Fairchild/ON Semiconductor FDMS7560S
- Part Number:
- FDMS7560S
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2481657-FDMS7560S
- Description:
- MOSFET N-CH 25V 30A POWER56
- Datasheet:
- FDMS7560S
Fairchild/ON Semiconductor FDMS7560S technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDMS7560S.
- Lifecycle StatusACTIVE (Last Updated: 2 days ago)
- Factory Lead Time10 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-PowerTDFN
- Number of Pins8
- Weight90mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesPowerTrench®, SyncFET™
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations5
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormFLAT
- JESD-30 CodeR-PDSO-F5
- Number of Elements1
- Power Dissipation-Max2.5W Ta 89W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation2.5W
- Case ConnectionDRAIN
- Turn On Delay Time16 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs1.45m Ω @ 30A, 10V
- Vgs(th) (Max) @ Id3V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds5945pF @ 13V
- Current - Continuous Drain (Id) @ 25°C30A Ta 49A Tc
- Gate Charge (Qg) (Max) @ Vgs93nC @ 10V
- Rise Time7.4ns
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)4.8 ns
- Turn-Off Delay Time41 ns
- Continuous Drain Current (ID)30A
- Threshold Voltage1.7V
- JEDEC-95 CodeMO-240AA
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage25V
- Avalanche Energy Rating (Eas)220 mJ
- Nominal Vgs1.7 V
- Height1.05mm
- Length5.1mm
- Width6.25mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
FDMS7560S Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 220 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 5945pF @ 13V.This device has a continuous drain current (ID) of [30A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=25V, the drain-source breakdown voltage is 25V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 41 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 16 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 1.7V.Its overall power consumption can be reduced by using drive voltage (4.5V 10V).
FDMS7560S Features
the avalanche energy rating (Eas) is 220 mJ
a continuous drain current (ID) of 30A
a drain-to-source breakdown voltage of 25V voltage
the turn-off delay time is 41 ns
a threshold voltage of 1.7V
FDMS7560S Applications
There are a lot of ON Semiconductor
FDMS7560S applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 220 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 5945pF @ 13V.This device has a continuous drain current (ID) of [30A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=25V, the drain-source breakdown voltage is 25V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 41 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 16 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 1.7V.Its overall power consumption can be reduced by using drive voltage (4.5V 10V).
FDMS7560S Features
the avalanche energy rating (Eas) is 220 mJ
a continuous drain current (ID) of 30A
a drain-to-source breakdown voltage of 25V voltage
the turn-off delay time is 41 ns
a threshold voltage of 1.7V
FDMS7560S Applications
There are a lot of ON Semiconductor
FDMS7560S applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
FDMS7560S More Descriptions
N-Channel 25 V 30 A 0.00145 ohm SMT PowerTrench SyncFET Mosfet Power 56
Power Field-Effect Transistor, 30A I(D), 25V, 0.00145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
MOSFET, N CH, 25V, 49A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:49A; Drain Source Voltage Vds:25V; On Resistance Rds(on):0.0012ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V; Power Dissipation Pd:89W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
The FDMS7560S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.
Power Field-Effect Transistor, 30A I(D), 25V, 0.00145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
MOSFET, N CH, 25V, 49A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:49A; Drain Source Voltage Vds:25V; On Resistance Rds(on):0.0012ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V; Power Dissipation Pd:89W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
The FDMS7560S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.
The three parts on the right have similar specifications to FDMS7560S.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryTechnologyTerminal PositionTerminal FormJESD-30 CodeNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageJEDEC-95 CodeGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageAvalanche Energy Rating (Eas)Nominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeResistancePulsed Drain Current-Max (IDM)Peak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Number of ChannelsPublishedFET FeatureView Compare
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FDMS7560SACTIVE (Last Updated: 2 days ago)10 WeeksSurface MountSurface Mount8-PowerTDFN890mgSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®, SyncFET™e3yesActive1 (Unlimited)5EAR99Tin (Sn)FET General Purpose PowerMOSFET (Metal Oxide)DUALFLATR-PDSO-F512.5W Ta 89W TcSingleENHANCEMENT MODE2.5WDRAIN16 nsN-ChannelSWITCHING1.45m Ω @ 30A, 10V3V @ 1mA5945pF @ 13V30A Ta 49A Tc93nC @ 10V7.4ns4.5V 10V±20V4.8 ns41 ns30A1.7VMO-240AA20V25V220 mJ1.7 V1.05mm5.1mm6.25mmNo SVHCNoROHS3 CompliantLead Free---------
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ACTIVE (Last Updated: 3 days ago)18 WeeksSurface MountSurface Mount8-PowerTDFN868.1mgSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®, SyncFET™e3yesActive1 (Unlimited)5EAR99Tin (Sn)FET General Purpose PowerMOSFET (Metal Oxide)DUAL-R-XDSO-N512.5W Ta 46W TcSingleENHANCEMENT MODE45WDRAIN12 nsN-ChannelSWITCHING4m Ω @ 18A, 10V3V @ 1mA2820pF @ 15V19A Ta 42A Tc46nC @ 10V5ns4.5V 10V±20V4 ns28 ns42A--20V30V60 mJ1.9 V1.05mm5mm6mmNo SVHCNoROHS3 CompliantLead Free3.5MOhm90A------
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ACTIVE (Last Updated: 3 days ago)12 WeeksSurface MountSurface Mount8-PowerTDFN856.5mg--55°C~175°C TJTape & Reel (TR)PowerTrench®e3yesActive1 (Unlimited)-EAR99Tin (Sn)-MOSFET (Metal Oxide)----3.3W Ta 187W TcSingle---43 nsN-Channel-1.65m Ω @ 32A, 10V4.5V @ 250μA8235pF @ 30V32A Ta 245A Tc154nC @ 10V27ns8V 10V±20V11 ns42 ns245A--20V60V-------ROHS3 CompliantLead Free--260not_compliantNOT SPECIFIED1--
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LAST SHIPMENTS (Last Updated: 1 week ago)-Surface MountSurface Mount8-PowerTDFN890mgSILICON-55°C~150°C TJDigi-Reel®PowerTrench®, SyncFET™e3yesObsolete1 (Unlimited)5EAR99Tin (Sn)FET General Purpose PowerMOSFET (Metal Oxide)DUALFLATR-PDSO-F513.3W Ta 59W TcSingleENHANCEMENT MODE59WDRAIN11 nsN-ChannelSWITCHING2.8m Ω @ 28A, 10V2.2V @ 1mA2825pF @ 13V28A Ta 60A Tc42nC @ 10V4ns4.5V 10V±12V3 ns33 ns60A1.5VMO-240AA12V25V45 mJ----No SVHCNoRoHS Compliant--100A----2017Schottky Diode (Body)
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