Diodes Incorporated DMN4036LK3-13

Name: DMN4036LK3-13
Brand: Diodes Incorporated
SKU: 2848797-DMN4036LK3-13
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: DMN4036LK3-13

Manufacturer:: Diodes Incorporated

Ventron No:: 2848797-DMN4036LK3-13

Description:: MOSFET N-CH 40V 8.5A DPAK

ECAD Model:

Datasheet:: DMN4036LK3-13

Specifications

Diodes Incorporated DMN4036LK3-13 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMN4036LK3-13.

Factory Lead Time
17 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads Tab), SC-63
Number of Pins
3
Weight
3.949996g
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Cut Tape (CT)
Published
2010
JESD-609 Code
e3
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
40
Pin Count
4
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
2.12W Ta
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Turn On Delay Time
3.2 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
36m Ω @ 12A, 10V
Vgs(th) (Max) @ Id
3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
453pF @ 20V
Current - Continuous Drain (Id) @ 25°C
8.5A Ta
Gate Charge (Qg) (Max) @ Vgs
9.2nC @ 10V
Rise Time
11.7ns
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
9.5 ns
Turn-Off Delay Time
11.6 ns
Continuous Drain Current (ID)
12.2A
JEDEC-95 Code
TO-252AA
Gate to Source Voltage (Vgs)
20V
Drain Current-Max (Abs) (ID)
8.5A
Drain to Source Breakdown Voltage
40V
Height
2.39mm
Length
6.73mm
Width
6.22mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

DMN4036LK3-13 Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 453pF @ 20V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 12.2A.With a drain-source breakdown voltage of 40V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 40V.8.5A is the drain current of this device, which is the maximum continuous current transistor can carry.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 11.6 ns.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 3.2 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Using drive voltage (4.5V 10V) reduces this device's overall power consumption.

DMN4036LK3-13 Features
a continuous drain current (ID) of 12.2A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 11.6 ns

DMN4036LK3-13 Applications
There are a lot of Diodes Incorporated
DMN4036LK3-13 applications of single MOSFETs transistors.

Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification

DMN4036LK3-13 More Descriptions

Mosfet, N-Ch, 40V, 8.5A, To-252 Rohs Compliant: Yes |Diodes Inc. DMN4036LK3-13
Trans MOSFET N-CH 40V 12.2A 3-Pin(2 Tab) DPAK T/R
N-CHANNEL ENHANCEMENT MODE MOSFET, 20±V VGSDiodes Inc SCT
MOSFET, N-CH, 40V, 8.5A, TO-252;

Product Comparison

The three parts on the right have similar specifications to DMN4036LK3-13.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Subcategory

Technology

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Number of Elements

Number of Channels

Power Dissipation-Max

Element Configuration

Operating Mode

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain Current-Max (Abs) (ID)

Drain to Source Breakdown Voltage

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Supplier Device Package

Max Operating Temperature

Min Operating Temperature

Drain to Source Voltage (Vdss)

Input Capacitance

Drain to Source Resistance

Rds On Max

Manufacturer Package Identifier

Terminal Position

Configuration

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

View Compare
DMN4036LK3-13

Diodes Incorporated

17 Weeks

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

3

3.949996g

SILICON

-55°C~150°C TJ

Cut Tape (CT)

2010

e3

no

Active

1 (Unlimited)

2

EAR99

Matte Tin (Sn)

FET General Purpose Power

MOSFET (Metal Oxide)

GULL WING

260

40

4

R-PSSO-G2

1

1

2.12W Ta

Single

ENHANCEMENT MODE

DRAIN

3.2 ns

N-Channel

SWITCHING

36m Ω @ 12A, 10V

3V @ 250μA

453pF @ 20V

8.5A Ta

9.2nC @ 10V

11.7ns

4.5V 10V

±20V

9.5 ns

11.6 ns

12.2A

TO-252AA

20V

8.5A

40V

2.39mm

6.73mm

6.22mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-
DMN4015LK3-13

Diodes Incorporated

-

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

3

3.949996g

-

-55°C~150°C TJ

Tape & Reel (TR)

2009

-

-

Discontinued

1 (Unlimited)

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

1

1

2.19W Ta

Single

-

-

7.8 ns

N-Channel

-

15mOhm @ 14A, 10V

3V @ 250μA

2072pF @ 20V

13.5A Ta

42nC @ 10V

18.5ns

4.5V 10V

±20V

14.9 ns

37.3 ns

20.8A

-

20V

-

40V

2.39mm

6.73mm

6.22mm

-

No

ROHS3 Compliant

-

TO-252-3

150°C

-55°C

40V

2.072nF

20mOhm

15 mΩ

-

-

-

-

-

-

DMN4036LK3-13 vs DMN4015LK3-13
DMN4009LK3-13

Diodes Incorporated

-

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

3

-

SILICON

-55°C~150°C TJ

Digi-Reel®

2012

e3

no

Obsolete

1 (Unlimited)

2

EAR99

Matte Tin (Sn)

FET General Purpose Powers

MOSFET (Metal Oxide)

GULL WING

260

40

4

R-PSSO-G2

1

-

2.19W Ta

-

ENHANCEMENT MODE

DRAIN

7.8 ns

N-Channel

SWITCHING

8.5m Ω @ 14A, 10V

3V @ 250μA

2072pF @ 20V

18A Ta

21nC @ 4.5V

18.5ns

4.5V 10V

±20V

14.9 ns

37.3 ns

27.6A

TO-252AA

20V

-

-

2.39mm

6.73mm

6.22mm

-

No

ROHS3 Compliant

-

-

-

-

40V

-

-

-

DMN4009LK3-13

SINGLE

SINGLE WITH BUILT-IN DIODE

0.0085Ohm

96.6A

40V

DMN4036LK3-13 vs DMN4009LK3-13
DMN4025LSD-13

Diodes Incorporated

22 Weeks

-

-

SOIC

-

73.992255mg

-

-

Tape & Reel (TR)

2012

e3

-

Active

1 (Unlimited)

-

-

Matte Tin (Sn)

-

-

-

260

30

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

-

-

-

40V

-

-

-

-

-

-

-

-

-

DMN4036LK3-13 vs DMN4025LSD-13