A
    1.5V
    MO-240AA
    12V
    -
    25V
    100A
    45 mJ
    -
    -
    -
    No SVHC
    No
    RoHS Compliant
    -
    -
    -
    -
    -
    -
    Schottky Diode (Body)
    FDMS8025S vs FDMS8570SDC
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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