Diodes Incorporated DMN4027SSS-13
- Part Number:
- DMN4027SSS-13
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2491047-DMN4027SSS-13
- Description:
- MOSFET N-CH 40V 6A 8SO
- Datasheet:
- DMN4027SSS-13
Diodes Incorporated DMN4027SSS-13 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMN4027SSS-13.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Number of Pins8
- Weight73.992255mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2010
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations8
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- Additional FeatureHIGH RELIABILITY
- SubcategoryFET General Purpose Powers
- TechnologyMOSFET (Metal Oxide)
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count8
- Number of Elements1
- Number of Channels2
- Power Dissipation-Max1.56W Ta
- Element ConfigurationDual
- Operating ModeENHANCEMENT MODE
- Power Dissipation2.8W
- Turn On Delay Time3.1 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs27m Ω @ 7A, 10V
- Vgs(th) (Max) @ Id3V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds604pF @ 20V
- Current - Continuous Drain (Id) @ 25°C6A Ta
- Gate Charge (Qg) (Max) @ Vgs12.9nC @ 10V
- Rise Time3.1ns
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)7.5 ns
- Turn-Off Delay Time15.4 ns
- Continuous Drain Current (ID)6A
- Gate to Source Voltage (Vgs)20V
- Drain Current-Max (Abs) (ID)6A
- Drain to Source Breakdown Voltage40V
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
DMN4027SSS-13 Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 604pF @ 20V.This device has a continuous drain current (ID) of [6A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=40V, the drain-source breakdown voltage is 40V.A device's drain current is its maximum continuous current, and this device's drain current is 6A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 15.4 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 3.1 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Its overall power consumption can be reduced by using drive voltage (4.5V 10V).
DMN4027SSS-13 Features
a continuous drain current (ID) of 6A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 15.4 ns
DMN4027SSS-13 Applications
There are a lot of Diodes Incorporated
DMN4027SSS-13 applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 604pF @ 20V.This device has a continuous drain current (ID) of [6A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=40V, the drain-source breakdown voltage is 40V.A device's drain current is its maximum continuous current, and this device's drain current is 6A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 15.4 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 3.1 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Its overall power consumption can be reduced by using drive voltage (4.5V 10V).
DMN4027SSS-13 Features
a continuous drain current (ID) of 6A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 15.4 ns
DMN4027SSS-13 Applications
There are a lot of Diodes Incorporated
DMN4027SSS-13 applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
DMN4027SSS-13 More Descriptions
Trans MOSFET N-CH 40V 8A 8-Pin SO T/R
MOSFET MOSFET,N-CHANNEL 40V, 6.1A/- 8A
MOSFET N-CH 40V 6A 8SO
OEMs, CMs ONLY (NO BROKERS)
MOSFET MOSFET,N-CHANNEL 40V, 6.1A/- 8A
MOSFET N-CH 40V 6A 8SO
OEMs, CMs ONLY (NO BROKERS)
The three parts on the right have similar specifications to DMN4027SSS-13.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureSubcategoryTechnologyTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain to Source Breakdown VoltageRadiation HardeningRoHS StatusFactory Lead TimeCapacitanceBase Part NumberJESD-30 CodeCase ConnectionJEDEC-95 CodeHeightLengthWidthREACH SVHCLead FreeSupplier Device PackageMax Operating TemperatureMin Operating TemperatureDrain to Source Voltage (Vdss)Input CapacitanceDrain to Source ResistanceRds On MaxView Compare
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DMN4027SSS-13Surface MountSurface Mount8-SOIC (0.154, 3.90mm Width)873.992255mgSILICON-55°C~150°C TJTape & Reel (TR)2010e3yesObsolete1 (Unlimited)8EAR99Matte Tin (Sn)HIGH RELIABILITYFET General Purpose PowersMOSFET (Metal Oxide)GULL WING260408121.56W TaDualENHANCEMENT MODE2.8W3.1 nsN-ChannelSWITCHING27m Ω @ 7A, 10V3V @ 250μA604pF @ 20V6A Ta12.9nC @ 10V3.1ns4.5V 10V±20V7.5 ns15.4 ns6A20V6A40VNoROHS3 Compliant-------------------
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Surface MountSurface Mount8-PowerVDFN872.007789mg--55°C~150°C TJTape & Reel (TR)2015e3-Active1 (Unlimited)-EAR99Matte Tin (Sn)--MOSFET (Metal Oxide)-NOT SPECIFIEDNOT SPECIFIED--1930mW TaSingle---N-Channel-12m Ω @ 14A, 10V3V @ 250μA1810pF @ 20V11.5A Ta37nC @ 10V-4.5V 10V±20V--11.5A20V-40V-ROHS3 Compliant23 Weeks1.81nFDMN4010---------------
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Surface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-6333.949996gSILICON-55°C~150°C TJCut Tape (CT)2010e3noActive1 (Unlimited)2EAR99Matte Tin (Sn)-FET General Purpose PowerMOSFET (Metal Oxide)GULL WING260404112.12W TaSingleENHANCEMENT MODE-3.2 nsN-ChannelSWITCHING36m Ω @ 12A, 10V3V @ 250μA453pF @ 20V8.5A Ta9.2nC @ 10V11.7ns4.5V 10V±20V9.5 ns11.6 ns12.2A20V8.5A40VNoROHS3 Compliant17 Weeks--R-PSSO-G2DRAINTO-252AA2.39mm6.73mm6.22mmNo SVHCLead Free-------
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Surface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-6333.949996g--55°C~150°C TJTape & Reel (TR)2009--Discontinued1 (Unlimited)-----MOSFET (Metal Oxide)----112.19W TaSingle--7.8 nsN-Channel-15mOhm @ 14A, 10V3V @ 250μA2072pF @ 20V13.5A Ta42nC @ 10V18.5ns4.5V 10V±20V14.9 ns37.3 ns20.8A20V-40VNoROHS3 Compliant------2.39mm6.73mm6.22mm--TO-252-3150°C-55°C40V2.072nF20mOhm15 mΩ
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