DMN4468LSS-13

Diodes Incorporated DMN4468LSS-13

Part Number:
DMN4468LSS-13
Manufacturer:
Diodes Incorporated
Ventron No:
2485439-DMN4468LSS-13
Description:
MOSFET N CH 30V 10A 8SOP
ECAD Model:
Datasheet:
DMN4468LSS-13

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Specifications
Diodes Incorporated DMN4468LSS-13 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMN4468LSS-13.
  • Factory Lead Time
    16 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-SOIC (0.154, 3.90mm Width)
  • Number of Pins
    8
  • Weight
    73.992255mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2008
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    8
  • ECCN Code
    EAR99
  • Terminal Finish
    Matte Tin (Sn)
  • Additional Feature
    HIGH RELIABILITY
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Pin Count
    8
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Number of Channels
    1
  • Power Dissipation-Max
    1.52W Ta
  • Operating Mode
    ENHANCEMENT MODE
  • Turn On Delay Time
    5.46 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    14m Ω @ 11.6A, 10V
  • Vgs(th) (Max) @ Id
    1.95V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    867pF @ 10V
  • Current - Continuous Drain (Id) @ 25°C
    10A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    18.85nC @ 10V
  • Rise Time
    14.53ns
  • Drain to Source Voltage (Vdss)
    30V
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    14.53 ns
  • Turn-Off Delay Time
    18.84 ns
  • Continuous Drain Current (ID)
    10A
  • Gate to Source Voltage (Vgs)
    20V
  • Pulsed Drain Current-Max (IDM)
    50A
  • DS Breakdown Voltage-Min
    30V
  • Height
    1.5mm
  • Length
    4.95mm
  • Width
    3.95mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
DMN4468LSS-13 Overview
The maximum input capacitance of this device is 867pF @ 10V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 10A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 18.84 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 50A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 5.46 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 30V.The drain-to-source voltage (Vdss) of this transistor needs to be at 30V in order to operate.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.

DMN4468LSS-13 Features
a continuous drain current (ID) of 10A
the turn-off delay time is 18.84 ns
based on its rated peak drain current 50A.
a 30V drain to source voltage (Vdss)


DMN4468LSS-13 Applications
There are a lot of Diodes Incorporated
DMN4468LSS-13 applications of single MOSFETs transistors.


Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
DMN4468LSS-13 More Descriptions
Mosfet, N-Ch, 30V, 10A, Soic Rohs Compliant: Yes |Diodes Inc. DMN4468LSS-13
Trans MOSFET N-CH 30V 10A 8-Pin SOP T/R - Tape and Reel
N-CHANNEL ENHANCEMENT MODE MOSFET, 30V VDS, 20±V VGSDiodes Inc SCT
Product Comparison
The three parts on the right have similar specifications to DMN4468LSS-13.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Additional Feature
    Subcategory
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Number of Elements
    Configuration
    Number of Channels
    Power Dissipation-Max
    Operating Mode
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Element Configuration
    Power Dissipation
    Drain Current-Max (Abs) (ID)
    Drain to Source Breakdown Voltage
    Manufacturer Package Identifier
    JESD-30 Code
    Case Connection
    JEDEC-95 Code
    Drain-source On Resistance-Max
    View Compare
  • DMN4468LSS-13
    DMN4468LSS-13
    16 Weeks
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    73.992255mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2008
    e3
    yes
    Active
    1 (Unlimited)
    8
    EAR99
    Matte Tin (Sn)
    HIGH RELIABILITY
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    40
    8
    1
    SINGLE WITH BUILT-IN DIODE
    1
    1.52W Ta
    ENHANCEMENT MODE
    5.46 ns
    N-Channel
    SWITCHING
    14m Ω @ 11.6A, 10V
    1.95V @ 250μA
    867pF @ 10V
    10A Ta
    18.85nC @ 10V
    14.53ns
    30V
    4.5V 10V
    ±20V
    14.53 ns
    18.84 ns
    10A
    20V
    50A
    30V
    1.5mm
    4.95mm
    3.95mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • DMN4027SSS-13
    -
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    73.992255mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2010
    e3
    yes
    Obsolete
    1 (Unlimited)
    8
    EAR99
    Matte Tin (Sn)
    HIGH RELIABILITY
    FET General Purpose Powers
    MOSFET (Metal Oxide)
    -
    GULL WING
    260
    40
    8
    1
    -
    2
    1.56W Ta
    ENHANCEMENT MODE
    3.1 ns
    N-Channel
    SWITCHING
    27m Ω @ 7A, 10V
    3V @ 250μA
    604pF @ 20V
    6A Ta
    12.9nC @ 10V
    3.1ns
    -
    4.5V 10V
    ±20V
    7.5 ns
    15.4 ns
    6A
    20V
    -
    -
    -
    -
    -
    -
    No
    ROHS3 Compliant
    -
    Dual
    2.8W
    6A
    40V
    -
    -
    -
    -
    -
  • DMN4009LK3-13
    -
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    3
    -
    SILICON
    -55°C~150°C TJ
    Digi-Reel®
    2012
    e3
    no
    Obsolete
    1 (Unlimited)
    2
    EAR99
    Matte Tin (Sn)
    -
    FET General Purpose Powers
    MOSFET (Metal Oxide)
    SINGLE
    GULL WING
    260
    40
    4
    1
    SINGLE WITH BUILT-IN DIODE
    -
    2.19W Ta
    ENHANCEMENT MODE
    7.8 ns
    N-Channel
    SWITCHING
    8.5m Ω @ 14A, 10V
    3V @ 250μA
    2072pF @ 20V
    18A Ta
    21nC @ 4.5V
    18.5ns
    40V
    4.5V 10V
    ±20V
    14.9 ns
    37.3 ns
    27.6A
    20V
    96.6A
    40V
    2.39mm
    6.73mm
    6.22mm
    -
    No
    ROHS3 Compliant
    -
    -
    -
    -
    -
    DMN4009LK3-13
    R-PSSO-G2
    DRAIN
    TO-252AA
    0.0085Ohm
  • DMN4025LSD-13
    22 Weeks
    -
    -
    SOIC
    -
    73.992255mg
    -
    -
    Tape & Reel (TR)
    2012
    e3
    -
    Active
    1 (Unlimited)
    -
    -
    Matte Tin (Sn)
    -
    -
    -
    -
    -
    260
    30
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    40V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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