Diodes Incorporated DMN4020LFDE-13
- Part Number:
- DMN4020LFDE-13
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 3070662-DMN4020LFDE-13
- Description:
- MOSFET N-CH 40V 8A U-DFN2020-6
- Datasheet:
- DMN4020LFDE-13
Diodes Incorporated DMN4020LFDE-13 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMN4020LFDE-13.
- Factory Lead Time22 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case6-UDFN Exposed Pad
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2012
- JESD-609 Codee4
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- Terminal FinishNickel/Palladium/Gold (Ni/Pd/Au)
- TechnologyMOSFET (Metal Oxide)
- Power Dissipation-Max660mW Ta
- Turn On Delay Time5.3 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs20m Ω @ 8A, 10V
- Vgs(th) (Max) @ Id2.4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1060pF @ 20V
- Current - Continuous Drain (Id) @ 25°C8A Ta
- Gate Charge (Qg) (Max) @ Vgs19.1nC @ 20V
- Rise Time7.1ns
- Drain to Source Voltage (Vdss)40V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)4.8 ns
- Turn-Off Delay Time15.1 ns
- Continuous Drain Current (ID)8A
- Gate to Source Voltage (Vgs)20V
- RoHS StatusROHS3 Compliant
DMN4020LFDE-13 Overview
The maximum input capacitance of this device is 1060pF @ 20V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 8A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 15.1 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 5.3 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.The drain-to-source voltage (Vdss) of this transistor needs to be at 40V in order to operate.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.
DMN4020LFDE-13 Features
a continuous drain current (ID) of 8A
the turn-off delay time is 15.1 ns
a 40V drain to source voltage (Vdss)
DMN4020LFDE-13 Applications
There are a lot of Diodes Incorporated
DMN4020LFDE-13 applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
The maximum input capacitance of this device is 1060pF @ 20V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 8A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 15.1 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 5.3 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.The drain-to-source voltage (Vdss) of this transistor needs to be at 40V in order to operate.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.
DMN4020LFDE-13 Features
a continuous drain current (ID) of 8A
the turn-off delay time is 15.1 ns
a 40V drain to source voltage (Vdss)
DMN4020LFDE-13 Applications
There are a lot of Diodes Incorporated
DMN4020LFDE-13 applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
DMN4020LFDE-13 More Descriptions
Compliant Surface Mount 4.8 ns Tape & Reel (TR) 7.1 ns 20 mΩ DFN 1.06 nF
Trans MOSFET N-CH 40V 9.5A 6-Pin DFN T/R
MOSFET N-CH 40V 8A U-DFN2020-6
Trans MOSFET N-CH 40V 9.5A 6-Pin DFN T/R
MOSFET N-CH 40V 8A U-DFN2020-6
The three parts on the right have similar specifications to DMN4020LFDE-13.
-
ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseOperating TemperaturePackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)ECCN CodeTerminal FinishTechnologyPower Dissipation-MaxTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)RoHS StatusNumber of PinsWeightTransistor Element MaterialPbfree CodeNumber of TerminationsAdditional FeatureSubcategoryTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountNumber of ElementsNumber of ChannelsElement ConfigurationOperating ModePower DissipationTransistor ApplicationDrain Current-Max (Abs) (ID)Drain to Source Breakdown VoltageRadiation HardeningManufacturer Package IdentifierTerminal PositionJESD-30 CodeConfigurationCase ConnectionJEDEC-95 CodeDrain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinHeightLengthWidthView Compare
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DMN4020LFDE-1322 WeeksSurface MountSurface Mount6-UDFN Exposed Pad-55°C~150°C TJTape & Reel (TR)2012e4Active1 (Unlimited)EAR99Nickel/Palladium/Gold (Ni/Pd/Au)MOSFET (Metal Oxide)660mW Ta5.3 nsN-Channel20m Ω @ 8A, 10V2.4V @ 250μA1060pF @ 20V8A Ta19.1nC @ 20V7.1ns40V4.5V 10V±20V4.8 ns15.1 ns8A20VROHS3 Compliant---------------------------------
-
-Surface MountSurface Mount8-SOIC (0.154, 3.90mm Width)-55°C~150°C TJTape & Reel (TR)2010e3Obsolete1 (Unlimited)EAR99Matte Tin (Sn)MOSFET (Metal Oxide)1.56W Ta3.1 nsN-Channel27m Ω @ 7A, 10V3V @ 250μA604pF @ 20V6A Ta12.9nC @ 10V3.1ns-4.5V 10V±20V7.5 ns15.4 ns6A20VROHS3 Compliant873.992255mgSILICONyes8HIGH RELIABILITYFET General Purpose PowersGULL WING26040812DualENHANCEMENT MODE2.8WSWITCHING6A40VNo------------
-
-Surface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-63-55°C~150°C TJDigi-Reel®2012e3Obsolete1 (Unlimited)EAR99Matte Tin (Sn)MOSFET (Metal Oxide)2.19W Ta7.8 nsN-Channel8.5m Ω @ 14A, 10V3V @ 250μA2072pF @ 20V18A Ta21nC @ 4.5V18.5ns40V4.5V 10V±20V14.9 ns37.3 ns27.6A20VROHS3 Compliant3-SILICONno2-FET General Purpose PowersGULL WING2604041--ENHANCEMENT MODE-SWITCHING--NoDMN4009LK3-13SINGLER-PSSO-G2SINGLE WITH BUILT-IN DIODEDRAINTO-252AA0.0085Ohm96.6A40V2.39mm6.73mm6.22mm
-
22 Weeks--SOIC-Tape & Reel (TR)2012e3Active1 (Unlimited)-Matte Tin (Sn)----------40V------ROHS3 Compliant-73.992255mg------26030----------------------
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