DMN4020LFDE-13

Diodes Incorporated DMN4020LFDE-13

Part Number:
DMN4020LFDE-13
Manufacturer:
Diodes Incorporated
Ventron No:
3070662-DMN4020LFDE-13
Description:
MOSFET N-CH 40V 8A U-DFN2020-6
ECAD Model:
Datasheet:
DMN4020LFDE-13

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Specifications
Diodes Incorporated DMN4020LFDE-13 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMN4020LFDE-13.
  • Factory Lead Time
    22 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    6-UDFN Exposed Pad
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2012
  • JESD-609 Code
    e4
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • ECCN Code
    EAR99
  • Terminal Finish
    Nickel/Palladium/Gold (Ni/Pd/Au)
  • Technology
    MOSFET (Metal Oxide)
  • Power Dissipation-Max
    660mW Ta
  • Turn On Delay Time
    5.3 ns
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    20m Ω @ 8A, 10V
  • Vgs(th) (Max) @ Id
    2.4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1060pF @ 20V
  • Current - Continuous Drain (Id) @ 25°C
    8A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    19.1nC @ 20V
  • Rise Time
    7.1ns
  • Drain to Source Voltage (Vdss)
    40V
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    4.8 ns
  • Turn-Off Delay Time
    15.1 ns
  • Continuous Drain Current (ID)
    8A
  • Gate to Source Voltage (Vgs)
    20V
  • RoHS Status
    ROHS3 Compliant
Description
DMN4020LFDE-13 Overview
The maximum input capacitance of this device is 1060pF @ 20V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 8A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 15.1 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 5.3 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.The drain-to-source voltage (Vdss) of this transistor needs to be at 40V in order to operate.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.

DMN4020LFDE-13 Features
a continuous drain current (ID) of 8A
the turn-off delay time is 15.1 ns
a 40V drain to source voltage (Vdss)


DMN4020LFDE-13 Applications
There are a lot of Diodes Incorporated
DMN4020LFDE-13 applications of single MOSFETs transistors.


Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
DMN4020LFDE-13 More Descriptions
Compliant Surface Mount 4.8 ns Tape & Reel (TR) 7.1 ns 20 mΩ DFN 1.06 nF
Trans MOSFET N-CH 40V 9.5A 6-Pin DFN T/R
MOSFET N-CH 40V 8A U-DFN2020-6
Product Comparison
The three parts on the right have similar specifications to DMN4020LFDE-13.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    ECCN Code
    Terminal Finish
    Technology
    Power Dissipation-Max
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    RoHS Status
    Number of Pins
    Weight
    Transistor Element Material
    Pbfree Code
    Number of Terminations
    Additional Feature
    Subcategory
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Number of Elements
    Number of Channels
    Element Configuration
    Operating Mode
    Power Dissipation
    Transistor Application
    Drain Current-Max (Abs) (ID)
    Drain to Source Breakdown Voltage
    Radiation Hardening
    Manufacturer Package Identifier
    Terminal Position
    JESD-30 Code
    Configuration
    Case Connection
    JEDEC-95 Code
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Height
    Length
    Width
    View Compare
  • DMN4020LFDE-13
    DMN4020LFDE-13
    22 Weeks
    Surface Mount
    Surface Mount
    6-UDFN Exposed Pad
    -55°C~150°C TJ
    Tape & Reel (TR)
    2012
    e4
    Active
    1 (Unlimited)
    EAR99
    Nickel/Palladium/Gold (Ni/Pd/Au)
    MOSFET (Metal Oxide)
    660mW Ta
    5.3 ns
    N-Channel
    20m Ω @ 8A, 10V
    2.4V @ 250μA
    1060pF @ 20V
    8A Ta
    19.1nC @ 20V
    7.1ns
    40V
    4.5V 10V
    ±20V
    4.8 ns
    15.1 ns
    8A
    20V
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • DMN4027SSS-13
    -
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    -55°C~150°C TJ
    Tape & Reel (TR)
    2010
    e3
    Obsolete
    1 (Unlimited)
    EAR99
    Matte Tin (Sn)
    MOSFET (Metal Oxide)
    1.56W Ta
    3.1 ns
    N-Channel
    27m Ω @ 7A, 10V
    3V @ 250μA
    604pF @ 20V
    6A Ta
    12.9nC @ 10V
    3.1ns
    -
    4.5V 10V
    ±20V
    7.5 ns
    15.4 ns
    6A
    20V
    ROHS3 Compliant
    8
    73.992255mg
    SILICON
    yes
    8
    HIGH RELIABILITY
    FET General Purpose Powers
    GULL WING
    260
    40
    8
    1
    2
    Dual
    ENHANCEMENT MODE
    2.8W
    SWITCHING
    6A
    40V
    No
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • DMN4009LK3-13
    -
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -55°C~150°C TJ
    Digi-Reel®
    2012
    e3
    Obsolete
    1 (Unlimited)
    EAR99
    Matte Tin (Sn)
    MOSFET (Metal Oxide)
    2.19W Ta
    7.8 ns
    N-Channel
    8.5m Ω @ 14A, 10V
    3V @ 250μA
    2072pF @ 20V
    18A Ta
    21nC @ 4.5V
    18.5ns
    40V
    4.5V 10V
    ±20V
    14.9 ns
    37.3 ns
    27.6A
    20V
    ROHS3 Compliant
    3
    -
    SILICON
    no
    2
    -
    FET General Purpose Powers
    GULL WING
    260
    40
    4
    1
    -
    -
    ENHANCEMENT MODE
    -
    SWITCHING
    -
    -
    No
    DMN4009LK3-13
    SINGLE
    R-PSSO-G2
    SINGLE WITH BUILT-IN DIODE
    DRAIN
    TO-252AA
    0.0085Ohm
    96.6A
    40V
    2.39mm
    6.73mm
    6.22mm
  • DMN4025LSD-13
    22 Weeks
    -
    -
    SOIC
    -
    Tape & Reel (TR)
    2012
    e3
    Active
    1 (Unlimited)
    -
    Matte Tin (Sn)
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    40V
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    73.992255mg
    -
    -
    -
    -
    -
    -
    260
    30
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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