DMN4009LK3-13

Diodes Incorporated DMN4009LK3-13

Part Number:
DMN4009LK3-13
Manufacturer:
Diodes Incorporated
Ventron No:
2490597-DMN4009LK3-13
Description:
MOSFET N-CH 40V 18A DPAK
ECAD Model:
Datasheet:
DMN4009LK3-13

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Specifications
Diodes Incorporated DMN4009LK3-13 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMN4009LK3-13.
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-252-3, DPak (2 Leads Tab), SC-63
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Manufacturer Package Identifier
    DMN4009LK3-13
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Digi-Reel®
  • Published
    2012
  • JESD-609 Code
    e3
  • Pbfree Code
    no
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Terminal Finish
    Matte Tin (Sn)
  • Subcategory
    FET General Purpose Powers
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    SINGLE
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Pin Count
    4
  • JESD-30 Code
    R-PSSO-G2
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Power Dissipation-Max
    2.19W Ta
  • Operating Mode
    ENHANCEMENT MODE
  • Case Connection
    DRAIN
  • Turn On Delay Time
    7.8 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    8.5m Ω @ 14A, 10V
  • Vgs(th) (Max) @ Id
    3V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    2072pF @ 20V
  • Current - Continuous Drain (Id) @ 25°C
    18A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    21nC @ 4.5V
  • Rise Time
    18.5ns
  • Drain to Source Voltage (Vdss)
    40V
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    14.9 ns
  • Turn-Off Delay Time
    37.3 ns
  • Continuous Drain Current (ID)
    27.6A
  • JEDEC-95 Code
    TO-252AA
  • Gate to Source Voltage (Vgs)
    20V
  • Drain-source On Resistance-Max
    0.0085Ohm
  • Pulsed Drain Current-Max (IDM)
    96.6A
  • DS Breakdown Voltage-Min
    40V
  • Height
    2.39mm
  • Length
    6.73mm
  • Width
    6.22mm
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
Description
DMN4009LK3-13 Overview
The maximum input capacitance of this device is 2072pF @ 20V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 27.6A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 37.3 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 96.6A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 7.8 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 40V.The drain-to-source voltage (Vdss) of this transistor needs to be at 40V in order to operate.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.

DMN4009LK3-13 Features
a continuous drain current (ID) of 27.6A
the turn-off delay time is 37.3 ns
based on its rated peak drain current 96.6A.
a 40V drain to source voltage (Vdss)


DMN4009LK3-13 Applications
There are a lot of Diodes Incorporated
DMN4009LK3-13 applications of single MOSFETs transistors.


Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
DMN4009LK3-13 More Descriptions
Trans MOSFET N-CH 40V 18A 3-Pin(2 Tab) DPAK T/R / MOSFET N-CH 40V 18A DPAK
MOSFET 40V 9mOhm 28A TO252 RoHSconf
OEMs, CMs ONLY (NO BROKERS)
Product Comparison
The three parts on the right have similar specifications to DMN4009LK3-13.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Manufacturer Package Identifier
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Subcategory
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    JESD-30 Code
    Number of Elements
    Configuration
    Power Dissipation-Max
    Operating Mode
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Height
    Length
    Width
    Radiation Hardening
    RoHS Status
    Factory Lead Time
    Weight
    Capacitance
    Base Part Number
    Number of Channels
    Element Configuration
    Drain to Source Breakdown Voltage
    Additional Feature
    Power Dissipation
    Drain Current-Max (Abs) (ID)
    View Compare
  • DMN4009LK3-13
    DMN4009LK3-13
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    3
    SILICON
    DMN4009LK3-13
    -55°C~150°C TJ
    Digi-Reel®
    2012
    e3
    no
    Obsolete
    1 (Unlimited)
    2
    EAR99
    Matte Tin (Sn)
    FET General Purpose Powers
    MOSFET (Metal Oxide)
    SINGLE
    GULL WING
    260
    40
    4
    R-PSSO-G2
    1
    SINGLE WITH BUILT-IN DIODE
    2.19W Ta
    ENHANCEMENT MODE
    DRAIN
    7.8 ns
    N-Channel
    SWITCHING
    8.5m Ω @ 14A, 10V
    3V @ 250μA
    2072pF @ 20V
    18A Ta
    21nC @ 4.5V
    18.5ns
    40V
    4.5V 10V
    ±20V
    14.9 ns
    37.3 ns
    27.6A
    TO-252AA
    20V
    0.0085Ohm
    96.6A
    40V
    2.39mm
    6.73mm
    6.22mm
    No
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • DMN4010LFG-7
    Surface Mount
    Surface Mount
    8-PowerVDFN
    8
    -
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    2015
    e3
    -
    Active
    1 (Unlimited)
    -
    EAR99
    Matte Tin (Sn)
    -
    MOSFET (Metal Oxide)
    -
    -
    NOT SPECIFIED
    NOT SPECIFIED
    -
    -
    -
    -
    930mW Ta
    -
    -
    -
    N-Channel
    -
    12m Ω @ 14A, 10V
    3V @ 250μA
    1810pF @ 20V
    11.5A Ta
    37nC @ 10V
    -
    -
    4.5V 10V
    ±20V
    -
    -
    11.5A
    -
    20V
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    23 Weeks
    72.007789mg
    1.81nF
    DMN4010
    1
    Single
    40V
    -
    -
    -
  • DMN4027SSS-13
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    SILICON
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    2010
    e3
    yes
    Obsolete
    1 (Unlimited)
    8
    EAR99
    Matte Tin (Sn)
    FET General Purpose Powers
    MOSFET (Metal Oxide)
    -
    GULL WING
    260
    40
    8
    -
    1
    -
    1.56W Ta
    ENHANCEMENT MODE
    -
    3.1 ns
    N-Channel
    SWITCHING
    27m Ω @ 7A, 10V
    3V @ 250μA
    604pF @ 20V
    6A Ta
    12.9nC @ 10V
    3.1ns
    -
    4.5V 10V
    ±20V
    7.5 ns
    15.4 ns
    6A
    -
    20V
    -
    -
    -
    -
    -
    -
    No
    ROHS3 Compliant
    -
    73.992255mg
    -
    -
    2
    Dual
    40V
    HIGH RELIABILITY
    2.8W
    6A
  • DMN4008LFG-13
    Surface Mount
    Surface Mount
    8-PowerVDFN
    8
    SILICON
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    2014
    e3
    -
    Active
    1 (Unlimited)
    5
    EAR99
    Matte Tin (Sn)
    -
    MOSFET (Metal Oxide)
    DUAL
    NO LEAD
    260
    30
    -
    S-PDSO-N5
    1
    -
    1W Ta
    ENHANCEMENT MODE
    DRAIN
    8.2 ns
    N-Channel
    SWITCHING
    7.5m Ω @ 10A, 10V
    3V @ 250μA
    3537pF @ 20V
    14.4A Ta
    74nC @ 10V
    14.1ns
    40V
    3.3V 10V
    ±20V
    24.4 ns
    69.7 ns
    14.4A
    -
    20V
    0.0075Ohm
    -
    40V
    -
    -
    -
    -
    ROHS3 Compliant
    23 Weeks
    72.007789mg
    -
    -
    1
    Single
    -
    HIGH RELIABILITY
    -
    -
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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