Fairchild/ON Semiconductor FDMS0308AS
- Part Number:
- FDMS0308AS
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2481380-FDMS0308AS
- Description:
- MOSFET N-CH 30V 24A PT8
- Datasheet:
- FDMS0308AS
Fairchild/ON Semiconductor FDMS0308AS technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDMS0308AS.
- Lifecycle StatusACTIVE (Last Updated: 2 days ago)
- Factory Lead Time18 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-PowerTDFN
- Number of Pins8
- Weight68.1mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesPowerTrench®, SyncFET™
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations5
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormFLAT
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Reach Compliance Codenot_compliant
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- JESD-30 CodeR-PDSO-F5
- Number of Elements1
- Power Dissipation-Max2.5W Ta 50W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Turn On Delay Time13 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs2.8m Ω @ 24A, 10V
- Vgs(th) (Max) @ Id3V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds3000pF @ 15V
- Current - Continuous Drain (Id) @ 25°C24A Ta 49A Tc
- Gate Charge (Qg) (Max) @ Vgs47nC @ 10V
- Rise Time4.5ns
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)3.7 ns
- Turn-Off Delay Time29 ns
- Continuous Drain Current (ID)49A
- JEDEC-95 CodeMO-240AA
- Gate to Source Voltage (Vgs)20V
- Drain Current-Max (Abs) (ID)24A
- Drain to Source Breakdown Voltage30V
- Pulsed Drain Current-Max (IDM)100A
- Avalanche Energy Rating (Eas)66 mJ
- Height1mm
- Length6mm
- Width5mm
- RoHS StatusROHS3 Compliant
FDMS0308AS Description
FDMS0308AS is a type of N-channel PowerTrench? SyncFET? that is provided by ON Semiconductor to minimize losses in power conversion application. Based on the advanced silicon and package technologies, it is able to provide low RDS (on) as well as superior switching performance. Moreover, it has integrated the advantages of an efficient monolithic Schottky body diode.
FDMS0308AS Features
Advanced silicon and package technologies
Low RDS (on)
Superior switching performance
High efficiency
Available in the Power 56 package
FDMS0308AS Applications
Notebook point od load low side switch
Notebook VCORE/GPU low side switch
telecom secondary side rectification
Synchronous rectifier for DC/DC converters
FDMS0308AS is a type of N-channel PowerTrench? SyncFET? that is provided by ON Semiconductor to minimize losses in power conversion application. Based on the advanced silicon and package technologies, it is able to provide low RDS (on) as well as superior switching performance. Moreover, it has integrated the advantages of an efficient monolithic Schottky body diode.
FDMS0308AS Features
Advanced silicon and package technologies
Low RDS (on)
Superior switching performance
High efficiency
Available in the Power 56 package
FDMS0308AS Applications
Notebook point od load low side switch
Notebook VCORE/GPU low side switch
telecom secondary side rectification
Synchronous rectifier for DC/DC converters
FDMS0308AS More Descriptions
Trans MOSFET N-CH Si 30V 24A 8-Pin PQFN EP T/R
Power Field-Effect Transistor, 24A I(D), 30V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
The FDMS0308AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.This device has the added benefit of an efficient monolithic Schottky body diode.
Power Field-Effect Transistor, 24A I(D), 30V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
The FDMS0308AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.This device has the added benefit of an efficient monolithic Schottky body diode.
The three parts on the right have similar specifications to FDMS0308AS.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)JESD-30 CodeNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModeCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)JEDEC-95 CodeGate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)HeightLengthWidthRoHS StatusPublishedPower DissipationThreshold VoltageFET FeatureREACH SVHCRadiation HardeningLead FreeContact PlatingDrain-source On Resistance-MaxView Compare
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FDMS0308ASACTIVE (Last Updated: 2 days ago)18 WeeksSurface MountSurface Mount8-PowerTDFN868.1mgSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®, SyncFET™e3yesActive1 (Unlimited)5EAR99Tin (Sn)FET General Purpose PowerMOSFET (Metal Oxide)DUALFLATNOT SPECIFIEDnot_compliantNOT SPECIFIEDR-PDSO-F512.5W Ta 50W TcSingleENHANCEMENT MODEDRAIN13 nsN-ChannelSWITCHING2.8m Ω @ 24A, 10V3V @ 1mA3000pF @ 15V24A Ta 49A Tc47nC @ 10V4.5ns4.5V 10V±20V3.7 ns29 ns49AMO-240AA20V24A30V100A66 mJ1mm6mm5mmROHS3 Compliant----------
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LAST SHIPMENTS (Last Updated: 1 week ago)-Surface MountSurface Mount8-PowerTDFN890mgSILICON-55°C~150°C TJDigi-Reel®PowerTrench®, SyncFET™e3yesObsolete1 (Unlimited)5EAR99Tin (Sn)FET General Purpose PowerMOSFET (Metal Oxide)DUALFLAT---R-PDSO-F513.3W Ta 59W TcSingleENHANCEMENT MODEDRAIN11 nsN-ChannelSWITCHING2.8m Ω @ 28A, 10V2.2V @ 1mA2825pF @ 13V28A Ta 60A Tc42nC @ 10V4ns4.5V 10V±12V3 ns33 ns60AMO-240AA12V-25V100A45 mJ---RoHS Compliant201759W1.5VSchottky Diode (Body)No SVHCNo---
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ACTIVE (Last Updated: 2 days ago)13 WeeksSurface MountSurface Mount8-PowerTDFN868.1mgSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®e3yesActive1 (Unlimited)5EAR99Tin (Sn)FET General Purpose PowerMOSFET (Metal Oxide)DUALFLAT---R-PDSO-F512.5W Ta 96W TcSingleENHANCEMENT MODEDRAIN28 nsN-ChannelSWITCHING4.8m Ω @ 17A, 10V4.5V @ 250μA6290pF @ 40V17A Ta 50A Tc95nC @ 10V23ns8V 10V±20V9 ns35 ns17AMO-240AA20V50A80V--1.05mm5.1mm5.85mmROHS3 Compliant-96W---NoLead Free--
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ACTIVE (Last Updated: 2 days ago)26 WeeksSurface MountSurface Mount8-PowerTDFN874mgSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®, SyncFET™e3yesActive1 (Unlimited)5EAR99-FET General Purpose PowerMOSFET (Metal Oxide)DUALFLATNOT SPECIFIEDnot_compliantNOT SPECIFIEDR-PDSO-F512.5W Ta 36W TcSingleENHANCEMENT MODEDRAIN10 nsN-ChannelSWITCHING5m Ω @ 18A, 10V3V @ 1mA1815pF @ 15V18A Ta 22A Tc31nC @ 10V2.3ns4.5V 10V±20V6 ns25 ns18AMO-240AA20V22A30V100A33 mJ1mm6mm5mmROHS3 Compliant-------Tin0.005Ohm
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