FDMS0310AS

Fairchild/ON Semiconductor FDMS0310AS

Part Number:
FDMS0310AS
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2481697-FDMS0310AS
Description:
MOSFET N-CH 30V 19A PT8
ECAD Model:
Datasheet:
FDMS0310AS

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Specifications
Fairchild/ON Semiconductor FDMS0310AS technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDMS0310AS.
  • Lifecycle Status
    ACTIVE (Last Updated: 1 week ago)
  • Factory Lead Time
    26 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-PowerTDFN
  • Number of Pins
    8
  • Weight
    74mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    PowerTrench®, SyncFET™
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    5
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    FLAT
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Reach Compliance Code
    not_compliant
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • JESD-30 Code
    R-PDSO-F5
  • Number of Elements
    1
  • Power Dissipation-Max
    2.5W Ta 41W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Case Connection
    DRAIN
  • Turn On Delay Time
    9 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    4.3m Ω @ 19A, 10V
  • Vgs(th) (Max) @ Id
    3V @ 1mA
  • Input Capacitance (Ciss) (Max) @ Vds
    2280pF @ 15V
  • Current - Continuous Drain (Id) @ 25°C
    19A Ta 22A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    37nC @ 10V
  • Rise Time
    3.9ns
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    3.2 ns
  • Turn-Off Delay Time
    25 ns
  • Continuous Drain Current (ID)
    22A
  • JEDEC-95 Code
    MO-240AA
  • Gate to Source Voltage (Vgs)
    20V
  • Drain Current-Max (Abs) (ID)
    19A
  • Drain-source On Resistance-Max
    0.0043Ohm
  • Drain to Source Breakdown Voltage
    30V
  • Pulsed Drain Current-Max (IDM)
    100A
  • Avalanche Energy Rating (Eas)
    33 mJ
  • RoHS Status
    ROHS3 Compliant
Description
FDMS0310AS Description The FDMS0310AS has been designed to minimize losses in power conversion applications. Advancements in both silicon and package technologies have been combined to offer the lowest RDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.
FDMS0310AS Features Max rDS(on) = 4.3 m? at VGS = 10 V, ID = 19 A Max rDS(on) = 5.2 m? at VGS = 4.5 V, ID = 17 A Advanced Package and Silicon combination for low rDS(on) and high efficiency SyncFETTM Schottky Body Diode MSL1 robust package design 100% UIL tested RoHS Compliant
FDMS0310AS Applications Synchronous Rectifier for DC/DC Converters Notebook Vcore/GPU low-side switch Networking Point of Load low-side switch Telecom secondary side rectification
FDMS0310AS More Descriptions
Trans MOSFET N-CH Si 30V 19A 8-Pin PQFN EP T/R / MOSFET N-CH 30V 19A PT8
Power Field-Effect Transistor, 19A I(D), 30V, 0.0043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
The FDMS0310AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.This device has the added benefit of an efficient monolithic Schottky body diode.
Product Comparison
The three parts on the right have similar specifications to FDMS0310AS.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Subcategory
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Avalanche Energy Rating (Eas)
    RoHS Status
    Resistance
    Power Dissipation
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    Lead Free
    Published
    Threshold Voltage
    FET Feature
    View Compare
  • FDMS0310AS
    FDMS0310AS
    ACTIVE (Last Updated: 1 week ago)
    26 Weeks
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    74mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®, SyncFET™
    e3
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    Tin (Sn)
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    FLAT
    NOT SPECIFIED
    not_compliant
    NOT SPECIFIED
    R-PDSO-F5
    1
    2.5W Ta 41W Tc
    Single
    ENHANCEMENT MODE
    DRAIN
    9 ns
    N-Channel
    SWITCHING
    4.3m Ω @ 19A, 10V
    3V @ 1mA
    2280pF @ 15V
    19A Ta 22A Tc
    37nC @ 10V
    3.9ns
    4.5V 10V
    ±20V
    3.2 ns
    25 ns
    22A
    MO-240AA
    20V
    19A
    0.0043Ohm
    30V
    100A
    33 mJ
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • FDMS7672AS
    ACTIVE (Last Updated: 3 days ago)
    18 Weeks
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    68.1mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®, SyncFET™
    e3
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    Tin (Sn)
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    -
    -
    -
    -
    R-XDSO-N5
    1
    2.5W Ta 46W Tc
    Single
    ENHANCEMENT MODE
    DRAIN
    12 ns
    N-Channel
    SWITCHING
    4m Ω @ 18A, 10V
    3V @ 1mA
    2820pF @ 15V
    19A Ta 42A Tc
    46nC @ 10V
    5ns
    4.5V 10V
    ±20V
    4 ns
    28 ns
    42A
    -
    20V
    -
    -
    30V
    90A
    60 mJ
    ROHS3 Compliant
    3.5MOhm
    45W
    1.9 V
    1.05mm
    5mm
    6mm
    No SVHC
    No
    Lead Free
    -
    -
    -
  • FDMS8570SDC
    LAST SHIPMENTS (Last Updated: 1 week ago)
    -
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    90mg
    SILICON
    -55°C~150°C TJ
    Digi-Reel®
    PowerTrench®, SyncFET™
    e3
    yes
    Obsolete
    1 (Unlimited)
    5
    EAR99
    Tin (Sn)
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    FLAT
    -
    -
    -
    R-PDSO-F5
    1
    3.3W Ta 59W Tc
    Single
    ENHANCEMENT MODE
    DRAIN
    11 ns
    N-Channel
    SWITCHING
    2.8m Ω @ 28A, 10V
    2.2V @ 1mA
    2825pF @ 13V
    28A Ta 60A Tc
    42nC @ 10V
    4ns
    4.5V 10V
    ±12V
    3 ns
    33 ns
    60A
    MO-240AA
    12V
    -
    -
    25V
    100A
    45 mJ
    RoHS Compliant
    -
    59W
    -
    -
    -
    -
    No SVHC
    No
    -
    2017
    1.5V
    Schottky Diode (Body)
  • FDMS86310
    ACTIVE (Last Updated: 2 days ago)
    13 Weeks
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    68.1mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    e3
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    Tin (Sn)
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    FLAT
    -
    -
    -
    R-PDSO-F5
    1
    2.5W Ta 96W Tc
    Single
    ENHANCEMENT MODE
    DRAIN
    28 ns
    N-Channel
    SWITCHING
    4.8m Ω @ 17A, 10V
    4.5V @ 250μA
    6290pF @ 40V
    17A Ta 50A Tc
    95nC @ 10V
    23ns
    8V 10V
    ±20V
    9 ns
    35 ns
    17A
    MO-240AA
    20V
    50A
    -
    80V
    -
    -
    ROHS3 Compliant
    -
    96W
    -
    1.05mm
    5.1mm
    5.85mm
    -
    No
    Lead Free
    -
    -
    -
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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