Diodes Incorporated DMN4009LK3-13
- Part Number:
- DMN4009LK3-13
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2490597-DMN4009LK3-13
- Description:
- MOSFET N-CH 40V 18A DPAK
- Datasheet:
- DMN4009LK3-13
Diodes Incorporated DMN4009LK3-13 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMN4009LK3-13.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Number of Pins3
- Transistor Element MaterialSILICON
- Manufacturer Package IdentifierDMN4009LK3-13
- Operating Temperature-55°C~150°C TJ
- PackagingDigi-Reel®
- Published2012
- JESD-609 Codee3
- Pbfree Codeno
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- SubcategoryFET General Purpose Powers
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionSINGLE
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count4
- JESD-30 CodeR-PSSO-G2
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max2.19W Ta
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Turn On Delay Time7.8 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs8.5m Ω @ 14A, 10V
- Vgs(th) (Max) @ Id3V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds2072pF @ 20V
- Current - Continuous Drain (Id) @ 25°C18A Ta
- Gate Charge (Qg) (Max) @ Vgs21nC @ 4.5V
- Rise Time18.5ns
- Drain to Source Voltage (Vdss)40V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)14.9 ns
- Turn-Off Delay Time37.3 ns
- Continuous Drain Current (ID)27.6A
- JEDEC-95 CodeTO-252AA
- Gate to Source Voltage (Vgs)20V
- Drain-source On Resistance-Max0.0085Ohm
- Pulsed Drain Current-Max (IDM)96.6A
- DS Breakdown Voltage-Min40V
- Height2.39mm
- Length6.73mm
- Width6.22mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
DMN4009LK3-13 Overview
The maximum input capacitance of this device is 2072pF @ 20V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 27.6A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 37.3 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 96.6A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 7.8 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 40V.The drain-to-source voltage (Vdss) of this transistor needs to be at 40V in order to operate.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.
DMN4009LK3-13 Features
a continuous drain current (ID) of 27.6A
the turn-off delay time is 37.3 ns
based on its rated peak drain current 96.6A.
a 40V drain to source voltage (Vdss)
DMN4009LK3-13 Applications
There are a lot of Diodes Incorporated
DMN4009LK3-13 applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
The maximum input capacitance of this device is 2072pF @ 20V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 27.6A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 37.3 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 96.6A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 7.8 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 40V.The drain-to-source voltage (Vdss) of this transistor needs to be at 40V in order to operate.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.
DMN4009LK3-13 Features
a continuous drain current (ID) of 27.6A
the turn-off delay time is 37.3 ns
based on its rated peak drain current 96.6A.
a 40V drain to source voltage (Vdss)
DMN4009LK3-13 Applications
There are a lot of Diodes Incorporated
DMN4009LK3-13 applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
DMN4009LK3-13 More Descriptions
Trans MOSFET N-CH 40V 18A 3-Pin(2 Tab) DPAK T/R / MOSFET N-CH 40V 18A DPAK
MOSFET 40V 9mOhm 28A TO252 RoHSconf
OEMs, CMs ONLY (NO BROKERS)
MOSFET 40V 9mOhm 28A TO252 RoHSconf
OEMs, CMs ONLY (NO BROKERS)
The three parts on the right have similar specifications to DMN4009LK3-13.
