Diodes Incorporated DMN4025LSD-13

Name: DMN4025LSD-13
Brand: Diodes Incorporated
SKU: 2485814-DMN4025LSD-13
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: DMN4025LSD-13

Manufacturer:: Diodes Incorporated

Ventron No:: 2485814-DMN4025LSD-13

Description:: MOSFET N-CH 40V 8-SOIC

ECAD Model:

Datasheet:: DMN4025LSD-13

Specifications

Diodes Incorporated DMN4025LSD-13 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMN4025LSD-13.

Factory Lead Time
22 Weeks
Package / Case
SOIC
Weight
73.992255mg
Packaging
Tape & Reel (TR)
Published
2012
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Terminal Finish
Matte Tin (Sn)
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
30
Drain to Source Voltage (Vdss)
40V
RoHS Status
ROHS3 Compliant

Description

DMN4025LSD-13 Overview
The transistor must receive a 40V drain to source voltage (Vdss) in order to function.

DMN4025LSD-13 Features
a 40V drain to source voltage (Vdss)

DMN4025LSD-13 Applications
There are a lot of Diodes Incorporated
DMN4025LSD-13 applications of single MOSFETs transistors.

DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.

DMN4025LSD-13 More Descriptions

MOSFET MOSFET BVDSS: 31V-40 1V-40V SO-8 T&R 2.5K
MOSFET N-CH 40V 8-SOIC

Product Comparison

The three parts on the right have similar specifications to DMN4025LSD-13.

Image

Part Number

Manufacturer

Factory Lead Time

Package / Case

Weight

Packaging

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Terminal Finish

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Drain to Source Voltage (Vdss)

RoHS Status

Mount

Mounting Type

Number of Pins

Operating Temperature

ECCN Code

Capacitance

Technology

Base Part Number

Number of Channels

Power Dissipation-Max

Element Configuration

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Transistor Element Material

Pbfree Code

Number of Terminations

Additional Feature

Subcategory

Terminal Form

Pin Count

Number of Elements

Operating Mode

Power Dissipation

Turn On Delay Time

Transistor Application

Rise Time

Fall Time (Typ)

Turn-Off Delay Time

Drain Current-Max (Abs) (ID)

Radiation Hardening

Supplier Device Package

Max Operating Temperature

Min Operating Temperature

Input Capacitance

Drain to Source Resistance

Rds On Max

Height

Length

Width

View Compare
DMN4025LSD-13

Diodes Incorporated

22 Weeks

SOIC

73.992255mg

Tape & Reel (TR)

2012

e3

Active

1 (Unlimited)

Matte Tin (Sn)

260

30

40V

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
DMN4010LFG-7

Diodes Incorporated

23 Weeks

8-PowerVDFN

72.007789mg

Tape & Reel (TR)

2015

e3

Active

1 (Unlimited)

Matte Tin (Sn)

NOT SPECIFIED

NOT SPECIFIED

-

ROHS3 Compliant

Surface Mount

Surface Mount

8

-55°C~150°C TJ

EAR99

1.81nF

MOSFET (Metal Oxide)

DMN4010

1

930mW Ta

Single

N-Channel

12m Ω @ 14A, 10V

3V @ 250μA

1810pF @ 20V

11.5A Ta

37nC @ 10V

4.5V 10V

±20V

11.5A

20V

40V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

DMN4025LSD-13 vs DMN4010LFG-7
DMN4027SSS-13

Diodes Incorporated

-

8-SOIC (0.154, 3.90mm Width)

73.992255mg

Tape & Reel (TR)

2010

e3

Obsolete

1 (Unlimited)

Matte Tin (Sn)

260

40

-

ROHS3 Compliant

Surface Mount

Surface Mount

8

-55°C~150°C TJ

EAR99

-

MOSFET (Metal Oxide)

-

2

1.56W Ta

Dual

N-Channel

27m Ω @ 7A, 10V

3V @ 250μA

604pF @ 20V

6A Ta

12.9nC @ 10V

4.5V 10V

±20V

6A

20V

40V

SILICON

yes

8

HIGH RELIABILITY

FET General Purpose Powers

GULL WING

8

1

ENHANCEMENT MODE

2.8W

3.1 ns

SWITCHING

3.1ns

7.5 ns

15.4 ns

6A

No

-

-

-

-

-

-

-

-

-

DMN4025LSD-13 vs DMN4027SSS-13
DMN4015LK3-13

Diodes Incorporated

-

TO-252-3, DPak (2 Leads Tab), SC-63

3.949996g

Tape & Reel (TR)

2009

-

Discontinued

1 (Unlimited)

-

-

-

40V

ROHS3 Compliant

Surface Mount

Surface Mount

3

-55°C~150°C TJ

-

-

MOSFET (Metal Oxide)

-

1

2.19W Ta

Single

N-Channel

15mOhm @ 14A, 10V

3V @ 250μA

2072pF @ 20V

13.5A Ta

42nC @ 10V

4.5V 10V

±20V

20.8A

20V

40V

-

-

-

-

-

-

-

1

-

-

7.8 ns

-

18.5ns

14.9 ns

37.3 ns

-

No

TO-252-3

150°C

-55°C

2.072nF

20mOhm

15 mΩ

2.39mm

6.73mm

6.22mm

DMN4025LSD-13 vs DMN4015LK3-13