DMN4015LK3-13

Diodes Incorporated DMN4015LK3-13

Part Number:
DMN4015LK3-13
Manufacturer:
Diodes Incorporated
Ventron No:
2490609-DMN4015LK3-13
Description:
MOSFET N-CH 40V 13.5A DPAK
ECAD Model:
Datasheet:
DMN4015LK3

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Specifications
Diodes Incorporated DMN4015LK3-13 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMN4015LK3-13.
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-252-3, DPak (2 Leads Tab), SC-63
  • Number of Pins
    3
  • Supplier Device Package
    TO-252-3
  • Weight
    3.949996g
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2009
  • Part Status
    Discontinued
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • Technology
    MOSFET (Metal Oxide)
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    2.19W Ta
  • Element Configuration
    Single
  • Turn On Delay Time
    7.8 ns
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    15mOhm @ 14A, 10V
  • Vgs(th) (Max) @ Id
    3V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    2072pF @ 20V
  • Current - Continuous Drain (Id) @ 25°C
    13.5A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    42nC @ 10V
  • Rise Time
    18.5ns
  • Drain to Source Voltage (Vdss)
    40V
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    14.9 ns
  • Turn-Off Delay Time
    37.3 ns
  • Continuous Drain Current (ID)
    20.8A
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    40V
  • Input Capacitance
    2.072nF
  • Drain to Source Resistance
    20mOhm
  • Rds On Max
    15 mΩ
  • Height
    2.39mm
  • Length
    6.73mm
  • Width
    6.22mm
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
Description
DMN4015LK3-13 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 2072pF @ 20V.This device conducts a continuous drain current (ID) of 20.8A, which is the maximum continuous current transistor can conduct.Using VGS=40V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 40V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 37.3 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 20mOhm, which means the device is not biased.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 7.8 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.This transistor requires a drain-source voltage (Vdss) of 40V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).

DMN4015LK3-13 Features
a continuous drain current (ID) of 20.8A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 37.3 ns
single MOSFETs transistor is 20mOhm
a 40V drain to source voltage (Vdss)


DMN4015LK3-13 Applications
There are a lot of Diodes Incorporated
DMN4015LK3-13 applications of single MOSFETs transistors.


Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
DMN4015LK3-13 More Descriptions
Trans MOSFET N-CH 40V 20.8A 3-Pin(2 Tab) DPAK T/R
MOSFET N-Channel 40V 20.8A TO252 | Diodes Inc DMN4015LK3-13
MOSFET N-CH 40V 13.5A TO252-3
Product Comparison
The three parts on the right have similar specifications to DMN4015LK3-13.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Supplier Device Package
    Weight
    Operating Temperature
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Max Operating Temperature
    Min Operating Temperature
    Technology
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    Height
    Length
    Width
    Radiation Hardening
    RoHS Status
    Factory Lead Time
    JESD-609 Code
    Terminal Finish
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Transistor Element Material
    Pbfree Code
    Number of Terminations
    ECCN Code
    Additional Feature
    Subcategory
    Terminal Position
    Terminal Form
    Pin Count
    Configuration
    Operating Mode
    Transistor Application
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    REACH SVHC
    Lead Free
    JESD-30 Code
    Case Connection
    Drain-source On Resistance-Max
    View Compare
  • DMN4015LK3-13
    DMN4015LK3-13
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    3
    TO-252-3
    3.949996g
    -55°C~150°C TJ
    Tape & Reel (TR)
    2009
    Discontinued
    1 (Unlimited)
    150°C
    -55°C
    MOSFET (Metal Oxide)
    1
    1
    2.19W Ta
    Single
    7.8 ns
    N-Channel
    15mOhm @ 14A, 10V
    3V @ 250μA
    2072pF @ 20V
    13.5A Ta
    42nC @ 10V
    18.5ns
    40V
    4.5V 10V
    ±20V
    14.9 ns
    37.3 ns
    20.8A
    20V
    40V
    2.072nF
    20mOhm
    15 mΩ
    2.39mm
    6.73mm
    6.22mm
    No
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • DMN4025LSD-13
    -
    -
    SOIC
    -
    -
    73.992255mg
    -
    Tape & Reel (TR)
    2012
    Active
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    40V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    22 Weeks
    e3
    Matte Tin (Sn)
    260
    30
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • DMN4468LSS-13
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    -
    73.992255mg
    -55°C~150°C TJ
    Tape & Reel (TR)
    2008
    Active
    1 (Unlimited)
    -
    -
    MOSFET (Metal Oxide)
    1
    1
    1.52W Ta
    -
    5.46 ns
    N-Channel
    14m Ω @ 11.6A, 10V
    1.95V @ 250μA
    867pF @ 10V
    10A Ta
    18.85nC @ 10V
    14.53ns
    30V
    4.5V 10V
    ±20V
    14.53 ns
    18.84 ns
    10A
    20V
    -
    -
    -
    -
    1.5mm
    4.95mm
    3.95mm
    No
    ROHS3 Compliant
    16 Weeks
    e3
    Matte Tin (Sn)
    260
    40
    SILICON
    yes
    8
    EAR99
    HIGH RELIABILITY
    FET General Purpose Power
    DUAL
    GULL WING
    8
    SINGLE WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    SWITCHING
    50A
    30V
    No SVHC
    Lead Free
    -
    -
    -
  • DMN4008LFG-13
    Surface Mount
    Surface Mount
    8-PowerVDFN
    8
    -
    72.007789mg
    -55°C~150°C TJ
    Tape & Reel (TR)
    2014
    Active
    1 (Unlimited)
    -
    -
    MOSFET (Metal Oxide)
    1
    1
    1W Ta
    Single
    8.2 ns
    N-Channel
    7.5m Ω @ 10A, 10V
    3V @ 250μA
    3537pF @ 20V
    14.4A Ta
    74nC @ 10V
    14.1ns
    40V
    3.3V 10V
    ±20V
    24.4 ns
    69.7 ns
    14.4A
    20V
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    23 Weeks
    e3
    Matte Tin (Sn)
    260
    30
    SILICON
    -
    5
    EAR99
    HIGH RELIABILITY
    -
    DUAL
    NO LEAD
    -
    -
    ENHANCEMENT MODE
    SWITCHING
    -
    40V
    -
    -
    S-PDSO-N5
    DRAIN
    0.0075Ohm
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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