Fairchild/ON Semiconductor FDMS0309AS

Name: FDMS0309AS
Brand: Fairchild/ON Semiconductor
SKU: 2481452-FDMS0309AS
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FDMS0309AS

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2481452-FDMS0309AS

Description:: MOSFET N-CH 30V 21A PT8

ECAD Model:

Datasheet:: FDMS0309AS

Specifications

Fairchild/ON Semiconductor FDMS0309AS technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDMS0309AS.

Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Factory Lead Time
18 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-PowerTDFN
Number of Pins
8
Weight
68.1mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
PowerTrench®, SyncFET™
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
5
ECCN Code
EAR99
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
260
Reach Compliance Code
not_compliant
Time@Peak Reflow Temperature-Max (s)
30
JESD-30 Code
R-PDSO-F5
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
2.5W Ta 50W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
2.5W
Case Connection
DRAIN
Turn On Delay Time
11 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
3.5m Ω @ 21A, 10V
Vgs(th) (Max) @ Id
3V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds
3000pF @ 15V
Current - Continuous Drain (Id) @ 25°C
21A Ta 49A Tc
Gate Charge (Qg) (Max) @ Vgs
47nC @ 10V
Rise Time
4.5ns
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
3.7 ns
Turn-Off Delay Time
29 ns
Continuous Drain Current (ID)
49A
JEDEC-95 Code
MO-240AA
Gate to Source Voltage (Vgs)
20V
Drain-source On Resistance-Max
0.0035Ohm
Drain to Source Breakdown Voltage
30V
Avalanche Energy Rating (Eas)
66 mJ
RoHS Status
ROHS3 Compliant

Description

FDMS0309AS Description

The FDMS0309AS has been designed to minimize losses in power conversion application. The lowest rDS(on) while maintaining great switching performance has been achieved by combining advances in both semiconductor and packaging technology. This device also has a monolithic Schottky body diode, which is very efficient.

FDMS0309AS Features

MSL1 Robust Package Design
100% UIL tested
RoHS Compliant
Max rDS(on) = 3.5 mΩ at VGS = 10 V, ID = 21 A
Max rDS(on) = 4.3 mΩ at VGS = 4.5 V, ID = 19 A
Advanced package and silicon combination for low rDS(on) and high efficiency
SyncFET Schottky Body Diode

FDMS0309AS Applications

Synchrounous Rectifier for DC/DC Converters
Notebook Vcore/GPU Low Side Switch
Networking Point of Load Low Side Switch
Telecom Secondary Side Rectification

FDMS0309AS More Descriptions

FDMS0309AS Series 30 V 49 A 3.5 mOhm N-Channel Power Trench SyncFET - POWER-56
Power Field-Effect Transistor, 21A I(D), 30V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
The FDMS0309AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.This device has the added benefit of an efficient monolithic Schottky body diode.

Product Comparison

The three parts on the right have similar specifications to FDMS0309AS.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Subcategory

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Number of Elements

Number of Channels

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain-source On Resistance-Max

Drain to Source Breakdown Voltage

Avalanche Energy Rating (Eas)

RoHS Status

Terminal Finish

Drain to Source Voltage (Vdss)

Drain Current-Max (Abs) (ID)

Height

Length

Width

Radiation Hardening

Lead Free

Pulsed Drain Current-Max (IDM)

View Compare
FDMS0309AS

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 2 days ago)

18 Weeks

Tin

Surface Mount

Surface Mount

8-PowerTDFN

8

68.1mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®, SyncFET™

e3

yes

Active

1 (Unlimited)

5

EAR99

FET General Purpose Power

MOSFET (Metal Oxide)

DUAL

FLAT

260

not_compliant

30

R-PDSO-F5

1

1

2.5W Ta 50W Tc

Single

ENHANCEMENT MODE

2.5W

DRAIN

11 ns

N-Channel

SWITCHING

3.5m Ω @ 21A, 10V

3V @ 1mA

3000pF @ 15V

21A Ta 49A Tc

47nC @ 10V

4.5ns

4.5V 10V

±20V

3.7 ns

29 ns

49A

MO-240AA

20V

0.0035Ohm

30V

66 mJ

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-
FDMS8350LET40

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 1 week ago)

12 Weeks

-

Surface Mount

Surface Mount

8-PowerTDFN

8

56.5mg

-

-55°C~175°C TJ

Tape & Reel (TR)

PowerTrench®

e3

yes

Active

1 (Unlimited)

-

EAR99

-

MOSFET (Metal Oxide)

-

-

260

not_compliant

NOT SPECIFIED

-

-

-

3.33W Ta 125W Tc

Single

-

-

-

-

N-Channel

-

0.85m Ω @ 47A, 10V

3V @ 250μA

16590pF @ 20V

49A Ta 300A Tc

219nC @ 10V

-

4.5V 10V

±20V

-

-

300A

-

-

-

-

-

ROHS3 Compliant

Tin (Sn)

40V

-

-

-

-

-

-

-

FDMS0309AS vs FDMS8350LET40
FDMS86310

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 2 days ago)

13 Weeks

-

Surface Mount

Surface Mount

8-PowerTDFN

8

68.1mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®

e3

yes

Active

1 (Unlimited)

5

EAR99

FET General Purpose Power

MOSFET (Metal Oxide)

DUAL

FLAT

-

-

-

R-PDSO-F5

1

-

2.5W Ta 96W Tc

Single

ENHANCEMENT MODE

96W

DRAIN

28 ns

N-Channel

SWITCHING

4.8m Ω @ 17A, 10V

4.5V @ 250μA

6290pF @ 40V

17A Ta 50A Tc

95nC @ 10V

23ns

8V 10V

±20V

9 ns

35 ns

17A

MO-240AA

20V

-

80V

-

ROHS3 Compliant

Tin (Sn)

-

50A

1.05mm

5.1mm

5.85mm

No

Lead Free

-

FDMS0309AS vs FDMS86310
FDMS0312AS

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 2 days ago)

26 Weeks

Tin

Surface Mount

Surface Mount

8-PowerTDFN

8

74mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®, SyncFET™

e3

yes

Active

1 (Unlimited)

5

EAR99

FET General Purpose Power

MOSFET (Metal Oxide)

DUAL

FLAT

NOT SPECIFIED

not_compliant

NOT SPECIFIED

R-PDSO-F5

1

-

2.5W Ta 36W Tc

Single

ENHANCEMENT MODE

-

DRAIN

10 ns

N-Channel

SWITCHING

5m Ω @ 18A, 10V

3V @ 1mA

1815pF @ 15V

18A Ta 22A Tc

31nC @ 10V

2.3ns

4.5V 10V

±20V

6 ns

25 ns

18A

MO-240AA

20V

0.005Ohm

30V

33 mJ

ROHS3 Compliant

-

-

22A

1mm

6mm

5mm

-

-

100A

FDMS0309AS vs FDMS0312AS