Fairchild/ON Semiconductor FDMS0310AS
- Part Number:
- FDMS0310AS
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2481697-FDMS0310AS
- Description:
- MOSFET N-CH 30V 19A PT8
- Datasheet:
- FDMS0310AS
Fairchild/ON Semiconductor FDMS0310AS technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDMS0310AS.
- Lifecycle StatusACTIVE (Last Updated: 1 week ago)
- Factory Lead Time26 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-PowerTDFN
- Number of Pins8
- Weight74mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesPowerTrench®, SyncFET™
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations5
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormFLAT
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Reach Compliance Codenot_compliant
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- JESD-30 CodeR-PDSO-F5
- Number of Elements1
- Power Dissipation-Max2.5W Ta 41W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Turn On Delay Time9 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs4.3m Ω @ 19A, 10V
- Vgs(th) (Max) @ Id3V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds2280pF @ 15V
- Current - Continuous Drain (Id) @ 25°C19A Ta 22A Tc
- Gate Charge (Qg) (Max) @ Vgs37nC @ 10V
- Rise Time3.9ns
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)3.2 ns
- Turn-Off Delay Time25 ns
- Continuous Drain Current (ID)22A
- JEDEC-95 CodeMO-240AA
- Gate to Source Voltage (Vgs)20V
- Drain Current-Max (Abs) (ID)19A
- Drain-source On Resistance-Max0.0043Ohm
- Drain to Source Breakdown Voltage30V
- Pulsed Drain Current-Max (IDM)100A
- Avalanche Energy Rating (Eas)33 mJ
- RoHS StatusROHS3 Compliant
FDMS0310AS Description
The FDMS0310AS has been designed to minimize losses in power conversion applications. Advancements in both silicon and package technologies have been combined to offer the lowest RDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.
FDMS0310AS Features Max rDS(on) = 4.3 m? at VGS = 10 V, ID = 19 A Max rDS(on) = 5.2 m? at VGS = 4.5 V, ID = 17 A Advanced Package and Silicon combination for low rDS(on) and high efficiency SyncFETTM Schottky Body Diode MSL1 robust package design 100% UIL tested RoHS Compliant
FDMS0310AS Applications Synchronous Rectifier for DC/DC Converters Notebook Vcore/GPU low-side switch Networking Point of Load low-side switch Telecom secondary side rectification
FDMS0310AS Features Max rDS(on) = 4.3 m? at VGS = 10 V, ID = 19 A Max rDS(on) = 5.2 m? at VGS = 4.5 V, ID = 17 A Advanced Package and Silicon combination for low rDS(on) and high efficiency SyncFETTM Schottky Body Diode MSL1 robust package design 100% UIL tested RoHS Compliant
FDMS0310AS Applications Synchronous Rectifier for DC/DC Converters Notebook Vcore/GPU low-side switch Networking Point of Load low-side switch Telecom secondary side rectification
FDMS0310AS More Descriptions
Trans MOSFET N-CH Si 30V 19A 8-Pin PQFN EP T/R / MOSFET N-CH 30V 19A PT8
Power Field-Effect Transistor, 19A I(D), 30V, 0.0043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
The FDMS0310AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.This device has the added benefit of an efficient monolithic Schottky body diode.
Power Field-Effect Transistor, 19A I(D), 30V, 0.0043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
The FDMS0310AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.This device has the added benefit of an efficient monolithic Schottky body diode.
The three parts on the right have similar specifications to FDMS0310AS.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)JESD-30 CodeNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModeCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)JEDEC-95 CodeGate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxDrain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)RoHS StatusResistancePower DissipationNominal VgsHeightLengthWidthREACH SVHCRadiation HardeningLead FreePublishedThreshold VoltageFET FeatureView Compare
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FDMS0310ASACTIVE (Last Updated: 1 week ago)26 WeeksSurface MountSurface Mount8-PowerTDFN874mgSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®, SyncFET™e3yesActive1 (Unlimited)5EAR99Tin (Sn)FET General Purpose PowerMOSFET (Metal Oxide)DUALFLATNOT SPECIFIEDnot_compliantNOT SPECIFIEDR-PDSO-F512.5W Ta 41W TcSingleENHANCEMENT MODEDRAIN9 nsN-ChannelSWITCHING4.3m Ω @ 19A, 10V3V @ 1mA2280pF @ 15V19A Ta 22A Tc37nC @ 10V3.9ns4.5V 10V±20V3.2 ns25 ns22AMO-240AA20V19A0.0043Ohm30V100A33 mJROHS3 Compliant-------------
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ACTIVE (Last Updated: 3 days ago)18 WeeksSurface MountSurface Mount8-PowerTDFN868.1mgSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®, SyncFET™e3yesActive1 (Unlimited)5EAR99Tin (Sn)FET General Purpose PowerMOSFET (Metal Oxide)DUAL----R-XDSO-N512.5W Ta 46W TcSingleENHANCEMENT MODEDRAIN12 nsN-ChannelSWITCHING4m Ω @ 18A, 10V3V @ 1mA2820pF @ 15V19A Ta 42A Tc46nC @ 10V5ns4.5V 10V±20V4 ns28 ns42A-20V--30V90A60 mJROHS3 Compliant3.5MOhm45W1.9 V1.05mm5mm6mmNo SVHCNoLead Free---
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LAST SHIPMENTS (Last Updated: 1 week ago)-Surface MountSurface Mount8-PowerTDFN890mgSILICON-55°C~150°C TJDigi-Reel®PowerTrench®, SyncFET™e3yesObsolete1 (Unlimited)5EAR99Tin (Sn)FET General Purpose PowerMOSFET (Metal Oxide)DUALFLAT---R-PDSO-F513.3W Ta 59W TcSingleENHANCEMENT MODEDRAIN11 nsN-ChannelSWITCHING2.8m Ω @ 28A, 10V2.2V @ 1mA2825pF @ 13V28A Ta 60A Tc42nC @ 10V4ns4.5V 10V±12V3 ns33 ns60AMO-240AA12V--25V100A45 mJRoHS Compliant-59W----No SVHCNo-20171.5VSchottky Diode (Body)
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ACTIVE (Last Updated: 2 days ago)13 WeeksSurface MountSurface Mount8-PowerTDFN868.1mgSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®e3yesActive1 (Unlimited)5EAR99Tin (Sn)FET General Purpose PowerMOSFET (Metal Oxide)DUALFLAT---R-PDSO-F512.5W Ta 96W TcSingleENHANCEMENT MODEDRAIN28 nsN-ChannelSWITCHING4.8m Ω @ 17A, 10V4.5V @ 250μA6290pF @ 40V17A Ta 50A Tc95nC @ 10V23ns8V 10V±20V9 ns35 ns17AMO-240AA20V50A-80V--ROHS3 Compliant-96W-1.05mm5.1mm5.85mm-NoLead Free---
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