Fairchild/ON Semiconductor FDMS7656AS
- Part Number:
- FDMS7656AS
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2482136-FDMS7656AS
- Description:
- MOSFET N-CH 30V POWER56
- Datasheet:
- FDMS7656AS
Fairchild/ON Semiconductor FDMS7656AS technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDMS7656AS.
- Lifecycle StatusACTIVE (Last Updated: 2 days ago)
- Factory Lead Time18 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-PowerTDFN
- Number of Pins8
- Weight68.1mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesPowerTrench®, SyncFET™
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations5
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormFLAT
- JESD-30 CodeR-PDSO-F5
- Number of Elements1
- Power Dissipation-Max2.5W Ta 96W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation96W
- Case ConnectionDRAIN
- Turn On Delay Time22 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs1.8m Ω @ 30A, 10V
- Vgs(th) (Max) @ Id3V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds8705pF @ 15V
- Current - Continuous Drain (Id) @ 25°C31A Ta 49A Tc
- Gate Charge (Qg) (Max) @ Vgs133nC @ 10V
- Rise Time12ns
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)7 ns
- Turn-Off Delay Time50 ns
- Continuous Drain Current (ID)31A
- JEDEC-95 CodeMO-240AA
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage30V
- Avalanche Energy Rating (Eas)242 mJ
- Nominal Vgs1.6 V
- Height1.05mm
- Length5mm
- Width6mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
FDMS7656AS Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 242 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 8705pF @ 15V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 31A amps.In this device, the drain-source breakdown voltage is 30V and VGS=30V, so the drain-source breakdown voltage is 30V in this case.It is [50 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 22 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).
FDMS7656AS Features
the avalanche energy rating (Eas) is 242 mJ
a continuous drain current (ID) of 31A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 50 ns
FDMS7656AS Applications
There are a lot of ON Semiconductor
FDMS7656AS applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 242 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 8705pF @ 15V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 31A amps.In this device, the drain-source breakdown voltage is 30V and VGS=30V, so the drain-source breakdown voltage is 30V in this case.It is [50 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 22 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).
FDMS7656AS Features
the avalanche energy rating (Eas) is 242 mJ
a continuous drain current (ID) of 31A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 50 ns
FDMS7656AS Applications
There are a lot of ON Semiconductor
FDMS7656AS applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
FDMS7656AS More Descriptions
Trans MOSFET N-CH Si 30V 31A 8-Pin Power 56 T/R
Power Field-Effect Transistor, 31A I(D), 30V, 0.0018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
MOSFET, N CH, 30V, 49A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:49A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0013ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.6V; Power Dissipation Pd:96W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
The FDMS7656AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on)while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.
Power Field-Effect Transistor, 31A I(D), 30V, 0.0018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
MOSFET, N CH, 30V, 49A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:49A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0013ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.6V; Power Dissipation Pd:96W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
The FDMS7656AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on)while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.
The three parts on the right have similar specifications to FDMS7656AS.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryTechnologyTerminal PositionTerminal FormJESD-30 CodeNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)JEDEC-95 CodeGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageAvalanche Energy Rating (Eas)Nominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeResistancePulsed Drain Current-Max (IDM)PublishedThreshold VoltageDrain Current-Max (Abs) (ID)View Compare
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FDMS7656ASACTIVE (Last Updated: 2 days ago)18 WeeksSurface MountSurface Mount8-PowerTDFN868.1mgSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®, SyncFET™e3yesActive1 (Unlimited)5EAR99Tin (Sn)FET General Purpose PowerMOSFET (Metal Oxide)DUALFLATR-PDSO-F512.5W Ta 96W TcSingleENHANCEMENT MODE96WDRAIN22 nsN-ChannelSWITCHING1.8m Ω @ 30A, 10V3V @ 1mA8705pF @ 15V31A Ta 49A Tc133nC @ 10V12ns4.5V 10V±20V7 ns50 ns31AMO-240AA20V30V242 mJ1.6 V1.05mm5mm6mmNo SVHCNoROHS3 CompliantLead Free------
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ACTIVE (Last Updated: 3 days ago)18 WeeksSurface MountSurface Mount8-PowerTDFN868.1mgSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®, SyncFET™e3yesActive1 (Unlimited)5EAR99Tin (Sn)FET General Purpose PowerMOSFET (Metal Oxide)DUAL-R-XDSO-N512.5W Ta 46W TcSingleENHANCEMENT MODE45WDRAIN12 nsN-ChannelSWITCHING4m Ω @ 18A, 10V3V @ 1mA2820pF @ 15V19A Ta 42A Tc46nC @ 10V5ns4.5V 10V±20V4 ns28 ns42A-20V30V60 mJ1.9 V1.05mm5mm6mmNo SVHCNoROHS3 CompliantLead Free3.5MOhm90A---
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ACTIVE (Last Updated: 2 days ago)18 WeeksSurface MountSurface Mount8-PowerTDFN868.1mgSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®e3yesActive1 (Unlimited)5EAR99Tin (Sn)FET General Purpose PowerMOSFET (Metal Oxide)DUAL-R-PDSO-N512.5W Ta 78W TcSingleENHANCEMENT MODE2.5WDRAIN17 nsN-ChannelSWITCHING2.8m Ω @ 25A, 10V3V @ 250μA5565pF @ 15V25A Ta 42A Tc84nC @ 10V9ns4.5V 10V±20V7 ns37 ns25AMO-240AA20V30V-1.9 V1.05mm5mm6mmNo SVHCNoROHS3 CompliantLead Free2.8MOhm-20071.9V-
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ACTIVE (Last Updated: 2 days ago)13 WeeksSurface MountSurface Mount8-PowerTDFN868.1mgSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®e3yesActive1 (Unlimited)5EAR99Tin (Sn)FET General Purpose PowerMOSFET (Metal Oxide)DUALFLATR-PDSO-F512.5W Ta 96W TcSingleENHANCEMENT MODE96WDRAIN28 nsN-ChannelSWITCHING4.8m Ω @ 17A, 10V4.5V @ 250μA6290pF @ 40V17A Ta 50A Tc95nC @ 10V23ns8V 10V±20V9 ns35 ns17AMO-240AA20V80V--1.05mm5.1mm5.85mm-NoROHS3 CompliantLead Free----50A
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