Fairchild/ON Semiconductor FDMS7678

Name: FDMS7678
Brand: Fairchild/ON Semiconductor
SKU: 2481581-FDMS7678
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FDMS7678

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2481581-FDMS7678

Description:: MOSFET N-CH 30V 17.5A POWER56

ECAD Model:

Datasheet:: FDMS7678

Part Pictures

Specifications

Fairchild/ON Semiconductor FDMS7678 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDMS7678.

Lifecycle Status
ACTIVE (Last Updated: 4 days ago)
Factory Lead Time
26 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-PowerTDFN
Number of Pins
8
Weight
74mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
PowerTrench®
Published
2006
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
5
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
FLAT
JESD-30 Code
R-PDSO-F5
Number of Elements
1
Power Dissipation-Max
2.3W Ta 41W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
41W
Case Connection
DRAIN
Turn On Delay Time
10 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
5.5m Ω @ 17.5A, 10V
Vgs(th) (Max) @ Id
3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
2410pF @ 15V
Current - Continuous Drain (Id) @ 25°C
17.5A Ta 26A Tc
Gate Charge (Qg) (Max) @ Vgs
39nC @ 10V
Rise Time
4ns
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
3 ns
Turn-Off Delay Time
26 ns
Continuous Drain Current (ID)
17.5A
Threshold Voltage
1.5V
JEDEC-95 Code
MO-240AA
Gate to Source Voltage (Vgs)
20V
Drain Current-Max (Abs) (ID)
26A
Drain-source On Resistance-Max
0.0055Ohm
Drain to Source Breakdown Voltage
30V
Pulsed Drain Current-Max (IDM)
70A
Avalanche Energy Rating (Eas)
54 mJ
Nominal Vgs
1.5 V
Height
1.05mm
Length
5.1mm
Width
6.25mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

FDMS7678 Description
FDMS7678 is a 30V N-Channel Power Trench? MOSFET. The N-Channel MOSFET FDMS7678 is produced using an advanced Power Trench? process that has been specially tailored to minimize the on-state resistance. The onsemi FDMS7678 is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.

FDMS7678 Features
Max rDS(on) = 5.5 mΩ at VGS = 10 V, ID = 17.5 A
Max rDS(on) = 6.8 mΩ at VGS = 4.5 V, ID = 15 A
High-performance technology for extremely low RDS(on)
Termination is Lead-free
RoHS Compliant

FDMS7678 Applications
Notebook PC
Portable Devices
DC-DC Buck Converters
Notebook Battery Power Management
Load Switch in Notebook

FDMS7678 More Descriptions

MOSFET, N-CH, 30V, 8PQFN; Transistor Polarity:N Channel; Continuous Drain Curren
N-Channel Power Trench® MOSFET 30V, 26A, 5.5mΩ
Power Field-Effect Transistor, 17.5A I(D), 30V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.
MOSFET, N-CH, 30V, 8PQFN; Transistor Polarity:N Channel; Continuous Drain Current Id:26A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0047ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.5V; Power Dissipation Pd:41W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (20-Jun-2013); Operating Temperature Range:-55°C to 150°C

Product Comparison

The three parts on the right have similar specifications to FDMS7678.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Subcategory

Technology

Terminal Position

Terminal Form

JESD-30 Code

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Avalanche Energy Rating (Eas)

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Contact Plating

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Number of Channels

FET Feature

View Compare
FDMS7678

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 4 days ago)

26 Weeks

Surface Mount

Surface Mount

8-PowerTDFN

8

74mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®

2006

e3

yes

Active

1 (Unlimited)

5

EAR99

Tin (Sn)

FET General Purpose Power

MOSFET (Metal Oxide)

DUAL

FLAT

R-PDSO-F5

1

2.3W Ta 41W Tc

Single

ENHANCEMENT MODE

41W

DRAIN

10 ns

N-Channel

SWITCHING

5.5m Ω @ 17.5A, 10V

3V @ 250μA

2410pF @ 15V

17.5A Ta 26A Tc

39nC @ 10V

4ns

4.5V 10V

±20V

3 ns

26 ns

17.5A

1.5V

MO-240AA

20V

26A

0.0055Ohm

30V

70A

54 mJ

1.5 V

1.05mm

5.1mm

6.25mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-
FDMS86550

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 3 days ago)

13 Weeks

Surface Mount

Surface Mount

8-PowerTDFN

8

56.5mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®

2010

e3

yes

Active

1 (Unlimited)

5

EAR99

-

FET General Purpose Power

MOSFET (Metal Oxide)

DUAL

NO LEAD

R-PDSO-N5

1

2.7W Ta 156W Tc

Single

ENHANCEMENT MODE

-

DRAIN

43 ns

N-Channel

SWITCHING

1.65m Ω @ 32A, 10V

4.5V @ 250μA

11530pF @ 30V

32A Ta 155A Tc

154nC @ 10V

27ns

8V 10V

±20V

11 ns

42 ns

155A

-

MO-240AA

20V

32A

-

60V

320A

937 mJ

-

1.05mm

5.1mm

6.25mm

-

-

ROHS3 Compliant

-

Tin

NOT SPECIFIED

not_compliant

NOT SPECIFIED

1

-

FDMS7678 vs FDMS86550
FDMS8570SDC

Fairchild/ON Semiconductor

LAST SHIPMENTS (Last Updated: 1 week ago)

-

Surface Mount

Surface Mount

8-PowerTDFN

8

90mg

SILICON

-55°C~150°C TJ

Digi-Reel®

PowerTrench®, SyncFET™

2017

e3

yes

Obsolete

1 (Unlimited)

5

EAR99

Tin (Sn)

FET General Purpose Power

MOSFET (Metal Oxide)

DUAL

FLAT

R-PDSO-F5

1

3.3W Ta 59W Tc

Single

ENHANCEMENT MODE

59W

DRAIN

11 ns

N-Channel

SWITCHING

2.8m Ω @ 28A, 10V

2.2V @ 1mA

2825pF @ 13V

28A Ta 60A Tc

42nC @ 10V

4ns

4.5V 10V

±12V

3 ns

33 ns

60A

1.5V

MO-240AA

12V

-

-

25V

100A

45 mJ

-

-

-

-

No SVHC

No

RoHS Compliant

-

-

-

-

-

-

Schottky Diode (Body)

FDMS7678 vs FDMS8570SDC
FDMS0312AS

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 2 days ago)

26 Weeks

Surface Mount

Surface Mount

8-PowerTDFN

8

74mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®, SyncFET™

-

e3

yes

Active

1 (Unlimited)

5

EAR99

-

FET General Purpose Power

MOSFET (Metal Oxide)

DUAL

FLAT

R-PDSO-F5

1

2.5W Ta 36W Tc

Single

ENHANCEMENT MODE

-

DRAIN

10 ns

N-Channel

SWITCHING

5m Ω @ 18A, 10V

3V @ 1mA

1815pF @ 15V

18A Ta 22A Tc

31nC @ 10V

2.3ns

4.5V 10V

±20V

6 ns

25 ns

18A

-

MO-240AA

20V

22A

0.005Ohm

30V

100A

33 mJ

-

1mm

6mm

5mm

-

-

ROHS3 Compliant

-

Tin

NOT SPECIFIED

not_compliant

NOT SPECIFIED

-

-

FDMS7678 vs FDMS0312AS