Fairchild/ON Semiconductor FDMS7658AS
- Part Number:
- FDMS7658AS
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2484276-FDMS7658AS
- Description:
- MOSFET N-CH 30V POWER56
- Datasheet:
- FDMS7658AS
Fairchild/ON Semiconductor FDMS7658AS technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDMS7658AS.
- Lifecycle StatusACTIVE (Last Updated: 2 days ago)
- Factory Lead Time18 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-PowerTDFN
- Number of Pins8
- Weight68.1mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesPowerTrench®, SyncFET™
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations5
- ECCN CodeEAR99
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormFLAT
- JESD-30 CodeR-PDSO-F5
- Number of Elements1
- Power Dissipation-Max2.5W Ta 89W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation89W
- Case ConnectionDRAIN
- Turn On Delay Time20 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs1.9m Ω @ 28A, 10V
- Vgs(th) (Max) @ Id3V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds7350pF @ 15V
- Current - Continuous Drain (Id) @ 25°C29A Ta 70A Tc
- Gate Charge (Qg) (Max) @ Vgs109nC @ 10V
- Rise Time8ns
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)5 ns
- Turn-Off Delay Time43 ns
- Continuous Drain Current (ID)49A
- Threshold Voltage1.7V
- JEDEC-95 CodeMO-240AA
- Gate to Source Voltage (Vgs)20V
- Drain Current-Max (Abs) (ID)29A
- Drain to Source Breakdown Voltage30V
- Nominal Vgs1.7 V
- Height1.05mm
- Length5mm
- Width6mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
FDMS7658AS Description
The FDMS7658AS has been designed to minimize losses in power conversion applications. Advancements in both silicon and package technologies have been combined to offer the lowest RDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.
FDMS7658AS Features Max rDS(on) = 1.9 m|? at VGS = 10 V, ID = 28 A Max rDS(on) = 2.2 m|? at VGS = 7 V, ID = 26 A Advanced Package and Silicon combination for low rDS(on) and high efficiency SyncFET Schottky Body Diode MSL1 robust package design 100% UIL tested RoHS Compliant
FDMS7658AS Applications This product is general usage and suitable for many different applications
FDMS7658AS Features Max rDS(on) = 1.9 m|? at VGS = 10 V, ID = 28 A Max rDS(on) = 2.2 m|? at VGS = 7 V, ID = 26 A Advanced Package and Silicon combination for low rDS(on) and high efficiency SyncFET Schottky Body Diode MSL1 robust package design 100% UIL tested RoHS Compliant
FDMS7658AS Applications This product is general usage and suitable for many different applications
FDMS7658AS More Descriptions
N-Channel 30 V 28 A 1.9 mO Surface Mount PowerTrench SyncFET Mosfet - Power 56
Power Field-Effect Transistor, 29A I(D), 30V, 0.0019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
MOSFET, N CH, 30V, 49A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:49A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0015ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V; Power Dissipation Pd:89W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
The FDMS7658AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.
Power Field-Effect Transistor, 29A I(D), 30V, 0.0019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
MOSFET, N CH, 30V, 49A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:49A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0015ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V; Power Dissipation Pd:89W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
The FDMS7658AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.
The three parts on the right have similar specifications to FDMS7658AS.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeSubcategoryTechnologyTerminal PositionTerminal FormJESD-30 CodeNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageJEDEC-95 CodeGate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain to Source Breakdown VoltageNominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreePublishedPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Number of ChannelsPulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)Terminal FinishFET FeatureDrain-source On Resistance-MaxView Compare
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FDMS7658ASACTIVE (Last Updated: 2 days ago)18 WeeksTinSurface MountSurface Mount8-PowerTDFN868.1mgSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®, SyncFET™e3yesActive1 (Unlimited)5EAR99FET General Purpose PowerMOSFET (Metal Oxide)DUALFLATR-PDSO-F512.5W Ta 89W TcSingleENHANCEMENT MODE89WDRAIN20 nsN-ChannelSWITCHING1.9m Ω @ 28A, 10V3V @ 1mA7350pF @ 15V29A Ta 70A Tc109nC @ 10V8ns4.5V 10V±20V5 ns43 ns49A1.7VMO-240AA20V29A30V1.7 V1.05mm5mm6mmNo SVHCNoROHS3 CompliantLead Free-----------
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ACTIVE (Last Updated: 3 days ago)13 WeeksTinSurface MountSurface Mount8-PowerTDFN856.5mgSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®e3yesActive1 (Unlimited)5EAR99FET General Purpose PowerMOSFET (Metal Oxide)DUALNO LEADR-PDSO-N512.7W Ta 156W TcSingleENHANCEMENT MODE-DRAIN43 nsN-ChannelSWITCHING1.65m Ω @ 32A, 10V4.5V @ 250μA11530pF @ 30V32A Ta 155A Tc154nC @ 10V27ns8V 10V±20V11 ns42 ns155A-MO-240AA20V32A60V-1.05mm5.1mm6.25mm--ROHS3 Compliant-2010NOT SPECIFIEDnot_compliantNOT SPECIFIED1320A937 mJ---
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LAST SHIPMENTS (Last Updated: 1 week ago)--Surface MountSurface Mount8-PowerTDFN890mgSILICON-55°C~150°C TJDigi-Reel®PowerTrench®, SyncFET™e3yesObsolete1 (Unlimited)5EAR99FET General Purpose PowerMOSFET (Metal Oxide)DUALFLATR-PDSO-F513.3W Ta 59W TcSingleENHANCEMENT MODE59WDRAIN11 nsN-ChannelSWITCHING2.8m Ω @ 28A, 10V2.2V @ 1mA2825pF @ 13V28A Ta 60A Tc42nC @ 10V4ns4.5V 10V±12V3 ns33 ns60A1.5VMO-240AA12V-25V----No SVHCNoRoHS Compliant-2017----100A45 mJTin (Sn)Schottky Diode (Body)-
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ACTIVE (Last Updated: 2 days ago)26 WeeksTinSurface MountSurface Mount8-PowerTDFN874mgSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®, SyncFET™e3yesActive1 (Unlimited)5EAR99FET General Purpose PowerMOSFET (Metal Oxide)DUALFLATR-PDSO-F512.5W Ta 36W TcSingleENHANCEMENT MODE-DRAIN10 nsN-ChannelSWITCHING5m Ω @ 18A, 10V3V @ 1mA1815pF @ 15V18A Ta 22A Tc31nC @ 10V2.3ns4.5V 10V±20V6 ns25 ns18A-MO-240AA20V22A30V-1mm6mm5mm--ROHS3 Compliant--NOT SPECIFIEDnot_compliantNOT SPECIFIED-100A33 mJ--0.005Ohm
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