-
ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialManufacturer Package IdentifierOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeNumber of ElementsConfigurationPower Dissipation-MaxOperating ModeCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)JEDEC-95 CodeGate to Source Voltage (Vgs)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinHeightLengthWidthRadiation HardeningRoHS StatusFactory Lead TimeWeightCapacitanceBase Part NumberNumber of ChannelsElement ConfigurationDrain to Source Breakdown VoltageAdditional FeaturePower DissipationDrain Current-Max (Abs) (ID)View Compare
-
DMN4009LK3-13Surface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-633SILICONDMN4009LK3-13-55°C~150°C TJDigi-Reel®2012e3noObsolete1 (Unlimited)2EAR99Matte Tin (Sn)FET General Purpose PowersMOSFET (Metal Oxide)SINGLEGULL WING260404R-PSSO-G21SINGLE WITH BUILT-IN DIODE2.19W TaENHANCEMENT MODEDRAIN7.8 nsN-ChannelSWITCHING8.5m Ω @ 14A, 10V3V @ 250μA2072pF @ 20V18A Ta21nC @ 4.5V18.5ns40V4.5V 10V±20V14.9 ns37.3 ns27.6ATO-252AA20V0.0085Ohm96.6A40V2.39mm6.73mm6.22mmNoROHS3 Compliant-----------
-
Surface MountSurface Mount8-PowerVDFN8---55°C~150°C TJTape & Reel (TR)2015e3-Active1 (Unlimited)-EAR99Matte Tin (Sn)-MOSFET (Metal Oxide)--NOT SPECIFIEDNOT SPECIFIED----930mW Ta---N-Channel-12m Ω @ 14A, 10V3V @ 250μA1810pF @ 20V11.5A Ta37nC @ 10V--4.5V 10V±20V--11.5A-20V-------ROHS3 Compliant23 Weeks72.007789mg1.81nFDMN40101Single40V---
-
Surface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8SILICON--55°C~150°C TJTape & Reel (TR)2010e3yesObsolete1 (Unlimited)8EAR99Matte Tin (Sn)FET General Purpose PowersMOSFET (Metal Oxide)-GULL WING260408-1-1.56W TaENHANCEMENT MODE-3.1 nsN-ChannelSWITCHING27m Ω @ 7A, 10V3V @ 250μA604pF @ 20V6A Ta12.9nC @ 10V3.1ns-4.5V 10V±20V7.5 ns15.4 ns6A-20V------NoROHS3 Compliant-73.992255mg--2Dual40VHIGH RELIABILITY2.8W6A
-
Surface MountSurface Mount8-PowerVDFN8SILICON--55°C~150°C TJTape & Reel (TR)2014e3-Active1 (Unlimited)5EAR99Matte Tin (Sn)-MOSFET (Metal Oxide)DUALNO LEAD26030-S-PDSO-N51-1W TaENHANCEMENT MODEDRAIN8.2 nsN-ChannelSWITCHING7.5m Ω @ 10A, 10V3V @ 250μA3537pF @ 20V14.4A Ta74nC @ 10V14.1ns40V3.3V 10V±20V24.4 ns69.7 ns14.4A-20V0.0075Ohm-40V----ROHS3 Compliant23 Weeks72.007789mg--1Single-HIGH RELIABILITY--
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
20 March 2024
L9110S Advantages, Pinout, Working Principle and Application
Ⅰ. L9110S overviewⅡ. Advantages of L9110SⅢ. L9110S pin configurationⅣ. Hardware introduction of L9110S motor drive moduleⅤ. Working principle of L9110S motor drive moduleⅥ. L9110S application circuitⅦ. How to... -
20 March 2024
PCF8563 Alternatives, Characteristics, Functions and More
Ⅰ. Introduction to PCF8563Ⅱ. Characteristics of PCF8563Ⅲ. Main functions of PCF8563Ⅳ. Block diagram of PCF8563Ⅴ. How does PCF8563 work?Ⅵ. Application circuit of PCF8563Ⅶ. Limiting values of PCF8563Ⅷ. How... -
21 March 2024
RC0402FR-075K1L Characteristics, Specifications, Construction and Other Details
Ⅰ. Overview of RC0402FR-075K1LⅡ. Characteristics of RC0402FR-075K1LⅢ. Specifications of RC0402FR-075K1LⅣ. Construction of RC0402FR-075K1LⅤ. Application of RC0402FR-075K1LⅥ. Inventory history of RC0402FR-075K1LⅦ. Manufacturer of RC0402FR-075K1LⅧ. How to use RC0402FR-075K1L resistor... -
21 March 2024
A Comprehensive Guide to AO3400 Field-Effect Transistor
Ⅰ. Introduction to AO3400Ⅱ. AO3400 technical parametersⅢ. AO3400 symbol, footprint and pin configurationⅣ. AO3400 principle of operationⅤ. What is the typical circuit application of AO3400?Ⅵ. Manufacturer of AO3400Ⅶ....
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.