Fairchild/ON Semiconductor FDD6676AS

Name: FDD6676AS
Brand: Fairchild/ON Semiconductor
SKU: 2488748-FDD6676AS
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FDD6676AS

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2488748-FDD6676AS

Description:: MOSFET N-CH 30V 90A DPAK

ECAD Model:

Datasheet:: FDD6676AS

Specifications

Fairchild/ON Semiconductor FDD6676AS technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDD6676AS.

Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads Tab), SC-63
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
PowerTrench®
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
Terminal Finish
MATTE TIN
Technology
MOSFET (Metal Oxide)
Terminal Position
SINGLE
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Reach Compliance Code
unknown
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
3
JESD-30 Code
R-PSSO-G2
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
70W Ta
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
5.7m Ω @ 16A, 10V
Vgs(th) (Max) @ Id
3V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds
2.5pF @ 15V
Current - Continuous Drain (Id) @ 25°C
90A Ta
Gate Charge (Qg) (Max) @ Vgs
64nC @ 10V
Drain to Source Voltage (Vdss)
30V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Drain Current-Max (Abs) (ID)
90A
Drain-source On Resistance-Max
0.0057Ohm
Pulsed Drain Current-Max (IDM)
100A
DS Breakdown Voltage-Min
30V
Avalanche Energy Rating (Eas)
250 mJ
RoHS Status
ROHS3 Compliant

Description

FDD6676AS Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 250 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 2.5pF @ 15V.90A is the drain current of this device, which is the maximum continuous current transistor can carry.Peak drain current for this device is 100A, which is its maximum pulsed drain current.To maintain normal operation, the DS breakdown voltage should be kept above 30V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 30V.Using drive voltage (4.5V 10V) reduces this device's overall power consumption.

FDD6676AS Features
the avalanche energy rating (Eas) is 250 mJ
based on its rated peak drain current 100A.
a 30V drain to source voltage (Vdss)

FDD6676AS Applications
There are a lot of Rochester Electronics, LLC
FDD6676AS applications of single MOSFETs transistors.

Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification

FDD6676AS More Descriptions

; Transistor Type:MOSFET; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes RoHS Compliant: Yes
Coaxial Connectors (RF) - Terminators Adapter, Jack to Plug Not Applicable BNC Free Hanging (In-Line) 75 Ω 2002 2 Weeks Brass Attenuators - Interconnects 75 OHM M/F ATTENUATR
MOSFET, N, SMD, TO-252; Transistor Polarity: N Channel; Continuous Drain Current Id: 90A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0057ohm; Rds(on) Test Voltage Vgs: -; Threshold Voltage Vgs: 1.5V; Power Dissipa

Product Comparison

The three parts on the right have similar specifications to FDD6676AS.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Surface Mount

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Terminal Finish

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Case Connection

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

RoHS Status

Supplier Device Package

Base Part Number

View Compare
FDD6676AS

Fairchild/ON Semiconductor

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

YES

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®

e3

yes

Obsolete

1 (Unlimited)

2

MATTE TIN

MOSFET (Metal Oxide)

SINGLE

GULL WING

260

unknown

NOT SPECIFIED

3

R-PSSO-G2

COMMERCIAL

1

SINGLE WITH BUILT-IN DIODE

70W Ta

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

5.7m Ω @ 16A, 10V

3V @ 1mA

2.5pF @ 15V

90A Ta

64nC @ 10V

30V

4.5V 10V

±20V

90A

0.0057Ohm

100A

30V

250 mJ

ROHS3 Compliant

-

-

-
FDD6782A

Fairchild/ON Semiconductor

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

YES

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

PowerTrench®

-

-

Obsolete

1 (Unlimited)

2

-

MOSFET (Metal Oxide)

SINGLE

GULL WING

-

unknown

-

3

R-PSSO-G2

COMMERCIAL

1

SINGLE WITH BUILT-IN DIODE

3.7W Ta 31W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

10.5m Ω @ 14.9A, 10V

3V @ 250μA

1.065pF @ 13V

20A Ta

27nC @ 10V

25V

4.5V 10V

±20V

20A

0.0105Ohm

100A

25V

12 mJ

ROHS3 Compliant

-

-

FDD6676AS vs FDD6782A
FDD6N50FTF

Fairchild/ON Semiconductor

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-

-

-55°C~150°C TJ

Tape & Reel (TR)

UniFET™

-

-

Obsolete

1 (Unlimited)

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

-

-

89W Tc

-

-

N-Channel

-

1.15Ohm @ 2.75A, 10V

5V @ 250μA

960pF @ 25V

5.5A Tc

19.8nC @ 10V

500V

10V

±30V

-

-

-

-

-

-

D-Pak

FDD6N50

FDD6676AS vs FDD6N50FTF
FDD6696

Fairchild/ON Semiconductor

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-

-

-55°C~175°C TJ

Tape & Reel (TR)

PowerTrench®

-

-

Obsolete

1 (Unlimited)

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

-

-

3.8W Ta 52W Tc

-

-

N-Channel

-

8mOhm @ 13A, 10V

3V @ 250μA

1.715pF @ 15V

13A Ta 50A Tc

24nC @ 5V

30V

4.5V 10V

±16V

-

-

-

-

-

ROHS3 Compliant

D-PAK (TO-252)

-

FDD6676AS vs FDD6696