Diodes Incorporated DMN4015LK3-13
- Part Number:
- DMN4015LK3-13
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2490609-DMN4015LK3-13
- Description:
- MOSFET N-CH 40V 13.5A DPAK
- Datasheet:
- DMN4015LK3
Diodes Incorporated DMN4015LK3-13 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMN4015LK3-13.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Number of Pins3
- Supplier Device PackageTO-252-3
- Weight3.949996g
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2009
- Part StatusDiscontinued
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- TechnologyMOSFET (Metal Oxide)
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max2.19W Ta
- Element ConfigurationSingle
- Turn On Delay Time7.8 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs15mOhm @ 14A, 10V
- Vgs(th) (Max) @ Id3V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds2072pF @ 20V
- Current - Continuous Drain (Id) @ 25°C13.5A Ta
- Gate Charge (Qg) (Max) @ Vgs42nC @ 10V
- Rise Time18.5ns
- Drain to Source Voltage (Vdss)40V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)14.9 ns
- Turn-Off Delay Time37.3 ns
- Continuous Drain Current (ID)20.8A
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage40V
- Input Capacitance2.072nF
- Drain to Source Resistance20mOhm
- Rds On Max15 mΩ
- Height2.39mm
- Length6.73mm
- Width6.22mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
DMN4015LK3-13 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 2072pF @ 20V.This device conducts a continuous drain current (ID) of 20.8A, which is the maximum continuous current transistor can conduct.Using VGS=40V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 40V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 37.3 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 20mOhm, which means the device is not biased.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 7.8 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.This transistor requires a drain-source voltage (Vdss) of 40V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).
DMN4015LK3-13 Features
a continuous drain current (ID) of 20.8A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 37.3 ns
single MOSFETs transistor is 20mOhm
a 40V drain to source voltage (Vdss)
DMN4015LK3-13 Applications
There are a lot of Diodes Incorporated
DMN4015LK3-13 applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 2072pF @ 20V.This device conducts a continuous drain current (ID) of 20.8A, which is the maximum continuous current transistor can conduct.Using VGS=40V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 40V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 37.3 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 20mOhm, which means the device is not biased.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 7.8 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.This transistor requires a drain-source voltage (Vdss) of 40V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).
DMN4015LK3-13 Features
a continuous drain current (ID) of 20.8A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 37.3 ns
single MOSFETs transistor is 20mOhm
a 40V drain to source voltage (Vdss)
DMN4015LK3-13 Applications
There are a lot of Diodes Incorporated
DMN4015LK3-13 applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
DMN4015LK3-13 More Descriptions
Trans MOSFET N-CH 40V 20.8A 3-Pin(2 Tab) DPAK T/R
MOSFET N-Channel 40V 20.8A TO252 | Diodes Inc DMN4015LK3-13
MOSFET N-CH 40V 13.5A TO252-3
MOSFET N-Channel 40V 20.8A TO252 | Diodes Inc DMN4015LK3-13
MOSFET N-CH 40V 13.5A TO252-3
The three parts on the right have similar specifications to DMN4015LK3-13.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageWeightOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Max Operating TemperatureMin Operating TemperatureTechnologyNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageInput CapacitanceDrain to Source ResistanceRds On MaxHeightLengthWidthRadiation HardeningRoHS StatusFactory Lead TimeJESD-609 CodeTerminal FinishPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Transistor Element MaterialPbfree CodeNumber of TerminationsECCN CodeAdditional FeatureSubcategoryTerminal PositionTerminal FormPin CountConfigurationOperating ModeTransistor ApplicationPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinREACH SVHCLead FreeJESD-30 CodeCase ConnectionDrain-source On Resistance-MaxView Compare
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DMN4015LK3-13Surface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-633TO-252-33.949996g-55°C~150°C TJTape & Reel (TR)2009Discontinued1 (Unlimited)150°C-55°CMOSFET (Metal Oxide)112.19W TaSingle7.8 nsN-Channel15mOhm @ 14A, 10V3V @ 250μA2072pF @ 20V13.5A Ta42nC @ 10V18.5ns40V4.5V 10V±20V14.9 ns37.3 ns20.8A20V40V2.072nF20mOhm15 mΩ2.39mm6.73mm6.22mmNoROHS3 Compliant-------------------------
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--SOIC--73.992255mg-Tape & Reel (TR)2012Active1 (Unlimited)---------------40V--------------ROHS3 Compliant22 Weekse3Matte Tin (Sn)26030-------------------
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Surface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8-73.992255mg-55°C~150°C TJTape & Reel (TR)2008Active1 (Unlimited)--MOSFET (Metal Oxide)111.52W Ta-5.46 nsN-Channel14m Ω @ 11.6A, 10V1.95V @ 250μA867pF @ 10V10A Ta18.85nC @ 10V14.53ns30V4.5V 10V±20V14.53 ns18.84 ns10A20V----1.5mm4.95mm3.95mmNoROHS3 Compliant16 Weekse3Matte Tin (Sn)26040SILICONyes8EAR99HIGH RELIABILITYFET General Purpose PowerDUALGULL WING8SINGLE WITH BUILT-IN DIODEENHANCEMENT MODESWITCHING50A30VNo SVHCLead Free---
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Surface MountSurface Mount8-PowerVDFN8-72.007789mg-55°C~150°C TJTape & Reel (TR)2014Active1 (Unlimited)--MOSFET (Metal Oxide)111W TaSingle8.2 nsN-Channel7.5m Ω @ 10A, 10V3V @ 250μA3537pF @ 20V14.4A Ta74nC @ 10V14.1ns40V3.3V 10V±20V24.4 ns69.7 ns14.4A20V--------ROHS3 Compliant23 Weekse3Matte Tin (Sn)26030SILICON-5EAR99HIGH RELIABILITY-DUALNO LEAD--ENHANCEMENT MODESWITCHING-40V--S-PDSO-N5DRAIN0.0075Ohm
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