Diodes Incorporated DMN4468LSS-13
- Part Number:
- DMN4468LSS-13
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2485439-DMN4468LSS-13
- Description:
- MOSFET N CH 30V 10A 8SOP
- Datasheet:
- DMN4468LSS-13
Diodes Incorporated DMN4468LSS-13 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMN4468LSS-13.
- Factory Lead Time16 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Number of Pins8
- Weight73.992255mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2008
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations8
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- Additional FeatureHIGH RELIABILITY
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count8
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Number of Channels1
- Power Dissipation-Max1.52W Ta
- Operating ModeENHANCEMENT MODE
- Turn On Delay Time5.46 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs14m Ω @ 11.6A, 10V
- Vgs(th) (Max) @ Id1.95V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds867pF @ 10V
- Current - Continuous Drain (Id) @ 25°C10A Ta
- Gate Charge (Qg) (Max) @ Vgs18.85nC @ 10V
- Rise Time14.53ns
- Drain to Source Voltage (Vdss)30V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)14.53 ns
- Turn-Off Delay Time18.84 ns
- Continuous Drain Current (ID)10A
- Gate to Source Voltage (Vgs)20V
- Pulsed Drain Current-Max (IDM)50A
- DS Breakdown Voltage-Min30V
- Height1.5mm
- Length4.95mm
- Width3.95mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
DMN4468LSS-13 Overview
The maximum input capacitance of this device is 867pF @ 10V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 10A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 18.84 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 50A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 5.46 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 30V.The drain-to-source voltage (Vdss) of this transistor needs to be at 30V in order to operate.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.
DMN4468LSS-13 Features
a continuous drain current (ID) of 10A
the turn-off delay time is 18.84 ns
based on its rated peak drain current 50A.
a 30V drain to source voltage (Vdss)
DMN4468LSS-13 Applications
There are a lot of Diodes Incorporated
DMN4468LSS-13 applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
The maximum input capacitance of this device is 867pF @ 10V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 10A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 18.84 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 50A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 5.46 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 30V.The drain-to-source voltage (Vdss) of this transistor needs to be at 30V in order to operate.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.
DMN4468LSS-13 Features
a continuous drain current (ID) of 10A
the turn-off delay time is 18.84 ns
based on its rated peak drain current 50A.
a 30V drain to source voltage (Vdss)
DMN4468LSS-13 Applications
There are a lot of Diodes Incorporated
DMN4468LSS-13 applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
DMN4468LSS-13 More Descriptions
Mosfet, N-Ch, 30V, 10A, Soic Rohs Compliant: Yes |Diodes Inc. DMN4468LSS-13
Trans MOSFET N-CH 30V 10A 8-Pin SOP T/R - Tape and Reel
N-CHANNEL ENHANCEMENT MODE MOSFET, 30V VDS, 20±V VGSDiodes Inc SCT
Trans MOSFET N-CH 30V 10A 8-Pin SOP T/R - Tape and Reel
N-CHANNEL ENHANCEMENT MODE MOSFET, 30V VDS, 20±V VGSDiodes Inc SCT
The three parts on the right have similar specifications to DMN4468LSS-13.
-
ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureSubcategoryTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountNumber of ElementsConfigurationNumber of ChannelsPower Dissipation-MaxOperating ModeTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Pulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeElement ConfigurationPower DissipationDrain Current-Max (Abs) (ID)Drain to Source Breakdown VoltageManufacturer Package IdentifierJESD-30 CodeCase ConnectionJEDEC-95 CodeDrain-source On Resistance-MaxView Compare
-
DMN4468LSS-1316 WeeksSurface MountSurface Mount8-SOIC (0.154, 3.90mm Width)873.992255mgSILICON-55°C~150°C TJTape & Reel (TR)2008e3yesActive1 (Unlimited)8EAR99Matte Tin (Sn)HIGH RELIABILITYFET General Purpose PowerMOSFET (Metal Oxide)DUALGULL WING2604081SINGLE WITH BUILT-IN DIODE11.52W TaENHANCEMENT MODE5.46 nsN-ChannelSWITCHING14m Ω @ 11.6A, 10V1.95V @ 250μA867pF @ 10V10A Ta18.85nC @ 10V14.53ns30V4.5V 10V±20V14.53 ns18.84 ns10A20V50A30V1.5mm4.95mm3.95mmNo SVHCNoROHS3 CompliantLead Free----------
-
-Surface MountSurface Mount8-SOIC (0.154, 3.90mm Width)873.992255mgSILICON-55°C~150°C TJTape & Reel (TR)2010e3yesObsolete1 (Unlimited)8EAR99Matte Tin (Sn)HIGH RELIABILITYFET General Purpose PowersMOSFET (Metal Oxide)-GULL WING2604081-21.56W TaENHANCEMENT MODE3.1 nsN-ChannelSWITCHING27m Ω @ 7A, 10V3V @ 250μA604pF @ 20V6A Ta12.9nC @ 10V3.1ns-4.5V 10V±20V7.5 ns15.4 ns6A20V------NoROHS3 Compliant-Dual2.8W6A40V-----
-
-Surface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-633-SILICON-55°C~150°C TJDigi-Reel®2012e3noObsolete1 (Unlimited)2EAR99Matte Tin (Sn)-FET General Purpose PowersMOSFET (Metal Oxide)SINGLEGULL WING2604041SINGLE WITH BUILT-IN DIODE-2.19W TaENHANCEMENT MODE7.8 nsN-ChannelSWITCHING8.5m Ω @ 14A, 10V3V @ 250μA2072pF @ 20V18A Ta21nC @ 4.5V18.5ns40V4.5V 10V±20V14.9 ns37.3 ns27.6A20V96.6A40V2.39mm6.73mm6.22mm-NoROHS3 Compliant-----DMN4009LK3-13R-PSSO-G2DRAINTO-252AA0.0085Ohm
-
22 Weeks--SOIC-73.992255mg--Tape & Reel (TR)2012e3-Active1 (Unlimited)--Matte Tin (Sn)-----26030---------------40V-------------ROHS3 Compliant----------
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
01 December 2023
LM2575 Adjustable Voltage Regulator Manufacturer, Layout Guidelines, Applications and Other Details
Ⅰ. What is LM2575?Ⅱ. Manufacturer of LM2575 voltage regulatorⅢ. What are the features of LM2575 voltage regulator?Ⅳ. The pin configuration of LM2575 voltage regulatorⅤ. How does the LM2575... -
01 December 2023
KA3525A PWM Controller Symbol, Equivalents, Working Principle and Applications
Ⅰ. What is PWM controller?Ⅱ. Overview of KA3525A PWM controllerⅢ. KA3525A symbol, footprint and pin configurationⅣ. Technical parameters of KA3525AⅤ. How does the KA3525A PWM controller work?Ⅵ. What... -
04 December 2023
TJA1043 CAN Transceiver: Features, Working Modes, Specifications and Applications
Ⅰ. Overview of TJA1043Ⅱ. What are the features of TJA1043 CAN transceiver?Ⅲ. Pin configuration of TJA1043 CAN transceiverⅣ. Working modes of TJA1043 CAN transceiverⅤ. How does the TJA1043... -
04 December 2023
An Overview of L297 Stepper Motor Controller
Ⅰ. What is a stepper motor driver?Ⅱ. Overview of L297Ⅲ. What are the features of L297 stepper motor controller?Ⅳ. Pin configuration of L297 stepper motor controllerⅤ. Structure and...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.